JP2006111727A - 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 - Google Patents
接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 Download PDFInfo
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- JP2006111727A JP2006111727A JP2004300541A JP2004300541A JP2006111727A JP 2006111727 A JP2006111727 A JP 2006111727A JP 2004300541 A JP2004300541 A JP 2004300541A JP 2004300541 A JP2004300541 A JP 2004300541A JP 2006111727 A JP2006111727 A JP 2006111727A
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Abstract
【解決手段】 剥離基材10、基材フィルム14、及び、剥離基材10と基材フィルム14との間に配置される第1の粘接着層12を備える接着シートであって、剥離基材10には、第1の粘接着層12側の面から切り込み部が環状に形成されており、第1の粘接着層12は、剥離基材10における上記切り込み部の内側の面全体を覆うように積層されており、上記切り込み部の切り込み深さは、剥離基材10の厚さ未満であり、且つ、25μm以下であることを特徴とする接着シート。
【選択図】 図1
Description
0<(d/a)≦0.7 (1)
0<(d/a)≦0.7 (1)
(第1実施形態)
図1は、本発明の接着シートの第1実施形態を示す平面図であり、図2は、図1に示す接着シート1を図1のA1−A1線に沿って切断した場合の模式断面図である。図1及び図2に示すように、接着シート1は、剥離基材10と、第1の粘接着層12と、基材フィルム14とが順次積層された構成を有している。また、第1の粘接着層12及び基材フィルム14からなる第1の積層体20は、所定の平面形状に切断されており、剥離基材10上に部分的に積層されている。更に、剥離基材10には、第1の積層体20の平面形状の周縁に沿って、第1の粘接着層12側の面から剥離基材10の厚み方向に切り込み部Dが環状に形成されている。第1の積層体20は、剥離基材10における切り込み部Dの内側の面全体を覆うように積層されている。
0<(d/a)≦0.7 (1)
図4は、本発明の接着シートの第2実施形態を示す平面図であり、図5は、図4に示す接着シート2を図4のA2−A2線に沿って切断した場合の模式断面図である。図4及び図5に示すように、接着シート2は、剥離基材10と、第1の粘接着層12と、第1の粘接着層12の周縁部と剥離基材10との間に配置される第2の粘接着層16と、基材フィルム14とを備える構成を有している。また、第1の粘接着層12及び基材フィルム14は所定の平面形状に切断されており、剥離基材10上に部分的に積層されている。更に、第2の粘接着層16も所定の平面形状に切断されており、基材フィルム14、第1の粘接着層12及び第2の粘接着層16からなる第2の積層体22を半導体ウェハ及びウェハリングに貼り付ける際に、ウェハリングに貼り付けるべき位置に配置されている。そして、剥離基材10には、第2の積層体22の平面形状に沿って、第1の粘接着層12及び第2の粘接着層16側の面から剥離基材10の厚み方向に切り込み部Dが環状に形成されている。
図6は、本発明の接着シートの第3実施形態を示す平面図であり、図7は、図6に示す接着シート3を図6のA3−A3線に沿って切断した場合の模式断面図である。図6及び図7に示すように、接着シート3は、剥離基材10と、第1の粘接着層12と、第1の粘接着層12の周縁部と剥離基材10との間に配置される第2の粘接着層16と、第2の粘接着層16と基材フィルム14との間に配置される中間層18と、基材フィルム14とを備える構成を有している。また、第1の粘接着層12及び基材フィルム14は所定の平面形状に切断されており、剥離基材10上に部分的に積層されている。更に、第2の粘接着層16及び中間層18も所定の平面形状に切断されており、これらは、基材フィルム14、第1の粘接着層12、中間層18及び第2の粘接着層16からなる第3の積層体24を半導体ウェハ及びウェハリングに貼り付ける際に、ウェハリングに貼り付けるべき位置に配置されている。そして、剥離基材10には、第2の積層体22の平面形状に沿って、第1の粘接着層12及び第2の粘接着層16側の面から剥離基材10の厚み方向に切り込み部Dが環状に形成されている。
