DE60005874D1 - Herstellungsverfahren für einen porösen Siliziumoxid-Film - Google Patents
Herstellungsverfahren für einen porösen Siliziumoxid-FilmInfo
- Publication number
- DE60005874D1 DE60005874D1 DE60005874T DE60005874T DE60005874D1 DE 60005874 D1 DE60005874 D1 DE 60005874D1 DE 60005874 T DE60005874 T DE 60005874T DE 60005874 T DE60005874 T DE 60005874T DE 60005874 D1 DE60005874 D1 DE 60005874D1
- Authority
- DE
- Germany
- Prior art keywords
- oxide film
- manufacturing process
- silicon oxide
- porous silicon
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021426 porous silicon Inorganic materials 0.000 title 1
Classifications
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11072252A JP3084367B1 (ja) | 1999-03-17 | 1999-03-17 | 層間絶縁膜の形成方法及び半導体装置 |
JP7225299 | 1999-03-17 |
Publications (2)
Publication Number | Publication Date |
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DE60005874D1 true DE60005874D1 (de) | 2003-11-20 |
DE60005874T2 DE60005874T2 (de) | 2004-05-19 |
Family
ID=13483926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60005874T Expired - Fee Related DE60005874T2 (de) | 1999-03-17 | 2000-02-21 | Herstellungsverfahren für einen porösen Siliziumoxid-Film |
Country Status (6)
Country | Link |
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US (1) | US6413879B1 (de) |
EP (1) | EP1037275B1 (de) |
JP (1) | JP3084367B1 (de) |
KR (1) | KR100375999B1 (de) |
DE (1) | DE60005874T2 (de) |
TW (1) | TW455944B (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020076935A1 (en) * | 1997-10-22 | 2002-06-20 | Karen Maex | Anisotropic etching of organic-containing insulating layers |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6800571B2 (en) | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
JP3184177B2 (ja) * | 1999-03-26 | 2001-07-09 | キヤノン販売株式会社 | 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置 |
US7011868B2 (en) | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
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EP0849796A3 (de) | 1996-12-17 | 1999-09-01 | Texas Instruments Incorporated | Verbesserungen in oder in Beziehung zu integrierten Schaltungen |
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-
1999
- 1999-03-17 JP JP11072252A patent/JP3084367B1/ja not_active Expired - Lifetime
-
2000
- 2000-02-10 US US09/499,519 patent/US6413879B1/en not_active Expired - Fee Related
- 2000-02-11 TW TW089102262A patent/TW455944B/zh active
- 2000-02-19 KR KR10-2000-0007971A patent/KR100375999B1/ko not_active IP Right Cessation
- 2000-02-21 EP EP00103333A patent/EP1037275B1/de not_active Expired - Lifetime
- 2000-02-21 DE DE60005874T patent/DE60005874T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000269207A (ja) | 2000-09-29 |
JP3084367B1 (ja) | 2000-09-04 |
TW455944B (en) | 2001-09-21 |
EP1037275B1 (de) | 2003-10-15 |
KR100375999B1 (ko) | 2003-03-17 |
EP1037275A1 (de) | 2000-09-20 |
US6413879B1 (en) | 2002-07-02 |
DE60005874T2 (de) | 2004-05-19 |
KR20000076694A (ko) | 2000-12-26 |
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