WO2012050134A1 - ウェハ加工用テープ、ウェハ加工用テープの製造方法、及び半導体装置の製造方法 - Google Patents
ウェハ加工用テープ、ウェハ加工用テープの製造方法、及び半導体装置の製造方法 Download PDFInfo
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- WO2012050134A1 WO2012050134A1 PCT/JP2011/073436 JP2011073436W WO2012050134A1 WO 2012050134 A1 WO2012050134 A1 WO 2012050134A1 JP 2011073436 W JP2011073436 W JP 2011073436W WO 2012050134 A1 WO2012050134 A1 WO 2012050134A1
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- Prior art keywords
- adhesive layer
- wafer
- tape
- wafer processing
- film
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 26
- 239000012790 adhesive layer Substances 0.000 claims abstract description 89
- 239000010410 layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 68
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 29
- 239000002313 adhesive film Substances 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 claims description 15
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 19
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
- C09J7/403—Adhesives in the form of films or foils characterised by release liners characterised by the structure of the release feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/18—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet characterized by perforations in the adhesive tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/204—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive coating being discontinuous
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1476—Release layer
Definitions
- the present invention relates to a wafer processing tape used for dicing a semiconductor wafer and die bonding of a semiconductor chip obtained by dicing, a method for manufacturing a wafer processing tape, and a method for manufacturing a semiconductor device using the same.
- a wafer ring is generally arranged around the semiconductor wafer, and the wafer processing tape is attached to the wafer ring. At this time, if the peeling strength between the wafer processing tape and the wafer ring is insufficient, the wafer processing tape is peeled off from the wafer ring in each process such as the dicing process and the die bonding process. May cause trouble.
- the present invention has been made to solve the above-mentioned problems, and is capable of improving the peel strength between the wafer ring, a wafer processing tape, a method for manufacturing the wafer processing tape, and a semiconductor using the same.
- An object is to provide a method for manufacturing a device.
- a wafer processing tape is a wafer processing tape that is used by being attached to a wafer ring during processing of a semiconductor wafer, and includes a peeling base material that forms the base of the tape, and a semiconductor wafer
- An adhesive layer provided on one side of the release substrate corresponding to the planar shape, an adhesive layer provided to cover the adhesive layer, and a base film provided to cover the adhesive layer;
- an area that protrudes outside the adhesive layer is a sticking area to the wafer ring, and the sticking area faces the center side of the adhesive layer in a plan view.
- the convex cut portion is formed with a depth reaching the release substrate from the substrate film side.
- a convex notch that faces the center side of the adhesive layer in a plan view corresponding to the region to be attached to the wafer ring is formed at a depth that reaches the release substrate from the substrate film side.
- the outer portion (outer portion) of the adhesive layer and the base film is peeled off first.
- the inner portion (inner portion) from the cut portion remains in the wafer ring in a convex shape.
- the peeling force further acts, the inner part tries to peel by being pulled by the outer part, but the area of peeling increases and the point of action of the tension is located behind the inner part. Greater peel force is required. Therefore, with this wafer processing tape, the peel strength between the wafer processing tape and the wafer ring can be improved.
- a plurality of cut portions are arranged along the pasting region. In this case, the peel strength between the wafer processing tape and the wafer ring can be further improved.
- the cut portion further has a convex portion facing the outside of the adhesive layer in a plan view.
- a liquid that generates a peeling force such as cooling water during dicing can escape from the convex portion to the outside of the wafer processing tape. Therefore, it is possible to further secure the peel strength between the wafer processing tape and the wafer ring.
- the cut portion does not penetrate the peeling substrate.
- a notch part does not act when peeling a peeling base material in the use of a tape for wafer processing, peeling of a peeling base material becomes easy.
- 0 ⁇ d / a ⁇ 0.7 is satisfied, where a is the thickness of the release substrate and d is the depth of the cut portion in the release substrate.
- a dicing tape according to the present invention is a dicing tape used by being attached to a wafer ring during dicing of a semiconductor wafer, and a peeling base material forming the base of the tape, and an adhesive layer provided on one surface side of the peeling base material,
- a base film provided so as to cover the pressure-sensitive adhesive layer, and the outer edge of the pressure-sensitive adhesive layer and the base film is a sticking area to the wafer ring in a plan view, and the outer edge is flat.
