JP7266961B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP7266961B2 JP7266961B2 JP2016256568A JP2016256568A JP7266961B2 JP 7266961 B2 JP7266961 B2 JP 7266961B2 JP 2016256568 A JP2016256568 A JP 2016256568A JP 2016256568 A JP2016256568 A JP 2016256568A JP 7266961 B2 JP7266961 B2 JP 7266961B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting device
- reflective layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
発光装置の高さが固定値である時に、斜面172A1の傾斜角度(θ)が小さいほど、発光装置の厚み(Y方向)が大きい。発光装置のサイズが大きくなるため、幾つかの分野に応用されにくくなる可能性がある。よって、斜面172A1の傾斜角度を設計する時に、その応用を考慮する必要があり、つまり、任意の角度でも良いとは言えない。
表2から分かるように、D3がD4よりも小さいとき、ΔDの絶対値が大きいほど、発光装置1100の発光角度が大きい。発光装置1100の発光角度は、透光体12を覆わない発光構造11の発光角度に接近することができる。第19図との相違点は、第22B及び第22C図では、斜面172Cの上方が透光体12により覆われ、且つ、第19図における平面172A2を含む部分を有しないことにある。第22B図に示すように、斜面172Cを含む部分が、発光構造11よりも大きい高さを有する時に、発光装置1000が発する光は、斜面172Cを経由して透光体12の上方へ反射されて、発光装置1000を離れることができる。発光構造11の発光角度(例えば、140度)は、斜面172Cにより、発光装置1000の発光角度を小さくさせることができる(例えば、120度)。一方、第22C図に示すように、斜面172Cが、発光構造11よりも小さい高さを有する時に、発光構造11が発する一部の光は、斜面172Cで反射されず、発光装置1100を直接離れるので、発光装置1100の発光角度は、発光装置1000の発光角度よりも大きいが、発光構造11の発光角度よりも小さい(例えば、120度よりも大きく、140度よりも小さい)。斜面のところの部分の高さの設計により、発光装置が異なる発光角度を有すようにさせることができ、これにより、発光装置の応用分野を広げることができる。
11、11D、11E、11F 発光構造
110 パターン化基板
1101 上表面
1102 下表面
103 第一側表面
1104 第二側表面
1105 第三側表面
1106 第四側表面
1110 孔
111A、111B 発光本体
1111 第一型半導体層
1112 活性層
1113 第二型半導体層
1114 第一絶縁層
1115 第二絶縁層
1116 導電層
1117 第三絶縁層
1118 第一電極
1119 第二電極
1120 オーム接触層
1161 第一領域
1162 第二領域
1163 第三領域
112 トレンチ
211 電極層
1124 上表面
12 透光体
121 上表面
122 下表面
123 第一側表面
124 第二側表面
125 第三側表面
126 第四側表面
13 波長変換体
131 波長変換粒子
14 第一反射層
15A、15B 延伸電極
151 第一端
152 第二端
17、17A、17B、17C 第二反射層
171、171’、171’’、171’’’、171A、171B、171C 外表面
172、172’、172’’、172’’’、172A、172B、172C 内表面
172A1 斜面
172A2 平面
173 上表面
174 下表面
21、26 接着材
22、27 載置板
23、23A、23B カッター
231 溝
251 上金型
252 下金型
2521、38 凹部
37 反射フレーム
371 スルー孔
901 発光源
9011 載置板
902 導光板
903 拡散板
904 反射器
Claims (8)
- 発光装置であって、
側表面、上表面、及び前記上表面の対向側に位置する下表面を有する発光構造;
前記発光構造を包み覆い、且つ第一側表面、第二側表面、前記第一側表面の対向側に位置する第三側表面、及び前記第二側表面の対向側に位置する第四側表面を有する透光体;
前記発光構造の前記側表面並びに前記透光体の前記第一側表面及び前記第三側表面を覆い、且つ前記透光体の前記第二側表面及び前記第四側表面を覆わない第一反射層であって、外表面と、前記外表面に対向する内表面とを有し、且つ前記外表面と前記内表面との間の距離が前記発光構造の前記上表面から前記下表面への方向に減少する、第一反射層;
前記発光構造の前記下表面に位置し、且つ前記発光構造に電気接続される一対の延伸電極;及び
前記発光構造の前記下表面と、前記一対の延伸電極との間に位置し、且つ前記第一反射層に接続される第二反射層を含み、
前記第一反射層は基質及び該基質に混入される反射粒子を含み、前記基質は絶縁材料であり、
前記発光装置は、前記第一側表面に平行である方向において第一発光角度を有し、前記第二側表面に平行である方向において第二発光角度を有し、前記第二発光角度は、前記第一発光角度とは異なる、発光装置。 - 請求項1に記載の発光装置であって、
前記第一反射層の前記内表面は、前記上表面に対して傾斜する弧形状構造を有し、前記弧形状構造は、前記第二反射層に向かって凸の弧形状構造であり、且つ前記外表面と前記弧形状構造との間の前記距離は、前記発光構造の前記上表面から前記下表面への方向に減少する、発光装置。 - 請求項1に記載の発光装置であって、
前記一対の延伸電極は、前記第一反射層と直接接触しない、発光装置。 - 請求項1に記載の発光装置であって、
前記第一発光角度は、130~150度である、発光装置。 - 請求項1に記載の発光装置であって、
前記第二発光角度は、100~125度である、発光装置。 - 請求項1に記載の発光装置であって、
前記発光装置は、3つの出光面のみを含む、発光装置。 - 請求項1に記載の発光装置であって、
前記一対の延伸電極と前記第一反射層とは、一方向において重なり合う、発光装置。 - 請求項1に記載の発光装置であって、
前記一対の延伸電極と前記第一反射層の側面とは、ほぼ共平面である、発光装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104144679 | 2015-12-31 | ||
TW104144679 | 2015-12-31 | ||
TW105126557 | 2016-08-19 | ||
TW105126557 | 2016-08-19 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017120911A JP2017120911A (ja) | 2017-07-06 |
JP2017120911A5 JP2017120911A5 (ja) | 2020-02-20 |
JP7266961B2 true JP7266961B2 (ja) | 2023-05-01 |
Family
ID=57708468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016256568A Active JP7266961B2 (ja) | 2015-12-31 | 2016-12-28 | 発光装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10205070B2 (ja) |
EP (1) | EP3188263B1 (ja) |
JP (1) | JP7266961B2 (ja) |
KR (1) | KR102396074B1 (ja) |
CN (2) | CN106960901B (ja) |
TW (2) | TWI672547B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6665731B2 (ja) * | 2016-08-22 | 2020-03-13 | 豊田合成株式会社 | 発光装置及びその製造方法 |
US10680147B2 (en) * | 2017-11-24 | 2020-06-09 | Osram Oled Gmbh | Method of producing a lighting device |
WO2019106846A1 (ja) * | 2017-12-01 | 2019-06-06 | 日立化成株式会社 | 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム |
US11335842B2 (en) * | 2018-02-14 | 2022-05-17 | Maven Optronics Co., Ltd. | Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same |
US10770636B2 (en) | 2018-02-14 | 2020-09-08 | Epistar Corporation | Light emitting device and manufacturing method thereof |
TWD201606S (zh) * | 2018-06-28 | 2019-12-21 | 晶元光電股份有限公司 | 發光裝置 |
JP7348478B2 (ja) * | 2018-07-09 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
TWD198613S (zh) | 2018-08-08 | 2019-07-11 | 晶元光電股份有限公司 | 發光二極體之部分 |
CN112713166B (zh) * | 2019-10-25 | 2023-02-17 | 成都辰显光电有限公司 | 显示面板、电子设备及显示面板的制作方法 |
TWI753573B (zh) * | 2020-06-30 | 2022-01-21 | 光森科技有限公司 | 光源模組 |
CN214375712U (zh) | 2020-06-30 | 2021-10-08 | 光森科技有限公司 | 光源模块 |
EP3968390A1 (en) * | 2020-09-15 | 2022-03-16 | Eosopto Technology Co., Ltd | Light source module |
TWD214986S (zh) * | 2020-10-07 | 2021-11-01 | 晶元光電股份有限公司 | 發光二極體之部分 |
WO2022179689A1 (en) * | 2021-02-25 | 2022-09-01 | Ams-Osram International Gmbh | Component having hybrid reflector and method for producing therof |
DE102021202920A1 (de) * | 2021-03-25 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip, herstellungsverfahren und halbleiterbauteil |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004039778A (ja) | 2002-07-02 | 2004-02-05 | Matsushita Electric Ind Co Ltd | 照明用発光素子 |
JP2005072397A (ja) | 2003-08-26 | 2005-03-17 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
