JP2009177158A - 光電変換装置及びその製造方法 - Google Patents
光電変換装置及びその製造方法 Download PDFInfo
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- JP2009177158A JP2009177158A JP2008326712A JP2008326712A JP2009177158A JP 2009177158 A JP2009177158 A JP 2009177158A JP 2008326712 A JP2008326712 A JP 2008326712A JP 2008326712 A JP2008326712 A JP 2008326712A JP 2009177158 A JP2009177158 A JP 2009177158A
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- layer
- photoelectric conversion
- single crystal
- semiconductor layer
- oxide
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- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Chemical class 0.000 description 1
- 229920000768 polyamine Chemical class 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical compound C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 125000005259 triarylamine group Chemical class 0.000 description 1
- YWBFPKPWMSWWEA-UHFFFAOYSA-O triazolopyrimidine Chemical compound BrC1=CC=CC(C=2N=C3N=CN[N+]3=C(NCC=3C=CN=CC=3)C=2)=C1 YWBFPKPWMSWWEA-UHFFFAOYSA-O 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
【解決手段】単結晶半導体層の一方の面に第1電極と一導電型の第1不純物半導体層が設けられ、他方の面に一導電型とは逆の導電型の第2不純物半導体層が設けられた第1ユニットセルと、p型有機半導体とn型有機半導体とを含む第2ユニットセルとを有し、第1ユニットセルと第2ユニットセルは、中間層を介して直列接続され、中間層は遷移金属酸化物を含んでおり、第1電極の単結晶半導体層とは反対側の面に絶縁層が設けられ、絶縁層が支持基板と接合している光電変換装置である。
【選択図】図2
Description
図1は、本形態に係る光電変換装置100の平面図を示す。この光電変換装置100は、支持基板101上に固定された第1ユニットセル104及び第2ユニットセル105が設けられている。第1ユニットセル104及び第2ユニットセル105は半導体接合を含有し、それにより光電変換を行うように構成されている。
また、フラーレン類、カーボンナノチューブ類などを用いることもできる。
本実施の形態では、実施の形態1で示した中間層とは異なる構成の中間層について説明する。
本実施の形態では、実施の形態1で示した遷移金属酸化物からなる層と、実施の形態2で示した遷移金属酸化物と有機化合物とを複合した複合材料を含む層を積層した構成の中間層について説明する。
本実施の形態では、図1のA−B切断線に対応する断面構造として、図2の場合を前提として光電変換装置100の製造方法について説明する。
H2+e− → H2 ++2e− −Q (Q=15.39eV) (1)
H2 ++H2 → H3 ++H +Q (Q=1.49eV) (2)
実施の形態4において、図9(B)で半導体基板119を剥離することにより露出した単結晶半導体層106の表面は、損傷層121を形成したことにより結晶欠陥が残留する場合がある。その場合には単結晶半導体層106の表層部をエッチングにより除去しておくことが好ましい。エッチングはドライエッチング又はウエットエッチングで行う。また、単結晶半導体層106の劈開された面は、平均面粗さ(Ra)が7nm〜10nm、最大高低差(P−V)が300nm〜400nmの凹凸面が残留する場合がある。なお、ここでいう山谷の最大高低差とは、山頂と谷底の高さの差を示す。また、ここでいう山頂と谷底とはJIS B0601で定義されている「山頂」「谷底」を三次元に拡張したものであり、山頂とは指定面の山において最も標高の高いところ、谷底とは指定面の谷において最も標高の低いところと表現される。
本形態は、実施形態1と異なる製造工程を図15に示す。図15において、(A)保護膜120を形成して第1不純物半導体層107を形成した後、(B)保護膜120をそのまま残して損傷層121を形成しても良い。その後、(C)保護膜120を除去して第1電極103を形成する。このような工程とすることで、保護膜120を有効に利用することができる。すなわち、イオンの照射で損傷を受けた保護膜120を、第1電極103の形成前に除去することで、半導体基板119の表面の損傷を防止することができる。また、第1不純物半導体層107を通して水素のクラスターイオンが打ち込まれる損傷層121を形成することにより、第1不純物半導体層107の水素化を兼ねることができる。
