JP5377061B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
- Publication number
- JP5377061B2 JP5377061B2 JP2009108991A JP2009108991A JP5377061B2 JP 5377061 B2 JP5377061 B2 JP 5377061B2 JP 2009108991 A JP2009108991 A JP 2009108991A JP 2009108991 A JP2009108991 A JP 2009108991A JP 5377061 B2 JP5377061 B2 JP 5377061B2
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- Prior art keywords
- semiconductor layer
- semiconductor
- layer
- crystal
- photoelectric conversion
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- 150000002367 halogens Chemical class 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- NLDYACGHTUPAQU-UHFFFAOYSA-N tetracyanoethylene Chemical group N#CC(C#N)=C(C#N)C#N NLDYACGHTUPAQU-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
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- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
図1は本形態に係る光電変換装置の構成を示す。図1に示す光電変換装置は、基板10上に設けられた第1電極12と、該第1電極12上に設けられた第1の半導体層14と、該第1の半導体層14上に設けられた第2の半導体層16と、該第2の半導体層16上に設けられた第3の半導体層22と、該第3の半導体層22上に設けられた第2電極24と、で構成される。第1の半導体層14と第3の半導体層22は相対する一導電型を付与する不純物元素が添加された不純物半導体層であり、一方がn型半導体層、他方がp型半導体層である。第1の半導体層14と第3の半導体層22との間に設けられる第2の半導体層16は、非晶質構造の中に第1の結晶領域と第2の結晶領域とを含むi型半導体層である。本発明の一態様に係る光電変換装置は、一対の不純物半導体層である第1の半導体層14と第3の半導体層22との間に、被膜の成膜方向に向かって成長する第1の結晶領域と第2の結晶領域とを含む半導体層である第2の半導体層を有することを特徴の一つとする。また、本形態に係る光電変換装置は、このような構成にすることにより少なくとも一つの半導体接合を含む。ここでは、第1の半導体層14はn型半導体、第3の半導体層22はp型半導体、第2の半導体層はi型半導体とする例を示す。
図5は、本形態に係る光電変換装置の構成を示す。この光電変換装置は、n型半導体である第1の半導体層14とp型半導体である第3の半導体層22に挟まれてi型半導体である第2の半導体層16を設けることにより、少なくとも一つの半導体接合を含んでいる。また、第1の半導体層14と第2の半導体層16の間に、低濃度不純物半導体層13を設ける構成を示す。低濃度不純物半導体層13は、第1の半導体層14と同じ導電型を付与する不純物元素を含み、且つ第1の半導体層14よりも不純物濃度が低い半導体層である。本形態では、低濃度不純物半導体層13は、n型半導体の例で説明する。
本形態では、ユニットセルを複数積層した、所謂スタック型(タンデム型を含む)光電変換装置について説明する。本形態では、単結晶半導体層(代表的には単結晶シリコン)を有するユニットセルをボトムセルとし、非単結晶半導体層(代表的には非単結晶シリコン)を有するユニットセルをトップセルとする光電変換装置の例を説明する。
本形態では、同一基板上に複数のユニットセルを形成し、複数のユニットセルを直列接続して光電変換装置を集積化する、所謂集積型光電変換装置の例を説明する。以下、集積型光電変換装置の作製工程および構成の概略について説明する。
本形態では、光電変換装置の他の態様として、光センサ装置の例を示す。
本形態では、上記実施の形態と異なる構成の集積型光電変換装置の例について説明する。以下、本形態に係る集積型光電変換装置の作製工程の概略について説明する。
12 第1電極
13 低濃度不純物半導体層
14 第1の半導体層
16 第2の半導体層
18 第1の結晶領域
20 第2の結晶領域
22 第3の半導体層
24 第2電極
Claims (3)
- 第1電極上に設けられ、微結晶半導体で形成された一導電型を付与する不純物元素を含む第1の半導体層と、
前記第1の半導体層上に設けられた第2の半導体層と、
前記第2の半導体層上に設けられ、前記一導電型とは逆導電型を付与する不純物元素を含む第3の半導体層と、
前記第3の半導体層上に設けられた第2電極と、
を有し、
前記第2の半導体層は、前記第1の半導体層との界面側に、前記第1の半導体層との界面から前記第3の半導体層に向かって幅が狭まっていく立体的形状を有する第1の結晶領域と、
前記第3の半導体層との界面側に、前記第3の半導体層との界面から前記第1の半導体層に向かって幅が狭まっていく立体的形状を有する第2の結晶領域と、
を含み、
前記第1の結晶領域は、前記第1の半導体層から前記第2の半導体層が成膜される方向に向けて上狭まりに成長しており、
前記第2の結晶領域は、前記第1の半導体層との界面とは離れた位置から上拡がりに成長しており、
前記第2の半導体層は、結晶質半導体である前記第1の結晶領域および前記第2の結晶領域が非晶質構造の中に存在し、
前記第2の半導体層は、二次イオン質量分析法によって計測される窒素濃度が2×1020/cm3以上7×1020/cm3以下の第1の領域を有し、
前記第1の領域を起点として、前記第2の結晶領域が前記第3の半導体層に向けて成長していることを特徴とする光電変換装置。 - 請求項1において、
前記第2の結晶領域は、単結晶、または、双晶を含む単結晶であることを特徴とする光電変換装置。 - 請求項1又は請求項2において、
前記第1の半導体層はn型半導体であり、前記第2の半導体層はi型半導体であり、前記第3の半導体層はp型半導体であることを特徴とする光電変換装置。
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US8344378B2 (en) * | 2009-06-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
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JP5666974B2 (ja) * | 2011-04-21 | 2015-02-12 | 株式会社東芝 | 半導体材料を用いた太陽電池 |
WO2013080766A1 (ja) * | 2011-11-30 | 2013-06-06 | 京セラ株式会社 | 光電変換装置 |
US9048099B2 (en) * | 2013-05-09 | 2015-06-02 | Applied Materials, Inc. | Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal |
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