JP2010093070A5 - - Google Patents

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JP2010093070A5
JP2010093070A5 JP2008261878A JP2008261878A JP2010093070A5 JP 2010093070 A5 JP2010093070 A5 JP 2010093070A5 JP 2008261878 A JP2008261878 A JP 2008261878A JP 2008261878 A JP2008261878 A JP 2008261878A JP 2010093070 A5 JP2010093070 A5 JP 2010093070A5
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Prior art keywords
effect transistor
oxide semiconductor
nitrogen
oxynitride
channel
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JP2008261878A
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JP2010093070A (ja
JP5430113B2 (ja
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Priority claimed from JP2008261878A external-priority patent/JP5430113B2/ja
Priority to JP2008261878A priority Critical patent/JP5430113B2/ja
Priority to CN2009102044658A priority patent/CN101719514B/zh
Priority to US12/573,381 priority patent/US8164090B2/en
Priority to KR1020090094184A priority patent/KR101224943B1/ko
Priority to EP09012657A priority patent/EP2175493B1/en
Priority to AT09012657T priority patent/ATE555503T1/de
Publication of JP2010093070A publication Critical patent/JP2010093070A/ja
Publication of JP2010093070A5 publication Critical patent/JP2010093070A5/ja
Publication of JP5430113B2 publication Critical patent/JP5430113B2/ja
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JP2008261878A 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP5430113B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法
CN2009102044658A CN101719514B (zh) 2008-10-08 2009-09-29 场效应晶体管及其制造工艺
US12/573,381 US8164090B2 (en) 2008-10-08 2009-10-05 Field effect transistor and process for production thereof
KR1020090094184A KR101224943B1 (ko) 2008-10-08 2009-10-05 전계효과형 트랜지스터 및 그 제조방법
EP09012657A EP2175493B1 (en) 2008-10-08 2009-10-06 Field effect transistor and process for production thereof
AT09012657T ATE555503T1 (de) 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung

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JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

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JP2010093070A JP2010093070A (ja) 2010-04-22
JP2010093070A5 true JP2010093070A5 (enExample) 2011-11-24
JP5430113B2 JP5430113B2 (ja) 2014-02-26

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US (1) US8164090B2 (enExample)
EP (1) EP2175493B1 (enExample)
JP (1) JP5430113B2 (enExample)
KR (1) KR101224943B1 (enExample)
CN (1) CN101719514B (enExample)
AT (1) ATE555503T1 (enExample)

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JP5016831B2 (ja) 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP2007250982A (ja) 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
JP2008112909A (ja) 2006-10-31 2008-05-15 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP2008276212A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor

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