WO2011093454A1 (ja) | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2013143496A (ja) | 2012-01-11 | 2013-07-22 | Toshiba Corp | Ledパッケージ及びその製造方法 |
JP2015095658A (ja) | 2013-11-14 | 2015-05-18 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
US20150221623A1 (en) | 2014-02-05 | 2015-08-06 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19714170C1 (de) * | 1997-03-21 | 1998-07-30 | Siemens Ag | Elektrooptisches Modul |
JP2004127604A (ja) | 2002-09-30 | 2004-04-22 | Citizen Electronics Co Ltd | 発光ダイオード及びバックライトユニット |
JP4773048B2 (ja) * | 2003-09-30 | 2011-09-14 | シチズン電子株式会社 | 発光ダイオード |
JP4330476B2 (ja) * | 2004-03-29 | 2009-09-16 | スタンレー電気株式会社 | 半導体発光素子 |
KR20060077801A (ko) * | 2004-12-31 | 2006-07-05 | 엘지전자 주식회사 | 고출력 발광 다이오드 및 그의 제조 방법 |
JP2006253298A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP2007165696A (ja) * | 2005-12-15 | 2007-06-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TWM304049U (en) * | 2006-07-19 | 2007-01-01 | K Bridge Electronics Co Ltd | Light source of backlight module |
WO2008023468A1 (fr) * | 2006-08-25 | 2008-02-28 | Sharp Kabushiki Kaisha | Élément émettant de la lumière, ensemble émettant de la lumière, unité de rétroéclairage, et dispositif d'affichage à cristaux liquides |
TW200834954A (en) * | 2007-02-02 | 2008-08-16 | Lighthouse Technology Co Ltd | Light-emitting diode and backlight module comprising the same |
JP5315070B2 (ja) * | 2008-02-07 | 2013-10-16 | 昭和電工株式会社 | 化合物半導体発光ダイオード |
KR100972979B1 (ko) * | 2008-03-17 | 2010-07-29 | 삼성엘이디 주식회사 | 엘이디 패키지 및 그 제조방법 |
US7800125B2 (en) * | 2008-07-09 | 2010-09-21 | Himax Display, Inc. | Light-emitting diode package |
KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
JP5779097B2 (ja) | 2008-09-25 | 2015-09-16 | コーニンクレッカ フィリップス エヌ ヴェ | コーティングされた発光デバイス及び発光デバイスをコーティングする方法 |
KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
JP5075786B2 (ja) * | 2008-10-06 | 2012-11-21 | 株式会社東芝 | 発光装置及びその製造方法 |
JP5883646B2 (ja) | 2008-10-17 | 2016-03-15 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 発光装置の製造方法 |
CN201289864Y (zh) * | 2008-11-19 | 2009-08-12 | 深圳市聚飞光电有限公司 | 侧面发光二极管 |
JP2011061056A (ja) | 2009-09-11 | 2011-03-24 | Stanley Electric Co Ltd | 線状発光装置、その製造方法並びに面光源装置 |
TW201120486A (en) * | 2009-12-14 | 2011-06-16 | Coretronic Corp | Brightness enhancement film and backlight module |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
CN101872824A (zh) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法 |
US8770819B2 (en) * | 2010-07-12 | 2014-07-08 | Sharp Kabushiki Kaisha | Surface light-emitting device and display device |
TWI423098B (zh) * | 2010-07-15 | 2014-01-11 | Quanta Comp Inc | 光學觸控結構 |
US9134595B2 (en) * | 2011-09-29 | 2015-09-15 | Casio Computer Co., Ltd. | Phosphor device, illumination apparatus and projector apparatus |
