KR101224943B1 - 전계효과형 트랜지스터 및 그 제조방법 - Google Patents

전계효과형 트랜지스터 및 그 제조방법 Download PDF

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KR101224943B1
KR101224943B1 KR1020090094184A KR20090094184A KR101224943B1 KR 101224943 B1 KR101224943 B1 KR 101224943B1 KR 1020090094184 A KR1020090094184 A KR 1020090094184A KR 20090094184 A KR20090094184 A KR 20090094184A KR 101224943 B1 KR101224943 B1 KR 101224943B1
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electrode
oxynitride
film
nitrogen
oxide semiconductor
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KR20100039806A (ko
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타쓰야 이와사키
나호 이타가키
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020090094184A 2008-10-08 2009-10-05 전계효과형 트랜지스터 및 그 제조방법 Expired - Fee Related KR101224943B1 (ko)

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JPJP-P-2008-261878 2008-10-08
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

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KR20100039806A KR20100039806A (ko) 2010-04-16
KR101224943B1 true KR101224943B1 (ko) 2013-01-22

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US (1) US8164090B2 (enExample)
EP (1) EP2175493B1 (enExample)
JP (1) JP5430113B2 (enExample)
KR (1) KR101224943B1 (enExample)
CN (1) CN101719514B (enExample)
AT (1) ATE555503T1 (enExample)

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