(第4実施形態)
上記第1実施形態に係る接着シート1を製造するための、第4実施形態に係る接着シート1の製造方法について説明する。
0<(d/a)≦0.7 (1)
上記第2実施形態に係る接着シート2を製造するための、第5実施形態に係る接着シート2の製造方法について説明する。
上記第3実施形態に係る接着シート3を製造するための、第6実施形態に係る接着シート3の製造方法について説明する。
以上説明した接着シートを用いて半導体装置を製造する方法について、図11及び12を用いて説明する。なお、以下の説明においては、接着シートとして上記第2実施形態に係る接着シート2を用いる場合について説明する。
図13は、上述した半導体装置の製造方法により製造される本発明の半導体素子の一実施形態を示す模式断面図である。
Claims (21)
- 剥離基材、基材フィルム、及び、前記剥離基材と前記基材フィルムとの間に配置される第1の粘接着層を備える接着シートであって、
前記剥離基材には、前記第1の粘接着層側の面から切り込み部が環状に形成されており、
前記第1の粘接着層は、前記剥離基材における前記切り込み部の内側の面全体を覆うように積層されており、
前記切り込み部の切り込み深さは、前記剥離基材の厚さ未満であり、且つ、25μm以下であることを特徴とする接着シート。 - 前記剥離基材の厚さをa(μm)、前記切り込み部の切り込み深さをd(μm)として、(d/a)の値が下記式(1)の条件を満たしていることを特徴とする請求項1記載の接着シート。
0<(d/a)≦0.7 (1) - 前記第1の粘接着層は、前記剥離基材を剥離した後に前記第1の粘接着層を貼り付けるべき被着体の平面形状に合致する平面形状を有していることを特徴とする請求項1又は2記載の接着シート。
- 前記第1の粘接着層は、前記剥離基材を剥離した後に前記第1の粘接着層を貼り付けるべき被着体及び前記基材フィルムに対して室温で粘着性を有することを特徴とする請求項1〜3のうちのいずれか一項に記載の接着シート。
- 前記第1の粘接着層は、高エネルギー線の照射により前記基材フィルムに対する粘着力が低下することを特徴とする請求項1〜4のうちのいずれか一項に記載の接着シート。
- 前記第1の粘接着層の周縁部の少なくとも一部と前記剥離基材との間に配置される第2の粘接着層を更に備えることを特徴とする請求項1〜5のうちのいずれか一項に記載の接着シート。
- 前記第2の粘接着層は、前記剥離基材を剥離した後に前記第2の粘接着層を貼り付けるべき被着体及び前記第1の粘接着層に対して室温で粘着性を有することを特徴とする請求項6記載の接着シート。
- 前記第1の粘接着層の前記周縁部の少なくとも一部と前記第2の粘接着層との間に配置される中間層を更に備えることを特徴とする請求項6又は7記載の接着シート。
- 剥離基材、基材フィルム、及び、前記剥離基材と前記基材フィルムとの間に配置される第1の粘接着層を備える接着シートの製造方法であって、
前記剥離基材上に、前記第1の粘接着層及び前記基材フィルムを積層する第1の積層工程と、
前記第1の積層工程の後に、前記基材フィルムの前記第1の粘接着層側と反対側の面から前記剥離基材に達するまで切り込みを入れ、前記剥離基材に切り込み部を環状に形成する第1の切断工程と、
を含み、
前記第1の切断工程において、前記切り込み部の切り込み深さが、前記剥離基材の厚さ未満であり、且つ、25μm以下となるように切り込みを入れることを特徴とする接着シートの製造方法。 - 前記第1の切断工程において、前記剥離基材の厚さをa(μm)、前記切り込み部の切り込み深さをd(μm)として、(d/a)の値が下記式(1)の条件を満たすように切り込みを入れることを特徴とする請求項9記載の接着シートの製造方法。
