CN101719514B - 场效应晶体管及其制造工艺 - Google Patents
场效应晶体管及其制造工艺 Download PDFInfo
- Publication number
- CN101719514B CN101719514B CN2009102044658A CN200910204465A CN101719514B CN 101719514 B CN101719514 B CN 101719514B CN 2009102044658 A CN2009102044658 A CN 2009102044658A CN 200910204465 A CN200910204465 A CN 200910204465A CN 101719514 B CN101719514 B CN 101719514B
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- Prior art keywords
- film
- nitrogen
- electrode
- oxide
- effect transistor
- Prior art date
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- Expired - Fee Related
Links
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- 238000000034 method Methods 0.000 title description 11
- 230000008569 process Effects 0.000 title description 4
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- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 79
- 229910052757 nitrogen Inorganic materials 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000011701 zinc Substances 0.000 claims description 17
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- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 239000010408 film Substances 0.000 description 145
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- 239000011787 zinc oxide Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 229910007611 Zn—In—O Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 11
- -1 nitrogen molecular ion Chemical class 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910007541 Zn O Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
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- 238000004876 x-ray fluorescence Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
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- 239000008246 gaseous mixture Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
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- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical group [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229920006254 polymer film Polymers 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
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- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-261878 | 2008-10-08 | ||
| JP2008261878A JP5430113B2 (ja) | 2008-10-08 | 2008-10-08 | 電界効果型トランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101719514A CN101719514A (zh) | 2010-06-02 |
| CN101719514B true CN101719514B (zh) | 2012-06-27 |
Family
ID=41445710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102044658A Expired - Fee Related CN101719514B (zh) | 2008-10-08 | 2009-09-29 | 场效应晶体管及其制造工艺 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8164090B2 (enExample) |
| EP (1) | EP2175493B1 (enExample) |
| JP (1) | JP5430113B2 (enExample) |
| KR (1) | KR101224943B1 (enExample) |
| CN (1) | CN101719514B (enExample) |
| AT (1) | ATE555503T1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8883556B2 (en) | 2010-12-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8927982B2 (en) | 2011-03-18 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device |
Families Citing this family (109)
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|---|---|---|---|---|
| US8704217B2 (en) * | 2008-01-17 | 2014-04-22 | Idemitsu Kosan Co., Ltd. | Field effect transistor, semiconductor device and semiconductor device manufacturing method |
| WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
| KR102089200B1 (ko) | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
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| WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| KR20250150667A (ko) | 2010-02-26 | 2025-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101877377B1 (ko) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8883556B2 (en) | 2010-12-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8927982B2 (en) | 2011-03-18 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device |
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| EP2175493A1 (en) | 2010-04-14 |
| KR20100039806A (ko) | 2010-04-16 |
| ATE555503T1 (de) | 2012-05-15 |
| US8164090B2 (en) | 2012-04-24 |
| CN101719514A (zh) | 2010-06-02 |
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| EP2175493B1 (en) | 2012-04-25 |
| KR101224943B1 (ko) | 2013-01-22 |
| US20100084655A1 (en) | 2010-04-08 |
| JP5430113B2 (ja) | 2014-02-26 |
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