- a convex cut portion facing the center side of the pressure-sensitive adhesive layer in view is formed with a depth reaching the release substrate from the substrate film side.
- the outer edge portion of the adhesive layer and the base film is a sticking region to the wafer ring in a plan view, and the outer edge portion has a convex cut portion facing the center side of the adhesive layer. It is formed with a depth reaching the release substrate from the substrate film side.
- the method for manufacturing a wafer processing tape according to the present invention is a method for manufacturing a wafer processing tape that is used by being affixed to a wafer ring during processing of a semiconductor wafer, and a peeling base material forming the base of the tape, and a semiconductor wafer
- the second preparation step of preparing a pressure-sensitive adhesive film composed of layers a bonding step in which the adhesive layer and the pressure-sensitive adhesive layer face each other and the adhesive film and the pressure-sensitive adhesive film are bonded together, and the pressure-sensitive adhesive layer and the base film
- a convex incision facing the center side of the adhesive layer in plan view is formed on the peeling substrate from the base film side in a region to be attached to the wafer ring that is set to an area protruding outside the adhesive layer. It
- a convex cut portion facing the center side of the adhesive layer in a plan view corresponding to the attachment region to the wafer ring is formed on the release substrate from the substrate film side. It is formed to reach the depth.
- the peeling force further acts, the inner part tries to peel by being pulled by the outer part, but the area of peeling increases and the point of action of the tension is located behind the inner part. Greater peel force is required. Therefore, with this wafer processing tape, the peel strength between the wafer processing tape and the wafer ring can be improved.
- the cutting process it is preferable to form a plurality of cutting parts along the pasting area.
- the peel strength between the wafer processing tape and the wafer ring can be further improved.
- the cutting step it is preferable to further form a convex portion facing the outside of the adhesive layer in plan view.
- a liquid that generates a peeling force such as cooling water during dicing can escape from the convex portion to the outside of the wafer processing tape. Therefore, it is possible to further secure the peel strength between the wafer processing tape and the wafer ring.
- a notch part so that a peeling base material may not be penetrated in a notch process.
- peeling of a peeling base material becomes easy.
- the incision may be formed so as to satisfy 0 ⁇ d / a ⁇ 0.7, where a is the thickness of the release substrate and d is the depth of the incision. preferable. By satisfying this condition, it is possible to sufficiently exhibit the action of the cut portion.
- the manufacturing method of the semiconductor device according to the present invention is a manufacturing method of a semiconductor device using the wafer processing tape, wherein the film laminate in which the peeling substrate is peeled from the wafer processing tape is used as an adhesive layer. Fixing to one surface side of the semiconductor wafer through, a step of fixing the wafer ring through the adhesive layer in the pasting region of the film laminate, and a step of dicing the semiconductor wafer while supplying cooling water to the dicing blade It is characterized by having.
- the peel strength between the wafer processing tape and the wafer ring can be sufficiently secured, so that the wafer processing tape can be prevented from being peeled off from the wafer ring during the process. Therefore, workability is improved and the manufacturing yield of the semiconductor device can be secured.
- the peel strength between the wafer ring can be improved.
- the manufacturing yield of the semiconductor device can be secured.
- FIG. 2 is a sectional view taken along line II-II in FIG. It is a figure for demonstrating the direction of a notch part. It is a figure which shows the attachment method of the tape for wafer processing to a wafer ring. It is a figure which shows the attachment state of the tape for wafer processing to a wafer ring. It is a figure which shows the dicing process of a semiconductor wafer. It is a perspective view which shows the effect
- FIG. 9 is a sectional view taken along line IX-IX in FIG. 8.
- FIG. 1 is a plan view showing an embodiment of a wafer processing tape according to the present invention.
- 2 is a cross-sectional view taken along line II-II in FIG.
- a wafer processing tape 1 shown in FIGS. 1 and 2 is a long tape used for dicing a semiconductor wafer and die bonding of a semiconductor chip obtained by dicing, for example, and is usually wound in a roll shape. It has become.
- the wafer processing tape 1 has been pre-cut, and has a separation base 2 that forms the base of the tape and a predetermined distance on one side of the separation base 2 corresponding to the shape of the semiconductor wafer.
- the adhesive layer 3 provided in a circle
- the adhesive layer 4 provided in a circle so as to cover the adhesive layer 3
- the base provided in the same shape as the adhesive layer 4 so as to cover the adhesive layer 4
- the material film 5 is comprised.
- bank portions 6 and 6 are provided that are arranged at a predetermined interval from the circular pressure-sensitive adhesive layer 4 and the substrate film 5.
- the bank portions 6 and 6 are formed when the pressure-sensitive adhesive layer 4 and the base film 5 are precut.
- the peeling base material 2 and the adhesive bond layer 3 are formed with the below-mentioned adhesive film 18, and the base film 5 and the adhesive layer 4 are formed with the below-mentioned adhesive film 17.
- a region protruding outward from the adhesive layer 3 is a region P attached to the wafer ring.
- a plurality of cut portions 11 formed in a depth reaching the peeling substrate 2 from the substrate film 5 side are arranged in an annular shape.
- the cut portion 11 has a semicircular shape or a tongue shape in a plan view, and is formed in such a direction that the center side of the adhesive layer 3 is convex.
- the depth of the cut portion 11 is 0 ⁇ d / a ⁇ 0. 0 when the thickness a of the release substrate 2 and the depth of the cut portion in the release substrate 2 are d.
- the direction of the cut portion 11 only needs to be convex at the center side of the adhesive layer 3, and is perpendicular to the tangent line of the adhesive layer 3 with the convex tip of the cut portion 11 as a starting point. It is not necessary for the line extending to the center of the adhesive layer 3 to pass through the center point C.
- the number of the cut portions 11 is not particularly limited, but for example, the cut portions 11 are preferably arranged at intervals of 2 ° to 3 °.
- the semiconductor wafer 13 and the adhesive layer 3 are diced while supplying the cooling water 16 to the dicing blade 15.
- the adhesive layer 4 is irradiated with high energy rays to reduce the adhesive force, and the semiconductor chip with the adhesive layer 3 is picked up from the base film 5.
- the semiconductor device is obtained by bonding the semiconductor chip to a predetermined support member via the adhesive layer 3.
- the pressure from the cooling water 16 is applied to the wafer processing tape 1 (film laminate 12). For this reason, if the peel strength between the wafer processing tape 1 and the wafer ring 14 is insufficient, the wafer processing tape 1 may be peeled off from the wafer ring 14 and hinder dicing.
- the wafer processing tape 1 as shown in FIG. 1, a semicircular shape or tongue piece facing the center side of the adhesive layer 3 in a plan view corresponding to the sticking area P to the wafer ring 14.
- the cut portion 11 is formed with a depth that reaches the peeling substrate 2 from the substrate film 5 side.
- the cut portion 11 is formed in the adhesive layer 4 and the base film 5 as shown in FIG.
- the outer portions (outer portions 17a and 17a) are peeled off first, and the inner portion (inner portion 17b) from the cut portion 11 remains in the wafer ring 14 in a convex shape.
- the adhesive film 17 is not limited to an ultraviolet curable film, and may be a pressure-sensitive film. Since the pressure-sensitive film is easily peeled off from the wafer ring 14, the above-described formation of the cut portion 11 is particularly useful.
- the depth of the cut portion 11 satisfies 0 ⁇ d / a ⁇ 0.7 when the thickness a of the peeling substrate 2 and the depth of the cut portion are d. And it is the depth which does not penetrate the peeling base material 2. Thereby, it becomes possible to fully exhibit the effect
- SD-3004 manufactured by Hitachi Chemical Co., Ltd. is prepared as the adhesive film 17 composed of the adhesive layer 4 and the base film 5.
- the adhesive film 18 composed of the adhesive layer 3 and the release substrate 2 for example, HS-270 series manufactured by Hitachi Chemical Co., Ltd. is prepared.
- the adhesive film 18 is adjusted so that the depth of cut into the release substrate 2 is 20 ⁇ m or less, and is subjected to a circular pre-cut process of ⁇ 320 mm, and unnecessary portions of the adhesive layer 3 are removed.
