DE69633754D1 - Herstellungsverfahren für einen dünnen Halbleiterfilm - Google Patents
Herstellungsverfahren für einen dünnen HalbleiterfilmInfo
- Publication number
- DE69633754D1 DE69633754D1 DE69633754T DE69633754T DE69633754D1 DE 69633754 D1 DE69633754 D1 DE 69633754D1 DE 69633754 T DE69633754 T DE 69633754T DE 69633754 T DE69633754 T DE 69633754T DE 69633754 D1 DE69633754 D1 DE 69633754D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor film
- thin semiconductor
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02908695A JP3208274B2 (ja) | 1995-02-17 | 1995-02-17 | 半導体薄膜の製造方法及びそれに用いるプラズマcvd装置 |
JP2908795 | 1995-02-17 | ||
JP2908695 | 1995-02-17 | ||
JP2908795 | 1995-02-17 | ||
JP33969695 | 1995-12-26 | ||
JP33969695A JP3201576B2 (ja) | 1995-02-17 | 1995-12-26 | 半導体薄膜の製造方法及びその製造方法を用いたプラズマcvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69633754D1 true DE69633754D1 (de) | 2004-12-09 |
DE69633754T2 DE69633754T2 (de) | 2005-10-27 |
Family
ID=27286422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69633754T Expired - Lifetime DE69633754T2 (de) | 1995-02-17 | 1996-02-16 | Herstellungsverfahren für einen dünnen Halbleiterfilm |
Country Status (3)
Country | Link |
---|---|
US (2) | US5618758A (de) |
EP (1) | EP0727826B1 (de) |
DE (1) | DE69633754T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010071123A (ko) * | 1998-03-31 | 2001-07-28 | 모리시타 요이찌 | 액정표시장치용 tft 어레이기판과 그 제조방법 및그것을 이용한 액정표시장치와 그 제조방법 |
US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
DE19935046C2 (de) * | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
US6451390B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Deposition of TEOS oxide using pulsed RF plasma |
WO2003036703A1 (en) * | 2001-10-22 | 2003-05-01 | Unaxis Usa, Inc. | Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma |
US7570028B2 (en) * | 2007-04-26 | 2009-08-04 | Advanced Energy Industries, Inc. | Method and apparatus for modifying interactions between an electrical generator and a nonlinear load |
JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
JP4761322B2 (ja) | 2009-04-30 | 2011-08-31 | シャープ株式会社 | 半導体膜の成膜方法および光電変換装置の製造方法 |
US8716984B2 (en) | 2009-06-29 | 2014-05-06 | Advanced Energy Industries, Inc. | Method and apparatus for modifying the sensitivity of an electrical generator to a nonlinear load |
TWI606490B (zh) | 2010-07-02 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體膜的製造方法,半導體裝置的製造方法,和光電轉換裝置的製造方法 |
US8773018B2 (en) * | 2011-01-25 | 2014-07-08 | Paul F. Hensley | Tuning a dielectric barrier discharge cleaning system |
JP6009171B2 (ja) * | 2012-02-14 | 2016-10-19 | 東京エレクトロン株式会社 | 基板処理装置 |
CN102693893B (zh) * | 2012-04-28 | 2015-01-14 | 北京工业大学 | 一种利用调频的方式改善高频放电等离子体均匀性的方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
JPH01244664A (ja) * | 1988-03-25 | 1989-09-29 | Sanyo Electric Co Ltd | 薄膜トランジスタ |
EP0395415B1 (de) * | 1989-04-27 | 1995-03-15 | Fujitsu Limited | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas |
US5057185A (en) * | 1990-09-27 | 1991-10-15 | Consortium For Surface Processing, Inc. | Triode plasma reactor with phase modulated plasma control |
EP0533044B1 (de) * | 1991-09-20 | 1999-12-29 | Balzers Aktiengesellschaft | Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage |
JPH08980B2 (ja) * | 1991-12-06 | 1996-01-10 | 日新電機株式会社 | プラズマcvd法及び装置 |
JPH05335244A (ja) * | 1992-05-29 | 1993-12-17 | Anelva Corp | アモルファスシリコン薄膜の成膜方法 |
US5324388A (en) * | 1992-06-22 | 1994-06-28 | Matsushita Electric Industrial Co., Ltd. | Dry etching method and dry etching apparatus |
FR2708624A1 (fr) * | 1993-07-30 | 1995-02-10 | Neuville Stephane | Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié. |
CA2130167C (en) * | 1993-08-27 | 1999-07-20 | Jesse N. Matossian | Nondestructive determination of plasma processing treatment |
JP3146112B2 (ja) * | 1993-12-24 | 2001-03-12 | シャープ株式会社 | プラズマcvd装置 |
US5468341A (en) * | 1993-12-28 | 1995-11-21 | Nec Corporation | Plasma-etching method and apparatus therefor |
-
1996
- 1996-02-15 US US08/601,990 patent/US5618758A/en not_active Expired - Lifetime
- 1996-02-16 DE DE69633754T patent/DE69633754T2/de not_active Expired - Lifetime
- 1996-02-16 EP EP96301052A patent/EP0727826B1/de not_active Expired - Lifetime
-
1997
- 1997-01-10 US US08/783,283 patent/US6009828A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6009828A (en) | 2000-01-04 |
DE69633754T2 (de) | 2005-10-27 |
EP0727826A2 (de) | 1996-08-21 |
EP0727826A3 (de) | 1998-11-18 |
EP0727826B1 (de) | 2004-11-03 |
US5618758A (en) | 1997-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |