AU2001274810A1 - Defect reduction in gan and related materials - Google Patents
Defect reduction in gan and related materialsInfo
- Publication number
- AU2001274810A1 AU2001274810A1 AU2001274810A AU7481001A AU2001274810A1 AU 2001274810 A1 AU2001274810 A1 AU 2001274810A1 AU 2001274810 A AU2001274810 A AU 2001274810A AU 7481001 A AU7481001 A AU 7481001A AU 2001274810 A1 AU2001274810 A1 AU 2001274810A1
- Authority
- AU
- Australia
- Prior art keywords
- gan
- related materials
- defect reduction
- defect
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19768100P | 2000-04-17 | 2000-04-17 | |
US60197681 | 2000-04-17 | ||
PCT/US2001/012329 WO2001080311A1 (en) | 2000-04-17 | 2001-04-16 | Defect reduction in gan and related materials |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001274810A1 true AU2001274810A1 (en) | 2001-10-30 |
Family
ID=22730332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001274810A Abandoned AU2001274810A1 (en) | 2000-04-17 | 2001-04-16 | Defect reduction in gan and related materials |
Country Status (3)
Country | Link |
---|---|
US (1) | US6657232B2 (en) |
AU (1) | AU2001274810A1 (en) |
WO (1) | WO2001080311A1 (en) |
Families Citing this family (66)
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US6495867B1 (en) * | 2000-07-26 | 2002-12-17 | Axt, Inc. | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
FR2815026B1 (en) * | 2000-10-06 | 2004-04-09 | Commissariat Energie Atomique | METHOD FOR SELF-ORGANIZING MICROSTRUCTURES OR NANOSTRUCTURES AND MICROSTRUCTURE OR NANOSTRUCTURE DEVICE |
NO20014399L (en) * | 2000-11-29 | 2002-05-30 | Hewlett Packard Co | A data structure and storage and retrieval method that supports ordinal number based data retrieval and retrieval |
FR2820517B1 (en) * | 2001-02-02 | 2003-05-16 | Cit Alcatel | SATURABLE OPTICAL ABSORBENT AND APPLICATION TO THE REGENERATION OF A MULTIPLEX SIGNAL IN WAVELENGTH |
JP3819730B2 (en) * | 2001-05-11 | 2006-09-13 | 三洋電機株式会社 | Nitride-based semiconductor device and method for forming nitride semiconductor |
JP3866540B2 (en) * | 2001-07-06 | 2007-01-10 | 株式会社東芝 | Nitride semiconductor device and manufacturing method thereof |
KR100679377B1 (en) * | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | Lighting Emitting Device Structure Using Nitride Bulk Single Crystal layer |
US7291117B2 (en) * | 2002-04-19 | 2007-11-06 | Pelikan Technologies, Inc. | Method and apparatus for penetrating tissue |
US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
KR100507610B1 (en) * | 2002-11-15 | 2005-08-10 | 광주과학기술원 | Nitride semiconductor nanophase opto-electronic cell and the preparation method thereof |
WO2004053210A1 (en) * | 2002-12-11 | 2004-06-24 | Ammono Sp. Z O.O. | A substrate for epitaxy and a method of preparing the same |
WO2004105108A2 (en) * | 2003-05-21 | 2004-12-02 | Lumilog | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
JP4526252B2 (en) * | 2003-08-26 | 2010-08-18 | 富士通株式会社 | Optical semiconductor device and manufacturing method thereof |
JP2007534146A (en) * | 2003-09-05 | 2007-11-22 | ザ・ユニバーシティ・オブ・ノース・カロライナ・アット・シャーロット | Quantum dot optoelectronic device epitaxially grown in nanoscale and method for manufacturing the same |
EP1702354A2 (en) * | 2003-12-16 | 2006-09-20 | Stmicroelectronics SA | Single-crystal semiconductor layer with heteroaromatic macro-network |
US7154163B2 (en) * | 2004-05-05 | 2006-12-26 | Supernova Optoelectronics Corp. | Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers |
US7445673B2 (en) | 2004-05-18 | 2008-11-04 | Lumilog | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
PL1769105T3 (en) * | 2004-06-11 | 2014-11-28 | Ammono S A | Bulk mono-crystalline gallium nitride and method for its preparation |
US7339205B2 (en) | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
PL371405A1 (en) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
FI20045482A0 (en) | 2004-12-14 | 2004-12-14 | Optogan Oy | A semiconductor substrate having a lower dislocation density, and a process for its preparation |
KR100712753B1 (en) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | Compound semiconductor device and method for manufacturing the same |
US20060249741A1 (en) * | 2005-04-25 | 2006-11-09 | Cao Group, Inc. | GaN semiconductor devices with A1N buffer grown at high temperature and method for making the same |
US20060270201A1 (en) * | 2005-05-13 | 2006-11-30 | Chua Soo J | Nano-air-bridged lateral overgrowth of GaN semiconductor layer |
US20080206589A1 (en) * | 2007-02-28 | 2008-08-28 | Bruce Gardiner Aitken | Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device |
US7722929B2 (en) * | 2005-08-18 | 2010-05-25 | Corning Incorporated | Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device |
US20070040501A1 (en) | 2005-08-18 | 2007-02-22 | Aitken Bruce G | Method for inhibiting oxygen and moisture degradation of a device and the resulting device |
US7829147B2 (en) * | 2005-08-18 | 2010-11-09 | Corning Incorporated | Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device |
US8946674B2 (en) * | 2005-08-31 | 2015-02-03 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
CN101467231B (en) | 2006-04-25 | 2012-07-18 | 新加坡国立大学 | Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template |
