DE60037707D1 - Herstellungsverfahren für dünnfilmtransistoren - Google Patents

Herstellungsverfahren für dünnfilmtransistoren

Info

Publication number
DE60037707D1
DE60037707D1 DE60037707T DE60037707T DE60037707D1 DE 60037707 D1 DE60037707 D1 DE 60037707D1 DE 60037707 T DE60037707 T DE 60037707T DE 60037707 T DE60037707 T DE 60037707T DE 60037707 D1 DE60037707 D1 DE 60037707D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film transistors
transistors
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037707T
Other languages
English (en)
Other versions
DE60037707T2 (de
Inventor
Stephen J Battersby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TPO Hong Kong Holding Ltd
Original Assignee
TPO Hong Kong Holding Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TPO Hong Kong Holding Ltd filed Critical TPO Hong Kong Holding Ltd
Publication of DE60037707D1 publication Critical patent/DE60037707D1/de
Application granted granted Critical
Publication of DE60037707T2 publication Critical patent/DE60037707T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE60037707T 1999-03-27 2000-03-09 Herstellungsverfahren für dünnfilmtransistoren Expired - Lifetime DE60037707T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9907019.5A GB9907019D0 (en) 1999-03-27 1999-03-27 Thin film transistors and their manufacture
GB9907019 1999-03-27
PCT/EP2000/002099 WO2000059027A1 (en) 1999-03-27 2000-03-09 Thin film transistors and their manufacture

Publications (2)

Publication Number Publication Date
DE60037707D1 true DE60037707D1 (de) 2008-02-21
DE60037707T2 DE60037707T2 (de) 2008-12-24

Family

ID=10850436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037707T Expired - Lifetime DE60037707T2 (de) 1999-03-27 2000-03-09 Herstellungsverfahren für dünnfilmtransistoren

Country Status (7)

Country Link
US (1) US6380009B1 (de)
EP (1) EP1086490B1 (de)
JP (1) JP4509392B2 (de)
KR (1) KR100844392B1 (de)
DE (1) DE60037707T2 (de)
GB (1) GB9907019D0 (de)
WO (1) WO2000059027A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426245B1 (en) * 1999-07-09 2002-07-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR100779425B1 (ko) * 2001-12-29 2007-11-26 엘지.필립스 엘시디 주식회사 배면 노광을 이용한 비오에이 구조 액정표시장치 및 그의제조방법
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
KR20040025949A (ko) * 2002-09-17 2004-03-27 아남반도체 주식회사 반도체 소자의 게이트 형성 방법
US7332431B2 (en) * 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2004040649A1 (ja) 2002-11-01 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN100347813C (zh) * 2004-03-08 2007-11-07 友达光电股份有限公司 薄膜晶体管阵列基板及薄膜叠层结构的制造方法
US7303959B2 (en) * 2005-03-11 2007-12-04 Sandisk 3D Llc Bottom-gate SONOS-type cell having a silicide gate
US7344928B2 (en) 2005-07-28 2008-03-18 Palo Alto Research Center Incorporated Patterned-print thin-film transistors with top gate geometry
TWI294689B (en) * 2005-09-14 2008-03-11 Ind Tech Res Inst Method of tft manufacturing and a base-board substrate structure
TWI585498B (zh) 2006-05-16 2017-06-01 半導體能源研究所股份有限公司 液晶顯示裝置和半導體裝置
CN101325219B (zh) * 2007-06-15 2010-09-29 群康科技(深圳)有限公司 薄膜晶体管基板及其制造方法
US8110450B2 (en) 2007-12-19 2012-02-07 Palo Alto Research Center Incorporated Printed TFT and TFT array with self-aligned gate
KR20090124527A (ko) 2008-05-30 2009-12-03 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
GB2466495B (en) * 2008-12-23 2013-09-04 Cambridge Display Tech Ltd Method of fabricating a self-aligned top-gate organic transistor
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
JP5500907B2 (ja) * 2009-08-21 2014-05-21 株式会社日立製作所 半導体装置およびその製造方法
CN102652356B (zh) 2009-12-18 2016-02-17 株式会社半导体能源研究所 半导体装置
JP2012191008A (ja) * 2011-03-10 2012-10-04 Sony Corp 表示装置および電子機器
GB2492442B (en) 2011-06-27 2015-11-04 Pragmatic Printing Ltd Transistor and its method of manufacture
GB201202544D0 (en) 2012-02-14 2012-03-28 Pragmatic Printing Ltd Electronic devices
GB2499606B (en) * 2012-02-21 2016-06-22 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
JP6706570B2 (ja) * 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165459A (ja) 1983-03-09 1984-09-18 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
JPS6347981A (ja) * 1986-08-18 1988-02-29 Alps Electric Co Ltd 薄膜トランジスタおよびその製造方法
JPS6370576A (ja) * 1986-09-12 1988-03-30 Komatsu Ltd 薄膜トランジスタおよびその製造方法
JPH0760233B2 (ja) 1987-10-22 1995-06-28 富士通株式会社 薄膜トランジスタマトリクスの製造方法
JPH01225363A (ja) 1988-03-04 1989-09-08 Nec Corp 薄膜トランジスタ及びその製造方法
JPH03120872A (ja) * 1989-10-04 1991-05-23 Seiko Epson Corp 半導体装置及びその製造方法
GB2235326A (en) * 1989-08-16 1991-02-27 Philips Electronic Associated Active matrix liquid crystal colour display devices
JPH0413390A (ja) * 1990-05-02 1992-01-17 Oki Electric Ind Co Ltd 画像パケット多重化装置
JPH0662706A (ja) * 1991-12-17 1994-03-08 Shinko Metal Prod Kk 航空機搭載用の活魚の運搬コンテナー
US5191631A (en) * 1991-12-19 1993-03-02 At&T Bell Laboratories Hybrid optical fiber and method of increasing the effective area of optical transmission using same
JPH0722626A (ja) 1993-07-07 1995-01-24 Fujitsu Ltd スタガー型薄膜トランジスタの製造方法
JPH07153964A (ja) * 1993-11-30 1995-06-16 Sanyo Electric Co Ltd 多結晶シリコン薄膜トランジスタ及びその製造方法
GB9325984D0 (en) * 1993-12-20 1994-02-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film transistors
JPH08186269A (ja) * 1994-05-30 1996-07-16 Sanyo Electric Co Ltd 半導体装置の製造方法，半導体装置，薄膜トランジスタ，薄膜トランジスタの製造方法，表示装置
JPH07325323A (ja) * 1994-06-02 1995-12-12 Matsushita Electric Ind Co Ltd 液晶表示装置
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
US5597747A (en) * 1995-12-15 1997-01-28 Industrial Technology Research Institute Method of making inverted thin film transistor using backsick exposure and negative photoresist
GB9626344D0 (en) * 1996-12-19 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
GB9726511D0 (en) * 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such

Also Published As

Publication number Publication date
GB9907019D0 (en) 1999-05-19
EP1086490A1 (de) 2001-03-28
JP2002540630A (ja) 2002-11-26
US6380009B1 (en) 2002-04-30
JP4509392B2 (ja) 2010-07-21
KR100844392B1 (ko) 2008-07-08
DE60037707T2 (de) 2008-12-24
KR20010025104A (ko) 2001-03-26
EP1086490B1 (de) 2008-01-09
WO2000059027A1 (en) 2000-10-05

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Legal Events

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