JP2012015303A - 半導体基板および半導体装置 - Google Patents
半導体基板および半導体装置 Download PDFInfo
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- JP2012015303A JP2012015303A JP2010150058A JP2010150058A JP2012015303A JP 2012015303 A JP2012015303 A JP 2012015303A JP 2010150058 A JP2010150058 A JP 2010150058A JP 2010150058 A JP2010150058 A JP 2010150058A JP 2012015303 A JP2012015303 A JP 2012015303A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 5
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 37
- 229910002601 GaN Inorganic materials 0.000 description 36
- 229910002704 AlGaN Inorganic materials 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】Si基板10上に接して形成されたX線回折による(002)面のロッキングカーブ半値幅が1500秒以下のAlN層12と、AlN層12上に形成されたGaN系半導体層14と、を具備する半導体基板であって、その反りの曲率半径は±25m以上であり、反り量は、半導体基板の大きさを4インチとした場合、±50μm以下である。GaN系半導体層14はAlN層12から圧縮応力を受ける。
【選択図】図1
Description
Al原料先流し条件
先流しガス:TMA(トリメチルアルミニウム)
先流し総量:20μmol
熱処理温度:1050℃
ガス圧力: 100torr
AlN層12形成条件
原料ガス:TMA、NH3(アンモニア)
成長温度:1150℃
ガス圧力:100torr
成長膜厚:300nm
AlGaN層14形成条件
原料ガス:NH3、TMA、TMG(トリメチルガリウム)
成長温度:1100℃
ガス圧力:100torr
ドープ: アンドープ
Al組成比:0.5
膜厚: 100nm
A<0.0077x+0.3189
となる。
AlN層 12
AlGaN層 14
GaN層 16
AlGaN層 18
GaN層 20
Claims (13)
- Si基板上に接して形成されたX線回折による(002)面のロッキングカーブ半値幅が1500秒以下のAlN層と、
前記AlN層上に形成されたGaN系半導体層と、
を具備することを特徴とする半導体基板。 - 前記半導体基板の反りの曲率半径は±25m以上であることを特徴とする請求項1記載の半導体基板。
- 前記半導体基板の反り量は、半導体基板の大きさを4インチとした場合、±50μm以下であることを特徴とする請求項1記載の半導体基板。
- 前記GaN系半導体層は前記AlN層から圧縮応力を受けることを特徴とする請求項1から3いずれか一項記載の半導体基板。
- 前記GaN系半導体層はAlxGa1−xN層および前記AlxGa1−xN層上に形成されたGaN層を含み構成され、前記AlxGa1−xN層のa軸長は、a軸長をA nmとしたとき、
A<0.0077x+0.3189
であることを特徴とする請求項1から3いずれか一項記載の半導体基板。 - 前記AlN層の膜厚は100nm以上であることを特徴とする請求項1から5のいずれか一項記載の半導体基板。
- 前記GaN系半導体層はAlxGa1−xN層であり、xは0.3以上0.6以下であることを特徴とする請求項1から6のいずれか一項記載の半導体基板。
- Si基板上に接して形成されたX線回折による(002)面のロッキングカーブ半値幅が1500秒以下のAlN層と、
前記AlN層上に形成されたGaN系半導体層と、
を具備することを特徴とする半導体装置。 - 前記Si基板の反りの曲率半径は±25m以上であることを特徴とする請求項8記載の半導体装置。
- 前記GaN系半導体層は前記AlN層から圧縮応力を受けることを特徴とする請求項8または9記載の半導体装置。
- 前記GaN系半導体層はAlxGa1−xN層および前記AlxGa1−xN層上に形成されたGaN層を含み構成され、前記AlxGa1−xN層のa軸長は、a軸長をA nmとしたとき、
A<0.0077x+0.3189
であることを特徴とする請求項8または9のいずれか一項記載の半導体装置。 - 前記AlN層の膜厚は100nm以上であることを特徴とする請求項8から11のいずれか一項記載の半導体装置。
- 前記GaN系半導体層はAlxGa1−xN層であり、xは0.3以上0.6以下であることを特徴とする請求項8から12のいずれか一項記載の半導体装置。
Priority Applications (2)
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JP2010150058A JP2012015303A (ja) | 2010-06-30 | 2010-06-30 | 半導体基板および半導体装置 |
US13/172,426 US8546813B2 (en) | 2010-06-30 | 2011-06-29 | Semiconductor substrate and semiconductor device |
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JP2010150058A JP2012015303A (ja) | 2010-06-30 | 2010-06-30 | 半導体基板および半導体装置 |
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JP2016007363A Division JP2016154221A (ja) | 2016-01-18 | 2016-01-18 | 半導体基板および半導体装置 |
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JP2012015303A true JP2012015303A (ja) | 2012-01-19 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015096453A (ja) * | 2013-11-15 | 2015-05-21 | 古河機械金属株式会社 | Iii族窒化物半導体自立基板の製造方法 |
JP2015098413A (ja) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
WO2015115126A1 (ja) * | 2014-01-31 | 2015-08-06 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JP2016204201A (ja) * | 2015-04-22 | 2016-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハおよびその製造方法 |
JP2019004178A (ja) * | 2018-09-20 | 2019-01-10 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9064706B2 (en) * | 2006-11-17 | 2015-06-23 | Sumitomo Electric Industries, Ltd. | Composite of III-nitride crystal on laterally stacked substrates |
JP2012015304A (ja) * | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP5781292B2 (ja) * | 2010-11-16 | 2015-09-16 | ローム株式会社 | 窒化物半導体素子および窒化物半導体パッケージ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045899A (ja) * | 2000-12-07 | 2003-02-14 | Ngk Insulators Ltd | 半導体素子 |
JP2006093400A (ja) * | 2004-09-24 | 2006-04-06 | Ngk Insulators Ltd | 半導体積層構造およびhemt素子 |
JP2009054888A (ja) * | 2007-08-28 | 2009-03-12 | Tohoku Techno Arch Co Ltd | Iii族窒化物半導体とその製造方法 |
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WO2002064864A1 (fr) * | 2001-02-14 | 2002-08-22 | Toyoda Gosei Co., Ltd. | Procede de production de cristal semi-conducteur et element lumineux semi-conducteur |
JP5383974B2 (ja) | 2006-12-27 | 2014-01-08 | 住友電工デバイス・イノベーション株式会社 | 半導体基板および半導体装置 |
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- 2010-06-30 JP JP2010150058A patent/JP2012015303A/ja active Pending
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2011
- 2011-06-29 US US13/172,426 patent/US8546813B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003045899A (ja) * | 2000-12-07 | 2003-02-14 | Ngk Insulators Ltd | 半導体素子 |
JP2006093400A (ja) * | 2004-09-24 | 2006-04-06 | Ngk Insulators Ltd | 半導体積層構造およびhemt素子 |
JP2009054888A (ja) * | 2007-08-28 | 2009-03-12 | Tohoku Techno Arch Co Ltd | Iii族窒化物半導体とその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015096453A (ja) * | 2013-11-15 | 2015-05-21 | 古河機械金属株式会社 | Iii族窒化物半導体自立基板の製造方法 |
JP2015098413A (ja) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
WO2015115126A1 (ja) * | 2014-01-31 | 2015-08-06 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JP6089122B2 (ja) * | 2014-01-31 | 2017-03-01 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JPWO2015115126A1 (ja) * | 2014-01-31 | 2017-03-23 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JP2016204201A (ja) * | 2015-04-22 | 2016-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハおよびその製造方法 |
JP2019004178A (ja) * | 2018-09-20 | 2019-01-10 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子 |
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US20120001195A1 (en) | 2012-01-05 |
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