CN112436056B - 高电子迁移率晶体管 - Google Patents

高电子迁移率晶体管 Download PDF

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CN112436056B
CN112436056B CN201910788603.5A CN201910788603A CN112436056B CN 112436056 B CN112436056 B CN 112436056B CN 201910788603 A CN201910788603 A CN 201910788603A CN 112436056 B CN112436056 B CN 112436056B
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gallium nitride
nitride layer
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high electron
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CN112436056A (zh
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许祐铭
王裕齐
陈彦兴
杨宗穆
王俞仁
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United Microelectronics Corp
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Abstract

本发明公开一种高电子迁移率晶体管，其包含一氮化铝镓层，一氮化镓层设置于氮化铝镓层下方，一氧化锌层设置于氮化镓层下方，一源极电极和一漏极电极设置于氮化铝镓层之上以及一栅极电极设置于氮化铝镓层上并且位于源极电极与漏极电极。

Description

高电子迁移率晶体管
技术领域
本发明涉及一种高电子迁移率晶体管，特别是涉及一种在通道层下方设置氧化锌层或氧化镁层的高电子迁移率晶体管。
背景技术
III-V族半导体化合物由于其半导体特性而可应用于形成许多种类的集成电路装置，例如高功率场效晶体管、高频晶体管或高电子迁移率晶体管。在高电子迁移率晶体管中，两种不同能带隙(band-gap)的半导体材料接合而于结(junction)形成异质结(heterojunction)为载流子提供通道。
高电子迁移率晶体管由材料本身的材料特性产生二维电子气(two-dimensionalelectron gas,2DEG)，其电子速度及密度均较高，故可用以增加切换速度。然而，两种不同的III-V族半导体接合后，其中晶格大小较大者的压电极化方向会造成二维电子气的电子密度下降。
发明内容
有鉴于此，本发提供一种高电子迁移率晶体管，通过外加氧化锌层或氧化镁层，调整上述III-V族半导体的压电极化方向。
根据本发明的第一优选实施例，一种高电子迁移率晶体管包含一氮化铝镓层，一氮化镓层设置于氮化铝镓层下方，一氧化锌层设置于氮化镓层下方，一源极电极和一漏极电极设置于氮化铝镓层之上以及一栅极电极设置于源极电极与漏极电极之间的氮化铝镓层上。
根据本发明的第二优选实施例，一种高电子迁移率晶体管包含一氮化铝镓层，一氮化镓层设置于氮化铝镓层下方，一氧化镁层设置于氮化镓层下方，一源极电极和一漏极电极设置于氮化铝镓层之上以及一栅极电极设置于源极电极与漏极电极之间的氮化铝镓层上。
为让本发明的上述目的、特征及优点能更明显易懂，下文特举优选实施方式，并配合所附的附图，作详细说明如下。然而如下的优选实施方式与附图仅供参考与说明用，并非用来对本发明加以限制者。
附图说明
图1为本发明的第一优选实施例所绘示的一种高电子迁移率晶体管的示意图；
图2为本发明的第二优选实施例所绘示的一种高电子迁移率晶体管的示意图；
图3为氮化镓层和氮化铝镓层的压电极化方向的示意图；
图4为图1中氮化镓层、氮化铝镓层和氧化锌层的压电极化方向的示意图；
图5为图2中氮化镓层、氮化铝镓层和氧化镁层的压电极化方向的示意图；
图6为本发明的第三优选实施例所绘示的一种高电子迁移率晶体管的示意图；
图7为本发明的第四优选实施例所绘示的一种高电子迁移率晶体管的示意图。
主要元件符号说明
10 基底 12 成核层
14 过渡层 16 超晶格层
18 氧化锌层 20 氮化镓层
22 氮化铝镓 24 P型氮化镓层
26 栅极电极 28 源极电极
30 漏极电极 32 二维电子气
34 氟掺杂区 P1 压电极化方向
P2 压电极化方向 P3 压电极化方向
P4 压电极化方向 P5 压电极化方向
P6 压电极化方向 P7 压电极化方向
P8 压电极化方向 C 压缩应力
C1 压缩应力 C2 压缩应力
T 伸张应力 T1 伸张应力
T2 伸张应力 100 高电子迁移率晶体管
200 高电子迁移率晶体管 300 高电子迁移率晶体管
400 高电子迁移率晶体管
具体实施方式
图1为依据本发明的第一优选实施例所绘示的一种高电子迁移率晶体管。
如图1所示，一种高电子迁移率晶体管100包含一基底10，例如一硅基底。一成核层12设置在硅基底10上，一过渡层14设置在成核层12上，一超晶格层16设置在过渡层14上，一氧化锌(ZnO)层18设置在超晶格(superlattice)层16上，一氮化镓(GaN)层20设置在氧化锌层18上并且氮化镓层20接触氧化锌层18，一氮化铝镓(AlxGa1-xN)层22设置在氮化镓层20上并且氮化铝镓层22接触氮化镓层20，一P型氮化镓层24设置在氮化铝镓层上。一栅极电极26设置在P型氮化镓层24上，一源极电极28和一漏极电极30设置在氮化铝镓层22上并且分别位于P型氮化镓层24的两侧。
氮化镓层20作为通道层(channel layer)，二维电子气32形成在氮化镓层20接近氮化铝镓层22的位置，在高电子迁移率晶体管100开启时，在P型氮化镓层24正下方的位置没有二维电子气32，也就是说高电子迁移率晶体管100为一常关闭(normally-off)晶体管。栅极电极26、漏极电极30和源极电极28可以为钛、铝、氮化钛或是其它导电材料。
基底10可以掺杂有P型掺质，例如硼、铝、镓或铟，成核层12、过渡层14和超晶格层16的功能包含过渡基底10和氧化锌层18之间晶格结构的不匹配(mismatch)，所以成核层12、过渡层14和超晶格层18为可以为多层材料，并且这些多层材料在晶格大小上会由基底10方向朝向氧化锌层18方向上逐渐地改变。此外成核层12、过渡层14和超晶格层16中可以掺杂有P型掺质，P型掺质可以捕捉(trap)由基底10扩散来的电子，避免这些电子影响到二维电子气32。成核层12、过渡层14和超晶格层16的材料包含氮化铝或氮化铝镓。根据本发明的优选实施例，成核层12为氮化铝、过渡层14为氮化铝镓，超晶格层16为氮化铝和氮化铝镓交叠而成。过渡层14中的氮化铝镓和超晶格层16的氮化铝镓其铝原子的掺杂比例可以不同。
根据本发明的优选实施例，氧化锌层18的厚度为氮化镓层20的厚度的5至10倍，但不限于此，氧化锌层18和氮化镓层20之间的厚度比例可以依照不同需求而调整。此外氮化镓层20的晶格成长方向是属于镓极性(Ga-polarity)的氮化镓，氮化镓层20的纤锌矿(Wurzite)六方(hexagonal)结构的[0001]方向垂直于基底10的上表面。
图3绘示的是氮化镓层和氮化铝镓层的压电极化方向的示意图，其中具有相同功能和位置的元件，将延用第一优选实施例中所使用的元件符号。如
图3所示，氮化镓层20的晶格成长方向是属于镓极性的氮化镓，氮化镓层20的纤锌矿六方结构的[0001]方向垂直于氮化镓层20的上表面。在氮化镓层20下方未接触氧化锌层的情况下，当氮化铝镓层22和氮化镓层20两者相叠时，氮化镓层20中会含有压缩应力C，而氮化铝镓层22中会含有伸张应力T，此时在氮化镓层20中的压电极化方向P2和氮化铝镓层22中的压电极化方向P1会相反，详细来说压电极化方向P2会和[0001]方向相同，压电极化方向P1会和[0001]方向相反，压电极化方向P2会造成二维电子气32的电子密度下降。
