TWD198613S - 發光二極體之部分 - Google Patents

發光二極體之部分

Info

Publication number
TWD198613S
TWD198613S TW107304600F TW107304600F TWD198613S TW D198613 S TWD198613 S TW D198613S TW 107304600 F TW107304600 F TW 107304600F TW 107304600 F TW107304600 F TW 107304600F TW D198613 S TWD198613 S TW D198613S
Authority
TW
Taiwan
Prior art keywords
design
light
emitting diode
dimensional view
unique
Prior art date
Application number
TW107304600F
Other languages
English (en)
Inventor
Hui-Fang Kao
Yao-Ning Chan
Hao-Chun Liang
Shih-Chang Lee
Original Assignee
晶元光電股份有限公司
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司, Epistar Corp filed Critical 晶元光電股份有限公司
Priority to TW107304600F priority Critical patent/TWD198613S/zh
Priority to US29/679,564 priority patent/USD928104S1/en
Publication of TWD198613S publication Critical patent/TWD198613S/zh
Priority to US29/798,333 priority patent/USD944218S1/en

Links

Abstract

【物品用途】;本創作係關於一種發光二極體之部分之外觀式樣設計。;【設計說明】;本設計係一種新穎造型之發光二極體之部分，即發光二極體的金屬電極及部分結構外形輪廓所構成的特有紋路，可使本設計具有簡潔且協調之視覺意象，進而使本設計之整體產生獨特之視覺效果。;圖式所揭露之虛線部分，為本案不主張設計之部分。;本設計之立體圖1、立體圖2為本設計之發光二極體之部分於不同視角之立體圖。
TW107304600F 2018-08-08 2018-08-08 發光二極體之部分 TWD198613S (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW107304600F TWD198613S (zh) 2018-08-08 2018-08-08 發光二極體之部分
US29/679,564 USD928104S1 (en) 2018-08-08 2019-02-07 Light-emitting diode
US29/798,333 USD944218S1 (en) 2018-08-08 2021-07-07 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107304600F TWD198613S (zh) 2018-08-08 2018-08-08 發光二極體之部分

Publications (1)

Publication Number Publication Date
TWD198613S true TWD198613S (zh) 2019-07-11

Family

ID=77245584

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107304600F TWD198613S (zh) 2018-08-08 2018-08-08 發光二極體之部分

Country Status (2)

Country Link
US (2) USD928104S1 (zh)
TW (1) TWD198613S (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD198613S (zh) * 2018-08-08 2019-07-11 晶元光電股份有限公司 發光二極體之部分
TWD214986S (zh) * 2020-10-07 2021-11-01 晶元光電股份有限公司 發光二極體之部分

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100665116B1 (ko) * 2005-01-27 2007-01-09 삼성전기주식회사 Ｅｓｄ 보호용 ｌｅｄ를 구비한 질화갈륨계 발광 소자 및그 제조 방법
KR100765075B1 (ko) * 2006-03-26 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광 소자 및 그 제조방법
USD579019S1 (en) * 2007-08-27 2008-10-21 Podium Photonics (Guangzhou) Ltd. Chip
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
USD656908S1 (en) * 2011-07-05 2012-04-03 Epistar Corporation Light emitting device
USD681564S1 (en) * 2011-11-24 2013-05-07 Epistar Corporation Light-emitting diode array
USD689448S1 (en) * 2012-01-20 2013-09-10 Sharp Kabushiki Kaisha Light emitting diode
USD681569S1 (en) * 2012-02-03 2013-05-07 Epistar Corporation Light-emitting diode array
USD709840S1 (en) * 2012-10-03 2014-07-29 Epistar Corporation Light-emitting diode
KR102080775B1 (ko) * 2013-06-19 2020-02-24 엘지이노텍 주식회사 발광소자
USD718259S1 (en) * 2013-08-13 2014-11-25 Epistar Corporation Light-emitting diode device
USD750580S1 (en) * 2014-10-30 2016-03-01 Epistar Corporation Light-emitting diode array
KR20160145888A (ko) * 2015-06-10 2016-12-21 삼성전자주식회사 발광소자 패키지
JP7266961B2 (ja) * 2015-12-31 2023-05-01 晶元光電股▲ふん▼有限公司 発光装置
TWD198613S (zh) * 2018-08-08 2019-07-11 晶元光電股份有限公司 發光二極體之部分
CN111987080B (zh) * 2019-05-24 2023-09-26 晶元光电股份有限公司 封装体与显示模块
US20210272945A1 (en) * 2019-06-13 2021-09-02 Lite-On Opto Technology (Changzhou) Co., Ltd. Multiple pixel package structure with buried chip and electronic device using the same

Also Published As

Publication number Publication date
USD944218S1 (en) 2022-02-22
USD928104S1 (en) 2021-08-17

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