JP6009171B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP6009171B2 JP6009171B2 JP2012029860A JP2012029860A JP6009171B2 JP 6009171 B2 JP6009171 B2 JP 6009171B2 JP 2012029860 A JP2012029860 A JP 2012029860A JP 2012029860 A JP2012029860 A JP 2012029860A JP 6009171 B2 JP6009171 B2 JP 6009171B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- processing space
- plasma
- processing apparatus
- electromagnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Description
νgE = E/B … (1)
上記式(1)によれば、電界Eの強さが一定であるとすると、磁界Bの強度(磁場強度)が大きいほど電子のドリフト運動の速度は低下する。電子のドリフト運動の速度は低下すると、電子が或る箇所に滞在する時間が長くなるため、当該箇所において電子密度が上昇する。その結果、電子と処理ガスの分子や原子との衝突機会が増加するため、当該箇所においてプラズマ密度が上昇する。すなわち、電磁石20によって或る箇所の磁場強度を大きくすると、当該箇所のプラズマ密度を高くすることができる。
全磁束 = 起磁力/磁気抵抗 … (2)
全磁束は鉄心であるヨークの一端から生じる全ての磁力線の量であり、単位はWb(ウェーバ)で示され、起磁力はいわゆる磁気回路において磁束を発生させる力であり、単位はAT(アンペアターン)で示される。起磁力は、具体的にヨークに巻回されたコイルの巻回数と、該コイルに流れる電流の積で示される。したがって、コイルの巻回数が多くなり、該コイルに流れる電流の値が大きいほど、起磁力は大きくなる。また、磁気抵抗は磁気回路において磁束の流れにくさを表す指標であり、下記式(3)で示される。
磁気抵抗 = 磁路長/(透磁率×磁路断面積) … (3)
磁路長はヨークの長さであり、透磁率はヨークの透磁率であり、磁路断面積はヨークの断面積である。したがって、ヨークが長くなり、ヨークの直径が小さくなるほど、磁気抵抗は大きくなる。
E 電界
S 処理空間
W ウエハ
10,24 基板処理装置
11 チャンバ
12 サセプタ
13 上部電極
20,25,26 電磁石
21,27 中央部対向群
22,28 周縁領域対向群
23,29 外側対向群
14 第1の高周波電源
16 第2の高周波電源
Claims (11)
- 高周波電力が供給される下部電極と、該下部電極と対向して配置される上部電極との間の処理空間において電界を生じさせ、該電界により生ずるプラズマを用いて前記下部電極に載置した基板にプラズマ処理を施す基板処理装置であって、
前記上部電極の表面上に設けられ、各々は鉄心からなる棒状のヨーク及び該ヨークの側面に巻回されるコイルを有する複数の電磁石と、
各前記電磁石のコイルを流れる電流の値や電流の向きを制御するコントローラとを備え、
各前記電磁石は、
前記上部電極の中央部に配置され、且つ前記処理空間に対向する処理空間側磁極を有する少なくとも1つの前記電磁石を含む中央部群と、
前記上部電極の中央部に関して円環状に配置され、且つ前記中央部群よりも外側に配置され、各々が前記処理空間に対向する処理空間側磁極を有する複数の前記電磁石を含む周縁領域群と、
前記上部電極の中央部に関して円環状に配置され、且つ前記周縁領域群よりも外側に配置され、各々が前記処理空間に対向する処理空間側磁極を有する複数の前記電磁石を含む外側群とに仕分けされ、
前記周縁領域群は、前記下部電極に載置された前記基板の外側周縁の内側において放射状に配置され、前記外側群は、前記下部電極に載置された前記基板の外側周縁の外側において放射状に配置され、
前記複数の電磁石のヨークは同じ長さ及び同じ透磁率を有し、
前記外側群の前記複数の電磁石の各ヨークのコイルの巻回数及び直径は、前記中央部群及び前記周縁領域群の前記少なくとも1つの電磁石の各ヨークのコイルの巻回数及び直径よりも大きく、
前記中央部群の前記処理空間側磁極の極性は前記周縁領域群の前記処理空間側磁極の極性と同じであり、前記周縁領域群の前記処理空間側磁極の極性は前記外側群の前記処理空間側磁極の極性と異なることを特徴とする基板処理装置。 - 前記下部電極に供給される高周波電力の周波数が60MHz以上であることを特徴とする請求項1記載の基板処理装置。
- 前記コントローラは、前記周縁領域群の各前記電磁石の前記処理空間側磁極が同じ極性を有するように、前記周縁領域群の各前記電磁石のコイルを流れる電流の向きを制御し、
前記コントローラは、前記外側群の各前記電磁石の前記処理空間側磁極が同じ極性を有するように、前記外側群の各前記電磁石のコイルを流れる電流の向きを制御し、
前記コントローラは、前記周縁領域群の前記処理空間側磁極の極性と同じになるように、前記中央部群の前記処理空間側磁極の極性を制御し、
前記コントローラは、前記外側群の前記処理空間側磁極の極性と異なるように、前記周縁領域群の前記処理空間側磁極の極性を制御することを特徴とする請求項1又は2記載の基板処理装置。 - 前記コントローラは、前記下部電極へ高周波電力を供給するための第1の期間及び第2の期間を繰り返すことによって前記処理空間におけるプラズマ密度の分布を制御し、
前記第1の期間では、前記電界によってプラズマが生じるように前記高周波電力が供給され、
前記第2の期間では、前記電界によってプラズマが生じないように前記高周波電力が供給されることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。 - 前記コントローラは前記複数の電磁石の各々の前記コイルを流れる電流の向きを選択的に変更することを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
- 前記コントローラは、前記周縁領域群及び前記外側群の少なくとも1つの前記処理空間側磁極の極性を変更することを特徴とする請求項1乃至5のいずれか1項に記載の基板処理装置。
- 前記コントローラは、前記周縁領域群及び前記外側群の両方の前記処理空間側磁極の極性を変更することを特徴とする請求項6記載の基板処理装置。
- 前記コントローラは、前記中央部群、前記周縁領域群及び前記外側群少なくとも1つの電磁石の極性を反転させることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理装置。
- 前記上部電極の中心及び前記中央部群に含まれる前記少なくとも1つの電磁石の中心の間の距離は74.4mm以下であり、
前記上部電極の中心及び前記周縁領域群に含まれる前記電磁石の各々中心の間の距離は74.4mmより大、且つ148.8mm以下であり、
前記上部電極の中心及び前記外側群に含まれる前記電磁石の各々中心の間の距離は190mmであることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理装置。 - 前記第1の期間及び前記第2の期間の合計において前記第1の期間が占める割合は、10%〜90%である請求項4記載の基板処理装置。