0<(d/a)≦0.7 (1) - 剥離基材、基材フィルム、前記剥離基材と前記基材フィルムとの間に配置される第1の粘接着層、及び、前記剥離基材と前記第1の粘接着層との間に配置される第2の粘接着層を備える接着シートの製造方法であって、
前記剥離基材上に部分的に前記第2の粘接着層を積層する第2の積層工程と、
前記剥離基材及び前記第2の粘接着層上に、前記第1の粘接着層及び前記基材フィルムを積層する第3の積層工程と、
前記基材フィルムの前記第1の粘接着層側と反対側の面から前記剥離基材に達するまで切り込みを入れ、前記剥離基材に切り込み部を環状に形成する第2の切断工程と、
を含み、
前記第2の切断工程において、前記切り込み部の内側の領域内で前記第1の粘接着層の周縁部の少なくとも一部と前記剥離基材との間に前記第2の粘接着層が配置された状態となるように切断を行うとともに、前記切り込み部の切り込み深さが、前記剥離基材の厚さ未満であり、且つ、25μm以下となるように切り込みを入れることを特徴とする接着シートの製造方法。 - 前記第2の切断工程において、前記剥離基材の厚さをa(μm)、前記切り込み部の切り込み深さをd(μm)として、(d/a)の値が下記式(1)の条件を満たすように切り込みを入れることを特徴とする請求項11記載の接着シートの製造方法。
0<(d/a)≦0.7 (1) - 剥離基材、基材フィルム、前記剥離基材と前記基材フィルムとの間に配置される第1の粘接着層、前記剥離基材と前記第1の粘接着層との間に配置される第2の粘接着層、及び、前記第1の粘接着層と前記第2の粘接着層との間に配置される中間層を備える接着シートの製造方法であって、
前記剥離基材上に部分的に前記第2の粘接着層及び前記中間層を積層する第4の積層工程と、
前記剥離基材及び前記中間層上に、前記第1の粘接着層及び前記基材フィルムを積層する第5の積層工程と、
前記基材フィルムの前記第1の粘接着層側と反対側の面から前記剥離基材に達するまで切り込みを入れ、前記剥離基材に切り込み部を環状に形成する第3の切断工程と、
を含み、
前記第3の切断工程において、前記切り込み部の内側の領域内で前記第1の粘接着層の周縁部の少なくとも一部と前記剥離基材との間に前記第2の粘接着層及び前記中間層が配置された状態となるように切断を行うとともに、前記切り込み部の切り込み深さが、前記剥離基材の厚さ未満であり、且つ、25μm以下となるように切り込みを入れることを特徴とする接着シートの製造方法。 - 前記第3の切断工程において、前記剥離基材の厚さをa(μm)、前記切り込み部の切り込み深さをd(μm)として、(d/a)の値が下記式(1)の条件を満たすように切り込みを入れることを特徴とする請求項13記載の接着シートの製造方法。
0<(d/a)≦0.7 (1) - 請求項1〜5のうちのいずれか一項に記載の接着シートから前記剥離基材を剥離して、前記基材フィルム及び前記第1の粘接着層からなる第1の積層体を得る第1の剥離工程と、
前記第1の積層体における前記第1の粘接着層を半導体ウェハに貼り付ける第1の貼り付け工程と、
前記半導体ウェハ及び前記第1の粘接着層をダイシングすることにより、前記第1の粘接着層が付着した半導体素子を得る第1のダイシング工程と、
前記第1の粘接着層が付着した前記半導体素子を前記基材フィルムからピックアップする第1のピックアップ工程と、
前記半導体素子を、前記第1の粘接着層を介して半導体素子搭載用の支持部材に接着する第1の接着工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第1のピックアップ工程において、前記第1の粘接着層に高エネルギー線を照射して前記第1の粘接着層の前記基材フィルムに対する粘着力を低下させた後に、ピックアップを行うことを特徴とする請求項15記載の半導体装置の製造方法。
- 請求項6又は7記載の接着シートから前記剥離基材を剥離して、前記基材フィルム、前記第1の粘接着層及び前記第2の粘接着層からなる第2の積層体を得る第2の剥離工程と、
前記第2の積層体における前記第1の粘接着層を半導体ウェハに貼り付け、前記第2の粘接着層をウェハリングに貼り付ける第2の貼り付け工程と、
前記半導体ウェハ及び前記第1の粘接着層をダイシングすることにより、前記第1の粘接着層が付着した半導体素子を得る第2のダイシング工程と、
前記第1の粘接着層が付着した前記半導体素子を前記基材フィルムからピックアップする第2のピックアップ工程と、