- the adhesive layer 4 faces the adhesive layer 3, and the adhesive film 18 and the adhesive film 17 are attached under the conditions of room temperature, linear pressure 1 kg / cm, and speed 0.5 m / min. Then, the adhesive film 17 is adjusted so that the depth of cut into the release substrate 2 is 20 ⁇ m or less, and is subjected to circular precut processing with a diameter of 390 mm concentrically with the adhesive layer 3. Unnecessary portions of the film 5 are removed to form the bank portions 6 and 6. After pre-cutting the adhesive film 17, a semicircular or tongue-shaped cut portion 11 is annularly arranged using a predetermined mold at a position about 5 mm inside from the edge of the adhesive film 17. Thus, the wafer processing tape 1 is obtained.
- the present invention is not limited to the above embodiment.
- the release substrate 2, the adhesive layer 3 provided on one surface side of the release substrate 2, the adhesive layer 4 provided so as to cover the adhesive layer 3, and the adhesive layer 4, the adhesive film 3 may not be provided as shown in FIGS. 8 and 9.
- the dicing tape 20 includes a peeling substrate 2, a pressure-sensitive adhesive layer 4 provided on one surface side of the peeling substrate 2, and a base film 5 provided so as to cover the pressure-sensitive adhesive layer 4. May be.
- the cut portion 11 of the dicing 20 has a semicircular shape or a tongue shape in plan view, and is formed in such a direction that the center side of the adhesive layer 4 is convex.
- the depth of the notch 11 is the same as that of the wafer processing tape 1, and the thickness a of the release substrate 2 and the depth of the notch in the release substrate 2 are d. In this case, 0 ⁇ d / a ⁇ 0.7 is satisfied, and the depth does not penetrate through the peeling substrate 2.
- the center side of the adhesive layer 4 should just be convex.
- the dicing tape 20 can be obtained by the following procedure. First, an adhesive film 17 composed of the adhesive layer 4 and the substrate film 5 is laminated on the release substrate 2, and the depth of cut into the release substrate 2 is 20 ⁇ m or less with respect to the adhesive film 17. In this way, circular pre-cutting is performed, unnecessary portions of the adhesive layer 4 and the base film 5 are removed, and the bank portions 6 and 6 are formed. Thereafter, the dicing tape 20 is formed by arranging the semicircular or tongue-shaped cut portions 11 in a ring shape at a position about 5 mm inside from the edge of the adhesive film 17 using a predetermined mold. can get.
- the bank portions 6 and 6 are formed by circular precut processing of the adhesive film 17, but as shown in FIG. 10, the wafer processing tape 21 does not form the bank portions 6 and 6. May be.
- the shape of the cut portion may be a convex shape facing the center side of the adhesive layer 3 in a plan view, and various modifications can be applied.
- a rectangular cut portion 32 may be formed like a wafer processing tape 31 shown in FIG. 11, or a substantially V-shaped cut portion 42 may be formed like a wafer processing tape 41 shown in FIG. May be.
- a semicircular or tongue-shaped cut portion 52 may be formed in a double manner like a wafer processing tape 51 shown in FIG.
- Circular or tongue-shaped cut portions 62 may be formed in a zigzag pattern along two rows of annular lines, and the pressure-sensitive adhesive layer 4 and the base film 5 as in the wafer processing tape 71 shown in FIG. The position from may be made random for each cut portion 72.
- the cut portion 11 may be formed only on one side of the edge portion of the pressure-sensitive adhesive layer 4 and the base film 5 as in the wafer processing tape 81 shown in FIG. If it carries out like this, when using the tape 81 for wafer processing, the peeling base material 2 can be easily peeled from the area
- a convex portion facing the outside of the adhesive layer 3 in plan view may be further formed in the cut portion.
- a substantially N-shaped cut portion 92 may be formed so as to be adjacent to each other in the direction, and a convex shape facing the center side of the adhesive layer 3 like the wafer processing tape 101 shown in FIG.
