JP5075786B2 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP5075786B2 JP5075786B2 JP2008259481A JP2008259481A JP5075786B2 JP 5075786 B2 JP5075786 B2 JP 5075786B2 JP 2008259481 A JP2008259481 A JP 2008259481A JP 2008259481 A JP2008259481 A JP 2008259481A JP 5075786 B2 JP5075786 B2 JP 5075786B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
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- 239000013078 crystal Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 120
- 238000000605 extraction Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
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- 230000007423 decrease Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 Si x N y Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Description
しかしながら、この技術開示例では、凹部を発光層よりも深い位置までエッチングする必要があり製造プロセスが複雑となり、且つ発光層端面近傍を露出することにより結晶表面が劣化し十分な信頼性を得ることが困難である。
図1は、本発明の第1の実施形態にかかる発光装置の模式図である。すなわち、図1(a)は平面図、図1(b)はA−A線に沿った断面図である。
発光装置は、第1の基板10と、下地層24と、下地層24の一方の主面と第1の基板10とを接着する接着金属層27と、下地層24の他方の主面上に設けられ窓部30aを有するマスク層30と、窓部30aに露出した下地層24の上に結晶成長され発光層34を有する積層体37と、を備えている。
この場合、マスク層30にはフォトリソグラフィ法を用いて窓部30aが形成される。
p型GaP基板110上に、p型クラッド層114、発光層116、n型クラッド層118、及び電流拡散層120、がこの順序で形成されている。
窓部30aを上方から見た平面形状は円形に限定されず、矩形、楕円、多角形などであってもよい。本変形例では、細長い矩形状の窓部30aが、チップ中心部に設けられた円形状の窓部30aから略90度の角度をなすように放射状に広がっている。このようにすると、矩形状の窓部30a上の積層体37が円形状の窓部30a上の発光層34からの放出光を遮ることを抑制可能である。また、矩形状の窓部30a上の発光層34からの放出光が、円形状の窓部30a上に形成された積層体37により遮られることを抑制可能である。このために、光取り出し効率を高めることが容易となる。
本実施形態において、窓部30a上に、積層体37が形成されるが、マスク層30の窓部非形成領域上にも横方向成長によるディポジッション状の成長膜が窓部30a側から次第に堆積する。この横方向成長膜は、エピタキシャル膜ではなく、例えば成長温度を低くするか、または原料ガスのV/III比を低くするなどにより堆積が促進される。他方、窓部30a上には発光層34を含みエピタキシャル膜からなる積層体37が成長される。
Claims (5)
- 導電性を有する第1の基板と、
下地層と、
前記下地層の一方の主面と前記第1の基板とを接着する接着金属層と、
前記下地層の他方の主面上に設けられ、窓部を有し且つ絶縁体からなるマスク層と、
前記窓部に露出した前記下地層の上に選択的に設けられ、発光層を有する積層体と、
を備えたことを特徴とする発光装置。 - 前記発光層は、Inx(GayAl1−y)1−xP(0≦x≦1、0≦y≦1)及びGaxIn1−xNyAs1−y(0≦x≦1、0≦y≦1)のいずれかを含むことを特徴とする請求項1記載の発光装置。
- 前記積層体は、前記窓部を除く前記マスク層上に設けられないことを特徴とする請求項1または2に記載の発光装置。
- 前記第1の基板は、シリコンからなり、
前記接着金属層は、Ti、Pt、Hf、W、V、及びMoよりなる群から選択されたいずれか含むことを特徴とする請求項1〜3のいずれか1つに記載の発光装置。 - 請求項1〜4のいずれか1つに記載の発光装置の製造方法であって、
前記第1の基板に第1の金属層を形成する工程と、
第2の基板の上に、半導体からなる前記下地層を形成する工程と、
前記下地層の前記一方の主面上に第2の金属層を形成する工程と、
前記第1の金属層と前記第2の金属層とを接着して前記接着金属層を形成したのち前記第2の基板を除去し、前記下地層の前記他方の主面を露出させる工程と、
前記他方の主面に前記窓部を有する前記マスク層を形成する工程と、
前記窓部に露出した前記下地層の上に前記積層体を結晶成長する工程と、
を備えたことを特徴とする発光装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008259481A JP5075786B2 (ja) | 2008-10-06 | 2008-10-06 | 発光装置及びその製造方法 |
US12/485,106 US20100084669A1 (en) | 2008-10-06 | 2009-06-16 | Light emitting device and method for manufacturing same |
US14/189,873 US20140175475A1 (en) | 2008-10-06 | 2014-02-25 | Light emitting device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008259481A JP5075786B2 (ja) | 2008-10-06 | 2008-10-06 | 発光装置及びその製造方法 |
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JP2010092965A JP2010092965A (ja) | 2010-04-22 |
JP5075786B2 true JP5075786B2 (ja) | 2012-11-21 |