图4绘示的是图1中氮化镓层、氮化铝镓层和氧化锌层的压电极化方向的示意图，其中具有相同功能和位置的元件，将延用第一优选实施例中所使用的元件符号。如图4所示，氮化镓层20的晶格成长方向是属于镓极性的氮化镓，氮化镓层20的纤锌矿六方结构的[0001]方向垂直于氮化镓层20的上表面。在氮化镓层20下方设置并接触氧化锌层18的情况下，当氮化铝镓层22和氮化镓层20两者相叠时，氮化镓层20中会含有伸张应力T2，氮化铝镓层22中会含有伸张应力T1，氧化锌层18会含有压缩应力C1。此时在氮化镓层20中的压电极化方向P4和氮化铝镓层22中的压电极化方向P3会相同，在氧化锌层18中的压电极化方向P5会和压电极化方向P3相反。详细来说压电极化方向P5会和[0001]方向相同，压电极化方向P3和压电极化方向P4会和[0001]方向相反，换而言的压电极化方向P3和压电极化方向P4都指向氧化锌层18。此时，由于压电极化方向P3和压电极化方向P4相同，二维电子气32的电子密度就可以提升。
图2为依据本发明的第二优选实施例所绘示的一种高电子迁移率晶体管，其中具有相同功能和位置的元件，将延用第一优选实施例中所使用的元件符号。
如图2所示，和第一优选实施例不同之处在于高电子迁移率晶体管200在氮化镓层20下方设置氧化镁(MgO)层118并非氧化锌层，并且氧化镁层118和氮化镓层20接触，氧化镁层118的厚度较佳为氮化镓层20的厚度的5至10倍，但不限于此，氧化镁层118和氮化镓层20之间的厚度比例可以依照不同需求而调整。其它元件都和第一优选实施例相同，在此不再赘述。
图5绘示的是图2中氮化镓层、氮化铝镓层和氧化镁层的压电极化方向的示意图。
如图5所示，氮化镓层20的晶格成长方向是属于镓极性的氮化镓，氮化镓层20的纤锌矿六方结构的[0001]方向垂直于氮化镓层20的上表面。和氧化锌的情况类似，在氮化镓层20下方设置并接触氧化镁层118的情况下，当氮化铝镓层22和氮化镓层20两者相叠时，氮化镓层20中会含有伸张应力T3，氮化铝镓层22中会含有伸张应力T4，氧化镁层118会含有压缩应力C2。此时在氮化镓层20中的压电极化方向P7和氮化铝镓层22中的压电极化方向P6会相同，在氧化镁层118中的压电极化方向P8会和压电极化方向P6相反。详细来说压电极化方向P8会和[0001]方向相同，压电极化方向P6和压电极化方向P7会和[0001]方向相反，换而言之压电极化方向P6和压电极化方向P7都指向氧化镁层118。此时，由于压电极化方向P6和压电极化方向P7相同，二维电子气32的电子密度就可以提升。
图6为依据本发明的第三优选实施例所绘示的一种高电子迁移率晶体管，
图7为依据本发明的第四优选实施例所绘示的一种高电子迁移率晶体管，其中具有相同功能和位置的元件，将延用第一优选实施例中所使用的元件符号。
如图6和图7所示，上述外加氧化锌层或氧化镁层的方式，除了可以使用在具有P型氮化镓层的常闭型高电子迁移率晶体管，还可以使用在具有氟掺杂区34在氮化铝镓层22中的常闭型高电子迁移率晶体管300，也可以使用在具有栅极电极26埋入于氮化铝镓层22中的常闭型高电子迁移率晶体管400。在图6和图7中仅以氧化锌层18示意，但视情况需要氧化锌层18可以替换成氧化镁层118。
本发明特意将氧化锌层设置于氮化镓层下方，并且接触氮化镓层，或者将氧化镁层设置于氮化镓层下方，并且接触氮化镓层，通过氧化锌和氧化镁各自的晶格常数(lattice constant)都较氮化镓的晶格常数大，所以和氧化锌层或氧化镁层所接触的氮化镓层会产生伸张应力，因此相较于图3的情况，氧化锌层或氧化镁层可以改变氮化镓层的压电极化方向，进而增加了二维电子气的电子密度。此外，氧化锌和氧化镁都具有比氮化镓更高的能带隙(bandgap)，因此加了氧化锌层或氧化镁层的高电子迁移率晶体管可以有较高的击穿电压。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (12)