US20080048178A1 (en) * | 2006-08-24 | 2008-02-28 | Bruce Gardiner Aitken | Tin phosphate barrier film, method, and apparatus |
EP1898449B1 (en) * | 2006-09-06 | 2011-06-08 | Siltron Inc. | Compound semiconductor devices and methods of manufacturing the same |
US8483820B2 (en) * | 2006-10-05 | 2013-07-09 | Bioness Inc. | System and method for percutaneous delivery of electrical stimulation to a target body tissue |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
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US7925452B2 (en) * | 2007-06-15 | 2011-04-12 | The Boeing Company | Method and apparatus for nondestructive corrosion detection using quantum dots |
US8652947B2 (en) | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
KR100921789B1 (en) * | 2007-10-24 | 2009-10-15 | 주식회사 실트론 | Method for preparing compound semiconductor substrate |
GB2460898B (en) | 2008-06-19 | 2012-10-10 | Wang Nang Wang | Production of semiconductor material and devices using oblique angle etched templates |
US8008181B2 (en) * | 2008-08-22 | 2011-08-30 | The Regents Of The University Of California | Propagation of misfit dislocations from buffer/Si interface into Si |
US7902524B2 (en) * | 2009-02-23 | 2011-03-08 | The Boeing Company | Portable corrosion detection apparatus |
US8185326B2 (en) * | 2009-02-23 | 2012-05-22 | The Boeing Company | Corrosion detection and monitoring system |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9064947B2 (en) | 2009-08-04 | 2015-06-23 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
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US20110086444A1 (en) * | 2009-10-14 | 2011-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for producing substrates free of patterns using an alpha stepper to ensure results |
CN102893392B (en) | 2010-04-13 | 2015-08-05 | Gan系统公司 | Adopt the high-density gallium nitride device of island topology |
US8503610B1 (en) | 2010-11-23 | 2013-08-06 | The Boeing Company | X-ray inspection tool |
US8396187B2 (en) | 2010-12-10 | 2013-03-12 | The Boeing Company | X-ray inspection tool |
CN103748662B (en) | 2011-06-28 | 2016-11-09 | 圣戈班晶体及检测公司 | Semiconductor substrate and forming method |
US8588262B1 (en) | 2011-09-07 | 2013-11-19 | The Boeing Company | Quantum dot detection |
US8455881B2 (en) * | 2011-09-19 | 2013-06-04 | Translucent, Inc. | Ge quantum dots for dislocation engineering of III-N on silicon |
JP5175967B1 (en) * | 2011-10-11 | 2013-04-03 | 株式会社東芝 | Semiconductor light emitting device and semiconductor wafer |
JP5724819B2 (en) * | 2011-10-17 | 2015-05-27 | 日立金属株式会社 | Nitride semiconductor growth substrate and manufacturing method thereof, nitride semiconductor epitaxial substrate, and nitride semiconductor device |
TWI466343B (en) * | 2012-01-06 | 2014-12-21 | Phostek Inc | Light-emitting diode device |
US8860005B1 (en) * | 2013-08-08 | 2014-10-14 | International Business Machines Corporation | Thin light emitting diode and fabrication method |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
JP6248359B2 (en) * | 2013-12-20 | 2017-12-20 | 住友電工デバイス・イノベーション株式会社 | Semiconductor layer surface treatment method |
KR102192086B1 (en) | 2014-03-14 | 2020-12-16 | 삼성전자주식회사 | Device having nitride quantum dot and method of manufacturing the same |
US9865769B2 (en) | 2015-03-23 | 2018-01-09 | International Business Machines Corporation | Back contact LED through spalling |
CN107429383B (en) * | 2015-03-30 | 2020-07-24 | 东曹株式会社 | Gallium nitride sintered body and method for producing same |
JP7054511B2 (en) * | 2018-01-11 | 2022-04-14 | 国立大学法人 和歌山大学 | 3D quantum structure evaluation method, 3D quantum structure evaluation device, and computer program |
CN114864762B (en) * | 2022-07-11 | 2022-09-27 | 江西兆驰半导体有限公司 | Low-defect-density silicon-based gallium nitride semiconductor epitaxial wafer and manufacturing method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW295672B (en) * | 1994-09-20 | 1997-01-11 | Hitachi Ltd | |
US5917332A (en) * | 1996-05-09 | 1999-06-29 | Advanced Micro Devices, Inc. | Arrangement for improving defect scanner sensitivity and scanning defects on die of a semiconductor wafer |
JP3987898B2 (en) * | 1996-09-03 | 2007-10-10 | 独立行政法人理化学研究所 | Quantum dot forming method and quantum dot structure |
JP4138930B2 (en) * | 1998-03-17 | 2008-08-27 | 富士通株式会社 | Quantum semiconductor device and quantum semiconductor light emitting device |
JP3660801B2 (en) * | 1998-06-04 | 2005-06-15 | 三菱電線工業株式会社 | GaN-based semiconductor light emitting device |
US6255025B1 (en) * | 1998-07-13 | 2001-07-03 | Fuji Xerox Co., Ltd. | Filter and process for producing same |
US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
US6380108B1 (en) * | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
-
2001
- 2001-04-16 AU AU2001274810A patent/AU2001274810A1/en not_active Abandoned
- 2001-04-16 WO PCT/US2001/012329 patent/WO2001080311A1/en active Application Filing
- 2001-04-16 US US09/834,763 patent/US6657232B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2001080311A1 (en) | 2001-10-25 |
US6657232B2 (en) | 2003-12-02 |
US20020013042A1 (en) | 2002-01-31 |
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