FI20001694A0 - Förfarande för uppbyggnad av en tunnfilm på ett substrat - Google Patents

Förfarande för uppbyggnad av en tunnfilm på ett substrat

Info

Publication number
FI20001694A0
FI20001694A0 FI20001694A FI20001694A FI20001694A0 FI 20001694 A0 FI20001694 A0 FI 20001694A0 FI 20001694 A FI20001694 A FI 20001694A FI 20001694 A FI20001694 A FI 20001694A FI 20001694 A0 FI20001694 A0 FI 20001694A0
Authority
FI
Finland
Prior art keywords
growing
substrate
thin film
thin
film
Prior art date
Application number
FI20001694A
Other languages
English (en)
Finnish (fi)
Inventor
Pekka T Soininen
Sven Lindfors
Original Assignee
Asm Microchemistry Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Microchemistry Oy filed Critical Asm Microchemistry Oy
Priority to FI20001694A priority Critical patent/FI20001694A0/sv
Publication of FI20001694A0 publication Critical patent/FI20001694A0/sv
Priority to US10/333,521 priority patent/US6881263B2/en
Priority to JP2002513966A priority patent/JP5348817B2/ja
Priority to DE60125203T priority patent/DE60125203T2/de
Priority to TW090117837A priority patent/TW576874B/zh
Priority to EP01958109A priority patent/EP1322797B1/en
Priority to KR10-2003-7000743A priority patent/KR20030024787A/ko
Priority to PCT/FI2001/000680 priority patent/WO2002008488A1/en
Priority to AU2001279847A priority patent/AU2001279847A1/en
Priority to US10/975,578 priority patent/US7037372B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
FI20001694A 2000-07-20 2000-07-20 Förfarande för uppbyggnad av en tunnfilm på ett substrat FI20001694A0 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FI20001694A FI20001694A0 (sv) 2000-07-20 2000-07-20 Förfarande för uppbyggnad av en tunnfilm på ett substrat
US10/333,521 US6881263B2 (en) 2000-07-20 2001-07-20 Method of growing a thin film onto a substrate
JP2002513966A JP5348817B2 (ja) 2000-07-20 2001-07-20 基板上に薄膜を成長させる方法
DE60125203T DE60125203T2 (de) 2000-07-20 2001-07-20 Verfahren zum auftragen eines dünnen films auf einem substrat
TW090117837A TW576874B (en) 2000-07-20 2001-07-20 Method of growing a thin film onto a substrate
EP01958109A EP1322797B1 (en) 2000-07-20 2001-07-20 Method of growing a thin film onto a substrate
KR10-2003-7000743A KR20030024787A (ko) 2000-07-20 2001-07-20 기판 상의 박막 성장 방법
PCT/FI2001/000680 WO2002008488A1 (en) 2000-07-20 2001-07-20 Method of growing a thin film onto a substrate
AU2001279847A AU2001279847A1 (en) 2000-07-20 2001-07-20 Method of growing a thin film onto a substrate
US10/975,578 US7037372B2 (en) 2000-07-20 2004-10-28 Method of growing a thin film onto a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20001694A FI20001694A0 (sv) 2000-07-20 2000-07-20 Förfarande för uppbyggnad av en tunnfilm på ett substrat

Publications (1)

Publication Number Publication Date
FI20001694A0 true FI20001694A0 (sv) 2000-07-20

Family

ID=8558804

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20001694A FI20001694A0 (sv) 2000-07-20 2000-07-20 Förfarande för uppbyggnad av en tunnfilm på ett substrat

Country Status (9)

Country Link
US (2) US6881263B2 (sv)
EP (1) EP1322797B1 (sv)
JP (1) JP5348817B2 (sv)
KR (1) KR20030024787A (sv)
AU (1) AU2001279847A1 (sv)
DE (1) DE60125203T2 (sv)
FI (1) FI20001694A0 (sv)
TW (1) TW576874B (sv)
WO (1) WO2002008488A1 (sv)

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US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
AU2003238853A1 (en) 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
GB0219987D0 (en) 2002-08-28 2002-10-09 Isis Innovation Intramolecular interactions in organometallics
US20040142558A1 (en) 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US6818094B2 (en) 2003-01-29 2004-11-16 Applied Materials, Inc. Reciprocating gas valve for pulsing a gas
US6994319B2 (en) 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US6868859B2 (en) 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US7537662B2 (en) 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US20080206987A1 (en) 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US20090214782A1 (en) * 2008-02-21 2009-08-27 Forrest Stephen R Organic vapor jet printing system
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US9188989B1 (en) 2011-08-20 2015-11-17 Daniel T. Mudd Flow node to deliver process gas using a remote pressure measurement device
US9958302B2 (en) 2011-08-20 2018-05-01 Reno Technologies, Inc. Flow control system, method, and apparatus
US9690301B2 (en) 2012-09-10 2017-06-27 Reno Technologies, Inc. Pressure based mass flow controller
US9448564B2 (en) 2013-02-15 2016-09-20 Reno Technologies, Inc. Gas delivery system for outputting fast square waves of process gas during semiconductor processing
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
DE102011121078B4 (de) * 2011-12-12 2013-11-07 Oliver Feddersen-Clausen Zyklisches Verdampfungsverfahren
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
CN103602959B (zh) * 2013-11-19 2016-04-13 华中科技大学 一种原子层沉积前驱体输出装置
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10303189B2 (en) 2016-06-30 2019-05-28 Reno Technologies, Inc. Flow control system, method, and apparatus
US11144075B2 (en) 2016-06-30 2021-10-12 Ichor Systems, Inc. Flow control system, method, and apparatus
US10679880B2 (en) 2016-09-27 2020-06-09 Ichor Systems, Inc. Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same
US10838437B2 (en) 2018-02-22 2020-11-17 Ichor Systems, Inc. Apparatus for splitting flow of process gas and method of operating same
US10663337B2 (en) 2016-12-30 2020-05-26 Ichor Systems, Inc. Apparatus for controlling flow and method of calibrating same
US10927459B2 (en) 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
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FI117944B (sv) * 1999-10-15 2007-04-30 Asm Int Förfarande för framställning av övergångsmetallnitridtunnfilmer
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
EP0671484B1 (en) * 1994-03-10 1997-09-10 Gi Corporation Gas flow system for CVD reactor
FI100409B (sv) 1994-11-28 1997-11-28 Asm Int Förfarande och anläggning för framställning av tunnfilmer
WO2001029280A1 (en) * 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
TW576873B (en) * 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate

Also Published As

Publication number Publication date
DE60125203T2 (de) 2007-09-20
AU2001279847A1 (en) 2002-02-05
TW576874B (en) 2004-02-21
JP5348817B2 (ja) 2013-11-20
JP2004504497A (ja) 2004-02-12
US6881263B2 (en) 2005-04-19
US7037372B2 (en) 2006-05-02
EP1322797A1 (en) 2003-07-02
US20030224107A1 (en) 2003-12-04
DE60125203D1 (de) 2007-01-25
WO2002008488A1 (en) 2002-01-31
EP1322797B1 (en) 2006-12-13
KR20030024787A (ko) 2003-03-26
US20050056211A1 (en) 2005-03-17

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