- 前記中央部群、前記周縁領域群及び前記外側群の各電磁石の前記ヨークは同じ方向を指向することを特徴とする請求項1乃至10のいずれか1項に記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012029860A JP6009171B2 (ja) | 2012-02-14 | 2012-02-14 | 基板処理装置 |
CN201310047993.3A CN103247511B (zh) | 2012-02-14 | 2013-02-06 | 基板处理装置 |
TW102104710A TWI576913B (zh) | 2012-02-14 | 2013-02-07 | Substrate processing device |
US13/767,195 US9390943B2 (en) | 2012-02-14 | 2013-02-14 | Substrate processing apparatus |
KR1020130015821A KR102049117B1 (ko) | 2012-02-14 | 2013-02-14 | 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012029860A JP6009171B2 (ja) | 2012-02-14 | 2012-02-14 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013168449A JP2013168449A (ja) | 2013-08-29 |
JP6009171B2 true JP6009171B2 (ja) | 2016-10-19 |
Family
ID=48926945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012029860A Active JP6009171B2 (ja) | 2012-02-14 | 2012-02-14 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9390943B2 (ja) |
JP (1) | JP6009171B2 (ja) |
KR (1) | KR102049117B1 (ja) |
CN (1) | CN103247511B (ja) |
TW (1) | TWI576913B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104131252A (zh) * | 2013-05-02 | 2014-11-05 | 上海和辉光电有限公司 | 提高封装成膜均匀性的方法及装置 |
JP6204869B2 (ja) * | 2014-04-09 | 2017-09-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6284825B2 (ja) * | 2014-05-19 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2018028109A (ja) * | 2014-12-22 | 2018-02-22 | 旭硝子株式会社 | プラズマcvd装置 |
KR102580293B1 (ko) * | 2016-01-05 | 2023-09-19 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
JP6948788B2 (ja) * | 2016-12-15 | 2021-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6937644B2 (ja) * | 2017-09-26 | 2021-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7055054B2 (ja) * | 2018-04-11 | 2022-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
CN110714186A (zh) * | 2018-07-11 | 2020-01-21 | 君泰创新(北京)科技有限公司 | 一种阴极体组件、磁控溅射阴极及磁控溅射装置 |
CN109161842B (zh) * | 2018-08-09 | 2020-12-18 | 江西沃格光电股份有限公司 | 镀膜系统及镀膜玻璃的制造方法 |
JP7222848B2 (ja) * | 2019-08-26 | 2023-02-15 | 株式会社荏原製作所 | 電磁石制御装置および電磁石システム |
CN113005400A (zh) * | 2021-02-23 | 2021-06-22 | 京东方科技集团股份有限公司 | 吸附装置和蒸镀设备 |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824017A (en) * | 1973-03-26 | 1974-07-16 | Ibm | Method of determining the thickness of contiguous thin films on a substrate |
JPS5414953B2 (ja) * | 1973-04-13 | 1979-06-11 | ||
US4627904A (en) * | 1984-05-17 | 1986-12-09 | Varian Associates, Inc. | Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias |
US4727293A (en) * | 1984-08-16 | 1988-02-23 | Board Of Trustees Operating Michigan State University | Plasma generating apparatus using magnets and method |
US5215619A (en) * | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
US4957605A (en) * | 1989-04-17 | 1990-09-18 | Materials Research Corporation | Method and apparatus for sputter coating stepped wafers |
JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
JP2969529B2 (ja) | 1990-07-20 | 1999-11-02 | 日本真空技術株式会社 | プラズマエッチング装置 |
US5082542A (en) * | 1990-08-02 | 1992-01-21 | Texas Instruments Incorporated | Distributed-array magnetron-plasma processing module and method |
US5198725A (en) * | 1991-07-12 | 1993-03-30 | Lam Research Corporation | Method of producing flat ecr layer in microwave plasma device and apparatus therefor |