本形態は、実施形態1と異なる製造工程を図16に示す。図16において、(A)半導体基板119に第1電極103を形成し、(B)第1電極103を通して一導電型の不純物を添加して第1不純物半導体層107を形成する。そして、(C)第1電極103を通して水素のクラスターイオンを打ち込み損傷層121を形成する。本工程では、第1電極103を最初に形成することにより、これをイオンドーピングにおける損傷防止層として利用することができる。また、イオンドーピングのために保護膜を形成する工程を省略することができる。また、第1不純物半導体層107を通して水素のクラスターイオンが打ち込まれる損傷層121を形成することにより、第1不純物半導体層107の水素化を兼ねることができる。
本形態は、実施形態1と異なる製造工程を図17に示す。図17において、(A)半導体基板119に第1電極103を形成し、(B)第1電極103を通して水素のクラスターイオンを打ち込み損傷層121を形成する。そして、(C)第1電極103を通して一導電型の不純物を添加して第1不純物半導体層107を形成する。本工程では、第1電極103を最初に形成することにより、これをイオンドーピングにおける損傷防止層として利用することができる。本形態では、イオンドーピングのために保護膜を形成する工程を省略することができる。
本形態は、実施形態1と異なる製造工程を図18に示す。図18において、(A)保護膜120を形成して水素のクラスターイオンを打ち込み損傷層121を形成し、(B)保護膜120をそのまま残して第1不純物半導体層107を形成する。そして、(C)保護膜120を除去して第1電極103を形成する。このような工程とすることで、保護膜120を有効に利用することができる。また、損傷層121を形成した後に、第1不純物半導体層107を形成することにより、該第1不純物半導体層107の不純物濃度を高濃度化することができ、浅い接合を形成することができる。それにより、裏面電界(BSF:Back Surface Field)効果により光生成キャリアの収集効率の高い光電変換装置を製造することができる。
本形態は、実施形態1と異なる製造工程を図19に示す。図19において、(A)保護膜120を形成して水素のクラスターイオンを打ち込み損傷層121を形成し、(B)保護膜120を除去して第1電極103を形成する。そして、(C)第1電極103を通して一導電型の不純物を添加して第1不純物半導体層107を形成する。第1電極103を通して第1不純物半導体層107を形成することにより、第1不純物半導体層107の厚さを制御することが容易となる。
実施形態1乃至10により製造される光電変換装置を用いた太陽光発電モジュールの一例を図20(A)に示す。この太陽光発電モジュール128は、支持基板101上に設けられた第1ユニットセル104と第2ユニットセル105により構成されている。
図21は太陽光発電モジュール128を用いた太陽光発電システムの一例を示す。一又は複数の太陽光発電モジュール128の出力電力は、充電制御回路129により蓄電池130を充電する。蓄電池130の充電量が多い場合には、負荷131に直接出力される場合もある。
101 支持基板
102 絶縁層
103 第1電極
104 第1ユニットセル
105 第2ユニットセル
106 単結晶半導体層
107 第1不純物半導体層
108 第2不純物半導体層
109 i層
110 p層
111 n層
112 第2電極
113 第1補助電極
114 第2補助電極
115 第3ユニットセル
116 非単結晶半導体層
117 第3不純物半導体層
118 第4不純物半導体層
119 半導体基板
120 保護膜
121 損傷層
122 イオンビーム
123 バリア層
124 パッシベーション層
125 レーザビーム
126 第1裏面電極
127 第2裏面電極
128 太陽光発電モジュール
129 充電制御回路
130 蓄電池
131 負荷
141 中間層
151 遷移金属酸化物からなる層
152 複合材料を含む層
161 複合材料を含む層
162 遷移金属酸化物からなる層
163 複合材料を含む層
200 イオン源
201 フィラメント
202 フィラメント電源
203 電源制御部
204 ガス供給部
205 引出し電極系
206 載置台
207 質量分析管
208 質量分析計
209 排気系
210 レーザ発振器
211 光学系
212 ガス噴射筒
213 ガス供給部
214 流量制御部
215 ガス加熱部
216 ガス供給部
217 シリンドリカルレンズアレイ
218 シリンドリカルレンズ
219 ミラー
220 ダブレットシリンドリカルレンズ
221 光導入窓
222 基板ステージ
224 スライダ
Claims (19)
- 単結晶半導体層の一方の面に第1電極と一導電型の第1不純物半導体層が設けられ、他方の面に一導電型とは逆の導電型の第2不純物半導体層が設けられた第1ユニットセルと、
p型有機半導体とn型有機半導体とを含む第2ユニットセルとを有し、前記第1ユニットセルと前記第2ユニットセルは、中間層を介して直列接続され、
