ATE555503T1 - Feldeffekttransistor und verfahren zu seiner herstellung - Google Patents

Feldeffekttransistor und verfahren zu seiner herstellung

Info

Publication number
ATE555503T1
ATE555503T1 AT09012657T AT09012657T ATE555503T1 AT E555503 T1 ATE555503 T1 AT E555503T1 AT 09012657 T AT09012657 T AT 09012657T AT 09012657 T AT09012657 T AT 09012657T AT E555503 T1 ATE555503 T1 AT E555503T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
production
channel
electrode
Prior art date
Application number
AT09012657T
Other languages
German (de)
English (en)
Inventor
Tatsuya Iwasaki
Naho Itagaki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE555503T1 publication Critical patent/ATE555503T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT09012657T 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung ATE555503T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

Publications (1)

Publication Number Publication Date
ATE555503T1 true ATE555503T1 (de) 2012-05-15

Family

ID=41445710

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09012657T ATE555503T1 (de) 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (1) US8164090B2 (enExample)
EP (1) EP2175493B1 (enExample)
JP (1) JP5430113B2 (enExample)
KR (1) KR101224943B1 (enExample)
CN (1) CN101719514B (enExample)
AT (1) ATE555503T1 (enExample)

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CN110137355B (zh) * 2019-05-15 2021-05-25 华东师范大学 一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法
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US8164090B2 (en) 2012-04-24
KR20100039806A (ko) 2010-04-16
KR101224943B1 (ko) 2013-01-22
CN101719514A (zh) 2010-06-02
CN101719514B (zh) 2012-06-27
EP2175493B1 (en) 2012-04-25
JP5430113B2 (ja) 2014-02-26
JP2010093070A (ja) 2010-04-22

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