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JP2008259481A Expired - Fee Related JP5075786B2 (ja) | 2008-10-06 | 2008-10-06 | 発光装置及びその製造方法 |
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US (2) | US20100084669A1 (ja) |
JP (1) | JP5075786B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010219320A (ja) | 2009-03-17 | 2010-09-30 | Toshiba Corp | 発光素子の製造方法及び発光素子 |
TW201106499A (en) * | 2009-08-03 | 2011-02-16 | Forward Electronics Co Ltd | High-efficiency light emitting diode |
TWI563686B (en) * | 2012-12-21 | 2016-12-21 | Hon Hai Prec Ind Co Ltd | Led chip and method manufacturing the same |
JP7266961B2 (ja) * | 2015-12-31 | 2023-05-01 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
US10193301B2 (en) * | 2017-03-31 | 2019-01-29 | Nichia Corporation | Method of manufacturing light emitting device and light emitting device |
CN112117353A (zh) * | 2020-10-09 | 2020-12-22 | 湘能华磊光电股份有限公司 | 一种led芯片及其制作方法 |
JP7367743B2 (ja) | 2021-10-18 | 2023-10-24 | 信越半導体株式会社 | 接合型半導体ウェーハの製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07273367A (ja) * | 1994-04-01 | 1995-10-20 | Mitsubishi Cable Ind Ltd | 半導体基板の製造方法および発光素子の製造方法 |
US7180100B2 (en) * | 2001-03-27 | 2007-02-20 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
US7163876B2 (en) * | 2001-03-29 | 2007-01-16 | Toyoda Gosei Co., Ltd | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device |
JP4261849B2 (ja) * | 2002-09-06 | 2009-04-30 | キヤノン株式会社 | 近接場光を用いた露光方法及び、近接場光を用いる露光装置 |
JP4074505B2 (ja) * | 2002-10-25 | 2008-04-09 | ローム株式会社 | 半導体発光素子の製法 |
JP4371714B2 (ja) * | 2003-06-16 | 2009-11-25 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2006128602A (ja) * | 2004-03-30 | 2006-05-18 | Sanyo Electric Co Ltd | 半導体レーザ装置およびその製造方法 |
JP4571476B2 (ja) * | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
JP5196288B2 (ja) * | 2005-04-27 | 2013-05-15 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
KR20080027355A (ko) * | 2005-06-30 | 2008-03-26 | 마츠시다 덴코 가부시키가이샤 | 발광 장치 |
CN101326646B (zh) * | 2005-11-01 | 2011-03-16 | 麻省理工学院 | 单片集成的半导体材料和器件 |
JP2007134388A (ja) * | 2005-11-08 | 2007-05-31 | Sharp Corp | 窒化物系半導体素子とその製造方法 |
US20070181905A1 (en) * | 2006-02-07 | 2007-08-09 | Hui-Heng Wang | Light emitting diode having enhanced side emitting capability |
JP4852755B2 (ja) * | 2006-09-20 | 2012-01-11 | 国立大学法人東北大学 | 化合物半導体素子の製造方法 |
JP2008130799A (ja) * | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
JP2008198650A (ja) * | 2007-02-08 | 2008-08-28 | Toshiba Discrete Technology Kk | 半導体発光素子及び半導体発光装置 |
JP5150367B2 (ja) * | 2008-05-27 | 2013-02-20 | 東芝ディスクリートテクノロジー株式会社 | 発光装置及びその製造方法 |
-
2008
- 2008-10-06 JP JP2008259481A patent/JP5075786B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-16 US US12/485,106 patent/US20100084669A1/en not_active Abandoned
-
2014
- 2014-02-25 US US14/189,873 patent/US20140175475A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20100084669A1 (en) | 2010-04-08 |
JP2010092965A (ja) | 2010-04-22 |
US20140175475A1 (en) | 2014-06-26 |
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