KR20060127907A - 다이아몬드 기판 상의 실리콘 카바이드, 그와 관련된디바이스 및 제조 방법 - Google Patents

다이아몬드 기판 상의 실리콘 카바이드, 그와 관련된디바이스 및 제조 방법 Download PDF

Info

Publication number
KR20060127907A
KR20060127907A KR20067014842A KR20067014842A KR20060127907A KR 20060127907 A KR20060127907 A KR 20060127907A KR 20067014842 A KR20067014842 A KR 20067014842A KR 20067014842 A KR20067014842 A KR 20067014842A KR 20060127907 A KR20060127907 A KR 20060127907A
Authority
KR
South Korea
Prior art keywords
layer
silicon carbide
diamond
thermal conductivity
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR20067014842A
Other languages
English (en)
Korean (ko)
Inventor
애덤 윌리엄 색슬러
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20060127907A publication Critical patent/KR20060127907A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR20067014842A 2004-01-22 2005-01-14 다이아몬드 기판 상의 실리콘 카바이드, 그와 관련된디바이스 및 제조 방법 Withdrawn KR20060127907A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,898 US7033912B2 (en) 2004-01-22 2004-01-22 Silicon carbide on diamond substrates and related devices and methods
US10/707,898 2004-01-22

Publications (1)

Publication Number Publication Date
KR20060127907A true KR20060127907A (ko) 2006-12-13

Family

ID=34794562

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20067014842A Withdrawn KR20060127907A (ko) 2004-01-22 2005-01-14 다이아몬드 기판 상의 실리콘 카바이드, 그와 관련된디바이스 및 제조 방법

Country Status (8)

Country Link
US (5) US7033912B2 (enExample)
EP (2) EP1706895B1 (enExample)
JP (2) JP5192152B2 (enExample)
KR (1) KR20060127907A (enExample)
CN (1) CN100530544C (enExample)
CA (1) CA2554003A1 (enExample)
TW (1) TW200537564A (enExample)
WO (1) WO2005074013A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102273305B1 (ko) * 2020-04-23 2021-07-06 알에프에이치아이씨 주식회사 신뢰성을 개선한 다이아몬드 기판 상 질화 갈륨 반도체 구조체 및 이를 제조하는 공정
KR20230080475A (ko) * 2020-10-06 2023-06-07 소이텍 갈륨계 ⅲ-n 합금층의 에피택셜 성장을 위한 기판 제조 방법

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023024B2 (en) * 2003-03-31 2006-04-04 Inphot, Inc. Diamond based blue/UV emission source
US8034643B2 (en) 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
KR20070013273A (ko) * 2004-03-15 2007-01-30 팅기 테크놀러지스 프라이빗 리미티드 반도체 장치의 제조
CN1998094B (zh) 2004-04-07 2012-12-26 霆激技术有限公司 半导体发光二极管上的反射层的制造
US20060073621A1 (en) * 2004-10-01 2006-04-06 Palo Alto Research Center Incorporated Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7713839B2 (en) * 2004-10-06 2010-05-11 Intel Corporation Diamond substrate formation for electronic assemblies
JP4866007B2 (ja) * 2005-01-14 2012-02-01 富士通株式会社 化合物半導体装置
GB0505752D0 (en) * 2005-03-21 2005-04-27 Element Six Ltd Diamond based substrate for gan devices
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US7749863B1 (en) * 2005-05-12 2010-07-06 Hrl Laboratories, Llc Thermal management substrates
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US7166485B1 (en) * 2005-07-05 2007-01-23 Sharp Laboratories Of America, Inc. Superlattice nanocrystal Si-SiO2 electroluminescence device
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7470958B2 (en) * 2005-07-28 2008-12-30 Panasonic Corporation Semiconductor device
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) * 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
JP4705482B2 (ja) * 2006-01-27 2011-06-22 パナソニック株式会社 トランジスタ
US20080292528A1 (en) * 2006-04-07 2008-11-27 Faris Sadeg M Methods of and systems for forming carbon based materials
WO2007116517A1 (ja) * 2006-04-10 2007-10-18 Fujitsu Limited 化合物半導体構造とその製造方法
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP2010517261A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド 電子電界効果デバイス及びそれらの製造方法
US7646025B1 (en) * 2007-05-31 2010-01-12 Chien-Min Sung Diamond LED devices and associated methods
US8110846B2 (en) * 2007-05-31 2012-02-07 Chien-Min Sung Diamond semiconductor devices and associated methods
US8309967B2 (en) 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US7781256B2 (en) * 2007-05-31 2010-08-24 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US7791188B2 (en) 2007-06-18 2010-09-07 Chien-Min Sung Heat spreader having single layer of diamond particles and associated methods
US20090075455A1 (en) * 2007-09-14 2009-03-19 Umesh Mishra Growing N-polar III-nitride Structures
US8490678B2 (en) * 2008-06-02 2013-07-23 Gerald Ho Kim Silicon-based thermal energy transfer device and apparatus
JP5115735B2 (ja) * 2008-09-04 2013-01-09 富士電機株式会社 炭化珪素半導体基板とその製造方法
US7888171B2 (en) * 2008-12-22 2011-02-15 Raytheon Company Fabricating a gallium nitride layer with diamond layers
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
US20110140232A1 (en) * 2009-12-15 2011-06-16 Intersil Americas Inc. Methods of forming a thermal conduction region in a semiconductor structure and structures resulting therefrom
US20110180855A1 (en) * 2010-01-28 2011-07-28 Gm Global Technology Operations, Inc. Non-direct bond copper isolated lateral wide band gap semiconductor device
JP5506919B2 (ja) * 2010-04-22 2014-05-28 三菱電機株式会社 半導体装置およびその製造方法
CN102859654B (zh) * 2010-05-10 2016-01-13 三菱电机株式会社 碳化硅外延晶片及其制造方法、外延生长用碳化硅块状衬底及其制造方法
GB201010705D0 (en) * 2010-06-25 2010-08-11 Element Six Ltd Substrates for semiconductor devices
KR101834802B1 (ko) * 2011-09-01 2018-04-13 엘지이노텍 주식회사 반도체 소자
JP5546514B2 (ja) * 2011-09-20 2014-07-09 古河電気工業株式会社 窒化物半導体素子及び製造方法
US8884308B2 (en) 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
GB201121655D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
GB201121659D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
GB201121666D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Synthetic diamond coated compound semiconductor substrates
US8614447B2 (en) * 2012-01-30 2013-12-24 International Business Machines Corporation Semiconductor substrates using bandgap material between III-V channel material and insulator layer
WO2013130873A1 (en) 2012-02-29 2013-09-06 Group4 Labs, Inc. Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
US8575657B2 (en) 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
US9496197B1 (en) 2012-04-20 2016-11-15 Hrl Laboratories, Llc Near junction cooling for GaN devices
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
US20150279945A1 (en) 2012-10-26 2015-10-01 Daniel Francis Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same
