JP2007103918A5 - - Google Patents

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Publication number
JP2007103918A5
JP2007103918A5 JP2006221552A JP2006221552A JP2007103918A5 JP 2007103918 A5 JP2007103918 A5 JP 2007103918A5 JP 2006221552 A JP2006221552 A JP 2006221552A JP 2006221552 A JP2006221552 A JP 2006221552A JP 2007103918 A5 JP2007103918 A5 JP 2007103918A5
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JP
Japan
Prior art keywords
amorphous oxide
effect transistor
oxide film
forming
field effect
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JP2006221552A
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English (en)
Japanese (ja)
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JP2007103918A (ja
JP4560502B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2006221552A external-priority patent/JP4560502B2/ja
Priority to JP2006221552A priority Critical patent/JP4560502B2/ja
Priority to KR1020087008191A priority patent/KR101051204B1/ko
Priority to EP14184889.5A priority patent/EP2816607B1/en
Priority to EP06797762A priority patent/EP1915784A1/en
Priority to CN201110356335.3A priority patent/CN102496577B/zh
Priority to US11/993,456 priority patent/US7791074B2/en
Priority to CN2010102032047A priority patent/CN101859711B/zh
Priority to EP11161456.6A priority patent/EP2339639B1/en
Priority to CN2006800325346A priority patent/CN101258607B/zh
Priority to PCT/JP2006/317936 priority patent/WO2007029844A1/en
Publication of JP2007103918A publication Critical patent/JP2007103918A/ja
Publication of JP2007103918A5 publication Critical patent/JP2007103918A5/ja
Priority to US12/833,850 priority patent/US7935582B2/en
Priority to US12/833,855 priority patent/US7956361B2/en
Publication of JP4560502B2 publication Critical patent/JP4560502B2/ja
Application granted granted Critical
Priority to US13/089,703 priority patent/US8154024B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006221552A 2005-09-06 2006-08-15 電界効果型トランジスタ Expired - Fee Related JP4560502B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ
EP11161456.6A EP2339639B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
PCT/JP2006/317936 WO2007029844A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
EP14184889.5A EP2816607B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
EP06797762A EP1915784A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CN201110356335.3A CN102496577B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
US11/993,456 US7791074B2 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CN2010102032047A CN101859711B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
KR1020087008191A KR101051204B1 (ko) 2005-09-06 2006-09-05 아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법
CN2006800325346A CN101258607B (zh) 2005-09-06 2006-09-05 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
US12/833,855 US7956361B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US12/833,850 US7935582B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US13/089,703 US8154024B2 (en) 2005-09-06 2011-04-19 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005258263 2005-09-06
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Related Child Applications (1)

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JP2010108104A Division JP5295170B2 (ja) 2005-09-06 2010-05-10 アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2007103918A JP2007103918A (ja) 2007-04-19
JP2007103918A5 true JP2007103918A5 (enExample) 2009-11-05
JP4560502B2 JP4560502B2 (ja) 2010-10-13

Family

ID=37460356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006221552A Expired - Fee Related JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Country Status (6)

Country Link
US (4) US7791074B2 (enExample)
EP (3) EP2816607B1 (enExample)
JP (1) JP4560502B2 (enExample)
KR (1) KR101051204B1 (enExample)
CN (2) CN102496577B (enExample)
WO (1) WO2007029844A1 (enExample)

Cited By (4)

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US8623698B2 (en) 2009-06-30 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8697488B2 (en) 2009-06-30 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8890781B2 (en) 2009-10-21 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

Families Citing this family (322)

* Cited by examiner, † Cited by third party
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EP1737044B1 (en) * 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
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JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
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JPWO2008139860A1 (ja) * 2007-05-07 2010-07-29 出光興産株式会社 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
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CN105575803B (zh) * 2008-08-15 2018-11-09 株式会社爱发科 场效应晶体管的制造方法
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KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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