CN102496577B - 非晶氧化物膜的制造方法 - Google Patents

非晶氧化物膜的制造方法 Download PDF

Info

Publication number
CN102496577B
CN102496577B CN201110356335.3A CN201110356335A CN102496577B CN 102496577 B CN102496577 B CN 102496577B CN 201110356335 A CN201110356335 A CN 201110356335A CN 102496577 B CN102496577 B CN 102496577B
Authority
CN
China
Prior art keywords
film
hydrogen
amorphous oxide
oxide film
channel layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110356335.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN102496577A (zh
Inventor
岩崎达哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102496577A publication Critical patent/CN102496577A/zh
Application granted granted Critical
Publication of CN102496577B publication Critical patent/CN102496577B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Dram (AREA)
CN201110356335.3A 2005-09-06 2006-09-05 非晶氧化物膜的制造方法 Active CN102496577B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005258263 2005-09-06
JP2005-258263 2005-09-06
JP2006-221552 2006-08-15
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006800325346A Division CN101258607B (zh) 2005-09-06 2006-09-05 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法

Publications (2)

Publication Number Publication Date
CN102496577A CN102496577A (zh) 2012-06-13
CN102496577B true CN102496577B (zh) 2015-01-14

Family

ID=37460356

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110356335.3A Active CN102496577B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
CN2010102032047A Expired - Fee Related CN101859711B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2010102032047A Expired - Fee Related CN101859711B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法

Country Status (6)