GB2510468B (en) * 2012-12-18 2016-06-08 Element Six Ltd Substrates for semiconductor devices
TWI506788B (zh) * 2012-12-25 2015-11-01 Huga Optotech Inc 場效電晶體
JP2014127707A (ja) * 2012-12-27 2014-07-07 Toshiba Corp 電子部品
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
RU2534442C1 (ru) * 2013-07-04 2014-11-27 Открытое акционерное общество "Научно-производственное предприятие "Пульсар" Способ изготовления мощного свч-транзистора
US9196703B2 (en) * 2013-08-22 2015-11-24 Northrop Grumman Systems Corporation Selective deposition of diamond in thermal vias
DE102015103323A1 (de) 2015-03-06 2016-09-08 Infineon Technologies Austria Ag Verfahren zum Herstellen von Halbleitervorrichtungen durch Bonden einer Halbleiterscheibe auf ein Basissubstrat, zusammengesetzter Wafer und Halbleitervorrichtung
US9406536B1 (en) 2015-06-29 2016-08-02 Hermes-Epitek Corp. Method and system for manufacturing semiconductor epitaxy structure
CN105322007B (zh) * 2015-07-20 2018-12-28 苏州能讯高能半导体有限公司 基于金刚石衬底的氮化物结构、制备方法及半导体器件
US10584412B2 (en) 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
JP6735588B2 (ja) * 2016-03-30 2020-08-05 株式会社サイオクス 窒化物半導体テンプレート、窒化物半導体積層物、窒化物半導体テンプレートの製造方法、および窒化物半導体積層物の製造方法
JP6868389B2 (ja) * 2016-12-27 2021-05-12 住友化学株式会社 半導体基板および電子デバイス
JP6819318B2 (ja) * 2017-01-25 2021-01-27 富士通株式会社 半導体装置、半導体集積回路及び半導体装置の製造方法
US10332820B2 (en) 2017-03-20 2019-06-25 Akash Systems, Inc. Satellite communication transmitter with improved thermal management
CN115594508A (zh) 2017-03-29 2023-01-13 帕里杜斯有限公司（Us） 碳化硅空间形体及形成球状体的方法
CN107039373A (zh) * 2017-05-31 2017-08-11 母凤文 氮化镓器件结构及其制备方法
US10374553B2 (en) 2017-06-15 2019-08-06 Akash Systems, Inc. Microwave transmitter with improved information throughput
US10692752B2 (en) 2017-06-20 2020-06-23 Elta Systems Ltd. Gallium nitride semiconductor structure and process for fabricating thereof
IL253085B (en) * 2017-06-20 2021-06-30 Elta Systems Ltd Gallium nitride semiconductor structure and process for its production
US10128107B1 (en) * 2017-08-31 2018-11-13 Rfhic Corporation Wafers having III-Nitride and diamond layers
CN110828293A (zh) * 2018-08-13 2020-02-21 西安电子科技大学 基于SiC/金刚石复合衬底层的半导体器件及其制备方法
CN110828292A (zh) * 2018-08-13 2020-02-21 西安电子科技大学 基于复合衬底的半导体器件及其制备方法
JP7172556B2 (ja) * 2018-12-19 2022-11-16 株式会社Sumco 多結晶ダイヤモンド自立基板の製造方法
CN109830457B (zh) * 2019-02-15 2021-02-23 长江存储科技有限责任公司 半导体器件及其形成方法
CN112436056B (zh) * 2019-08-26 2024-03-26 联华电子股份有限公司 高电子迁移率晶体管
DE102019122888B4 (de) * 2019-08-27 2024-09-26 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren
CN112786449A (zh) * 2019-11-07 2021-05-11 上海华为技术有限公司 Hemt器件制造方法、hemt器件及射频功率放大器
JP7382804B2 (ja) * 2019-11-22 2023-11-17 三菱電機株式会社 半導体装置、半導体装置の製造方法、及び、電界効果型トランジスタ
US11652146B2 (en) 2020-02-07 2023-05-16 Rfhic Corporation Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers
CN111640828B (zh) * 2020-06-18 2021-08-31 佛山紫熙慧众科技有限公司 AlGaN基紫外LED外延结构
US20230307249A1 (en) * 2020-07-24 2023-09-28 Obshchestvo S Ogranichennoy Otvetstvennostiyu "Vander Tekhnolodzhis" Heteroepitaxial structure with a diamond heat sink
TWI745110B (zh) * 2020-10-06 2021-11-01 環球晶圓股份有限公司 半導體基板及其製造方法
TWI846108B (zh) * 2022-10-24 2024-06-21 國立成功大學 磊晶薄膜的製造方法與磊晶薄膜
US12191227B2 (en) 2020-12-14 2025-01-07 Electronics And Telecommunications Research Institute Heat dissipating substrate comprising diamond and semiconductor integrated device including the same
CN112993042A (zh) * 2021-02-05 2021-06-18 中国电子科技集团公司第十三研究所 倍频单片、GaN太赫兹二极管及其制备方法
WO2023048160A1 (ja) * 2021-09-22 2023-03-30 エア・ウォーター株式会社 半導体基板、半導体デバイス、半導体基板の製造方法、および半導体デバイスの製造方法
CN114530366B (zh) * 2022-01-05 2025-08-26 西安电子科技大学 采用低温脉冲层在金刚石上外延β-Ga2O3薄膜的制备方法及结构
CN114804930A (zh) * 2022-04-18 2022-07-29 苏州博志金钻科技有限责任公司 一种高功率半导体器件散热用单晶碳化硅金属化复合陶瓷片
CN116314274A (zh) * 2023-02-24 2023-06-23 成都功成半导体有限公司 一种具有p沟道的GaN基HEMT器件的制备方法
CN118824845B (zh) * 2024-09-18 2024-11-22 山东大学 一种碳化硅功率器件及其制备方法和应用
CN119113918B (zh) * 2024-09-20 2025-09-16 焦作天宝桓祥机械科技有限公司 一种以碳化硅晶圆制备金刚石晶圆的方法
CN119517182B (zh) * 2024-10-30 2025-11-18 武汉大学深圳研究院 一种改善金刚石衬底异质外延生长氮化镓的仿真方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US654833A (en) * 1898-07-20 1900-07-31 Edward W Jenkins Grain-binder.
US2938136A (en) * 1958-08-26 1960-05-24 Gen Electric Electroluminescent lamp
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5030583A (en) * 1988-12-02 1991-07-09 Advanced Technolgy Materials, Inc. Method of making single crystal semiconductor substrate articles and semiconductor device
