JP2009055008A - 液晶表示装置及び電子機器 - Google Patents

液晶表示装置及び電子機器 Download PDF

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Publication number
JP2009055008A
JP2009055008A JP2008188039A JP2008188039A JP2009055008A JP 2009055008 A JP2009055008 A JP 2009055008A JP 2008188039 A JP2008188039 A JP 2008188039A JP 2008188039 A JP2008188039 A JP 2008188039A JP 2009055008 A JP2009055008 A JP 2009055008A
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Prior art keywords
transistor
liquid crystal
layer
display device
semiconductor layer
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JP2008188039A
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Japanese (ja)
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JP2009055008A5 (enExample
Inventor
Yoshimoto Kurokawa
義元 黒川
Takayuki Ikeda
隆之 池田
Takeshi Nagata
剛 長多
Takayuki Inoue
卓之 井上
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008188039A priority Critical patent/JP2009055008A/ja
Publication of JP2009055008A publication Critical patent/JP2009055008A/ja
Publication of JP2009055008A5 publication Critical patent/JP2009055008A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008188039A 2007-07-27 2008-07-22 液晶表示装置及び電子機器 Withdrawn JP2009055008A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008188039A JP2009055008A (ja) 2007-07-27 2008-07-22 液晶表示装置及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007196489 2007-07-27
JP2008188039A JP2009055008A (ja) 2007-07-27 2008-07-22 液晶表示装置及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014085387A Division JP5840723B2 (ja) 2007-07-27 2014-04-17 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009055008A true JP2009055008A (ja) 2009-03-12
JP2009055008A5 JP2009055008A5 (enExample) 2011-09-01

Family

ID=40294995

Family Applications (11)

Application Number Title Priority Date Filing Date
JP2008188039A Withdrawn JP2009055008A (ja) 2007-07-27 2008-07-22 液晶表示装置及び電子機器
JP2014085387A Expired - Fee Related JP5840723B2 (ja) 2007-07-27 2014-04-17 半導体装置の作製方法
JP2015221060A Active JP6158898B2 (ja) 2007-07-27 2015-11-11 表示装置
JP2017113133A Active JP6469169B2 (ja) 2007-07-27 2017-06-08 表示装置
JP2019004040A Active JP6734945B2 (ja) 2007-07-27 2019-01-15 表示装置
JP2020027724A Active JP6754019B2 (ja) 2007-07-27 2020-02-21 液晶表示装置
JP2020139098A Withdrawn JP2020201504A (ja) 2007-07-27 2020-08-20 液晶表示装置
JP2021084261A Active JP7105341B2 (ja) 2007-07-27 2021-05-19 表示装置
JP2022111332A Withdrawn JP2022140472A (ja) 2007-07-27 2022-07-11 表示装置
JP2023018537A Withdrawn JP2023075087A (ja) 2007-07-27 2023-02-09 表示装置
JP2024129135A Withdrawn JP2024153898A (ja) 2007-07-27 2024-08-05 表示装置

Family Applications After (10)

Application Number Title Priority Date Filing Date
JP2014085387A Expired - Fee Related JP5840723B2 (ja) 2007-07-27 2014-04-17 半導体装置の作製方法
JP2015221060A Active JP6158898B2 (ja) 2007-07-27 2015-11-11 表示装置
JP2017113133A Active JP6469169B2 (ja) 2007-07-27 2017-06-08 表示装置
JP2019004040A Active JP6734945B2 (ja) 2007-07-27 2019-01-15 表示装置
JP2020027724A Active JP6754019B2 (ja) 2007-07-27 2020-02-21 液晶表示装置
JP2020139098A Withdrawn JP2020201504A (ja) 2007-07-27 2020-08-20 液晶表示装置
JP2021084261A Active JP7105341B2 (ja) 2007-07-27 2021-05-19 表示装置
JP2022111332A Withdrawn JP2022140472A (ja) 2007-07-27 2022-07-11 表示装置
JP2023018537A Withdrawn JP2023075087A (ja) 2007-07-27 2023-02-09 表示装置
JP2024129135A Withdrawn JP2024153898A (ja) 2007-07-27 2024-08-05 表示装置

Country Status (5)

