JP4560502B2 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

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Publication number
JP4560502B2
JP4560502B2 JP2006221552A JP2006221552A JP4560502B2 JP 4560502 B2 JP4560502 B2 JP 4560502B2 JP 2006221552 A JP2006221552 A JP 2006221552A JP 2006221552 A JP2006221552 A JP 2006221552A JP 4560502 B2 JP4560502 B2 JP 4560502B2
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JP
Japan
Prior art keywords
film
hydrogen
amorphous oxide
channel layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006221552A
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English (en)
Japanese (ja)
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JP2007103918A (ja
JP2007103918A5 (enExample
Inventor
達哉 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006221552A priority Critical patent/JP4560502B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to US11/993,456 priority patent/US7791074B2/en
Priority to PCT/JP2006/317936 priority patent/WO2007029844A1/en
Priority to EP11161456.6A priority patent/EP2339639B1/en
Priority to EP06797762A priority patent/EP1915784A1/en
Priority to EP14184889.5A priority patent/EP2816607B1/en
Priority to CN2010102032047A priority patent/CN101859711B/zh
Priority to CN201110356335.3A priority patent/CN102496577B/zh
Priority to KR1020087008191A priority patent/KR101051204B1/ko
Priority to CN2006800325346A priority patent/CN101258607B/zh
Publication of JP2007103918A publication Critical patent/JP2007103918A/ja
Publication of JP2007103918A5 publication Critical patent/JP2007103918A5/ja
Priority to US12/833,850 priority patent/US7935582B2/en
Priority to US12/833,855 priority patent/US7956361B2/en
Application granted granted Critical
Publication of JP4560502B2 publication Critical patent/JP4560502B2/ja
Priority to US13/089,703 priority patent/US8154024B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2006221552A 2005-09-06 2006-08-15 電界効果型トランジスタ Expired - Fee Related JP4560502B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ
CN2006800325346A CN101258607B (zh) 2005-09-06 2006-09-05 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
EP11161456.6A EP2339639B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
EP06797762A EP1915784A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
EP14184889.5A EP2816607B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
CN2010102032047A CN101859711B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
CN201110356335.3A CN102496577B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
KR1020087008191A KR101051204B1 (ko) 2005-09-06 2006-09-05 아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법
US11/993,456 US7791074B2 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
PCT/JP2006/317936 WO2007029844A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US12/833,850 US7935582B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US12/833,855 US7956361B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US13/089,703 US8154024B2 (en) 2005-09-06 2011-04-19 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005258263 2005-09-06
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010108104A Division JP5295170B2 (ja) 2005-09-06 2010-05-10 アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2007103918A JP2007103918A (ja) 2007-04-19
JP2007103918A5 JP2007103918A5 (enExample) 2009-11-05
JP4560502B2 true JP4560502B2 (ja) 2010-10-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006221552A Expired - Fee Related JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Country Status (6)

Country Link
US (4) US7791074B2 (enExample)
EP (3) EP2816607B1 (enExample)
JP (1) JP4560502B2 (enExample)
KR (1) KR101051204B1 (enExample)
CN (2) CN101859711B (enExample)
WO (1) WO2007029844A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160114562A (ko) * 2009-02-06 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Families Citing this family (325)

* Cited by examiner, † Cited by third party
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US20070194379A1 (en) * 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
RU2369940C2 (ru) * 2004-11-10 2009-10-10 Кэнон Кабусики Кайся Аморфный оксид и полевой транзистор с его использованием
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
CN101258607B (zh) * 2005-09-06 2011-01-05 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
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CN102165569B (zh) * 2008-08-15 2016-08-03 株式会社爱发科 场效应晶体管的制造方法
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JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
CN102187467A (zh) 2008-10-23 2011-09-14 出光兴产株式会社 薄膜晶体管及其制造方法
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CN101859711A (zh) 2010-10-13

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