Country Link
US (4) US7791074B2 (enExample)
EP (3) EP2816607B1 (enExample)
JP (1) JP4560502B2 (enExample)
KR (1) KR101051204B1 (enExample)
CN (2) CN102496577B (enExample)
WO (1) WO2007029844A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331156B2 (en) 2011-12-15 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Families Citing this family (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1998087B (zh) * 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
CA2585190A1 (en) * 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
CN101258607B (zh) * 2005-09-06 2011-01-05 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
JP5110803B2 (ja) * 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
KR100982395B1 (ko) * 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
WO2008139860A1 (ja) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9434642B2 (en) 2007-05-21 2016-09-06 Corning Incorporated Mechanically flexible and durable substrates
KR101092483B1 (ko) * 2007-05-31 2011-12-13 캐논 가부시끼가이샤 산화물 반도체를 사용한 박막트랜지스터의 제조 방법
CN101910449B (zh) * 2007-12-28 2012-10-31 株式会社爱发科 透明导电膜的成膜方法和成膜装置
JP5219529B2 (ja) 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
KR100963026B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5291105B2 (ja) * 2008-08-15 2013-09-18 株式会社アルバック 電界効果型トランジスタの製造方法
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
KR101612147B1 (ko) 2008-10-23 2016-04-12 이데미쓰 고산 가부시키가이샤 박막 트랜지스터 및 그 제조방법
JP5616012B2 (ja) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
CN103456794B (zh) * 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
EP2515337B1 (en) * 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
KR101659105B1 (ko) * 2008-12-24 2016-09-22 쓰리엠 이노베이티브 프로퍼티즈 컴파니 금속 산화물 반도체 박막 트랜지스터의 안정성 향상
TWI549198B (zh) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102195170B1 (ko) * 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011001715A1 (ja) * 2009-06-29 2011-01-06 シャープ株式会社 酸化物半導体、薄膜トランジスタアレイ基板及びその製造方法、並びに、表示装置
KR101645146B1 (ko) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
JP5478165B2 (ja) * 2009-06-30 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5640478B2 (ja) * 2009-07-09 2014-12-17 株式会社リコー 電界効果型トランジスタの製造方法及び電界効果型トランジスタ
WO2011007677A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR102057221B1 (ko) * 2009-09-16 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
EP3217435A1 (en) * 2009-09-16 2017-09-13 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011037010A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
CN102549757A (zh) 2009-09-30 2012-07-04 佳能株式会社 薄膜晶体管
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102576737B (zh) 2009-10-09 2015-10-21 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101772639B1 (ko) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN116343705B (zh) * 2009-10-16 2025-08-26 株式会社半导体能源研究所 显示设备
KR101943293B1 (ko) 2009-10-16 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
IN2012DN01823A (enExample) 2009-10-16 2015-06-05 Semiconductor Energy Lab
KR101801540B1 (ko) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
CN105702688B (zh) * 2009-10-21 2020-09-08 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR101847656B1 (ko) * 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101892430B1 (ko) * 2009-10-21 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR102162746B1 (ko) 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011048929A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
WO2011052351A1 (en) 2009-10-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) * 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120099657A (ko) * 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011052437A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101752348B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011052385A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20250075719A (ko) * 2009-10-30 2025-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102576172B (zh) * 2009-10-30 2016-01-27 株式会社半导体能源研究所 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101796909B1 (ko) * 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
KR101669476B1 (ko) * 2009-10-30 2016-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101707159B1 (ko) 2009-11-06 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104600074A (zh) * 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR101810254B1 (ko) 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
EP2497011A4 (en) * 2009-11-06 2013-10-02 Semiconductor Energy Lab TOUCH PANEL AND METHOD FOR CONTROLLING TOUCH PANEL
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101727469B1 (ko) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101761432B1 (ko) 2009-11-06 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102771839B1 (ko) * 2009-11-13 2025-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011058882A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
KR102329497B1 (ko) * 2009-11-13 2021-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
JP5656325B2 (ja) * 2009-11-13 2015-01-21 株式会社半導体エネルギー研究所 非線形素子、及び表示装置
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101751560B1 (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062029A1 (en) * 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062043A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011062067A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102026212B1 (ko) * 2009-11-20 2019-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011062075A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101800854B1 (ko) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5657878B2 (ja) * 2009-11-20 2015-01-21 株式会社半導体エネルギー研究所 トランジスタの作製方法
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
CN102668063B (zh) * 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
KR101662359B1 (ko) * 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 셀을 포함하는 반도체 장치
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102008769B1 (ko) 2009-11-27 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR20170091760A (ko) * 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011065210A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
WO2011065230A1 (en) * 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
KR101464776B1 (ko) * 2009-12-01 2014-11-25 엘지디스플레이 주식회사 탄소나노튜브 분산액, 이를 이용한 박막 및 표시장치의 제조방법
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101840623B1 (ko) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
KR101800038B1 (ko) * 2009-12-04 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20170116239A (ko) 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
KR101770976B1 (ko) 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN04871A (enExample) 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
WO2011074393A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101887837B1 (ko) * 2009-12-18 2018-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 센서를 포함하는 표시 장치 및 그 구동 방법
KR102135817B1 (ko) 2009-12-18 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101768433B1 (ko) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
KR20120101716A (ko) * 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2011077925A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
WO2011078373A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
WO2011077946A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
IN2012DN05057A (enExample) 2009-12-28 2015-10-09 Semiconductor Energy Lab
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2519969A4 (en) * 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR101872678B1 (ko) * 2009-12-28 2018-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101848516B1 (ko) * 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101791279B1 (ko) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101698537B1 (ko) * 2010-01-15 2017-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
IN2012DN05920A (enExample) 2010-01-20 2015-09-18 Semiconductor Energy Lab
CN102804603B (zh) * 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