Country Link
US (1) US8330887B2 (enExample)
JP (11) JP2009055008A (enExample)
KR (1) KR101568121B1 (enExample)
CN (1) CN101354511B (enExample)
TW (1) TWI470330B (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011103370A (ja) * 2009-11-11 2011-05-26 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2011109081A (ja) * 2009-10-21 2011-06-02 Semiconductor Energy Lab Co Ltd 液晶表示装置及び当該液晶表示装置を具備する電子機器
JP2011171727A (ja) * 2010-01-24 2011-09-01 Semiconductor Energy Lab Co Ltd 表示装置とその作製方法
JP2011191754A (ja) * 2010-02-18 2011-09-29 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
JP2013037103A (ja) * 2011-08-05 2013-02-21 Japan Display Central Co Ltd 液晶表示装置
JP2016058448A (ja) * 2014-09-05 2016-04-21 Dic株式会社 薄膜トランジスタの製造方法、薄膜トランジスタ及びトランジスタアレイ
US20170256653A1 (en) * 2016-03-02 2017-09-07 Innolux Corporation Display panel
JP2017220676A (ja) * 2010-01-24 2017-12-14 株式会社半導体エネルギー研究所 表示装置
JP2019057720A (ja) * 2009-09-16 2019-04-11 株式会社半導体エネルギー研究所 液晶表示装置の作製方法及び発光装置の作製方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009071289A (ja) 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
JP5376826B2 (ja) * 2008-04-04 2013-12-25 富士フイルム株式会社 半導体装置，半導体装置の製造方法及び表示装置
CN101866082B (zh) * 2009-04-15 2012-05-23 瀚宇彩晶股份有限公司 液晶显示器的像素结构及其形成方法
KR102012160B1 (ko) * 2009-05-02 2019-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 패널
KR101084273B1 (ko) * 2010-03-03 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
JP2011253921A (ja) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp アクティブマトリックス基板及び液晶装置
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8907385B2 (en) * 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
CN103760721A (zh) * 2014-01-08 2014-04-30 北京京东方光电科技有限公司 薄膜晶体管阵列基板及其制备方法、显示装置
CN103969875B (zh) * 2014-05-04 2016-06-29 京东方科技集团股份有限公司 显示基板及其制作方法、掩膜板、掩膜板组
WO2015181679A1 (en) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104091810A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104241345B (zh) 2014-07-31 2017-11-28 京东方科技集团股份有限公司 铝电极、形成铝电极的方法及其电子设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326314A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPH0888397A (ja) * 1994-09-16 1996-04-02 Casio Comput Co Ltd 光電変換素子
JPH0982978A (ja) * 1995-09-20 1997-03-28 Hitachi Ltd 半導体装置及びこれを用いた液晶表示装置
JPH0992841A (ja) * 1995-09-28 1997-04-04 Nec Corp 電界効果型薄膜トランジスタの製造方法
JP2000054313A (ja) * 1998-08-11 2000-02-22 Abg Allgemeine Baumas Gmbh 舗装機械
JP2003297850A (ja) * 2002-04-02 2003-10-17 Advanced Display Inc 薄膜トランジスタアレイ及びその製造方法並びにこれを用いた液晶表示装置
JP2005150685A (ja) * 2003-07-18 2005-06-09 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091334A (en) 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS6098680A (ja) 1983-11-04 1985-06-01 Seiko Instr & Electronics Ltd 電界効果型薄膜トランジスタ
JPS6187371A (ja) 1984-10-05 1986-05-02 Hitachi Ltd 薄膜半導体装置
JPS61138285A (ja) 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
US5084777A (en) 1989-11-14 1992-01-28 Greyhawk Systems, Inc. Light addressed liquid crystal light valve incorporating electrically insulating light blocking material of a-SiGe:H
JPH03278480A (ja) * 1990-03-27 1991-12-10 Canon Inc 薄膜半導体装置
JPH0480722A (ja) * 1990-07-23 1992-03-13 Hitachi Ltd アクテイブマトリックス液晶表示装置
EP0473988A1 (en) 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
TW222345B (en) 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
JPH07142405A (ja) * 1993-11-19 1995-06-02 Sanyo Electric Co Ltd 多結晶半導体膜およびその成膜方法
JPH08201853A (ja) * 1994-11-24 1996-08-09 Toshiba Electron Eng Corp 電極基板および平面表示装置
TW303526B (enExample) 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JP2661594B2 (ja) 1995-05-25 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
US5815226A (en) 1996-02-29 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of fabricating same
JP3904646B2 (ja) 1996-02-29 2007-04-11 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JPH112836A (ja) * 1997-06-10 1999-01-06 Hitachi Ltd アクティブマトリクス液晶表示装置
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
KR100477130B1 (ko) * 1997-09-25 2005-08-29 삼성전자주식회사 평면구동방식액정표시장치의박막트랜지스터기판및제조방법
KR20010032543A (ko) 1997-11-28 2001-04-25 모리시타 요이찌 반사형 표시소자 및 반사형 표시소자를 이용한 영상장치
US6486933B1 (en) * 1998-03-12 2002-11-26 Samsung Electronics Co., Ltd. Liquid crystal display with preventing vertical cross-talk having overlapping data lines
JP4323724B2 (ja) * 1999-03-05 2009-09-02 セイコーエプソン株式会社 半導体装置の製造方法
JP2001077366A (ja) 1999-08-20 2001-03-23 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ、液晶表示装置、及び薄膜トランジスタの製造方法
JP2001092379A (ja) 1999-09-27 2001-04-06 Nec Corp アクティブマトリックス基板及びその製造方法
JP3819651B2 (ja) * 1999-10-20 2006-09-13 株式会社日立製作所 アクティブ・マトリクス型液晶表示装置
JP3538088B2 (ja) 1999-10-25 2004-06-14 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタおよびその製造方法
KR100493869B1 (ko) * 1999-12-16 2005-06-10 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치 및 그 제조방법
JP3687452B2 (ja) * 1999-12-27 2005-08-24 株式会社日立製作所 液晶表示装置
JP2001318627A (ja) 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
JP2001311963A (ja) 2000-04-27 2001-11-09 Toshiba Corp 液晶表示装置および液晶表示装置の製造方法
KR100709704B1 (ko) * 2000-05-12 2007-04-19 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
JP2001343669A (ja) 2000-06-02 2001-12-14 Hitachi Ltd 液晶表示装置
JP4290349B2 (ja) * 2000-06-12 2009-07-01 セイコーエプソン株式会社 半導体装置の製造方法
US6879110B2 (en) 2000-07-27 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Method of driving display device
JP3554977B2 (ja) 2000-09-27 2004-08-18 松下電器産業株式会社 液晶表示装置
JP3914753B2 (ja) 2000-11-30 2007-05-16 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス型液晶表示装置およびスイッチング素子
JP2002246605A (ja) 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd 液晶表示用薄膜トランジスタの製造方法
TW541584B (en) 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
JP5072157B2 (ja) 2001-09-27 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003243668A (ja) * 2001-12-12 2003-08-29 Seiko Epson Corp 電気光学装置、液晶装置ならびに投射型表示装置
KR100872494B1 (ko) * 2002-12-31 2008-12-05 엘지디스플레이 주식회사 액정 표시 장치용 어레이 기판의 제조 방법
TW577176B (en) 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
TW586237B (en) * 2003-05-09 2004-05-01 Au Optronics Corp Structure of a low temperature polysilicon thin film transistor
KR101085150B1 (ko) * 2003-06-28 2011-11-18 엘지디스플레이 주식회사 횡전계 방식의 액정표시장치 및 그의 제조방법
TWI368774B (en) 2003-07-14 2012-07-21 Semiconductor Energy Lab Light-emitting device
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP4507540B2 (ja) * 2003-09-12 2010-07-21 カシオ計算機株式会社 薄膜トランジスタ
KR100846006B1 (ko) * 2003-11-28 2008-07-11 니폰 제온 가부시키가이샤 액티브 매트릭스 표시 장치 및 박막 트랜지스터 집적 회로 장치
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
KR101004508B1 (ko) * 2003-12-23 2010-12-31 엘지디스플레이 주식회사 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법
KR100982122B1 (ko) * 2003-12-30 2010-09-14 엘지디스플레이 주식회사 수평 전계 인가형 박막 트랜지스터 기판의 불량 화소암점화 방법
JP2005286320A (ja) * 2004-03-04 2005-10-13 Semiconductor Energy Lab Co Ltd パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
TWI255399B (en) * 2004-06-18 2006-05-21 Integrated Circuit Solution In Input buffer circuit for transforming TTL into CMOS and for reducing the consumed powe
TWI252587B (en) * 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
KR20060124998A (ko) 2005-06-01 2006-12-06 엘지.필립스 엘시디 주식회사 횡전계 방식 액정표시장치
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101137840B1 (ko) 2005-06-23 2012-04-20 엘지디스플레이 주식회사 횡전계방식 액정표시소자
JP4577114B2 (ja) 2005-06-23 2010-11-10 ソニー株式会社 薄膜トランジスタの製造方法および表示装置の製造方法
KR101147118B1 (ko) * 2005-06-30 2012-05-25 엘지디스플레이 주식회사 미세 패턴 형성 방법과 그를 이용한 액정 표시 장치의 제조 방법
JP2007035964A (ja) 2005-07-27 2007-02-08 Sony Corp 薄膜トランジスタとその製造方法、及び表示装置
KR101157954B1 (ko) 2005-09-28 2012-06-22 엘지디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
US8212953B2 (en) 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101180718B1 (ko) 2005-12-29 2012-09-07 엘지디스플레이 주식회사 횡전계형 액정표시장치용 어레이 기판 및 그 제조 방법
KR101184068B1 (ko) * 2005-12-30 2012-09-19 엘지디스플레이 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
TWI299213B (en) * 2006-05-05 2008-07-21 Prime View Int Co Ltd Muti-channel thin film transistor
US8974918B2 (en) * 2006-07-04 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWI311337B (en) * 2006-10-02 2009-06-21 Au Optronics Corporatio Multi-domain vertical alignment pixel structure and fabrication method thereof
US8022466B2 (en) 2006-10-27 2011-09-20 Macronix International Co., Ltd. Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same
JP4420032B2 (ja) 2007-01-31 2010-02-24 ソニー株式会社 薄膜半導体装置の製造方法
