FI57975B - Foerfarande och anordning vid uppbyggande av tunna foereningshinnor - Google Patents
Foerfarande och anordning vid uppbyggande av tunna foereningshinnor Download PDFInfo
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- FI57975B FI57975B FI790680A FI790680A FI57975B FI 57975 B FI57975 B FI 57975B FI 790680 A FI790680 A FI 790680A FI 790680 A FI790680 A FI 790680A FI 57975 B FI57975 B FI 57975B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Claims (15)
1. Förfarande vid uppbyggande av tunna föreningshinnor med hjälp av ytreaktioner av föreningskomponenterna, vid vilket förfarande ytan av ett substrat utsätts för växelvisa ytreaktioner med olika ämnen som innehaller komponenter av sagda förening genom att mata gaser av nämnda ämnen uprepade ganger och växelvis in i ett reaktions-rum, i vilket nämnda substrat är placerat och genom att läta nämnda gaser reagera med substratytan, pä vilken yta salunda uppbyggs en tunn föreningshinneprodukt i fast tillstand vid temperaturen av nämnda substratyta, kännetecknat därav, att vid förfarandet ett medium i gasfas inmatas i nämnda reaktionsrum ätminstone under pauser mellan de växelvisa inmatningarna av sagda ämnen, och att samtidig växelverkan av nämnda växelvis inmatade gaser med ytan som byggs upp förhindras med en diffusionsvall som astadkoms genom inmatningen av nämnda gasformiga medium.
2. Förfarande enligt patentkravet 1, kännetecknat därav, att gaserna som reagerar med ytan som byggs upp förs in i reaktionsrummet medelst en bärgas, som samtidigt är nämnda medium i vilket diffusionsvallen har bildats.
3. Förfarande enligt patentkravet 1 eller 2, kännetecknat därav, att källomraden för de reaktiva gaserna har avskilts fran reaktionsrummet med diffusions-vallar som bildats med hjälp av en skiljegas.
4. Förfarande enligt patentkravet 1,2 eller 3, kännetecknat därav, att ett kondensationsomrade för reaktionsrester har avskilts fran reaktionsrummet med hjälp av en diffusionsvall.
5. Förfarande enligt patentkravet 1,2,3 eller 4, kännetecknat därav, att strömningen i reaktionsrummet och spärrströmningen för källorna astadkoms medelst skilda sugpumpar.
6. Förfarande enligt patentkravet 1,2,3 eller 4, kännetecknat därav, att strömningen i reaktionsrummet och spärrströmningen för källorna astadkoms medelst en gemensam sugpump.
7. Anordning för förverkligande av förfarandet enligt patentkraven 1-6, kännetecknad därav, att anordningen som kombination omfattar följande komponenter: 22 57975 en reaktionskammare (10;60,61;72,73,74,75,80;110), som inom sig begränsar ett reaktionsrum (18;76), i vilket substrat (11; 11') placeras, pä vilka en tunn föreningshinna (100) byggs upp; vakuumpumpanordningar (17,50), som är kopplade tili nämnda reaktionsrum (18;76); källanordningar (20;53;81,82) för atminstone tva olika reaktiva gaser, vilka källanordningar är förenade med nämnda reaktionsrum (18;76); källanordningar för en inert bär- och/eller skiljegas, vilka källanordningar är förenade med nämnda reaktionsrum (18;76); värmeanordningar (15;47;56,56') , medelst vilka reaktionsrummet (18) och källorna för reaktiva gaser halls vid en viss temperatur samt regler- och styranordningar (22,23,26,30;44,S^;91), medelst vilka funktionen av ovannämnda anordningar styrs och regleras sä, att funktionen av en anordning enligt uppfinningsförfarandet förverkligas.
8. Anordning enligt patentkravet 7, kännetecknad därav, att sugpumpen (17) är förenad med reaktionskammarens (10;60;110) utgängssida med avseende pa riktningen av strömningen (v) av inert bär- och/eller skiljegas och att källorna (20;53,54;81,82) för reaktiva gaser och källorna för bär- och/eller skiljegas är förenade med reaktionskammarens (10;60;110) ingängssida.
9. Anordning enligt patentkravet 8, kännetecknad därav, att källan (fQ) för inert skiljegas är förenad med ett förbindelserör (12) mellan källan (20;41,42) för reaktiv gas och reaktionskammaren (10; 110) (figurerna 5,6,12).
10. Anordning enligt patentkravet 9, kännetecknad därav, att den med avseende pä nämnda förbindelserör (12) motsatta sidan av källan (41,42) för reaktiv gas är förenad med sugpumpen (17;50), medelst vilken frän nämnda skiljegaskälla (fQ) astadkoms en strömning (ty) som bildar en diffusionsvall.
11. Anordning enligt patentkravet 7,8,9 eller 10, kännetecknad därav, att källan för inert bärgas är förenad genom förmedling av en pulsventil (44) eller 1iknande med källan (20;41,42) för reaktiv gas pä motsatta sidan med avseende pä dess tili reaktionsrummet (18) ledande förbindelserör (12).
12. Anordning enligt patentkravet 7,8,9,10 eller 11, kännetecknad därav, att i reaktionsrummet (18) är anordnade stationära hällare, i vilka substraten (11;11a,11b,11c) fästs.
Priority Applications (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI790680A FI57975C (fi) | 1979-02-28 | 1979-02-28 | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US06/050,606 US4413022A (en) | 1979-02-28 | 1979-06-21 | Method for performing growth of compound thin films |
EP80100568A EP0015390B1 (en) | 1979-02-28 | 1980-02-04 | Method and apparatus for performing growth of thin films of a compound |
AT80100568T ATE15820T1 (de) | 1979-02-28 | 1980-02-04 | Verfahren und vorrichtung zum erzielen des wachstums duenner schichten einer verbindung. |
DE8080100568T DE3071110D1 (en) | 1979-02-28 | 1980-02-04 | Method and apparatus for performing growth of thin films of a compound |
ZA00800852A ZA80852B (en) | 1979-02-28 | 1980-02-14 | Method and apparatus for performing growth of compound thin films |
IL59393A IL59393A (en) | 1979-02-28 | 1980-02-15 | Method and apparatus for performing growth of compound thin films |
IN193/CAL/80A IN152596B (sv) | 1979-02-28 | 1980-02-20 | |
AU55786/80A AU535151B2 (en) | 1979-02-28 | 1980-02-21 | Atomic layer epitaxial growth of thin films |
MX181260A MX151518A (es) | 1979-02-28 | 1980-02-21 | Metodo y aparato mejorados para llevar a cabo el crecimiento de peliculas compuestas |
BR8001087A BR8001087A (pt) | 1979-02-28 | 1980-02-25 | Processo e aparelho para desenvolvimento de uma pelicula fina composta de diferentes elementos em uma superficie de substrato |
CA000346409A CA1166937A (en) | 1979-02-28 | 1980-02-26 | Method and apparatus for performing growth of compound thin films |
DK084680A DK157943C (da) | 1979-02-28 | 1980-02-27 | Fremgangsmaade og apparat til udfoerelse af en epitaksiel vaekst af atomare lag |
PL1980222293A PL138247B1 (en) | 1979-02-28 | 1980-02-27 | Method of producing thin films of compoenets of various elements,in particular thin oxide films on glass and apparatus therefor |
NO800555A NO155106C (no) | 1979-02-28 | 1980-02-27 | Fremgangsmaate og apparat for gjennomfoering av en atomsjiktsepitaksivekst. |
SU802889600A SU1085510A3 (ru) | 1979-02-28 | 1980-02-27 | Способ получени составной пленки и устройство дл его осуществлени |
HU80445A HU181779B (en) | 1979-02-28 | 1980-02-27 | Method and apparatus for growing thin film layer combined from atoms of various elements on some carrier surface |
JP55023480A JPS6021955B2 (ja) | 1979-02-28 | 1980-02-28 | 化合物薄膜の成長のための方法と装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI790680 | 1979-02-28 | ||
FI790680A FI57975C (fi) | 1979-02-28 | 1979-02-28 | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
Publications (2)
Publication Number | Publication Date |
---|---|
FI57975B true FI57975B (fi) | 1980-07-31 |
FI57975C FI57975C (fi) | 1980-11-10 |
Family
ID=8512439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI790680A FI57975C (fi) | 1979-02-28 | 1979-02-28 | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
Country Status (18)
Country | Link |
---|---|
US (1) | US4413022A (sv) |
EP (1) | EP0015390B1 (sv) |
JP (1) | JPS6021955B2 (sv) |
AT (1) | ATE15820T1 (sv) |
AU (1) | AU535151B2 (sv) |
BR (1) | BR8001087A (sv) |
CA (1) | CA1166937A (sv) |
DE (1) | DE3071110D1 (sv) |
DK (1) | DK157943C (sv) |
FI (1) | FI57975C (sv) |
HU (1) | HU181779B (sv) |
IL (1) | IL59393A (sv) |
IN (1) | IN152596B (sv) |
MX (1) | MX151518A (sv) |
NO (1) | NO155106C (sv) |
PL (1) | PL138247B1 (sv) |
SU (1) | SU1085510A3 (sv) |
ZA (1) | ZA80852B (sv) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7846499B2 (en) | 2004-12-30 | 2010-12-07 | Asm International N.V. | Method of pulsing vapor precursors in an ALD reactor |
WO2011019950A1 (en) | 2009-08-14 | 2011-02-17 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
Families Citing this family (523)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889821A (ja) * | 1981-11-24 | 1983-05-28 | Canon Inc | 堆積膜の製造装置 |
JPS5898917A (ja) * | 1981-12-09 | 1983-06-13 | Seiko Epson Corp | 原子層エビタキシヤル装置 |
FI64878C (fi) * | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
US4664960A (en) * | 1982-09-23 | 1987-05-12 | Energy Conversion Devices, Inc. | Compositionally varied materials and method for synthesizing the materials |
EP0145201A1 (en) * | 1983-11-10 | 1985-06-19 | Optical Coating Laboratory, Inc. | Antireflection optical coating with antistatic properties |
JPS60189928A (ja) * | 1984-03-12 | 1985-09-27 | Fujitsu Ltd | 減圧気相成長装置 |
JPH0782991B2 (ja) * | 1984-07-26 | 1995-09-06 | 新技術事業団 | 化合物半導体単結晶薄膜の成長法 |
JPH0766910B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長装置 |
JPH0715884B2 (ja) * | 1984-07-26 | 1995-02-22 | 新技術事業団 | 選択型結晶の成長方法 |
JPH0782990B2 (ja) * | 1984-07-26 | 1995-09-06 | 新技術事業団 | 半導体装置の製造方法 |
GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
JPH0787179B2 (ja) * | 1984-07-26 | 1995-09-20 | 新技術事業団 | 超格子半導体装置の製造方法 |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH0766908B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長方法 |
JPH0766907B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体結晶成長方法 |
JP2577542B2 (ja) * | 1984-07-26 | 1997-02-05 | 新技術事業団 | 半導体結晶成長装置 |
JPH0766906B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | GaAsエピタキシャル成長方法 |
JPH07120625B2 (ja) * | 1984-08-08 | 1995-12-20 | 新技術事業団 | 化合物半導体単結晶薄膜の形成方法 |
JP2577543B2 (ja) * | 1984-08-08 | 1997-02-05 | 新技術事業団 | 単結晶薄膜成長装置 |
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DE1057845B (de) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen |
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US3721583A (en) * | 1970-12-08 | 1973-03-20 | Ibm | Vapor phase epitaxial deposition process for forming superlattice structure |
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-
1979
- 1979-02-28 FI FI790680A patent/FI57975C/fi not_active IP Right Cessation
- 1979-06-21 US US06/050,606 patent/US4413022A/en not_active Expired - Lifetime
-
1980
- 1980-02-04 EP EP80100568A patent/EP0015390B1/en not_active Expired
- 1980-02-04 DE DE8080100568T patent/DE3071110D1/de not_active Expired
- 1980-02-04 AT AT80100568T patent/ATE15820T1/de not_active IP Right Cessation
- 1980-02-14 ZA ZA00800852A patent/ZA80852B/xx unknown
- 1980-02-15 IL IL59393A patent/IL59393A/xx unknown
- 1980-02-20 IN IN193/CAL/80A patent/IN152596B/en unknown
- 1980-02-21 MX MX181260A patent/MX151518A/es unknown
- 1980-02-21 AU AU55786/80A patent/AU535151B2/en not_active Ceased
- 1980-02-25 BR BR8001087A patent/BR8001087A/pt unknown
- 1980-02-26 CA CA000346409A patent/CA1166937A/en not_active Expired
- 1980-02-27 DK DK084680A patent/DK157943C/da not_active IP Right Cessation
- 1980-02-27 PL PL1980222293A patent/PL138247B1/pl unknown
- 1980-02-27 HU HU80445A patent/HU181779B/hu unknown
- 1980-02-27 SU SU802889600A patent/SU1085510A3/ru active
- 1980-02-27 NO NO800555A patent/NO155106C/no unknown
- 1980-02-28 JP JP55023480A patent/JPS6021955B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7846499B2 (en) | 2004-12-30 | 2010-12-07 | Asm International N.V. | Method of pulsing vapor precursors in an ALD reactor |
WO2011019950A1 (en) | 2009-08-14 | 2011-02-17 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
Also Published As
Publication number | Publication date |
---|---|
ATE15820T1 (de) | 1985-10-15 |
US4413022A (en) | 1983-11-01 |
PL222293A1 (sv) | 1980-11-03 |
PL138247B1 (en) | 1986-08-30 |
DE3071110D1 (en) | 1985-10-31 |
DK157943C (da) | 1990-08-27 |
NO155106C (no) | 1987-02-11 |
MX151518A (es) | 1984-12-10 |
EP0015390A1 (en) | 1980-09-17 |
DK84680A (da) | 1980-08-29 |
IL59393A0 (en) | 1980-05-30 |
SU1085510A3 (ru) | 1984-04-07 |
JPS55130896A (en) | 1980-10-11 |
AU5578680A (en) | 1980-09-04 |
AU535151B2 (en) | 1984-03-08 |
JPS6021955B2 (ja) | 1985-05-30 |
FI57975C (fi) | 1980-11-10 |
CA1166937A (en) | 1984-05-08 |
HU181779B (en) | 1983-11-28 |
NO800555L (no) | 1980-08-29 |
IN152596B (sv) | 1984-02-18 |
ZA80852B (en) | 1981-02-25 |
DK157943B (da) | 1990-03-05 |
BR8001087A (pt) | 1980-10-29 |
EP0015390B1 (en) | 1985-09-25 |
NO155106B (no) | 1986-11-03 |
IL59393A (en) | 1983-06-15 |
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