WO2011089835A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011089849A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
CN102714023B (zh) * 2010-01-20 2016-05-04 株式会社半导体能源研究所 液晶显示设备的驱动方法
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102069496B1 (ko) 2010-01-24 2020-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101893904B1 (ko) 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101862823B1 (ko) * 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101791713B1 (ko) * 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치
KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099360A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2011099368A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
KR101811204B1 (ko) 2010-02-12 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP5569780B2 (ja) * 2010-02-18 2014-08-13 国立大学法人東京農工大学 薄膜トランジスタの製造方法
KR101820776B1 (ko) 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR102151495B1 (ko) * 2010-02-23 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN106328085B (zh) 2010-02-26 2020-07-28 株式会社半导体能源研究所 显示设备及其驱动方法
KR20120120458A (ko) 2010-02-26 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101780841B1 (ko) * 2010-02-26 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102114012B1 (ko) * 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011108346A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
DE112011100840T5 (de) * 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
KR20180020327A (ko) 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011114868A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114905A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN105789321B (zh) 2010-03-26 2019-08-20 株式会社半导体能源研究所 半导体装置的制造方法
US20110240462A1 (en) * 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and method for manufacturing semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101904445B1 (ko) * 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101879570B1 (ko) 2010-04-28 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011142371A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664658B2 (en) * 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8928846B2 (en) 2010-05-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having dielectric film over and in contact with wall-like structures
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8779478B2 (en) 2010-06-01 2014-07-15 Sharp Kabushiki Kaisha Thin film transistor
US8779433B2 (en) * 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) * 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101801960B1 (ko) 2010-07-01 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US9473714B2 (en) * 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
WO2012002186A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130090405A (ko) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN106057144B (zh) 2010-07-02 2019-03-12 株式会社半导体能源研究所 液晶显示装置及驱动液晶显示装置的方法
US8614474B2 (en) 2010-07-05 2013-12-24 Sharp Kabushiki Kaisha Thin film transistor memory and display unit including the same
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014790A1 (en) * 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI605549B (zh) * 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5671418B2 (ja) * 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) * 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
KR101928897B1 (ko) * 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029637A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2012256819A (ja) * 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI539453B (zh) * 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
JP5680916B2 (ja) * 2010-09-15 2015-03-04 国立大学法人名古屋大学 電界効果トランジスタ及び電界効果トランジスタの製造方法
KR101856722B1 (ko) * 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
CN103201831B (zh) * 2010-11-05 2015-08-05 株式会社半导体能源研究所 半导体装置
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI535014B (zh) 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
TWI632551B (zh) * 2010-12-03 2018-08-11 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
KR101457833B1 (ko) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8730416B2 (en) * 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5864054B2 (ja) * 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
TWI621121B (zh) 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
US8536571B2 (en) * 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
US9601178B2 (en) * 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8841664B2 (en) * 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5839474B2 (ja) * 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
TWI545652B (zh) * 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
US9142320B2 (en) * 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
WO2012153697A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
WO2012157532A1 (en) 2011-05-16 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9001564B2 (en) * 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
KR101955336B1 (ko) * 2012-03-13 2019-03-07 삼성전자주식회사 광 센싱 트랜지스터, 이의 제조방법 및 이를 채용한 디스플레이 패널
WO2013137014A1 (en) 2012-03-13 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for driving the same
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US20160315196A1 (en) * 2012-04-13 2016-10-27 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
KR102201963B1 (ko) 2012-09-24 2021-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 정보 처리 장치의 구동 방법 및 프로그램
TWI495615B (zh) * 2012-09-28 2015-08-11 Ind Tech Res Inst ｐ型金屬氧化物半導體材料
KR102046996B1 (ko) 2012-10-16 2019-11-21 삼성디스플레이 주식회사 박막 트랜지스터 표시판
TWI618075B (zh) 2012-11-06 2018-03-11 半導體能源研究所股份有限公司 半導體裝置及其驅動方法
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102101863B1 (ko) 2013-01-07 2020-04-21 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 구비하는 표시 장치
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104022044B (zh) * 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9171497B2 (en) * 2013-05-06 2015-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd Method for inspecting packaging effectiveness of OLED panel
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US9806098B2 (en) 2013-12-10 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6252904B2 (ja) * 2014-01-31 2017-12-27 国立研究開発法人物質・材料研究機構 酸化物半導体およびその製法
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
SG11201606647PA (en) 2014-03-14 2016-09-29 Semiconductor Energy Lab Co Ltd Circuit system
JP6659255B2 (ja) * 2014-09-02 2020-03-04 株式会社神戸製鋼所 薄膜トランジスタ
WO2016035503A1 (ja) * 2014-09-02 2016-03-10 株式会社神戸製鋼所 薄膜トランジスタ
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2017072627A1 (ja) * 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
CN105355663B (zh) * 2015-11-30 2018-05-15 武汉大学 一种氢钝化氧化锌基双沟道层薄膜晶体管及其制备方法
WO2017115208A1 (en) 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Device, television system, and electronic device
JP2017175022A (ja) 2016-03-24 2017-09-28 株式会社Ｊｏｌｅｄ 薄膜トランジスタ
US10490116B2 (en) 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
DE112017004148T5 (de) 2016-08-19 2019-05-23 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Steuern der Stromzufuhr in einer Halbleitervorrichtung
CN106711192B (zh) * 2016-10-20 2019-10-11 浙江大学 一种p型CuMSnO非晶氧化物半导体薄膜及其制备方法
CN106711199B (zh) * 2016-10-20 2020-05-19 浙江大学 一种p型CuNSnO非晶氧化物半导体薄膜及其制备方法
CN114115609B (zh) 2016-11-25 2024-09-03 株式会社半导体能源研究所 显示装置及其工作方法
JP7321032B2 (ja) 2019-08-20 2023-08-04 東京エレクトロン株式会社 熱処理方法及び熱処理装置
CN111910155B (zh) * 2020-06-30 2022-05-31 北京航空航天大学合肥创新研究院 一种薄膜材料的改性方法及改性薄膜材料
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN114695561A (zh) * 2022-04-02 2022-07-01 中国科学院微电子研究所 一种平面晶体管及制造方法
CN119517744B (zh) * 2024-11-05 2025-11-14 中国科学院微电子研究所 一种氧化物半导体沟道薄膜的等离子体处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196573A (zh) * 1997-02-06 1998-10-21 日本电气株式会社 可用氢离子改变其阈值电压的场效应晶体管的制造工艺
TW200502589A (en) * 2003-05-20 2005-01-16 Idemitsu Kosan Co Amorphous transparent conductive membrane, sputtering target material for the conductive membrane, amorphous transparent electrode substrate, its production, and color filter for liquid crystal display

