CN113826212A - 一种半导体结构的制备方法 - Google Patents
一种半导体结构的制备方法 Download PDFInfo
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- CN113826212A CN113826212A CN201980096456.3A CN201980096456A CN113826212A CN 113826212 A CN113826212 A CN 113826212A CN 201980096456 A CN201980096456 A CN 201980096456A CN 113826212 A CN113826212 A CN 113826212A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 4
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 10
- 229910002601 GaN Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000004913 activation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
本申请公开了一种半导体结构的制备方法，通过选择性外延生长的方法，不需要对n型半导体层以及p型半导体层刻蚀，避免了刻蚀深度无法控制、刻蚀表面损伤等问题；有效减少栅极漏电，保持沟道区域低电阻，抑制电流崩塌，提高器件可靠性、稳定性。
Description
PCT国内申请，说明书已公开。
Claims (9)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/087262 WO2020228018A1 (zh) | 2019-05-16 | 2019-05-16 | 一种半导体结构的制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113826212A true CN113826212A (zh) | 2021-12-21 |
| CN113826212B CN113826212B (zh) | 2023-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980096456.3A Active CN113826212B (zh) | 2019-05-16 | 2019-05-16 | 一种半导体结构的制备方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20220102530A1 (zh) |
| CN (1) | CN113826212B (zh) |
| WO (1) | WO2020228018A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090212325A1 (en) * | 2008-02-25 | 2009-08-27 | Sanken Electric Co., Ltd. | Hetero Field Effect Transistor and Manufacturing Method Thereof |
| JP2011146613A (ja) * | 2010-01-18 | 2011-07-28 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
| US20120211760A1 (en) * | 2011-02-17 | 2012-08-23 | Fujitsu Limited | Semiconductor device and method of manufacturing the same, and power supply apparatus |
| CN103337516A (zh) * | 2013-06-07 | 2013-10-02 | 苏州晶湛半导体有限公司 | 增强型开关器件及其制造方法 |
| US20160211357A1 (en) * | 2015-01-21 | 2016-07-21 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN108346695A (zh) * | 2018-04-13 | 2018-07-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于P-GaN HEMT T型栅高频器件结构及其制备方法和应用 |
| CN108565283A (zh) * | 2018-04-13 | 2018-09-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN基T型栅高频器件及其制备方法和应用 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06267991A (ja) * | 1993-03-12 | 1994-09-22 | Hitachi Ltd | 半導体装置およびその製造方法 |
| TWI345320B (en) * | 2007-12-20 | 2011-07-11 | Univ Nat Central | Method of growing nitride semiconductor material |
| WO2016164765A1 (en) * | 2015-04-08 | 2016-10-13 | University Of Houston System | Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same |
| CN111033752B (zh) * | 2017-08-25 | 2024-02-09 | 苏州晶湛半导体有限公司 | p型半导体的制造方法、增强型器件及其制造方法 |
| CN108962752A (zh) * | 2018-09-04 | 2018-12-07 | 苏州能屋电子科技有限公司 | p型栅增强型HEMT器件及其制作方法 |
| US11515410B2 (en) * | 2020-10-30 | 2022-11-29 | Raytheon Company | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures |
-
2019
- 2019-05-16 CN CN201980096456.3A patent/CN113826212B/zh active Active
- 2019-05-16 WO PCT/CN2019/087262 patent/WO2020228018A1/zh active Application Filing
-
2021
- 2021-11-15 US US17/526,321 patent/US20220102530A1/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090212325A1 (en) * | 2008-02-25 | 2009-08-27 | Sanken Electric Co., Ltd. | Hetero Field Effect Transistor and Manufacturing Method Thereof |
| JP2011146613A (ja) * | 2010-01-18 | 2011-07-28 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
| US20120211760A1 (en) * | 2011-02-17 | 2012-08-23 | Fujitsu Limited | Semiconductor device and method of manufacturing the same, and power supply apparatus |
| CN103337516A (zh) * | 2013-06-07 | 2013-10-02 | 苏州晶湛半导体有限公司 | 增强型开关器件及其制造方法 |
| US20160211357A1 (en) * | 2015-01-21 | 2016-07-21 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN108346695A (zh) * | 2018-04-13 | 2018-07-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于P-GaN HEMT T型栅高频器件结构及其制备方法和应用 |
| CN108565283A (zh) * | 2018-04-13 | 2018-09-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN基T型栅高频器件及其制备方法和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113826212B (zh) | 2023-02-17 |
| US20220102530A1 (en) | 2022-03-31 |
| WO2020228018A1 (zh) | 2020-11-19 |
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