- a substantially S-shaped cut portion 102 may be formed by the portion 102 a and the convex portion 102 b facing the outside of the adhesive layer 3. Further, a convex portion 112 a facing the center side of the adhesive layer 3 and a convex portion 112 b facing the outside of the adhesive layer 3 as in the wafer processing tape 111 shown in FIG. You may form the substantially X-shaped notch part 112 so that it may adjoin to radial direction.
- the inner portions of the cut portions 92, 102, 112 are convex.
- the inner portions of the cut portions 92, 102, 112 are formed in the convex portions 92b, 102b, 112b facing the outside of the adhesive layer 3 and cooled at the time of dicing.
- the water 16 can escape to the outside of the wafer processing tapes 91, 101 and 111. Therefore, the peel strength between the wafer processing tapes 91, 101, 111 and the wafer ring 14 can be further secured.
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Abstract
Description
図1は、本発明に係るウェハ加工用テープの一実施形態を示す平面図である。また、図2は、図1におけるII-II線断面図である。図1及び図2に示すウェハ加工用テープ1は、例えば半導体ウェハのダイシング、及びダイシングによって得られた半導体チップのダイボンディングに用いられる長尺のテープであり、通常はロール状に巻かれた状態となっている。
以上のようなウェハ加工用テープ1を用いて半導体装置を製造する場合、まず、図4(a)に示すように、ウェハ加工用テープ1から剥離基材2を剥離してフィルム積層体12を得る。次に、剥離基材2の剥離によって露出した接着剤層3を介し、図4(b)に示すように、フィルム積層体12を半導体ウェハ13の一面側に固定する。また、図4(b)及び図5に示すように、フィルム積層体12の貼付領域Pにおいて、粘着剤層4を介してウェハリング14を固定する。
ウェハ加工用テープ1の作製にあたって、粘着剤層4及び基材フィルム5からなる粘着フィルム17として、例えば日立化成工業株式会社製SD-3004を用意する。また、接着剤層3及び剥離基材2からなる接着フィルム18として、例えば日立化成工業株式会社製HS-270シリーズを用意する。次に、接着フィルム18に対し、剥離基材2への切り込み深さが20μm以下となるように調節してφ320mmの円形プリカット加工を行い、接着剤層3の不要部分を除去する。この後、粘着剤層4が接着剤層3を向き合わせ、室温、線圧1kg/cm、速度0.5m/分の条件で接着フィルム18と粘着フィルム17とを貼り付ける。そして、粘着フィルム17に対し、剥離基材2への切り込み深さが20μm以下となるように調節して接着剤層3と同心円状にφ390mmの円形プリカット加工を行い、粘着剤層4及び基材フィルム5の不要部分を除去して土手部6,6を形成する。粘着フィルム17のプリカットを行った後、粘着フィルム17の縁部から約5mm内側となる位置に所定の金型を用いて半円状又は舌片状の切込部11を環状に配列して形成することにより、ウェハ加工用テープ1が得られる。
上述の製造方法で得られたウェハ加工用テープ1(実施例)に対し、切込部11を形成しないウェハ加工用テープ(比較例)を別途作製した。そして、実施例のテープから1箇所の切込部11を含む幅10mm、長さ50mmの矩形の領域を切り取り、剥離基材2を剥がした後、エタノールで洗浄した粘着剤層4及び基材フィルム5を被着体(SUS304)の表面に室温にてラミネートして第1の試験片を作製した。また、比較例のテープから上述の矩形の領域と同等の領域を切り取り、剥離基材2を剥がした後、エタノールで洗浄した粘着剤層4及び基材フィルム5を被着体(SUS304)の表面に室温にてラミネートして第2の試験片を作製した。
本発明は、上記実施形態に限られるものではない。例えば上述した実施形態では、剥離基材2と、剥離基材2の一面側に設けられた接着剤層3と、接着剤層3を覆うように設けられた粘着剤層4と、粘着剤層4を覆うように設けられた基材フィルム5とによって構成されているが、図8及び図9に示すように、接着剤層3を備えていなくても構わない。すなわち、剥離基材2と、剥離基材2の一面側に設けられた粘着剤層4と、粘着剤層4を覆うように設けられた基材フィルム5と、を備えたダイシングテープ20であってもよい。
