JP2012191188A - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
- Publication number
- JP2012191188A JP2012191188A JP2012034645A JP2012034645A JP2012191188A JP 2012191188 A JP2012191188 A JP 2012191188A JP 2012034645 A JP2012034645 A JP 2012034645A JP 2012034645 A JP2012034645 A JP 2012034645A JP 2012191188 A JP2012191188 A JP 2012191188A
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- JP
- Japan
- Prior art keywords
- semiconductor layer
- silicon semiconductor
- photoelectric conversion
- silicon
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 31
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 18
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 12
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 11
- -1 aromatic amine compound Chemical class 0.000 claims description 10
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 150000001716 carbazoles Chemical class 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical group C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 claims description 5
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 claims description 5
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 4
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 4
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 19
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 136
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- 239000000758 substrate Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 24
- 239000002131 composite material Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000000926 separation method Methods 0.000 description 13
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
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- 239000012535 impurity Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000010549 co-Evaporation Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
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- 239000011787 zinc oxide Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 238000002161 passivation Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 4
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- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
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- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
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- 229910052787 antimony Inorganic materials 0.000 description 2
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
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- 238000010792 warming Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
【解決手段】一対の電極間において、p型の透光性半導体層、i型の第1のシリコン半導体層、およびn型の第2のシリコン半導体層を積層し、p−i−n接合を有する光電変換装置を形成する。該透光性半導体層は、有機化合物及び無機化合物からなり、該有機化合物には正孔輸送性の高い材料が用いられ、該無機化合物には、電子受容性を有する遷移金属酸化物が用いられる。
【選択図】図1
Description
本実施の形態では、本発明の一態様における光電変換装置、及びその作製方法について説明する。
本実施の形態では、実施の形態1で示した透光性半導体層について説明する。
110 第1の電極
120 第2の電極
130 透光性半導体層
140 第1のシリコン半導体層
150 第2のシリコン半導体層
190 透光性導電膜
200 基板
210 第1の電極
220 第2の電極
230 第1の透光性半導体層
240 第1のシリコン半導体層
250 第2のシリコン半導体層
260 第2の透光性半導体層
270 第3のシリコン半導体層
280 第4のシリコン半導体層
310 第1の分離溝
320 第2の分離溝
330 第3の分離溝
410 第1の端子
420 第2の端子
Claims (9)
- 一対の電極間に、
透光性半導体層と、
前記透光性半導体層と接する第1のシリコン半導体層と、
前記第1のシリコン半導体層と接する第2のシリコン半導体層と、
を有し、
前記透光性半導体層は、有機化合物及び無機化合物で形成されていることを特徴とする光電変換装置。 - 請求項1において、前記透光性半導体層の導電型はp型であり、前記第1のシリコン半導体層の導電型はi型であり、前記第2のシリコン半導体層の導電型はn型であることを特徴とする光電変換装置。
- 請求項1または2において、前記第1のシリコン半導体層は、非単結晶、非晶質、微結晶または多結晶であることを特徴とする光電変換装置。
- 一対の電極間に、
第1の透光性半導体層と、
前記第1の透光性半導体層と接する第1のシリコン半導体層と、
前記第1のシリコン半導体層と接する第2のシリコン半導体層と、
前記第2のシリコン半導体層と接する第2の透光性半導体層と、
前記第2の透光性半導体層と接する第3のシリコン半導体層と、
前記第3のシリコン半導体層と接する第4のシリコン半導体層と、
を有し、
前記第1及び第2の透光性半導体層は、有機化合物及び無機化合物で形成されていることを特徴とする光電変換装置。 - 請求項4において、前記第1及び第2の透光性半導体層の導電型はp型であり、前記第1及び第3のシリコン半導体層の導電型はi型であり、前記第2及び第4のシリコン半導体層の導電型はn型であることを特徴とする光電変換装置。
- 請求項4または5において、前記第1のシリコン半導体層は非晶質であり、前記第3のシリコン半導体層は微結晶または多結晶であることを特徴とする光電変換装置。
- 請求項1乃至6のいずれか一項において、前記無機化合物は、元素周期表における第4族乃至第8族に属する金属の酸化物であることを特徴とする光電変換装置。
- 請求項1乃至6のいずれか一項において、前記無機化合物は、酸化バナジウム、酸化ニオブ、酸化タンタル、酸化クロム、酸化モリブデン、酸化タングステン、酸化マンガン、酸化レニウムのいずれかであることを特徴とする光電変換装置。
- 請求項1乃至8のいずれか一項において、前記有機化合物は、芳香族アミン化合物、カルバゾール誘導体、芳香族炭化水素、高分子化合物、ジベンゾフラン骨格もしくはジベンゾチオフェン骨格を含む複素環化合物のいずれかであることを特徴とする光電変換装置。
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US9437758B2 (en) | 2011-02-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP5927027B2 (ja) | 2011-10-05 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
JP6108858B2 (ja) | 2012-02-17 | 2017-04-05 | 株式会社半導体エネルギー研究所 | p型半導体材料および半導体装置 |
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