JP2005535112A - キャリアガスを使用した昇華システム - Google Patents
キャリアガスを使用した昇華システム Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
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- 238000001704 evaporation Methods 0.000 claims description 3
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- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical group Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
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- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical group Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (75)
- キャリアガス源と、
蒸気反応物質用の固体原料が表面に被覆された支持体であって、前記キャリアガスを前記支持体中に案内するように形成され、被覆されて共に層を形成し、前記支持体の上流に前記キャリアガス源が接続されている前記支持体と、
前記支持体の下流に接続された反応室と、
を備える基板処理システム。 - 前記支持体は、前記キャリアガスの飽和中に実質的に静止したままになるように構成される請求項1に記載のシステム。
- 前記反応室は、原子層堆積(ALD)室である請求項1に記載のシステム。
- 前記支持体は、曲がりくねった接触経路内に前記キャリアガスを案内するように構成される請求項1に記載のシステム。
- 前記キャリアガス源の下流かつ前記反応室の上流に配置された昇華容器をさらに含み、前記支持体は、前記容器内に配置され、前記固体原料の被覆は、層の体積に対する、曝される全表面積の比率が約0.1cm−1を超える請求項1に記載のシステム。
- 前記層は、充填され流入出させ得る複数の支持エレメントからなる請求項1に記載のシステム。
- 前記支持体は、ビーズ、リング、シリンダおよびフィラメントからなる群から選択される形状を有する請求項1に記載のシステム。
- 前記固体原料の被覆は、層の体積に対する、曝される全表面積の比率が、約1cm−1を超える請求項1に記載のシステム。
- 前記蒸気反応物質用固体原料の蒸発を増加させ得る熱源をさらに備える請求項1に記載のシステム。
- 前記支持体を収容する容器をさらに備え、実質的に栓流の滞留時間分布の前記キャリアガスおよび蒸気反応物質を、前記容器中にパルス送りするように構成されている請求項1に記載のシステム。
- 原子層堆積(ALD)半導体処理システムであって、
キャリアガス源と、
蒸気反応物質用の固体原料が被覆され、前記キャリアガスを概ね非平行な接触経路内に案内するように形成され、さらに複数の各パルスにおいて前記キャリアガスの飽和を促進するように形成された支持体と、
前記支持体の下流に配置された反応室と、
前記支持体から前記反応室へ、飽和した前記キャリアガスのパルスを供給するように形成されたパルス機構と、
を備え、
前記支持体は、さらに、100,000パルスを超えて、前記蒸気反応物質による前記キャリアガスの飽和を繰り返すことを促進するように形成され、各パルスは約0.1から10秒間続く原子層堆積(ALD)半導体処理システム。 - 前記支持体は、さらに、蒸気反応物質の連続したパルス同士の間の時間が、0.400秒より長く、約10秒より短い場合に、前記キャリアガスが蒸気反応物質で繰り返し飽和することを促進するように形成される請求項11に記載の原子層堆積(ALD)システム。
- 前記支持体は、さらに、概ね非平行な複数の接触経路中に前記キャリアガスを案内するように形成される請求項11に記載の原子層堆積(ALD)システム。
- 流入出させ得る複数の支持エレメントであって、蒸気反応物質用の固体原料が被覆され、容器内に充填され、曲がりくねった接触経路内において前記支持エレメント中に案内するように形成された前記支持エレメントを備える、基板を製造するための半導体処理システム。
- 前記支持エレメントは、さらに、100,000パルスを超えて、蒸気反応物質用の前記固体原料と、前記容器を出ていくガスとが繰り返し飽和することを促進するように形成され、各パルスは、連続したパルス同士の間の時間が30秒を下回らずに、約0.1から10秒間続く請求項14に記載のシステム。
- 前記入口ポートの上流に配置されたキャリアガス源と、
前記出口ポートの下流に配置された化学気相成長(CVD)室とをさらに備える請求項14に記載の装置。 - 前記入口ポートの上流に配置されたキャリアガス源と、
前記出口ポートの下流に配置された原子層堆積(ALD)反応器とをさらに備える請求項14に記載の装置。 - 昇華容器と、
前記容器内へ通じる入口ポートと、
前記容器から外へ通じる口ポートと、
前記容器内に収容された蒸気反応物質用固体原料と、
蒸気反応物質用の固体原料の被覆が施された支持体と、
を備え、
前記被覆は、支持体の体積に対する、曝される表面積の比率が、約0.1cm−1を超える昇華装置。 - 対流伝達によって、前記支持体を通り前記出口ポートから蒸気反応物質を引き出すように構成されている請求項18に記載の装置。
- 前記支持体を通ってキャリアガスを案内するように構成されている請求項18に記載の装置。
- 前記支持体は、一度前記昇華容器内に挿入されると、実質的に静止するように形成される請求項18に記載の装置。
- 前記昇華容器内に配置されたマニホールドをさらに含み、当該マニホールドは、前記被覆された支持体と接触するような、前記容器全体へのキャリアガスの分配を行うように形成される請求項18に記載の装置。
- 前記昇華容器は、前記入口ポートと、前記容器の反対側の端部に配置された出口ポートとを有するように形成される請求項18に記載の装置。
- 前記昇華容器は、シリンダである請求項23に記載の装置。
- 前記支持体は、前記容器内に充填され流入出させ得る支持エレメントからなる請求項18に記載の装置。
- 前記支持エレメントは、ビーズ、シリンダ、フィラメントおよびリングからなる群から選択される形状を有する請求項25に記載の装置。
- 前記支持体は、固定型支持体である請求項18に記載の装置。