Claims (12)
- 半導体ウェハの加工時にウェハリングに貼り付けて用いるウェハ加工用テープであって、
テープの基部をなす剥離基材と、
前記半導体ウェハの平面形状に対応して前記剥離基材の一面側に設けられた接着剤層と、
前記接着剤層を覆うように設けられた粘着剤層と、
前記粘着剤層を覆うように設けられた基材フィルムと、を備え、
前記粘着剤層及び前記基材フィルムは、前記接着剤層よりも外側にはみ出す領域が前記ウェハリングへの貼付領域となっており、
前記貼付領域には、平面視において前記接着剤層の中心側を向く凸状の切込部が前記基材フィルム側から前記剥離基材に到達する深さで形成されていることを特徴とするウェハ加工用テープ。 - 前記切込部が前記貼付領域に沿って複数配列されていることを特徴とする請求項1記載のウェハ加工用テープ。
- 前記切込部は、平面視において前記接着剤層の外側を向く凸状の部分を更に有していることを特徴とする請求項1又は2記載のウェハ加工用テープ。
- 前記切込部は、前記剥離基材を貫通していないことを特徴とする請求項1~3のいずれか一項記載のウェハ加工用テープ。
- 前記剥離基材の厚さをa、前記切込部の深さをdとしたときに、0<d/a≦0.7を満たすことを特徴とする請求項1~4のいずれか一項記載のウェハ加工用テープ。
- 半導体ウェハのダイシング時にウェハリングに貼り付けて用いるダイシングテープであって、
テープの基部をなす剥離基材と、
前記剥離基材の一面側に設けられた粘着剤層と、
前記粘着剤層を覆うように設けられた基材フィルムと、を備え、
平面視において前記粘着剤層及び前記基材フィルムの外縁部が前記ウェハリングへの貼付領域となっており、
前記外縁部には、平面視において前記粘着剤層の中心側を向く凸状の切込部が基材フィルム側から剥離基材に到達する深さで形成されていることを特徴とするダイシングテープ。 - 半導体ウェハの加工時にウェハリングに貼り付けて用いるウェハ加工用テープの製造方法であって、
テープの基部をなす剥離基材、及び前記半導体ウェハの平面形状に対応して前記剥離基材の一面側に設けられた接着剤層からなる接着フィルムを準備する第1の準備工程と、
基材フィルム及び前記基材フィルムの一面側に設けられた粘着剤層からなる粘着フィルムを用意する第2の準備工程と、
前記接着剤層と前記粘着剤層とを向き合わせて前記接着フィルムと前記粘着フィルムとを貼り合わせる貼合工程と、
前記粘着剤層及び前記基材フィルムにおいて、前記接着剤層よりも外側にはみ出す領域に設定された前記ウェハリングへの貼付領域に、平面視において前記接着剤層の中心側を向く凸状の切込部を前記基材フィルム側から前記剥離基材に到達する深さで形成する切込工程と、を備えたことを特徴とするウェハ加工用テープの製造方法。 - 前記切込工程において、前記切込部を前記貼付領域に沿って複数配列して形成することを特徴とする請求項7記載のウェハ加工用テープの製造方法。
- 前記切込工程において、平面視において前記接着剤層の外側を向く凸状の部分を前記切込部に更に形成することを特徴とする請求項7又は8記載のウェハ加工用テープの製造方法。
- 前記切込工程において、前記剥離基材を貫通しないように前記切込部を形成することを特徴とする請求項7~9のいずれか一項記載のウェハ加工用テープの製造方法。
- 前記切込工程において、前記剥離基材の厚さをa、前記剥離基材における切込部の深さをdとしたときに、0<d/a≦0.7を満たすように前記切込部を形成することを特徴とする請求項7~10のいずれか一項記載のウェハ加工用テープの製造方法。
- 請求項1~6のいずれか一項に記載のウェハ加工用テープを用いた半導体装置の製造方法であって、
前記ウェハ加工用テープから前記剥離基材を剥離したフィルム積層体を、前記接着剤層を介して前記半導体ウェハの一面側に固定する工程と、
前記フィルム積層体の前記貼付領域において、前記粘着剤層を介して前記ウェハリングを固定する工程と、
ダイシングブレードに冷却水を供給しながら前記半導体ウェハをダイシングする工程と、を備えたことを特徴とする半導体装置の製造方法。
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JP2012538698A JP5590136B2 (ja) | 2010-10-15 | 2011-10-12 | ウェハ加工用テープ、ウェハ加工用テープの製造方法、及び半導体装置の製造方法 |
CN201180048659.9A CN103155109B (zh) | 2010-10-15 | 2011-10-12 | 晶圆加工用胶带、晶圆加工用胶带的制造方法以及半导体装置的制造方法 |
US13/878,985 US9076833B2 (en) | 2010-10-15 | 2011-10-12 | Tape for processing wafer, method for manufacturing tape for processing wafer, and method for manufacturing semiconductor device |
KR1020137007897A KR101464903B1 (ko) | 2010-10-15 | 2011-10-12 | 웨이퍼 가공용 테이프, 웨이퍼 가공용 테이프의 제조 방법, 및 반도체 장치의 제조 방법 |
US14/740,477 US9190309B2 (en) | 2010-10-15 | 2015-06-16 | Tape for processing wafer, method for manufacturing tape for processing |
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US14/740,477 Division US9190309B2 (en) | 2010-10-15 | 2015-06-16 | Tape for processing wafer, method for manufacturing tape for processing |
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JP5158908B1 (ja) * | 2012-04-02 | 2013-03-06 | 古河電気工業株式会社 | 接着シート |
JP5158906B1 (ja) * | 2012-04-02 | 2013-03-06 | 古河電気工業株式会社 | 接着シート |
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JP2015034200A (ja) * | 2013-08-07 | 2015-02-19 | リンテック株式会社 | 接着シート及び接着シート貼付方法 |
JP2019151745A (ja) * | 2018-03-02 | 2019-09-12 | 日東電工株式会社 | 剥離材付き接着シートの巻回体 |
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JP2013125925A (ja) * | 2011-12-16 | 2013-06-24 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ、ウエハ加工用テープの製造方法および回転打抜き刃 |
JP5158908B1 (ja) * | 2012-04-02 | 2013-03-06 | 古河電気工業株式会社 | 接着シート |
JP5158906B1 (ja) * | 2012-04-02 | 2013-03-06 | 古河電気工業株式会社 | 接着シート |
JP5158907B1 (ja) * | 2012-04-02 | 2013-03-06 | 古河電気工業株式会社 | 接着シート |
WO2013150962A1 (ja) * | 2012-04-02 | 2013-10-10 | 古河電気工業株式会社 | 接着シート |
WO2013150961A1 (ja) * | 2012-04-02 | 2013-10-10 | 古河電気工業株式会社 | 接着シート |
WO2013150963A1 (ja) * | 2012-04-02 | 2013-10-10 | 古河電気工業株式会社 | 接着シート |
US9523023B2 (en) | 2012-04-02 | 2016-12-20 | Furukawa Electric Co., Ltd. | Adhesive sheet |
US9631123B2 (en) | 2012-04-02 | 2017-04-25 | Furukawa Electric Co., Ltd. | Adhesive sheet |
JP2015034200A (ja) * | 2013-08-07 | 2015-02-19 | リンテック株式会社 | 接着シート及び接着シート貼付方法 |
JP2019151745A (ja) * | 2018-03-02 | 2019-09-12 | 日東電工株式会社 | 剥離材付き接着シートの巻回体 |
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US9190309B2 (en) | 2015-11-17 |
JP5590136B2 (ja) | 2014-09-17 |
US9076832B2 (en) | 2015-07-07 |
KR101464903B1 (ko) | 2014-11-24 |
CN103155109B (zh) | 2017-08-11 |
CN103155109A (zh) | 2013-06-12 |
US20120094471A1 (en) | 2012-04-19 |
KR20130050376A (ko) | 2013-05-15 |
US20150279717A1 (en) | 2015-10-01 |
TW201232650A (en) | 2012-08-01 |
TWI524406B (zh) | 2016-03-01 |
JPWO2012050134A1 (ja) | 2014-02-24 |
CN202415430U (zh) | 2012-09-05 |
US9076833B2 (en) | 2015-07-07 |
US20130273718A1 (en) | 2013-10-17 |
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