前記半導体素子を、前記第1の粘接着層を介して半導体素子搭載用の支持部材に接着する第2の接着工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第2のピックアップ工程において、前記第1の粘接着層に高エネルギー線を照射して前記第1の粘接着層の前記基材フィルムに対する粘着力を低下させた後に、ピックアップを行うことを特徴とする請求項17記載の半導体装置の製造方法。
- 請求項8記載の接着シートから前記剥離基材を剥離して、前記基材フィルム、前記第1の粘接着層、前記中間層及び前記第2の粘接着層からなる第3の積層体を得る第3の剥離工程と、
前記第3の積層体における前記第1の粘接着層を半導体ウェハに貼り付け、前記第2の粘接着層をウェハリングに貼り付ける第3の貼り付け工程と、
前記半導体ウェハ及び前記第1の粘接着層をダイシングすることにより、前記第1の粘接着層が付着した半導体素子を得る第3のダイシング工程と、
前記第1の粘接着層が付着した前記半導体素子を前記基材フィルムからピックアップする第3のピックアップ工程と、
前記半導体素子を、前記第1の粘接着層を介して半導体素子搭載用の支持部材に接着する第3の接着工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第3のピックアップ工程において、前記第1の粘接着層に高エネルギー線を照射して前記第1の粘接着層の前記基材フィルムに対する粘着力を低下させた後に、ピックアップを行うことを特徴とする請求項19記載の半導体装置の製造方法。
- 請求項15〜20のうちのいずれか一項に記載の半導体装置の製造方法により製造されていることを特徴とする半導体装置。
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Also Published As
Publication number | Publication date |
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US20080261039A1 (en) | 2008-10-23 |
US8470115B2 (en) | 2013-06-25 |
CN102176407B (zh) | 2014-11-05 |
WO2006040945A1 (ja) | 2006-04-20 |
KR20070053326A (ko) | 2007-05-23 |
US8465615B2 (en) | 2013-06-18 |
JP4677758B2 (ja) | 2011-04-27 |
CN102176407A (zh) | 2011-09-07 |
CN102190978A (zh) | 2011-09-21 |
US20120068312A1 (en) | 2012-03-22 |
CN102174298A (zh) | 2011-09-07 |
KR100892799B1 (ko) | 2009-04-10 |
KR20080093079A (ko) | 2008-10-17 |
US20130295314A1 (en) | 2013-11-07 |
US20130302570A1 (en) | 2013-11-14 |
TWI303454B (ja) | 2008-11-21 |
CN102190978B (zh) | 2013-09-18 |
KR20080093078A (ko) | 2008-10-17 |
CN102169817B (zh) | 2014-10-22 |
TW200627536A (en) | 2006-08-01 |
US20120073743A1 (en) | 2012-03-29 |
KR100915491B1 (ko) | 2009-09-03 |
KR101022175B1 (ko) | 2011-03-17 |
CN102169817A (zh) | 2011-08-31 |
US20120135176A1 (en) | 2012-05-31 |
CN101040023B (zh) | 2011-05-04 |
CN101040023A (zh) | 2007-09-19 |
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