1.一种高电子迁移率晶体管，其特征在于，该高电子迁移率晶体管包含：
氮化铝镓层；
氮化镓层，设置于该氮化铝镓层下方；
氧化锌层，设置于该氮化镓层下方；
源极电极和漏极电极，设置于该氮化铝镓层之上；
栅极电极，设置于该源极电极与该漏极电极之间并且位于该氮化铝镓层上；以及
基底、成核层、过渡层和超晶格层，位于该氧化锌层下方，该基底、该成核层、该过渡层和该超晶格层是由下至上依序堆叠，且该成核层、该过渡层和该超晶格层中均掺杂有P型掺质，
其中该氧化锌层直接接触该氮化镓层。
2.如权利要求1所述的高电子迁移率晶体管，其中该氧化锌层的厚度为该氮化镓层的厚度的5至10倍。
3.如权利要求1所述的高电子迁移率晶体管，其中该氮化镓层中含有伸张应力。
4.如权利要求1所述的高电子迁移率晶体管，其中该氮化铝镓层中含有伸张应力。
5.如权利要求1所述的高电子迁移率晶体管，其中该成核层、该过渡层和该超晶格层包含氮化铝或氮化铝镓。
6.如权利要求1所述的高电子迁移率晶体管，其中该氮化镓层的压电极化方向是朝向该氧化锌层。
7.一种高电子迁移率晶体管，其特征在于，该高电子迁移率晶体管包含：
氮化铝镓层；
氮化镓层，设置于该氮化铝镓层下方；
氧化镁层，设置于该氮化镓层下方并且接触氮化镓层；
源极电极和漏极电极，设置于该氮化铝镓层之上；
栅极电极，设置于该源极电极与该漏极电极之间并且位于该氮化铝镓层上；以及
基底、成核层、过渡层和超晶格层，位于该氧化镁层下方，该基底、该成核层、该过渡层和该超晶格层是由下至上依序堆叠，且该成核层、该过渡层和该超晶格层中均掺杂有P型掺质。
8.如权利要求7所述的高电子迁移率晶体管，其中该氧化镁层的厚度为该氮化镓层的厚度的5至10倍。
9.如权利要求7所述的高电子迁移率晶体管，其中该氮化镓层中含有伸张应力。
10.如权利要求7所述的高电子迁移率晶体管，其中该氮化铝镓层中含有伸张应力。
11.如权利要求7所述的高电子迁移率晶体管，其中该成核层、该过渡层和该超晶格层包含氮化铝或氮化铝镓。
12.如权利要求7所述的高电子迁移率晶体管，其中该氮化镓层的压电极化方向是朝向该氧化镁层。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906765A (zh) * 2004-01-16 2007-01-31 克里公司 具有保护层和低损凹槽的氮化物基晶体管及其制造方法
CN1910737A (zh) * 2004-01-22 2007-02-07 克里公司 金刚石衬底上的碳化硅和相关的器件和方法
JP2016062968A (ja) * 2014-09-16 2016-04-25 富士通株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
WO2009113612A1 (ja) * 2008-03-12 2009-09-17 日本電気株式会社 半導体装置
US9443969B2 (en) 2013-07-23 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having metal diffusion barrier
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906765A (zh) * 2004-01-16 2007-01-31 克里公司 具有保护层和低损凹槽的氮化物基晶体管及其制造方法
CN1910737A (zh) * 2004-01-22 2007-02-07 克里公司 金刚石衬底上的碳化硅和相关的器件和方法
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