JP5430113B2 - 電界効果型トランジスタ及びその製造方法 - Google Patents

電界効果型トランジスタ及びその製造方法 Download PDF

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Publication number
JP5430113B2
JP5430113B2 JP2008261878A JP2008261878A JP5430113B2 JP 5430113 B2 JP5430113 B2 JP 5430113B2 JP 2008261878 A JP2008261878 A JP 2008261878A JP 2008261878 A JP2008261878 A JP 2008261878A JP 5430113 B2 JP5430113 B2 JP 5430113B2
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oxynitride
electrode
film
channel
oxide semiconductor
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Expired - Fee Related
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JP2008261878A
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Japanese (ja)
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JP2010093070A5 (enExample
JP2010093070A (ja
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達哉 岩崎
奈穂 板垣
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Canon Inc
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Canon Inc
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Priority to JP2008261878A priority Critical patent/JP5430113B2/ja
Priority to CN2009102044658A priority patent/CN101719514B/zh
Priority to KR1020090094184A priority patent/KR101224943B1/ko
Priority to US12/573,381 priority patent/US8164090B2/en
Priority to EP09012657A priority patent/EP2175493B1/en
Priority to AT09012657T priority patent/ATE555503T1/de
Publication of JP2010093070A publication Critical patent/JP2010093070A/ja
Publication of JP2010093070A5 publication Critical patent/JP2010093070A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008261878A 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP5430113B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法
CN2009102044658A CN101719514B (zh) 2008-10-08 2009-09-29 场效应晶体管及其制造工艺
US12/573,381 US8164090B2 (en) 2008-10-08 2009-10-05 Field effect transistor and process for production thereof
KR1020090094184A KR101224943B1 (ko) 2008-10-08 2009-10-05 전계효과형 트랜지스터 및 그 제조방법
EP09012657A EP2175493B1 (en) 2008-10-08 2009-10-06 Field effect transistor and process for production thereof
AT09012657T ATE555503T1 (de) 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung

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Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

Publications (3)

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JP2010093070A JP2010093070A (ja) 2010-04-22
JP2010093070A5 JP2010093070A5 (enExample) 2011-11-24
JP5430113B2 true JP5430113B2 (ja) 2014-02-26

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US (1) US8164090B2 (enExample)
EP (1) EP2175493B1 (enExample)
JP (1) JP5430113B2 (enExample)
KR (1) KR101224943B1 (enExample)
CN (1) CN101719514B (enExample)
AT (1) ATE555503T1 (enExample)

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