TW201318221A (zh) * | 2011-10-26 | 2013-05-01 | Episil Technologies Inc | 發光二極體之矽支架及其製造方法 |
JP2013115088A (ja) | 2011-11-25 | 2013-06-10 | Citizen Holdings Co Ltd | 半導体発光装置 |
JP2013157523A (ja) * | 2012-01-31 | 2013-08-15 | Toyoda Gosei Co Ltd | 半導体発光素子、半導体発光素子の製造方法および発光装置 |
CN104137281B (zh) * | 2012-02-16 | 2017-09-08 | 西铁城电子株式会社 | 发光二极管和包含发光二极管的照明装置 |
JP5953155B2 (ja) * | 2012-02-24 | 2016-07-20 | スタンレー電気株式会社 | 半導体発光装置 |
CN103515506B (zh) * | 2012-06-15 | 2017-04-26 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
JP5891133B2 (ja) * | 2012-07-12 | 2016-03-22 | スタンレー電気株式会社 | 半導体発光装置 |
TWM461760U (zh) * | 2013-04-29 | 2013-09-11 | 勝華科技股份有限公司 | 光學透鏡與光源裝置 |
CN103280508B (zh) * | 2013-05-24 | 2015-12-23 | 江阴长电先进封装有限公司 | 一种晶圆级led封装方法 |
JP2015028984A (ja) * | 2013-07-30 | 2015-02-12 | 日亜化学工業株式会社 | 半導体発光素子 |
JP6215612B2 (ja) * | 2013-08-07 | 2017-10-18 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子、発光素子ウェーハ及び電子機器 |
KR102242660B1 (ko) * | 2013-09-11 | 2021-04-21 | 엘지디스플레이 주식회사 | 발광 다이오드 소자 및 이를 포함하는 백라이트 유닛과 이의 제조 방법 |
EP2854186A1 (en) | 2013-09-26 | 2015-04-01 | Seoul Semiconductor Co., Ltd. | Light source module, fabrication method therefor, and backlight unit including the same |
TWI520383B (zh) * | 2013-10-14 | 2016-02-01 | 新世紀光電股份有限公司 | 發光二極體封裝結構 |
JP6299176B2 (ja) | 2013-11-22 | 2018-03-28 | 日亜化学工業株式会社 | 発光装置およびその製造方法ならびにこの発光装置を備える照明装置 |
CN103618041B (zh) * | 2013-12-11 | 2016-03-30 | 江阴长电先进封装有限公司 | 一种esd保护的led封装结构及其封装方法 |
KR102020760B1 (ko) * | 2014-01-29 | 2019-09-11 | 루미리즈 홀딩 비.브이. | 캡슐화제로 채워지는 형광체-변환형 led 용의 얕은 반사기 컵 |
US9608168B2 (en) * | 2014-06-13 | 2017-03-28 | Seoul Viosys Co., Ltd. | Light emitting diode |
US10217904B2 (en) | 2015-02-03 | 2019-02-26 | Epistar Corporation | Light-emitting device with metallized mounting support structure |
-
2016
- 2016-12-28 JP JP2016256568A patent/JP7266961B2/ja active Active
- 2016-12-30 EP EP16207621.0A patent/EP3188263B1/en active Active
- 2016-12-30 TW TW105144197A patent/TWI672547B/zh active
- 2016-12-30 KR KR1020160184194A patent/KR102396074B1/ko active IP Right Grant
- 2016-12-30 TW TW108129560A patent/TWI731394B/zh active
- 2016-12-30 CN CN201611269825.9A patent/CN106960901B/zh active Active
- 2016-12-30 US US15/394,951 patent/US10205070B2/en active Active
- 2016-12-30 CN CN201910909540.4A patent/CN110649142B/zh active Active
-
2018
- 2018-12-27 US US16/234,066 patent/US10586902B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004039778A (ja) | 2002-07-02 | 2004-02-05 | Matsushita Electric Ind Co Ltd | 照明用発光素子 |
JP2005072397A (ja) | 2003-08-26 | 2005-03-17 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