- 蒸気反応物質用固体原料で被覆された前記固定型支持体は、管、コイル管、管束、フィルタ、および複数の交差プレート構造体からなる群から選択される請求項27に記載の装置。
- 前記固定型支持体は、前記昇華容器の形状に実質的に適合するように構成される請求項27に記載の装置。
- 前記支持体は、概ね曲がりくねった接触経路を通って前記キャリアガスを案内するように構成される請求項18に記載の装置。
- 前記支持体は、実質的に不活性で熱伝導性のある支持体である請求項18に記載の装置。
- 前記支持体は、アルミナ(Al2O3)、融解石英、ステンレス鋼、ハステロイ、ニッケル、炭化ケイ素(SiC)、窒化ホウ素(BN)からなる群から選択される材料を含む請求項31に記載の装置。
- 前記蒸気反応物質用の固体原料の蒸発を増加させることができる熱源をさらに備える請求項18に記載の装置。
- 前記蒸気反応物質用の固体原料の被覆は、塩化ハフニウム(HfCl4)である請求項18に記載の装置。
- 前記蒸気反応物質用の固体原料の被覆は、塩化ジルコニウム(ZrCl4)である請求項18に記載の装置。
- 蒸気反応物質を用いた基板処理方法であって、
キャリアガスを入口ポートから容器内へ導入するステップと、
前記蒸気反応物質で前記キャリアガスを繰り返し飽和させるために、固体原料からの十分な蒸気反応物質と十分接触するように前記キャリアガスを案内するステップであって、当該キャリアガスの飽和は、キャリアガスの100,000を超えるパルスの間続けられ、各パルスは約0.1秒より長く続く、前記キャリアガス案内ステップと、
出口ポートを通って前記容器から前記キャリアガスを流出させるステップと、
を含む基板処理方法。 - 前記容器から前記キャリアガスを流出させるステップは、さらに、連続したパルス同士の間の時間を、約30秒を超えないようにして、前記出口ポートから前記キャリアガスをパルス送りするステップを含む請求項36に記載の方法。
- 案内ステップは、前記固体原料で被覆された支持体中に前記キャリアガスを流すステップを含む請求項36に記載の方法。
- 前記支持体を、前記昇華容器内の実質的静止位置へ挿入するステップをさらに含む請求項38に記載の方法。
- 前記キャリアガスを案内するステップは、フローガイドにより画定される概ね螺旋状の接触経路内に前記キャリアガスを案内するステップを含む請求項36に記載の方法。
- 前記固体原料蒸気を運ぶ前記キャリアガスを化学気相成長(CVD)反応器へ導くステップをさらに含む請求項36に記載の方法。
- 蒸気反応物質を運ぶ前記キャリアガスを原子層堆積(ALD)反応室へパルス送りするステップと、
前記反応室から過剰の蒸気反応物質を除去するステップと、
前記反応室に第2の反応物質をパルス送りするステップと、
前記反応室から過剰な第2の反応物質を除去するステップと、
をさらに含む請求項36に記載の方法。 - 充填ポートから前記昇華容器内に複数の支持エレメントを注入するステップをさらに含み、前記支持エレメントは、前記固体原料で被覆されている請求項36に記載の方法。
- 反応室に流す反応物質蒸気を生成する昇華装置であって、
昇華容器と、
前記容器内に収容される、蒸気反応物質用の固体原料層と、
前記固体原料が直接接触するキャリアガス案内構造体であって、実質的に隔離され曲がりくねったキャリアガス用接触路を設けることによって、前記固体原料層からの蒸気反応物質と接触するような前記キャリアガスの案内を行うように形成される前記キャリアガス案内構造体と、
前記キャリアガス案内構造体により提供される一体型接触経路の始めに配置された容器入口ポートと、
前記キャリアガス案内構造体により提供される一体型接触経路の端部に配置された容器出口ポートと、
を備え、
前記キャリアガス案内構造体は、前記入口ポートから出口ポートまでを測定した直線距離の約2.5倍を超える長さを有し実質的に隔離され曲がりくねった接触経路に沿って、前記キャリアガスと蒸気反応物質との接触を保証するように形成される昇華装置。 - 前記昇華層を形成する前記蒸気反応物質用の固体原料は、固形粉末状である請求項44に記載の昇華装置。
- 前記案内構造体は、前記昇華容器の床から昇華容器の天井まで延びるように形成されたフローガイドである請求項45に記載の昇華装置。
- 前記層は、単一の連続した層であり、前記フローガイドは、前記固体原料層と接触している螺旋状経路内にキャリアガスを案内するように形成される請求項46に記載の昇華装置。
- 前記案内構造体は、螺旋状通路内において前記キャリアガスを案内するように形成され、前記容器内に複数の階層を含み、当該各階層は、蒸気反応物質用の固体原料の1バッチ分を収容する請求項44に記載の昇華装置。
- 前記案内構造体は、さらに、積み重ねられ前記螺旋状通路の階層を部分的に画定する複数のトレイを備える請求項48に記載の昇華装置。
- 前記積み重ねられた複数のトレイの少なくとも1つは、案内用トレイであり、当該トレイは、少なくとも1つの実質的に円形の通路を備え、隣接したトレイへ前記キャリアガスを流す前に、前記案内用トレイの周りを少なくとも約200°で少なくとも一周させて前記キャリアガスを案内するように形成される請求項49に記載の昇華装置。
- 前記積み重ねられた複数のトレイの少なくとも1つは、案内用トレイであり、当該トレイは、第2の部分的な仕切りを備え、当該仕切りは、前記案内用トレイ内において少なくとも2つの実質的に円形の通路を部分的に画定し、トレイ側壁と組み合わされた前記第2の部分的な仕切りは、隣接して積み重ねられたトレイに前記キャリアガスを流す前に、前記キャリアガスを、前記案内用トレイの周りに約2周させて案内するように形成され、1周は、前記案内用トレイ周りを少なくとも200°である請求項49に記載の昇華装置。
- 前記第2の部分的な仕切りは、前記案内用トレイの周りに少なくとも2つの実質的に円形の通路を画定し、前記案内用通路は、さらに、相互に実質的に反対方向に前記キャリアガスを流すように形成された少なくとも2つの実質的に円形の通路を備える請求項51に記載の昇華装置。
- 前記支持体を収容する容器をさらに備え、前記システムは、実質的に栓流の滞留時間分布の前記キャリアガスおよび蒸気化学反応物質を、前記容器を通って容器出口からパルス送りするように構成される請求項44に記載の昇華装置。
- 基板処理方法であって、
キャリアガスを固体前駆体原料と接触させることによって、前駆体蒸気と実質的に飽和した前記キャリアガスのパルスを生成するステップと、
前駆体蒸気と実質的に飽和したキャリアガスの前記パルスを反応室内へ注入するステップと、
不活性ガスで前記反応室から前記パルスをパージするステップと、
前記基板が、前記前駆体と実質的に飽和するように、前記基板へ前記前駆体を堆積させるステップと、を含み、
注入、パージ、および堆積ステップは、前記前駆体蒸気と実質的に飽和したキャリアガスの前記パルスの連続した注入ステップ同士の間を30秒未満にして、少なくとも5サイクルを繰り返す、サイクルを含む基板処理方法。 - 前記前駆体と実質的に飽和したキャリアガスパルスの前記生成ステップは、0.1トルと100トルとの間の蒸気圧を作用させるステップを含む請求項54に記載の方法。
- 前記前駆体蒸気と実質的に飽和したキャリアガスパルスの前記生成ステップは、前記固体前駆体原料を収容する容器のキャリアガス入口とキャリアガス出口との間の距離の少なくとも2倍のキャリアガス接触経路に沿って、前記キャリアガスを前記固体前駆体と接触させるステップを含む請求項54に記載の方法。
- 前記前駆体蒸気と実質的に飽和したキャリアガスパルスの前記生成ステップは、隔離され曲がりくねったガス接触経路に沿って、前記キャリアガスを前記固体前駆体と接触させるステップを含む請求項54に記載の方法。
- 前記前駆体蒸気と実質的に飽和したキャリアガスパルスの前記生成ステップは、前記キャリアガスを支持体の固体前駆体の被覆と接触させるステップを含む請求項54に記載の方法。
- 前記パルス生成ステップは、前記前駆体蒸気と実質的に飽和したキャリアガスが、前記固体前駆体原料を収容した容器を出ていくことを一時的に妨げることによって、各注入を行った後に前記固体原料を隔離するステップを含む請求項54に記載の方法。
- 基板表面に層を堆積する原子層堆積(ALD)プロセスを実行する方法であって、
キャリアガスが実質的に前駆体蒸気と飽和するように、昇華容器内において前記キャリアガスを固体前駆体原料からの前記前駆体蒸気と接触させるステップと、
前記実質的に飽和したキャリアガスを、前記容器から管を通って基板処理室へ流すステップと、
前記実質的に飽和したキャリアガスを前記基板処理室へパルス送りするステップと、
前記容器からの前記実質的に飽和したキャリアガスの流れを停止するステップと、
前記基板処理室からの前記実質的に飽和したキャリアガスを、実質的に不活性のガスでパージするステップと、
を含み、
前記パルス送り、停止、およびパージステップは、サイクルを含み、当該サイクルは、前記層の堆積中に少なくとも2回繰り返される方法。 - 第2のキャリアガスが、第2の固体前駆体原料からの第2の前駆体蒸気と実質的に飽和するように、前記キャリアガスを前記第2の前駆体蒸気と接触させるステップをさらに含む請求項60に記載の方法。
- 前記昇華容器の再充填の時間は、前記基板処理室内への実質的に飽和したキャリアガスの流れの前記停止ステップと、次の前記パルス送りステップとの間において、0.400秒より長く、30秒より短い請求項60に記載の方法。
- 前記流れの停止ステップは、パルス同士の間において0.400秒を超え10秒を下回る間、前記処理室から前記昇華容器を隔離するステップを含む請求項60に記載の方法。
- 1つのサイクルにおける各パルス送りの時間は、少なくとも0.1から10秒を含む請求項63に記載の方法。
- 各パルスは、少なくとも100,000サイクルの間に実質的に飽和する請求項63に記載の方法。
- 各パルスは、少なくとも500,000サイクルの間に実質的に飽和する請求項65に記載の方法。
- 各サイクルのみが完了した後、前記基板表面は、前記前駆体蒸気の吸着種と実質的に飽和する請求項63に記載の方法。
- 前記前駆体の約1層の単分子層が、サイクルごとに堆積する請求項60に記載の方法。
- 各サイクルは、約1から5Å堆積する請求項60に記載の方法。
- 前記容器から前記実質的に飽和したキャリアガスを流すステップは、前記容器から容器出口へ実質的な栓流を流すステップを含む請求項60に記載の方法。
- 昇華容器内においてキャリアガスを固体前駆体原料からの前駆体蒸気と接触させるステップは、前記容器内において、実質的に栓流の滞留時間分布の流れを生成するステップを含む請求項60に記載の方法。
- 前記基板処理室内への前記実質的に飽和したキャリアガスをパルス送りするステップは、前記基板処理室中に前記実質的な栓流を流すステップをさらに含む請求項71に記載の方法。
- 前記前駆体蒸気と実質的に飽和したキャリアガスのパルス生成ステップは、曲がりくねったキャリアガス接触経路に沿って、前記キャリアガスを前記固体前駆体原料と接触させるステップを含む請求項71に記載の方法。
- 前記前駆体蒸気と実質的に飽和したキャリアガスのパルス生成ステップは、前記キャリアガスを、支持体を被覆している前記固体前駆体原料と接触させるステップを含む請求項73に記載の方法。
- 反応室中に流すための反応物質蒸気を生成する昇華装置であって、
昇華容器と、
前記容器内に収容される、前記蒸気反応物質用の固体原料層と、
前記固体原料が直接接触する蒸気案内構造体であって、前記蒸気反応物質用であり実質的に隔離し曲がりくねった接触経路を設けることにより、前記固体原料層から前記蒸気反応物質を案内するように形成される前記蒸気案内構造体と、
前記案内構造体により提供され一体型の前記接触経路の最初に配置された容器入口ポートと、
前記案内構造体により提供され一体型の前記接触経路の端部に配置された容器出口ポートと、
を備え、
前記案内構造体は、前記入口ポートから前記出口ポートまでを測定した直線距離の約2.5倍を超える長さを有し実質的に隔離され曲がりくねった前記接触経路に沿って、対流伝達により前記蒸気反応物質を運ぶように形成される昇華装置。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011509351A (ja) * | 2008-01-10 | 2011-03-24 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 固体前駆体昇華器 |
KR101442850B1 (ko) | 2006-02-02 | 2014-11-19 | 베네끄 오이 | 은의 보호 피복 |
KR101480971B1 (ko) * | 2006-10-10 | 2015-01-09 | 에이에스엠 아메리카, 인코포레이티드 | 전구체 전달 시스템 |
JP2016000866A (ja) * | 2004-06-01 | 2016-01-07 | インテグリス・インコーポレーテッド | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
JP2020114581A (ja) * | 2019-01-18 | 2020-07-30 | Jx金属株式会社 | 塩化金属の昇華容器 |
JP2021031740A (ja) * | 2019-08-27 | 2021-03-01 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
JP2023501712A (ja) * | 2019-11-14 | 2023-01-18 | インテグリス・インコーポレーテッド | 昇華用の高密度化された固体プリフォーム |
Families Citing this family (434)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI118805B (fi) * | 2000-05-15 | 2008-03-31 | Asm Int | Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon |
TWI273642B (en) * | 2002-04-19 | 2007-02-11 | Ulvac Inc | Film-forming apparatus and film-forming method |
US7374617B2 (en) | 2002-04-25 | 2008-05-20 | Micron Technology, Inc. | Atomic layer deposition methods and chemical vapor deposition methods |
US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US6936086B2 (en) * | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
WO2004105095A2 (en) * | 2003-05-16 | 2004-12-02 | Svt Associates Inc. | Thin-film deposition evaporator |
KR20050004379A (ko) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | 원자층 증착용 가스 공급 장치 |
US7547363B2 (en) * | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
US7378129B2 (en) * | 2003-08-18 | 2008-05-27 | Micron Technology, Inc. | Atomic layer deposition methods of forming conductive metal nitride comprising layers |
US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
US20060102079A1 (en) * | 2004-11-15 | 2006-05-18 | Glassman Timothy E | Reducing variability in delivery rates of solid state precursors |
US7638002B2 (en) | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
US7484315B2 (en) * | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
US7488512B2 (en) | 2004-11-29 | 2009-02-10 | Tokyo Electron Limited | Method for preparing solid precursor tray for use in solid precursor evaporation system |
US7708835B2 (en) | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
DE102004062552A1 (de) * | 2004-12-24 | 2006-07-06 | Aixtron Ag | Vorrichtung zum Verdampfen von kondensierten Stoffen |
US7608549B2 (en) * | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
US7651570B2 (en) * | 2005-03-31 | 2010-01-26 | Tokyo Electron Limited | Solid precursor vaporization system for use in chemical vapor deposition |
US7432195B2 (en) | 2006-03-29 | 2008-10-07 | Tokyo Electron Limited | Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features |
US7562672B2 (en) | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
US8951478B2 (en) * | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US7473634B2 (en) | 2006-09-28 | 2009-01-06 | Tokyo Electron Limited | Method for integrated substrate processing in copper metallization |
US8986456B2 (en) * | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
JP5045062B2 (ja) * | 2006-10-30 | 2012-10-10 | 住友化学株式会社 | 固体有機金属化合物の供給方法 |
WO2008076350A1 (en) * | 2006-12-13 | 2008-06-26 | Universal Display Corporation | Improved evaporation process for solid phase materials |
US7833353B2 (en) * | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
US7678458B2 (en) * | 2007-01-24 | 2010-03-16 | Asml Holding N.V. | Bonding silicon silicon carbide to glass ceramics |
US7846256B2 (en) * | 2007-02-23 | 2010-12-07 | Tokyo Electron Limited | Ampule tray for and method of precursor surface area |
JP2009044023A (ja) * | 2007-08-10 | 2009-02-26 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
JP5141141B2 (ja) * | 2007-08-23 | 2013-02-13 | 東京エレクトロン株式会社 | 気化器、気化器を用いた原料ガス供給システム及びこれを用いた成膜装置 |
US20090317547A1 (en) * | 2008-06-18 | 2009-12-24 | Honeywell International Inc. | Chemical vapor deposition systems and methods for coating a substrate |
US8343583B2 (en) | 2008-07-10 | 2013-01-01 | Asm International N.V. | Method for vaporizing non-gaseous precursor in a fluidized bed |
RU2490367C2 (ru) * | 2008-10-08 | 2013-08-20 | Улвак, Инк. | Иcпаряющийся материал и способ его изготовления |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US8012876B2 (en) * | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
KR101015277B1 (ko) * | 2008-12-10 | 2011-02-15 | 삼성모바일디스플레이주식회사 | 증발원 |
JP5361467B2 (ja) * | 2009-03-13 | 2013-12-04 | 東京エレクトロン株式会社 | 気化器 |
JP5501807B2 (ja) * | 2009-03-31 | 2014-05-28 | 東京エレクトロン株式会社 | 処理装置 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8883270B2 (en) * | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
KR101084275B1 (ko) * | 2009-09-22 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법 |
EP3922751A1 (en) * | 2009-11-02 | 2021-12-15 | Sigma-Aldrich Co. LLC | Solid precursor delivery assemblies and related methods |
KR101074810B1 (ko) * | 2009-12-23 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 캐리어 가스 공급 구조가 개선된 증착 장치 및 그것을 이용한 유기 발광 디스플레이 장치 제조방법 |
TWI557261B (zh) * | 2010-04-19 | 2016-11-11 | Asm美國公司 | 先質輸送系統 |
WO2012006433A2 (en) * | 2010-07-07 | 2012-01-12 | Directed Vapor Technologies International, Inc. | Method and apparatus for applying a coating at a high rate onto non-line-of-sight regions of a substrate |
JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
KR20120139387A (ko) * | 2011-06-17 | 2012-12-27 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 박막 증착 방법 |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9238865B2 (en) | 2012-02-06 | 2016-01-19 | Asm Ip Holding B.V. | Multiple vapor sources for vapor deposition |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
TWI622664B (zh) | 2012-05-02 | 2018-05-01 | Asm智慧財產控股公司 | 相穩定薄膜,包括該薄膜之結構及裝置,及其形成方法 |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
EP2855730B1 (en) | 2012-05-31 | 2020-08-12 | Entegris Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
DE102012215708A1 (de) * | 2012-09-05 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Vorratsbehälter für eine beschichtungsanlage und beschichtungsanlage |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
KR101599286B1 (ko) * | 2014-01-17 | 2016-03-03 | (주) 엠에이케이 | 소수성 표면 처리장치 |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
KR101777777B1 (ko) * | 2015-12-23 | 2017-09-26 | 주식회사 포스코 | 고속 코팅용 진공 증착 장치 |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10483498B2 (en) * | 2016-04-22 | 2019-11-19 | Universal Display Corporation | High efficiency vapor transport sublimation source using baffles coated with source material |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180047692A1 (en) * | 2016-08-10 | 2018-02-15 | Amkor Technology, Inc. | Method and System for Packing Optimization of Semiconductor Devices |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
EP3610052A4 (en) * | 2017-04-10 | 2020-12-09 | Versum Materials US, LLC | AEROSOL-FREE CONTAINER FOR BULLAGE OF CHEMICAL PRECURSORS IN A DEPOSIT PROCESS |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
JP6895372B2 (ja) * | 2017-12-12 | 2021-06-30 | 東京エレクトロン株式会社 | 原料容器 |
KR20190072266A (ko) * | 2017-12-15 | 2019-06-25 | 삼성전자주식회사 | 소스 가스 공급 장치 및 이를 구비하는 증착 장치 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
JP6839672B2 (ja) * | 2018-02-06 | 2021-03-10 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN116732497A (zh) | 2018-02-14 | 2023-09-12 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11168394B2 (en) * | 2018-03-14 | 2021-11-09 | CeeVeeTech, LLC | Method and apparatus for making a vapor of precise concentration by sublimation |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11634812B2 (en) | 2018-08-16 | 2023-04-25 | Asm Ip Holding B.V. | Solid source sublimator |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
TWI728456B (zh) | 2018-09-11 | 2021-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 相對於基板的薄膜沉積方法 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
KR102072924B1 (ko) * | 2018-11-05 | 2020-02-03 | (주)에이텍솔루션 | 고효율 반도체 증착용 기화기 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP6901153B2 (ja) * | 2019-02-07 | 2021-07-14 | 株式会社高純度化学研究所 | 薄膜形成用金属ハロゲン化合物の固体気化供給システム。 |
JP6887688B2 (ja) * | 2019-02-07 | 2021-06-16 | 株式会社高純度化学研究所 | 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
CN113692641A (zh) * | 2019-04-17 | 2021-11-23 | 株式会社威尔康 | 气化器和其制造方法 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
US11788190B2 (en) | 2019-07-05 | 2023-10-17 | Asm Ip Holding B.V. | Liquid vaporizer |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN118422165A (zh) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
US11946136B2 (en) | 2019-09-20 | 2024-04-02 | Asm Ip Holding B.V. | Semiconductor processing device |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN112992667A (zh) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | 形成氮化钒层的方法和包括氮化钒层的结构 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) * | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
DE102020212606A1 (de) | 2020-10-06 | 2022-04-07 | Karlsruher Institut für Technologie | Struktur, Wärmetauscher umfassend eine Struktur, Wärmetauscheranlage umfassend einen Wärmetauscher, Verfahren zum Temperieren eines Partikelstroms, Verwendung einer Struktur zum Temperieren eines Partikelstroms, Verfahren zum Beschichten eines Substrats und Verfahren zum Auftrennen einer flüssigen Probe |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63195270A (ja) * | 1987-01-31 | 1988-08-12 | エヌ・ベー・フィリップス・フルーイランペンファブリケン | キャリヤガスを難揮発性物質の蒸気で富化する装置 |
JPS6464314A (en) * | 1987-09-04 | 1989-03-10 | Mitsubishi Electric Corp | Sublimator |
JPH01265511A (ja) * | 1988-04-15 | 1989-10-23 | Sumitomo Chem Co Ltd | 気相成長に用いる担体担持有機金属化合物及びこれを用いた気相成長用有機金属化合物供給装置 |
JPH0940489A (ja) * | 1995-03-30 | 1997-02-10 | Pioneer Electron Corp | Mocvdの固体原料供給方法及び供給装置 |
WO2002023614A1 (fr) * | 2000-09-18 | 2002-03-21 | Tokyo Electron Limited | Procede de formation d'un film d'isolant de grille, appareil pour la formation d'un film d'isolant de grille et outil combine |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4548138A (en) * | 1981-12-17 | 1985-10-22 | York-Shipley, Inc. | Fast fluidized bed reactor and method of operating the reactor |
DE3339625A1 (de) | 1983-11-02 | 1985-05-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Vorrichtung zum anreichern eines traegergases mit dem dampf eines wenig fluechtigen stoffes |
US4747367A (en) * | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US5123274A (en) * | 1987-07-08 | 1992-06-23 | Thermedics Inc. | Hand-held sample gun for vapor collection |
DE3801147A1 (de) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
US5252134A (en) * | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
US6132492A (en) * | 1994-10-13 | 2000-10-17 | Advanced Technology Materials, Inc. | Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same |
FR2727691A1 (fr) * | 1994-12-01 | 1996-06-07 | Framatome Sa | Procede de revetement d'un substrat en metal ou alliage passivable, par une couche d'oxyde, et tube de gainage et grille-entretoise pour assemblage combustible revetus d'une couche d'oxyde |
US5553395A (en) * | 1995-05-31 | 1996-09-10 | Hughes Aircraft Company | Bubbler for solid metal organic source material and method of producing saturated carrying gas |
JPH1025576A (ja) * | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Cvd成膜法における原料化合物の昇華方法 |
US5674574A (en) * | 1996-05-20 | 1997-10-07 | Micron Technology, Inc. | Vapor delivery system for solid precursors and method regarding same |
US6461982B2 (en) * | 1997-02-27 | 2002-10-08 | Micron Technology, Inc. | Methods for forming a dielectric film |
JP3684797B2 (ja) * | 1997-12-04 | 2005-08-17 | 株式会社デンソー | 気相成長方法および気相成長装置 |
JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
TW576873B (en) * | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6720259B2 (en) * | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
-
2003
- 2003-07-29 JP JP2004524213A patent/JP4585852B2/ja not_active Expired - Lifetime