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JPH03295267A (ja) 1990-04-13 1991-12-26 Seiko Epson Corp 薄膜装置
JPH04192552A (ja) * 1990-11-27 1992-07-10 Nec Corp 半導体素子用パッケージ
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
DE4323814A1 (de) * 1992-09-25 1994-03-31 Siemens Ag MIS-Feldeffekttransistor
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3295267B2 (ja) 1995-03-24 2002-06-24 株式会社クボタ ディーゼルエンジンの副室式燃焼室
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
US5803967A (en) * 1995-05-31 1998-09-08 Kobe Steel Usa Inc. Method of forming diamond devices having textured and highly oriented diamond layers therein
US6670693B1 (en) * 1996-12-05 2003-12-30 Nathaniel R. Quick Laser synthesized wide-bandgap semiconductor electronic devices and circuits
JP3508356B2 (ja) * 1995-12-25 2004-03-22 松下電器産業株式会社 半導体結晶成長方法及び半導体薄膜
JP3344205B2 (ja) * 1996-03-28 2002-11-11 信越半導体株式会社 シリコンウェーハの製造方法及びシリコンウェーハ
US5872415A (en) * 1996-08-16 1999-02-16 Kobe Steel Usa Inc. Microelectronic structures including semiconductor islands
JP3951324B2 (ja) * 1996-09-03 2007-08-01 住友電気工業株式会社 気相合成ダイヤモンドおよびその製造方法
US6533874B1 (en) * 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
JPH10294452A (ja) * 1997-04-22 1998-11-04 Sony Corp ヘテロ接合電界効果トランジスタ
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
DE19808069A1 (de) 1998-02-26 1999-09-02 Bosch Gmbh Robert Verfahren zum Fixieren einer Rotorwicklung
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
JP2000174166A (ja) * 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd 半導体搭載パッケ―ジ
GB2343091B (en) * 1998-10-19 2004-05-19 Ibm Electronic business card exchange
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6255712B1 (en) 1999-08-14 2001-07-03 International Business Machines Corporation Semi-sacrificial diamond for air dielectric formation
US6448642B1 (en) * 2000-01-27 2002-09-10 William W. Bewley Pressure-bonded heat-sink system
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
AU2001239182A1 (en) * 2000-02-15 2001-08-27 Osram Opto Semiconductors Gmbh Semiconductor component which emits radiation, and method for producing the same
DE10032838B4 (de) * 2000-07-06 2015-08-20 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
JP2002359247A (ja) * 2000-07-10 2002-12-13 Canon Inc 半導体部材、半導体装置およびそれらの製造方法
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
EP1346085B1 (en) * 2000-11-30 2011-10-12 North Carolina State University Method for producing group iii metal nitride based materials
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
JP2002220299A (ja) * 2001-01-19 2002-08-09 Hoya Corp 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6699770B2 (en) * 2001-03-01 2004-03-02 John Tarje Torvik Method of making a hybride substrate having a thin silicon carbide membrane layer
JP2002265296A (ja) 2001-03-09 2002-09-18 Kobe Steel Ltd ダイヤモンド薄膜及びその製造方法
US20030201459A1 (en) * 2001-03-29 2003-10-30 Sheppard Scott Thomas Nitride based transistors on semi-insulating silicon carbide substrates
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6507046B2 (en) 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP2003037074A (ja) 2001-07-26 2003-02-07 Toshiba Corp 半導体装置およびその製造方法
US6770966B2 (en) * 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
US6634770B2 (en) * 2001-08-24 2003-10-21 Densen Cao Light source using semiconductor devices mounted on a heat sink
AU2002337297A1 (en) 2001-10-23 2003-05-06 Cambridge Semiconductor Limited Lateral semiconductor-on-insulator structure and corresponding manufacturing methods
US6670283B2 (en) * 2001-11-20 2003-12-30 International Business Machines Corporation Backside protection films
JP4117535B2 (ja) * 2001-11-30 2008-07-16 信越半導体株式会社 化合物半導体素子
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3812452B2 (ja) * 2002-02-04 2006-08-23 松下電器産業株式会社 ドライエッチング方法
JP4182323B2 (ja) 2002-02-27 2008-11-19 ソニー株式会社 複合基板、基板製造方法
AU2003241057A1 (en) * 2002-06-26 2004-01-19 Cambridge Semiconductor Limited Lateral semiconductor device
CN1467862A (zh) * 2002-07-10 2004-01-14 洲磊科技股份有限公司 具有欧姆接触的半导体装置及其制造方法
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102273305B1 (ko) * 2020-04-23 2021-07-06 알에프에이치아이씨 주식회사 신뢰성을 개선한 다이아몬드 기판 상 질화 갈륨 반도체 구조체 및 이를 제조하는 공정
KR20230080475A (ko) * 2020-10-06 2023-06-07 소이텍 갈륨계 ⅲ-n 합금층의 에피택셜 성장을 위한 기판 제조 방법

Also Published As

Publication number Publication date
JP6227231B2 (ja) 2017-11-08
TW200537564A (en) 2005-11-16
US7033912B2 (en) 2006-04-25
US20110064105A1 (en) 2011-03-17
EP1706895B1 (en) 2019-08-28
JP2007519262A (ja) 2007-07-12
JP5192152B2 (ja) 2013-05-08
WO2005074013A2 (en) 2005-08-11
US9142617B2 (en) 2015-09-22
US20050164482A1 (en) 2005-07-28
EP1706895A2 (en) 2006-10-04
EP3496152B1 (en) 2021-03-31
US20090272984A1 (en) 2009-11-05
US7579626B2 (en) 2009-08-25
US8513672B2 (en) 2013-08-20
EP3496152A1 (en) 2019-06-12
CN1910737A (zh) 2007-02-07
CN100530544C (zh) 2009-08-19
JP2012238861A (ja) 2012-12-06
WO2005074013A3 (en) 2005-11-03
CA2554003A1 (en) 2005-08-11
US20130306990A1 (en) 2013-11-21
US7863624B2 (en) 2011-01-04
US20060138455A1 (en) 2006-06-29

Similar Documents

Publication Publication Date Title
CN100530544C (zh) 在宽带隙材料中制作高功率器件的方法
CA2447058C (en) Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer
US9224596B2 (en) Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers
US20100244101A1 (en) Semiconductor device and method for manufacturing the same
KR20150091706A (ko) 질화물 반도체 소자 및 그 제조 방법
KR20150000753A (ko) 질화물 반도체 소자 및 그 제조 방법
KR20140139346A (ko) 질화물 반도체 소자 및 그 제조 방법
CN114420753B (zh) HEMT器件、基于GaN衬底的HEMT外延结构及制作方法
KR20150000752A (ko) 질화물 반도체 소자 및 그 제조 방법
KR20150091704A (ko) 질화물 반도체 소자 및 그 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060721

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid