JP2012209549A - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP2012209549A JP2012209549A JP2012056123A JP2012056123A JP2012209549A JP 2012209549 A JP2012209549 A JP 2012209549A JP 2012056123 A JP2012056123 A JP 2012056123A JP 2012056123 A JP2012056123 A JP 2012056123A JP 2012209549 A JP2012209549 A JP 2012209549A
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- semiconductor layer
- photoelectric conversion
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract
【解決手段】一対の電極間に、p型の導電型を有する第1の半導体層と、p型の導電型を有する第2の半導体層と、n型の導電型を有する第3の半導体層を積層し、pn接合を有する光電変換装置を形成する。第1の半導体層は化合物半導体層であり、第2の半導体層は有機化合物及び無機化合物からなり、該有機化合物には正孔輸送性の高い材料が用いられ、該無機化合物には、電子受容性を有する遷移金属酸化物が用いられる。
【選択図】図1
Description
本実施の形態では、本発明の一態様における光電変換装置、及びその作製方法について説明する。
本実施の形態では、実施の形態1で示した第2の半導体層について説明する。
110 第1の半導体層
120 第2の半導体層
130 第3の半導体層
150 第1の電極
160 透光性導電膜
170 第2の電極
200 基板
210 半導体層
250 第1の電極
260 透光性導電膜
270 第2の電極
280 バッファ層
Claims (6)
- 一対の電極間に、
p型の導電型を有する第1の半導体層と、
p型の導電型を有し、前記第1の半導体層と接する第2の半導体層と、
n型の導電型を有し、前記第2の半導体層と接する第3の半導体層と、
前記第3の半導体層と接する透光性導電膜と、
を有し、
前記第2の半導体層は、有機化合物及び無機化合物で形成されていることを特徴とする光電変換装置。 - 請求項1において、前記第1の半導体層は、Cu(In1−xGax)Se2(0≦x≦1、xは0以上1以下の値)で表される化合物半導体であることを特徴とする光電変換装置。
- 請求項1または2において、前記無機化合物は、元素周期表における第4族乃至第8族に属する金属の酸化物であることを特徴とする光電変換装置。
- 請求項1または2において、前記無機化合物は、V、Nb、Ta、Cr、Mo、W、Mn、Reのいずれかの元素の酸化物であることを特徴とする光電変換装置。
- 請求項1乃至4のいずれか一項において、前記有機化合物は、芳香族アミン化合物、カルバゾール誘導体、芳香族炭化水素、高分子化合物、ジベンゾフラン骨格もしくはジベンゾチオフェン骨格を含む複素環化合物のいずれかであることを特徴とする光電変換装置。
- 請求項1乃至5のいずれか一項において、前記第3の半導体層は、Zn、Cd、Ga、In、Ag、Pb、Mg、Sn、Sb、Te、Geから選ばれた元素を一つ以上含む酸化物で構成されていることを特徴とする光電変換装置。
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JP2014209538A (ja) * | 2013-03-27 | 2014-11-06 | 日本放送協会 | 光電変換素子、及び、光電変換素子の製造方法 |
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JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
US9112086B2 (en) | 2011-11-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP6108858B2 (ja) | 2012-02-17 | 2017-04-05 | 株式会社半導体エネルギー研究所 | p型半導体材料および半導体装置 |
JP6248118B2 (ja) * | 2012-11-09 | 2017-12-13 | ナノコ テクノロジーズ リミテッド | Cigs光起電力デバイス用モリブデン基板 |
TWI536584B (zh) * | 2015-05-15 | 2016-06-01 | 義守大學 | 光電轉換元件 |
KR102590315B1 (ko) * | 2018-05-28 | 2023-10-16 | 삼성전자주식회사 | 유기 광전 소자 및 이를 포함하는 적층형 이미지 센서 |
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