JP5364293B2 (ja) 2007-06-01 2013-12-11 株式会社半導体エネルギー研究所 表示装置の作製方法およびプラズマｃｖｄ装置
JP5331389B2 (ja) 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
US8921858B2 (en) 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7998800B2 (en) 2007-07-06 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8334537B2 (en) 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
TWI575293B (zh) 2007-07-20 2017-03-21 半導體能源研究所股份有限公司 液晶顯示裝置
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
US7897971B2 (en) 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326314A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPH0888397A (ja) * 1994-09-16 1996-04-02 Casio Comput Co Ltd 光電変換素子
JPH0982978A (ja) * 1995-09-20 1997-03-28 Hitachi Ltd 半導体装置及びこれを用いた液晶表示装置
JPH0992841A (ja) * 1995-09-28 1997-04-04 Nec Corp 電界効果型薄膜トランジスタの製造方法
JP2000054313A (ja) * 1998-08-11 2000-02-22 Abg Allgemeine Baumas Gmbh 舗装機械
JP2003297850A (ja) * 2002-04-02 2003-10-17 Advanced Display Inc 薄膜トランジスタアレイ及びその製造方法並びにこれを用いた液晶表示装置
JP2005150685A (ja) * 2003-07-18 2005-06-09 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019057720A (ja) * 2009-09-16 2019-04-11 株式会社半導体エネルギー研究所 液晶表示装置の作製方法及び発光装置の作製方法
JP2011109081A (ja) * 2009-10-21 2011-06-02 Semiconductor Energy Lab Co Ltd 液晶表示装置及び当該液晶表示装置を具備する電子機器
US10714622B2 (en) 2009-10-21 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
KR101801959B1 (ko) * 2009-10-21 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기
US9559208B2 (en) 2009-10-21 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
JP2011103370A (ja) * 2009-11-11 2011-05-26 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
US12183299B2 (en) 2010-01-24 2024-12-31 Semiconductor Energy Laboratory Co., Ltd. Display device
US11887553B2 (en) 2010-01-24 2024-01-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9117732B2 (en) 2010-01-24 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US11935896B2 (en) 2010-01-24 2024-03-19 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US11557263B2 (en) 2010-01-24 2023-01-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US11362112B2 (en) 2010-01-24 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US11276359B2 (en) 2010-01-24 2022-03-15 Semiconductor Energy Laboratory Co., Ltd. Display device
US12369403B2 (en) 2010-01-24 2025-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2011171727A (ja) * 2010-01-24 2011-09-01 Semiconductor Energy Lab Co Ltd 表示装置とその作製方法
JP2017220676A (ja) * 2010-01-24 2017-12-14 株式会社半導体エネルギー研究所 表示装置
US10510309B2 (en) 2010-01-24 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US9337191B2 (en) 2010-02-18 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11769462B2 (en) 2010-02-18 2023-09-26 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US12424177B2 (en) 2010-02-18 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10153303B2 (en) 2010-02-18 2018-12-11 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10586505B2 (en) 2010-02-18 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2011191754A (ja) * 2010-02-18 2011-09-29 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
US11170728B2 (en) 2010-02-18 2021-11-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2017208536A (ja) * 2010-02-18 2017-11-24 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US12100368B2 (en) 2010-02-18 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11455969B2 (en) 2010-02-18 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8797482B2 (en) 2011-08-05 2014-08-05 Japan Display Inc. Liquid crystal display device
JP2013037103A (ja) * 2011-08-05 2013-02-21 Japan Display Central Co Ltd 液晶表示装置
JP2016058448A (ja) * 2014-09-05 2016-04-21 Dic株式会社 薄膜トランジスタの製造方法、薄膜トランジスタ及びトランジスタアレイ
US10193068B2 (en) 2014-09-05 2019-01-29 Dis Corporation Method of manufacturing a specifically dimensioned thin film transistor, thin film transistor, and transistor array
US20170256653A1 (en) * 2016-03-02 2017-09-07 Innolux Corporation Display panel
CN107154402A (zh) * 2016-03-02 2017-09-12 群创光电股份有限公司 显示面板
TWI608599B (zh) * 2016-03-02 2017-12-11 Innolux Corp 顯示面板
US10304965B2 (en) 2016-03-02 2019-05-28 Innolux Corporation Display panel

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