JP3037848B2 (ja) | 1992-04-17 | 2000-05-08 | 東京エレクトロン株式会社 | プラズマ発生装置およびプラズマ発生方法 |
JPH08288096A (ja) * | 1995-02-13 | 1996-11-01 | Mitsubishi Electric Corp | プラズマ処理装置 |
US5618758A (en) * | 1995-02-17 | 1997-04-08 | Sharp Kabushiki Kaisha | Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method |
US5589039A (en) * | 1995-07-28 | 1996-12-31 | Sony Corporation | In-plane parallel bias magnetic field generator for sputter coating magnetic materials onto substrates |
US6022446A (en) * | 1995-08-21 | 2000-02-08 | Shan; Hongching | Shallow magnetic fields for generating circulating electrons to enhance plasma processing |
US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
JP3499104B2 (ja) * | 1996-03-01 | 2004-02-23 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
JPH09266096A (ja) * | 1996-03-28 | 1997-10-07 | Hitachi Ltd | プラズマ処理装置及びこれを用いたプラズマ処理方法 |
KR0183844B1 (ko) * | 1996-04-30 | 1999-05-15 | 김광호 | 알에프 발생 장치 및 이를 이용한 펄스 플라즈마 형성 방법 |
JP4107518B2 (ja) * | 1996-07-03 | 2008-06-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6000360A (en) * | 1996-07-03 | 1999-12-14 | Tokyo Electron Limited | Plasma processing apparatus |
US6278519B1 (en) * | 1998-01-29 | 2001-08-21 | Therma-Wave, Inc. | Apparatus for analyzing multi-layer thin film stacks on semiconductors |
US5963329A (en) * | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6216632B1 (en) * | 1998-01-29 | 2001-04-17 | Anelva Corporation | Plasma processing system |
US6015476A (en) * | 1998-02-05 | 2000-01-18 | Applied Materials, Inc. | Plasma reactor magnet with independently controllable parallel axial current-carrying elements |
US6273022B1 (en) * | 1998-03-14 | 2001-08-14 | Applied Materials, Inc. | Distributed inductively-coupled plasma source |
US6197165B1 (en) * | 1998-05-06 | 2001-03-06 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
JP3375302B2 (ja) | 1998-07-29 | 2003-02-10 | 東京エレクトロン株式会社 | マグネトロンプラズマ処理装置および処理方法 |
JP2000200696A (ja) * | 1999-01-07 | 2000-07-18 | Matsushita Electric Ind Co Ltd | プラズマ制御方法と半導体製造装置 |
US6165567A (en) * | 1999-04-12 | 2000-12-26 | Motorola, Inc. | Process of forming a semiconductor device |
US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
US6462817B1 (en) * | 2000-05-12 | 2002-10-08 | Carlos Strocchia-Rivera | Method of monitoring ion implants by examination of an overlying masking material |
US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
KR100863098B1 (ko) * | 2000-09-01 | 2008-10-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 마그네트론 플라즈마용 자장 발생 장치, 이 자장 발생장치를 이용한 플라즈마 에칭 장치 및 방법 |
US6562190B1 (en) * | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
US6831742B1 (en) * | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
US20030024478A1 (en) * | 2001-08-06 | 2003-02-06 | Anelva Corporation | Surface processing apparatus |
US7199328B2 (en) * | 2001-08-29 | 2007-04-03 | Tokyo Electron Limited | Apparatus and method for plasma processing |
FR325790A (fr) * | 2002-03-28 | 1903-05-08 | Kempshall Eleazer | Balle perfectionnée pour le jeu de golf |
US6700090B2 (en) * | 2002-04-26 | 2004-03-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US7179754B2 (en) * | 2003-05-28 | 2007-02-20 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US6829056B1 (en) * | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
JP4527431B2 (ja) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
US7686926B2 (en) * | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
US20070051616A1 (en) * | 2005-09-07 | 2007-03-08 | Le Hienminh H | Multizone magnetron assembly |
JP5031252B2 (ja) | 2006-03-30 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8138445B2 (en) | 2006-03-30 | 2012-03-20 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US8268116B2 (en) * | 2007-06-14 | 2012-09-18 | Lam Research Corporation | Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber |
US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
US20080260966A1 (en) * | 2007-04-22 | 2008-10-23 | Applied Materials, Inc. | Plasma processing method |
US7972469B2 (en) * | 2007-04-22 | 2011-07-05 | Applied Materials, Inc. | Plasma processing apparatus |
JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP5037630B2 (ja) * | 2007-12-18 | 2012-10-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP5390846B2 (ja) * | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
JP5231308B2 (ja) * | 2009-03-31 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5649308B2 (ja) * | 2009-04-28 | 2015-01-07 | 株式会社神戸製鋼所 | 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法 |
JP6018757B2 (ja) * | 2012-01-18 | 2016-11-02 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6008771B2 (ja) * | 2013-01-21 | 2016-10-19 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
-
2012
- 2012-02-14 JP JP2012029860A patent/JP6009171B2/ja active Active
-
2013
- 2013-02-06 CN CN201310047993.3A patent/CN103247511B/zh active Active
- 2013-02-07 TW TW102104710A patent/TWI576913B/zh active
- 2013-02-14 KR KR1020130015821A patent/KR102049117B1/ko active IP Right Grant
- 2013-02-14 US US13/767,195 patent/US9390943B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130220547A1 (en) | 2013-08-29 |
CN103247511B (zh) | 2016-09-07 |
US9390943B2 (en) | 2016-07-12 |
TW201340207A (zh) | 2013-10-01 |
JP2013168449A (ja) | 2013-08-29 |
KR102049117B1 (ko) | 2019-11-26 |
KR20130093566A (ko) | 2013-08-22 |
CN103247511A (zh) | 2013-08-14 |
TWI576913B (zh) | 2017-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6009171B2 (ja) | 基板処理装置 | |
JP6284825B2 (ja) | プラズマ処理装置 | |
US10651012B2 (en) | Substrate processing method | |
US20130081761A1 (en) | Radical passing device and substrate processing apparatus | |
JP2005514762A (ja) | 加工物をプラズマ処理するための磁気フィルタを備える方法および装置 | |
JP2012160386A (ja) | イオン注入方法およびイオン注入装置 | |
KR20240014096A (ko) | 플라즈마 에칭 방법 | |
US20170186591A1 (en) | Cleaning method of plasma processing apparatus and plasma processing apparatus | |
KR20120027033A (ko) | 성막 장치 | |
JPWO2012011171A1 (ja) | エッチング装置 | |
JP4847671B2 (ja) | 誘導結合プラズマを用いて基板をエッチングする装置および方法 | |
KR100735747B1 (ko) | 플라즈마를 이용한 반도체 제조장치 | |
JP5306425B2 (ja) | マグネトロンプラズマ用磁場発生装置 | |
JP5306425B6 (ja) | マグネトロンプラズマ用磁場発生装置 | |
JP2018022899A (ja) | プラズマ処理装置及びプラズマ処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150911 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160330 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160830 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160914 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6009171 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |