JP2007519262A5 - - Google Patents
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- Publication number
- JP2007519262A5 JP2007519262A5 JP2006551378A JP2006551378A JP2007519262A5 JP 2007519262 A5 JP2007519262 A5 JP 2007519262A5 JP 2006551378 A JP2006551378 A JP 2006551378A JP 2006551378 A JP2006551378 A JP 2006551378A JP 2007519262 A5 JP2007519262 A5 JP 2007519262A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thermal conductivity
- nitride
- silicon carbide
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 25
- 229910002601 GaN Inorganic materials 0.000 claims 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims 22
- 229910003460 diamond Inorganic materials 0.000 claims 21
- 239000010432 diamond Substances 0.000 claims 21
- 150000004767 nitrides Chemical class 0.000 claims 19
- 239000000463 material Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 7
- 239000002131 composite material Substances 0.000 claims 7
- 239000002243 precursor Substances 0.000 claims 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 6
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 238000005253 cladding Methods 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052582 BN Inorganic materials 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 2
- 230000001965 increasing effect Effects 0.000 claims 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims 2
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims 2
- 239000000395 magnesium oxide Substances 0.000 claims 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- -1 nickel aluminate Chemical class 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/707,898 US7033912B2 (en) | 2004-01-22 | 2004-01-22 | Silicon carbide on diamond substrates and related devices and methods |
| US10/707,898 | 2004-01-22 | ||
| PCT/US2005/002221 WO2005074013A2 (en) | 2004-01-22 | 2005-01-14 | Silicon carbide on diamond substrates and related devices and methods |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012148508A Division JP6227231B2 (ja) | 2004-01-22 | 2012-07-02 | ダイアモンド基板上炭化珪素並びに関連するデバイス及び方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007519262A JP2007519262A (ja) | 2007-07-12 |
| JP2007519262A5 true JP2007519262A5 (enExample) | 2008-02-21 |
| JP5192152B2 JP5192152B2 (ja) | 2013-05-08 |
Family
ID=34794562
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006551378A Expired - Lifetime JP5192152B2 (ja) | 2004-01-22 | 2005-01-14 | ダイアモンド基板上炭化珪素並びに関連するデバイス及び方法 |
| JP2012148508A Expired - Lifetime JP6227231B2 (ja) | 2004-01-22 | 2012-07-02 | ダイアモンド基板上炭化珪素並びに関連するデバイス及び方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012148508A Expired - Lifetime JP6227231B2 (ja) | 2004-01-22 | 2012-07-02 | ダイアモンド基板上炭化珪素並びに関連するデバイス及び方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US7033912B2 (enExample) |
| EP (2) | EP3496152B1 (enExample) |
| JP (2) | JP5192152B2 (enExample) |
| KR (1) | KR20060127907A (enExample) |
| CN (1) | CN100530544C (enExample) |
| CA (1) | CA2554003A1 (enExample) |
| TW (1) | TW200537564A (enExample) |
| WO (1) | WO2005074013A2 (enExample) |
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- 2005-01-14 CN CNB2005800029687A patent/CN100530544C/zh not_active Expired - Lifetime
- 2005-01-21 TW TW94101865A patent/TW200537564A/zh unknown
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2006
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2009
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2010
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