CN113994481A - 一种半导体结构及其制造方法 - Google Patents
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- CN113994481A CN113994481A CN201980097568.0A CN201980097568A CN113994481A CN 113994481 A CN113994481 A CN 113994481A CN 201980097568 A CN201980097568 A CN 201980097568A CN 113994481 A CN113994481 A CN 113994481A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 75
- 230000004888 barrier function Effects 0.000 claims abstract description 57
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 230000006911 nucleation Effects 0.000 claims description 9
- 238000010899 nucleation Methods 0.000 claims description 9
- 229910017109 AlON Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 127
- 229910002601 GaN Inorganic materials 0.000 description 25
- 230000005533 two-dimensional electron gas Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
本发明提供一种半导体结构及其制造方法，解决了现有半导体结构的难以耗尽栅极下方的沟道载流子浓度以实现增强型器件的问题。该半导体结构，包括：依次叠加的沟道层以及势垒层，其中所述势垒层的表面定义有栅极区域；形成于所述栅极区域的多个沟槽，其中所述多个沟槽延伸至所述沟道层内；以及填充在所述多个沟槽中的应力施加材料；其中，所述应力施加材料大于所述沟道层的晶格常数。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/091533 WO2020252623A1 (zh) | 2019-06-17 | 2019-06-17 | 一种半导体结构及其制造方法 |
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| Publication Number | Publication Date |
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| CN113994481A true CN113994481A (zh) | 2022-01-28 |
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| CN201980097568.0A Pending CN113994481A (zh) | 2019-06-17 | 2019-06-17 | 一种半导体结构及其制造方法 |
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| Country | Link |
|---|---|
| US (1) | US20210384341A1 (zh) |
| CN (1) | CN113994481A (zh) |
| WO (1) | WO2020252623A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489911A (zh) * | 2013-09-06 | 2014-01-01 | 华为技术有限公司 | 一种GaN基HEMT器件及其制作方法 |
| KR20150091705A (ko) * | 2014-02-03 | 2015-08-12 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| CN105845723A (zh) * | 2016-05-18 | 2016-08-10 | 中国科学院微电子研究所 | 增强型GaN基高电子迁移率晶体管及其制备方法 |
| CN107919386A (zh) * | 2017-11-21 | 2018-04-17 | 中国科学院微电子研究所 | 基于应变调控的增强型GaN基FinFET结构 |
| CN109037323A (zh) * | 2017-06-09 | 2018-12-18 | 意法半导体股份有限公司 | 具有选择性生成的2deg沟道的常关型hemt晶体管及其制造方法 |
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| US8159004B2 (en) * | 2008-08-26 | 2012-04-17 | Sanken Electric Co., Ltd. | Compound semiconductor device having dopant concentration gradient |
| US20120098599A1 (en) * | 2009-06-30 | 2012-04-26 | Univeristy Of Florida Research Foundation Inc. | Enhancement mode hemt for digital and analog applications |
| KR20110032845A (ko) * | 2009-09-24 | 2011-03-30 | 삼성전자주식회사 | 전력 전자소자 및 그 제조방법 |
| JP5655424B2 (ja) * | 2010-08-09 | 2015-01-21 | サンケン電気株式会社 | 化合物半導体装置 |
| US8124505B1 (en) * | 2010-10-21 | 2012-02-28 | Hrl Laboratories, Llc | Two stage plasma etching method for enhancement mode GaN HFET |
| JP5775321B2 (ja) * | 2011-02-17 | 2015-09-09 | トランスフォーム・ジャパン株式会社 | 半導体装置及びその製造方法、電源装置 |
| US9024357B2 (en) * | 2011-04-15 | 2015-05-05 | Stmicroelectronics S.R.L. | Method for manufacturing a HEMT transistor and corresponding HEMT transistor |
| US9000484B2 (en) * | 2012-05-23 | 2015-04-07 | Hrl Laboratories, Llc | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
| US8680536B2 (en) * | 2012-05-23 | 2014-03-25 | Hrl Laboratories, Llc | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
| US9379195B2 (en) * | 2012-05-23 | 2016-06-28 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
| JP2015050390A (ja) * | 2013-09-03 | 2015-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR102021887B1 (ko) * | 2013-12-09 | 2019-09-17 | 삼성전자주식회사 | 반도체 소자 |
| US9306014B1 (en) * | 2013-12-27 | 2016-04-05 | Power Integrations, Inc. | High-electron-mobility transistors |
| US10566192B2 (en) * | 2014-05-07 | 2020-02-18 | Cambridge Electronics, Inc. | Transistor structure having buried island regions |
| JP6924166B2 (ja) * | 2018-05-14 | 2021-08-25 | 株式会社東芝 | 半導体装置 |
-
2019
- 2019-06-17 CN CN201980097568.0A patent/CN113994481A/zh active Pending
- 2019-06-17 WO PCT/CN2019/091533 patent/WO2020252623A1/zh active Application Filing
-
2021
- 2021-08-23 US US17/409,419 patent/US20210384341A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103489911A (zh) * | 2013-09-06 | 2014-01-01 | 华为技术有限公司 | 一种GaN基HEMT器件及其制作方法 |
| KR20150091705A (ko) * | 2014-02-03 | 2015-08-12 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| CN105845723A (zh) * | 2016-05-18 | 2016-08-10 | 中国科学院微电子研究所 | 增强型GaN基高电子迁移率晶体管及其制备方法 |
| CN109037323A (zh) * | 2017-06-09 | 2018-12-18 | 意法半导体股份有限公司 | 具有选择性生成的2deg沟道的常关型hemt晶体管及其制造方法 |
| CN107919386A (zh) * | 2017-11-21 | 2018-04-17 | 中国科学院微电子研究所 | 基于应变调控的增强型GaN基FinFET结构 |
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| Publication number | Publication date |
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| US20210384341A1 (en) | 2021-12-09 |
| WO2020252623A1 (zh) | 2020-12-24 |
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