- 2003-07-29 US US10/629,029 patent/US7122085B2/en not_active Expired - Lifetime
- 2003-07-29 AU AU2003254266A patent/AU2003254266A1/en not_active Abandoned
- 2003-07-29 EP EP03772108A patent/EP1525337A2/en not_active Withdrawn
- 2003-07-29 KR KR1020057001614A patent/KR101183109B1/ko active IP Right Grant
- 2003-07-29 WO PCT/US2003/023843 patent/WO2004011695A2/en active Application Filing
- 2003-07-30 TW TW092120786A patent/TWI319593B/zh not_active IP Right Cessation
- 2003-07-30 TW TW098121433A patent/TW200952073A/zh unknown
-
2006
- 2006-05-25 US US11/442,364 patent/US20060216419A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63195270A (ja) * | 1987-01-31 | 1988-08-12 | エヌ・ベー・フィリップス・フルーイランペンファブリケン | キャリヤガスを難揮発性物質の蒸気で富化する装置 |
JPS6464314A (en) * | 1987-09-04 | 1989-03-10 | Mitsubishi Electric Corp | Sublimator |
JPH01265511A (ja) * | 1988-04-15 | 1989-10-23 | Sumitomo Chem Co Ltd | 気相成長に用いる担体担持有機金属化合物及びこれを用いた気相成長用有機金属化合物供給装置 |
JPH0940489A (ja) * | 1995-03-30 | 1997-02-10 | Pioneer Electron Corp | Mocvdの固体原料供給方法及び供給装置 |
WO2002023614A1 (fr) * | 2000-09-18 | 2002-03-21 | Tokyo Electron Limited | Procede de formation d'un film d'isolant de grille, appareil pour la formation d'un film d'isolant de grille et outil combine |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016000866A (ja) * | 2004-06-01 | 2016-01-07 | インテグリス・インコーポレーテッド | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
KR101442850B1 (ko) | 2006-02-02 | 2014-11-19 | 베네끄 오이 | 은의 보호 피복 |
KR101480971B1 (ko) * | 2006-10-10 | 2015-01-09 | 에이에스엠 아메리카, 인코포레이티드 | 전구체 전달 시스템 |
JP2011509351A (ja) * | 2008-01-10 | 2011-03-24 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 固体前駆体昇華器 |
JP2020114581A (ja) * | 2019-01-18 | 2020-07-30 | Jx金属株式会社 | 塩化金属の昇華容器 |
JP7240881B2 (ja) | 2019-01-18 | 2023-03-16 | Jx金属株式会社 | 塩化金属の昇華容器 |
JP2021031740A (ja) * | 2019-08-27 | 2021-03-01 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
WO2021039493A1 (ja) * | 2019-08-27 | 2021-03-04 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
JP7240993B2 (ja) | 2019-08-27 | 2023-03-16 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
JP2023501712A (ja) * | 2019-11-14 | 2023-01-18 | インテグリス・インコーポレーテッド | 昇華用の高密度化された固体プリフォーム |
JP7432722B2 (ja) | 2019-11-14 | 2024-02-16 | インテグリス・インコーポレーテッド | 昇華用の高密度化された固体プリフォーム |
Also Published As
Publication number | Publication date |
---|---|
TWI319593B (en) | 2010-01-11 |
KR101183109B1 (ko) | 2012-09-24 |
US20050072357A1 (en) | 2005-04-07 |
TW200952073A (en) | 2009-12-16 |
US20060216419A1 (en) | 2006-09-28 |
AU2003254266A8 (en) | 2004-02-16 |
AU2003254266A1 (en) | 2004-02-16 |
EP1525337A2 (en) | 2005-04-27 |
TW200403721A (en) | 2004-03-01 |
WO2004011695A2 (en) | 2004-02-05 |
WO2004011695A3 (en) | 2004-11-04 |
JP4585852B2 (ja) | 2010-11-24 |
US7122085B2 (en) | 2006-10-17 |
KR20050030963A (ko) | 2005-03-31 |
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