前記中間層は遷移金属酸化物を含んでおり、
前記第1電極の前記単結晶半導体層とは反対側の面に絶縁層が設けられ、前記絶縁層が支持基板と接合していること
を特徴とする光電変換装置。 - 請求項1において、
前記遷移金属酸化物は、元素周期表における第4族乃至第8族に属する金属の酸化物であることを特徴とする光電変換装置。 - 請求項1において、
前記遷移金属酸化物は、酸化バナジウム、酸化ニオブ、酸化タンタル、酸化クロム、酸化モリブデン、酸化タングステン、酸化マンガン、酸化レニウムのいずれかであることを特徴とする光電変換装置。 - 請求項1乃至請求項3のいずれか一項において、
前記中間層は有機化合物を含んでいることを特徴とする光電変換装置。 - 請求項4において、
前記有機化合物は、芳香族アミン化合物、カルバゾール誘導体、芳香族炭化水素、高分子化合物のいずれかであることを特徴とする光電変換装置。 - 請求項1乃至請求項5のいずれか一項において、
前記単結晶半導体層の厚さが0.1μm以上、10μm以下であることを特徴とする光電変換装置。 - 請求項1乃至請求項6のいずれか一項において、
前記単結晶半導体層が単結晶シリコンであることを特徴とする光電変換装置。 - 請求項1乃至請求項7のいずれか一項において、
前記第1電極は、チタン、モリブデン、タングステン、タンタル、クロム、ニッケルから選択された金属材料であることを特徴とする光電変換装置。 - 請求項8において、
前記第1電極は、前記金属材料の窒化物層を有し、該窒化物層が前記第1不純物半導体層と接していることを特徴とする光電変換装置。 - 請求項1乃至請求項9のいずれか一項において、
前記絶縁層が、酸化シリコン層、酸化窒化シリコン層、窒化酸化シリコン層、又は窒化シリコン層であることを特徴とする光電変換装置。 - 請求項1乃至請求項10のいずれか一項において、
前記支持基板がガラス基板であることを特徴とする光電変換装置。 - 単結晶半導体基板の一の面に、該単結晶半導体基板の表面から10μm以下の深さにクラスターイオンを打ち込んで損傷層を形成すると共に、該一の面側に第1不純物半導体層、第1電極及び絶縁層を形成し、
前記絶縁層を支持基板と接合させ、前記単結晶半導体基板を前記損傷層から劈開して、該支持基板上に単結晶半導体層を残存させ、
該単結晶半導体層の劈開面側に第2不純物半導体層を形成し、
前記第2不純物半導体層上に中間層を形成し、
前記中間層上にp型有機半導体およびn型有機半導体を含む第2ユニットセルを形成し、
第2ユニットセル上に第2電極を形成すること
を特徴とする光電変換装置の製造方法。 - 水素イオンであって質量が水素分子よりも重いクラスターイオンを50%以上含むイオンビームを単結晶半導体基板の一面から注入し、該単結晶半導体基板の表面から所定の深さに損傷層を形成し、
前記単結晶半導体基板の前記クラスターイオンの注入面側に、少なくとも一導電型の第1不純物半導体層、該一導電型の第1不純物半導体層に接する第1電極、及び該第1電極上の絶縁層を形成し、
支持基板の一面に、前記単結晶半導体基板を、前記絶縁層を接して設け、
熱処理を行うことにより、前記損傷層に亀裂を生じさせ、前記支持基板上に単結晶半導体層を残存させたまま前記単結晶半導体基板を剥離して除去し、
前記単結晶半導体層の剥離により露出した面側に、一導電型とは逆の導電型の第2不純物半導体層を形成し、
前記第2不純物半導体層上に中間層を形成し、
前記中間層上にp型有機半導体およびn型有機半導体を含む第2ユニットセルを形成し、
第2ユニットセル上に第2電極を形成すること
を特徴とする光電変換装置の製造方法。 - 請求項12または請求項13において、
前記クラスターイオンが、H3 +であることを特徴とする光電変換装置の製造方法。 - 請求項12乃至請求項14のいずれか一項において、
前記中間層は、遷移金属酸化物を含むことを特徴とする光電変換装置の製造方法。 - 請求項12乃至請求項15のいずれか一項において、
前記遷移金属酸化物は、元素周期表における第4族乃至第8族に属する金属の酸化物であることを特徴とする光電変換装置の製造方法。 - 請求項12乃至請求項15のいずれか一項において、
前記遷移金属酸化物は、酸化バナジウム、酸化ニオブ、酸化タンタル、酸化クロム、酸化モリブデン、酸化タングステン、酸化マンガン、酸化レニウムのいずれかであることを特徴とする光電変換装置の製造方法。 - 請求項12乃至請求項17のいずれか一項において、
前記中間層は有機化合物を含んでいることを特徴とする光電変換装置の製造方法。 - 請求項18おいて、
前記有機化合物は、芳香族アミン化合物、カルバゾール誘導体、芳香族炭化水素、高分子化合物のいずれかであることを特徴とする光電変換装置の製造方法。
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EP2075850A3 (en) | 2011-08-24 |
JP5289927B2 (ja) | 2013-09-11 |
KR101558911B1 (ko) | 2015-10-08 |
US20090165854A1 (en) | 2009-07-02 |
KR20090073002A (ko) | 2009-07-02 |
EP2075850A2 (en) | 2009-07-01 |
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