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW237562B (enExample) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
DE9406929U1 (de) 1994-04-26 1994-06-16 Roto Frank Ag, 70771 Leinfelden-Echterdingen Dachfenster
US6867432B1 (en) * 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP4536866B2 (ja) * 1999-04-27 2010-09-01 キヤノン株式会社 ナノ構造体及びその製造方法
JP3610293B2 (ja) * 1999-09-22 2005-01-12 キヤノン株式会社 細孔を有する構造体及び前記細孔を有する構造体を用いたデバイス
JP4250834B2 (ja) 1999-10-29 2009-04-08 ソニー株式会社 触媒スパッタリングによる薄膜形成方法
JP4089858B2 (ja) * 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP2003007716A (ja) 2001-06-18 2003-01-10 Sharp Corp 半導体装置およびその製造方法
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US7161173B2 (en) * 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7242039B2 (en) * 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196573A (zh) * 1997-02-06 1998-10-21 日本电气株式会社 可用氢离子改变其阈值电压的场效应晶体管的制造工艺
TW200502589A (en) * 2003-05-20 2005-01-16 Idemitsu Kosan Co Amorphous transparent conductive membrane, sputtering target material for the conductive membrane, amorphous transparent electrode substrate, its production, and color filter for liquid crystal display

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-33172A 2005.02.03 *
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Kenji Nomura et.al.;《NATURE》;20041125;第432卷;第488-492页 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331156B2 (en) 2011-12-15 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
EP2339639B1 (en) 2015-03-25
CN101859711A (zh) 2010-10-13
KR101051204B1 (ko) 2011-07-21
KR20080053355A (ko) 2008-06-12
US7956361B2 (en) 2011-06-07
CN102496577A (zh) 2012-06-13
US20100276689A1 (en) 2010-11-04
EP2816607A1 (en) 2014-12-24
EP2816607B1 (en) 2017-11-15
EP2339639A2 (en) 2011-06-29
US20100279462A1 (en) 2010-11-04
CN101859711B (zh) 2012-07-04
US20110193082A1 (en) 2011-08-11
WO2007029844A1 (en) 2007-03-15
EP1915784A1 (en) 2008-04-30
US7935582B2 (en) 2011-05-03
JP2007103918A (ja) 2007-04-19
US20090045397A1 (en) 2009-02-19
EP2339639A3 (en) 2012-08-08
JP4560502B2 (ja) 2010-10-13
US7791074B2 (en) 2010-09-07
US8154024B2 (en) 2012-04-10

Similar Documents

Publication Publication Date Title
CN102496577B (zh) 非晶氧化物膜的制造方法
CN101258607B (zh) 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
KR101142327B1 (ko) 산화물막을 채널에 사용한 전계 효과형 트랜지스터 및 그 제조 방법
CN101933150B (zh) 使用氧化物半导体的薄膜晶体管和显示器
JP5393058B2 (ja) 電界効果型トランジスタ
JP5213429B2 (ja) 電界効果型トランジスタ
JP5219529B2 (ja) 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
WO2007086291A1 (en) Field effect transistor
Liu et al. High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant