JP5383974B2 - 半導体基板および半導体装置 - Google Patents
半導体基板および半導体装置 Download PDFInfo
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- JP5383974B2 JP5383974B2 JP2006351436A JP2006351436A JP5383974B2 JP 5383974 B2 JP5383974 B2 JP 5383974B2 JP 2006351436 A JP2006351436 A JP 2006351436A JP 2006351436 A JP2006351436 A JP 2006351436A JP 5383974 B2 JP5383974 B2 JP 5383974B2
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- 239000000758 substrate Substances 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 141
- 229910002704 AlGaN Inorganic materials 0.000 claims description 45
- 239000002356 single layer Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 229910002601 GaN Inorganic materials 0.000 description 35
- 238000000034 method Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
12 AlN層
14 AlGaN層
16 GaN層
18 電子供給層
Claims (6)
- Si基板上に接して設けられたAlN層と、
前記AlN層上に接して設けられたAlの組成比が0.3以上かつ0.6以下のAl組成一定からなる単層のAlGaN層と、
前記AlGaN層上に接して設けられたGaN層と、を具備することを特徴とする半導体基板。 - 前記AlN層は1000℃以上で形成されてなることを特徴とする請求項1記載の半導体基板。
- Si基板上に接して設けられたAlN層と、
前記AlN層上に接して設けられたAlの組成比が0.3以上かつ0.6以下のAl組成一定からなる単層のAlGaN層と、
前記AlGaN層上に接して設けられたGaN層と、
前記GaN層上に設けられた動作層と、を具備することを特徴とする半導体装置。 - 前記AlN層は1000℃以上で形成されてなることを特徴とする請求項3記載の半導体装置。
- 前記AlN層、前記AlGaN層および前記GaN層は、MOCVD法で成長されてなることを特徴とする請求項3記載の半導体装置。
- 前記半導体装置は、HEMT、LD、LEDおよびVCSELのいずれかであることを特徴とする請求項3記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006351436A JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
US11/965,302 US8232557B2 (en) | 2006-12-27 | 2007-12-27 | Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same |
Applications Claiming Priority (1)
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---|---|---|---|
JP2006351436A JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2008166349A JP2008166349A (ja) | 2008-07-17 |
JP2008166349A5 JP2008166349A5 (ja) | 2010-02-18 |
JP5383974B2 true JP5383974B2 (ja) | 2014-01-08 |
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JP2006351436A Active JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US8232557B2 (ja) |
JP (1) | JP5383974B2 (ja) |
Families Citing this family (31)
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JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
JP5634681B2 (ja) * | 2009-03-26 | 2014-12-03 | 住友電工デバイス・イノベーション株式会社 | 半導体素子 |
GB2469451A (en) | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | P-Type Semiconductor Devices |
GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
WO2011084269A2 (en) * | 2009-12-16 | 2011-07-14 | National Semiconductor Corporation | Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates |
US8802516B2 (en) * | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
JP5614130B2 (ja) | 2010-06-30 | 2014-10-29 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2012015303A (ja) | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体基板および半導体装置 |
JP5668339B2 (ja) | 2010-06-30 | 2015-02-12 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2012015304A (ja) | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2012033575A (ja) | 2010-07-28 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP5707767B2 (ja) | 2010-07-29 | 2015-04-30 | 住友電気工業株式会社 | 半導体装置 |
JP2012033708A (ja) | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
US20130175671A1 (en) * | 2010-09-30 | 2013-07-11 | Freescale Semiconductor, Inc. | Methods for processing a semiconductor wafer, a semiconductor wafer and a semiconductor device |
JP5660373B2 (ja) * | 2010-10-29 | 2015-01-28 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子 |
JP5781292B2 (ja) | 2010-11-16 | 2015-09-16 | ローム株式会社 | 窒化物半導体素子および窒化物半導体パッケージ |
JP5482682B2 (ja) * | 2011-02-08 | 2014-05-07 | 住友電気工業株式会社 | Iii族窒化物半導体電子デバイス、エピタキシャル基板、及びiii族窒化物半導体電子デバイスを作製する方法 |
JP5127978B1 (ja) | 2011-09-08 | 2013-01-23 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法 |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
JP5228122B1 (ja) | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
SG10201705301QA (en) * | 2012-12-26 | 2017-07-28 | Agency Science Tech & Res | A semiconductor device for high-power applications |
JP2014220407A (ja) * | 2013-05-09 | 2014-11-20 | ローム株式会社 | 窒化物半導体素子 |
US20140335666A1 (en) | 2013-05-13 | 2014-11-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics |
JP6480244B2 (ja) * | 2015-04-10 | 2019-03-06 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
CN107771352B (zh) * | 2015-06-26 | 2022-05-10 | 英特尔公司 | 设计的硅衬底上的gan器件 |
JP6039026B1 (ja) * | 2015-09-04 | 2016-12-07 | Dowaエレクトロニクス株式会社 | n型オーミック電極の製造方法、ならびにn型オーミック電極、n型電極およびIII族窒化物半導体発光素子 |
JP2018107156A (ja) * | 2016-12-22 | 2018-07-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
JP6729416B2 (ja) * | 2017-01-19 | 2020-07-22 | 住友電気工業株式会社 | 窒化物半導体デバイス及び窒化物半導体デバイスの製造方法 |
TWI631668B (zh) | 2017-11-22 | 2018-08-01 | 聯鈞光電股份有限公司 | 氮化物半導體結構 |
JP2020177965A (ja) * | 2019-04-16 | 2020-10-29 | 日機装株式会社 | 窒化物半導体発光素子 |
Family Cites Families (8)
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JPH10242586A (ja) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Iii 族窒化物半導体装置およびその製造方法 |
JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
JP4145108B2 (ja) * | 2002-09-20 | 2008-09-03 | シャープ株式会社 | GaNP結晶の成長方法 |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
US7247889B2 (en) * | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
JP2006286741A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置およびその製造方法並びにその半導体装置製造用基板 |
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2006
- 2006-12-27 JP JP2006351436A patent/JP5383974B2/ja active Active
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Also Published As
Publication number | Publication date |
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JP2008166349A (ja) | 2008-07-17 |
US8232557B2 (en) | 2012-07-31 |
US20080210949A1 (en) | 2008-09-04 |
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