WO2011093454A1 (ja) | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2013143496A (ja) | 2012-01-11 | 2013-07-22 | Toshiba Corp | Ledパッケージ及びその製造方法 |
JP2015095658A (ja) | 2013-11-14 | 2015-05-18 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
US20150221623A1 (en) | 2014-02-05 | 2015-08-06 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
Also Published As
Publication number | Publication date |
---|---|
JP2017120911A (ja) | 2017-07-06 |
EP3188263B1 (en) | 2024-04-03 |
US20170194540A1 (en) | 2017-07-06 |
CN106960901B (zh) | 2021-10-15 |
CN110649142B (zh) | 2024-01-16 |
KR102396074B1 (ko) | 2022-05-09 |
CN110649142A (zh) | 2020-01-03 |
EP3188263A1 (en) | 2017-07-05 |
TWI731394B (zh) | 2021-06-21 |
US10586902B2 (en) | 2020-03-10 |
TW201944146A (zh) | 2019-11-16 |
US10205070B2 (en) | 2019-02-12 |
KR20170080531A (ko) | 2017-07-10 |
CN106960901A (zh) | 2017-07-18 |
TW201727337A (zh) | 2017-08-01 |
TWI672547B (zh) | 2019-09-21 |
US20190172987A1 (en) | 2019-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7266961B2 (ja) | 発光装置 | |
CN108133997B (zh) | 发光装置 | |
US10804444B2 (en) | Light-emitting device and manufacturing method thereof | |
EP3033552B1 (en) | Methods for making optical components and products including same | |
JP6537891B2 (ja) | 発光装置及びその製造方法 | |
CN107039573B (zh) | 发光元件及其制造方法 | |
JP6089686B2 (ja) | 発光装置 | |
CN105845800B (zh) | 发光装置 | |
CN110071134B (zh) | 发光元件、其制造方法及显示模块 | |
KR20160129328A (ko) | 광 변환 플레이트, 이를 포함하는 발광 다이오드 패키지, 백라이트 유닛 및 표시장치 | |
JP7295437B2 (ja) | 発光装置 | |
CN110970545B (zh) | 发光装置 | |
TWI829671B (zh) | 發光裝置 | |
CN208127240U (zh) | 发光装置、背光单元及液晶显示器 | |
TWI476956B (zh) | 半導體發光元件及其製作方法 | |
US20230178697A1 (en) | Method of making a packaged device | |
US20210202795A1 (en) | Light-emitting module and method of manufacturing light-emitting module | |
WO2023189384A1 (ja) | 発光デバイスおよび画像表示装置 | |
JP2022129961A (ja) | 発光装置および面状光源 | |
JP2022099119A (ja) | 発光装置および面状光源 | |
JP2023054840A (ja) | 発光装置の製造方法 | |
CN117055264A (zh) | 背光模组及其制作方法、显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191226 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191226 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210331 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211108 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220308 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220602 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230313 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230322 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230419 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7266961 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |