JP5430113B2 - 電界効果型トランジスタ及びその製造方法 - Google Patents

電界効果型トランジスタ及びその製造方法 Download PDF

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Publication number
JP5430113B2
JP5430113B2 JP2008261878A JP2008261878A JP5430113B2 JP 5430113 B2 JP5430113 B2 JP 5430113B2 JP 2008261878 A JP2008261878 A JP 2008261878A JP 2008261878 A JP2008261878 A JP 2008261878A JP 5430113 B2 JP5430113 B2 JP 5430113B2
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oxynitride
electrode
film
channel
oxide semiconductor
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Expired - Fee Related
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JP2008261878A
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Japanese (ja)
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JP2010093070A (ja
JP2010093070A5 (enExample
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達哉 岩崎
奈穂 板垣
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Canon Inc
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Canon Inc
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Priority to JP2008261878A priority Critical patent/JP5430113B2/ja
Priority to CN2009102044658A priority patent/CN101719514B/zh
Priority to US12/573,381 priority patent/US8164090B2/en
Priority to KR1020090094184A priority patent/KR101224943B1/ko
Priority to AT09012657T priority patent/ATE555503T1/de
Priority to EP09012657A priority patent/EP2175493B1/en
Publication of JP2010093070A publication Critical patent/JP2010093070A/ja
Publication of JP2010093070A5 publication Critical patent/JP2010093070A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008261878A 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP5430113B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法
CN2009102044658A CN101719514B (zh) 2008-10-08 2009-09-29 场效应晶体管及其制造工艺
KR1020090094184A KR101224943B1 (ko) 2008-10-08 2009-10-05 전계효과형 트랜지스터 및 그 제조방법
US12/573,381 US8164090B2 (en) 2008-10-08 2009-10-05 Field effect transistor and process for production thereof
AT09012657T ATE555503T1 (de) 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung
EP09012657A EP2175493B1 (en) 2008-10-08 2009-10-06 Field effect transistor and process for production thereof

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Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

Publications (3)

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JP2010093070A JP2010093070A (ja) 2010-04-22
JP2010093070A5 JP2010093070A5 (enExample) 2011-11-24
JP5430113B2 true JP5430113B2 (ja) 2014-02-26

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US (1) US8164090B2 (enExample)
EP (1) EP2175493B1 (enExample)
JP (1) JP5430113B2 (enExample)
KR (1) KR101224943B1 (enExample)
CN (1) CN101719514B (enExample)
AT (1) ATE555503T1 (enExample)

Families Citing this family (111)

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Publication number Priority date Publication date Assignee Title
WO2009091013A1 (ja) * 2008-01-17 2009-07-23 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ、半導体装置及びその製造方法
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
KR101396015B1 (ko) * 2009-11-28 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101872678B1 (ko) * 2009-12-28 2018-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR102047354B1 (ko) 2010-02-26 2019-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130055607A (ko) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9336739B2 (en) * 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
KR101145916B1 (ko) * 2010-09-15 2012-05-15 경희대학교 산학협력단 플렉시블 다층 투명 전극의 제조 방법
TWI565079B (zh) * 2010-10-20 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
CN102468162B (zh) * 2010-10-29 2014-03-12 中芯国际集成电路制造(北京)有限公司 Nmos晶体管的制作方法
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI654764B (zh) * 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI525818B (zh) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
US8629496B2 (en) * 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816425B2 (en) * 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
WO2012090794A1 (ja) * 2010-12-27 2012-07-05 シャープ株式会社 半導体装置およびその製造方法
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012090974A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012090973A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5975635B2 (ja) * 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
KR101800888B1 (ko) * 2010-12-29 2017-11-24 엘지디스플레이 주식회사 산화물 반도체를 포함한 박막 트랜지스터 기판
TWI416737B (zh) 2010-12-30 2013-11-21 Au Optronics Corp 薄膜電晶體及其製造方法
JP5982125B2 (ja) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI535032B (zh) * 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8575678B2 (en) * 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
TWI787452B (zh) * 2011-01-26 2022-12-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102314A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US8541781B2 (en) * 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101995682B1 (ko) 2011-03-18 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
TWI545652B (zh) * 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9960278B2 (en) * 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
TWI532822B (zh) 2011-04-29 2016-05-11 半導體能源研究所股份有限公司 利用磷光之發光裝置，電子裝置及照明裝置
KR102025266B1 (ko) 2011-04-29 2019-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 금속 착체, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
JP6009226B2 (ja) * 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6104522B2 (ja) * 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US9001564B2 (en) * 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
WO2013005380A1 (en) 2011-07-01 2013-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8643008B2 (en) * 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8802493B2 (en) * 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) * 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
WO2013054823A1 (en) * 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130055521A (ko) * 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
US9076871B2 (en) * 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013147490A (ja) 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd イリジウム錯体、発光素子、発光装置、電子機器、及び照明装置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI569446B (zh) * 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6088142B2 (ja) * 2012-01-18 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220526B2 (ja) * 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6100071B2 (ja) * 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8921549B2 (en) 2012-06-01 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device
JP2014027263A (ja) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102099445B1 (ko) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102354212B1 (ko) * 2012-08-03 2022-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI575663B (zh) 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
KR102484987B1 (ko) 2012-09-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN104885230B (zh) 2012-12-25 2018-02-23 株式会社半导体能源研究所 半导体装置
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2014148872A1 (ko) * 2013-03-21 2014-09-25 한양대학교 산학협력단 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, 및 이들의 제조방법
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6217196B2 (ja) * 2013-07-11 2017-10-25 三菱電機株式会社 半導体材料、薄膜トランジスタ、および薄膜トランジスタの製造方法
JP2015065202A (ja) * 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
CN103500710B (zh) * 2013-10-11 2015-11-25 京东方科技集团股份有限公司 一种薄膜晶体管制作方法、薄膜晶体管及显示设备
KR102227637B1 (ko) 2013-11-07 2021-03-16 삼성디스플레이 주식회사 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112014006046T5 (de) 2013-12-27 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung
CN103715267A (zh) * 2013-12-30 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管、tft阵列基板及其制造方法和显示装置
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015162633A (ja) * 2014-02-28 2015-09-07 株式会社東芝 半導体装置
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
CN104167448B (zh) * 2014-08-05 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
US20160225915A1 (en) * 2015-01-30 2016-08-04 Cindy X. Qiu Metal oxynitride transistor devices
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6697299B2 (ja) 2015-04-01 2020-05-20 株式会社半導体エネルギー研究所 有機金属錯体、発光素子、発光装置、電子機器、および照明装置
CN105161523B (zh) * 2015-08-13 2018-09-25 京东方科技集团股份有限公司 一种电极、薄膜晶体管、阵列基板及显示设备
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105977304B (zh) * 2016-05-31 2019-01-11 京东方科技集团股份有限公司 晶体管、其制造方法、阵列基板、显示面板及显示装置
JP6411556B2 (ja) * 2017-02-03 2018-10-24 株式会社半導体エネルギー研究所 半導体メモリ装置
CN107731929B (zh) * 2017-09-28 2019-12-13 信利（惠州）智能显示有限公司 薄膜晶体管的制作方法
JP6896020B2 (ja) * 2017-11-14 2021-06-30 株式会社半導体エネルギー研究所 半導体装置
CN110137355B (zh) * 2019-05-15 2021-05-25 华东师范大学 一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法
JP7209043B2 (ja) * 2019-06-12 2023-01-19 株式会社半導体エネルギー研究所 半導体装置
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN114152857A (zh) * 2021-12-07 2022-03-08 华东师范大学 一种二维材料场效应晶体管失效样品的制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3423896B2 (ja) * 1999-03-25 2003-07-07 科学技術振興事業団 半導体デバイス
JP2003060576A (ja) 2001-08-22 2003-02-28 Nec Corp 偏波スクランブラユニット及びこれを用いた多中継伝送システム
TWI221340B (en) * 2003-05-30 2004-09-21 Ind Tech Res Inst Thin film transistor and method for fabricating thereof
CN1998087B (zh) * 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
CN102945857B (zh) * 2004-11-10 2015-06-03 佳能株式会社 无定形氧化物和场效应晶体管
KR100953596B1 (ko) * 2004-11-10 2010-04-21 캐논 가부시끼가이샤 발광장치
KR101152128B1 (ko) * 2005-07-04 2012-07-02 삼성전자주식회사 액정 표시 장치 및 그 구동 방법
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101112652B1 (ko) * 2005-11-15 2012-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기
JP5250929B2 (ja) 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
JP2007220818A (ja) * 2006-02-15 2007-08-30 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタ及びその製法
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
JP2008112909A (ja) 2006-10-31 2008-05-15 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP2008276212A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体

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