KR101051204B1 - 아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법 - Google Patents
아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법 Download PDFInfo
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- KR101051204B1 KR101051204B1 KR1020087008191A KR20087008191A KR101051204B1 KR 101051204 B1 KR101051204 B1 KR 101051204B1 KR 1020087008191 A KR1020087008191 A KR 1020087008191A KR 20087008191 A KR20087008191 A KR 20087008191A KR 101051204 B1 KR101051204 B1 KR 101051204B1
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- oxide
- film
- amorphous oxide
- oxide film
- hydrogen
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 9
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- 238000000034 method Methods 0.000 claims description 63
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- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
- Dram (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005258263 | 2005-09-06 | ||
| JPJP-P-2005-00258263 | 2005-09-06 | ||
| JPJP-P-2006-00221552 | 2006-08-15 | ||
| JP2006221552A JP4560502B2 (ja) | 2005-09-06 | 2006-08-15 | 電界効果型トランジスタ |
| PCT/JP2006/317936 WO2007029844A1 (en) | 2005-09-06 | 2006-09-05 | Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080053355A KR20080053355A (ko) | 2008-06-12 |
| KR101051204B1 true KR101051204B1 (ko) | 2011-07-21 |
Family
ID=37460356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087008191A Active KR101051204B1 (ko) | 2005-09-06 | 2006-09-05 | 아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US7791074B2 (enExample) |
| EP (3) | EP2816607B1 (enExample) |
| JP (1) | JP4560502B2 (enExample) |
| KR (1) | KR101051204B1 (enExample) |
| CN (2) | CN102496577B (enExample) |
| WO (1) | WO2007029844A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190053300A (ko) * | 2010-08-27 | 2019-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
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| CA2585190A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| JP5058469B2 (ja) * | 2005-09-06 | 2012-10-24 | キヤノン株式会社 | スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法 |
| CN101258607B (zh) * | 2005-09-06 | 2011-01-05 | 佳能株式会社 | 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法 |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP5099740B2 (ja) * | 2005-12-19 | 2012-12-19 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
| JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
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| WO2008139860A1 (ja) * | 2007-05-07 | 2008-11-20 | Idemitsu Kosan Co., Ltd. | 半導体薄膜、半導体薄膜の製造方法、および、半導体素子 |
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| US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
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| KR20190053300A (ko) * | 2010-08-27 | 2019-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
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| EP2339639B1 (en) | 2015-03-25 |
| CN101859711A (zh) | 2010-10-13 |
| KR20080053355A (ko) | 2008-06-12 |
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| CN102496577A (zh) | 2012-06-13 |
| US20100276689A1 (en) | 2010-11-04 |
| EP2816607A1 (en) | 2014-12-24 |
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| EP2339639A2 (en) | 2011-06-29 |
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| CN102496577B (zh) | 2015-01-14 |
| CN101859711B (zh) | 2012-07-04 |
| US20110193082A1 (en) | 2011-08-11 |
| WO2007029844A1 (en) | 2007-03-15 |
| EP1915784A1 (en) | 2008-04-30 |
| US7935582B2 (en) | 2011-05-03 |
| JP2007103918A (ja) | 2007-04-19 |
| US20090045397A1 (en) | 2009-02-19 |
| EP2339639A3 (en) | 2012-08-08 |
| JP4560502B2 (ja) | 2010-10-13 |
| US7791074B2 (en) | 2010-09-07 |
| US8154024B2 (en) | 2012-04-10 |
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