DE69803713D1 - Herstellungsmethode eines Dünnfilm-Transistors - Google Patents

Herstellungsmethode eines Dünnfilm-Transistors

Info

Publication number
DE69803713D1
DE69803713D1 DE69803713T DE69803713T DE69803713D1 DE 69803713 D1 DE69803713 D1 DE 69803713D1 DE 69803713 T DE69803713 T DE 69803713T DE 69803713 T DE69803713 T DE 69803713T DE 69803713 D1 DE69803713 D1 DE 69803713D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69803713T
Other languages
English (en)
Other versions
DE69803713T2 (de
Inventor
Mamoru Furata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69803713D1 publication Critical patent/DE69803713D1/de
Application granted granted Critical
Publication of DE69803713T2 publication Critical patent/DE69803713T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE69803713T 1997-04-08 1998-04-07 Herstellungsmethode eines Dünnfilm-Transistors Expired - Fee Related DE69803713T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08856397A JP3274081B2 (ja) 1997-04-08 1997-04-08 薄膜トランジスタの製造方法および液晶表示装置の製造方法

Publications (2)

Publication Number Publication Date
DE69803713D1 true DE69803713D1 (de) 2002-03-21
DE69803713T2 DE69803713T2 (de) 2002-05-29

Family

ID=13946345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803713T Expired - Fee Related DE69803713T2 (de) 1997-04-08 1998-04-07 Herstellungsmethode eines Dünnfilm-Transistors

Country Status (7)

Country Link
US (1) US6034748A (de)
EP (1) EP0871227B1 (de)
JP (1) JP3274081B2 (de)
KR (1) KR19980081122A (de)
CN (1) CN1198596A (de)
DE (1) DE69803713T2 (de)
TW (1) TW423159B (de)

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JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6777254B1 (en) 1999-07-06 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP3983460B2 (ja) * 1999-07-06 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6952020B1 (en) 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
GB2358082B (en) * 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
GB2358083B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
US6521492B2 (en) * 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
KR100698238B1 (ko) * 2000-08-26 2007-03-21 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
JP3522216B2 (ja) * 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP4037117B2 (ja) * 2001-02-06 2008-01-23 株式会社日立製作所 表示装置
CN100463225C (zh) * 2001-02-06 2009-02-18 株式会社日立制作所 显示装置及其制造方法
JP2002313804A (ja) * 2001-04-16 2002-10-25 Sharp Corp 半導体装置およびその製造方法
US6906344B2 (en) 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
KR100477103B1 (ko) 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
KR100477102B1 (ko) 2001-12-19 2005-03-17 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
KR100532082B1 (ko) * 2001-12-28 2005-11-30 엘지.필립스 엘시디 주식회사 다결정 박막트랜지스터 및 그 제조방법
KR100462862B1 (ko) * 2002-01-18 2004-12-17 삼성에스디아이 주식회사 티에프티용 다결정 실리콘 박막 및 이를 이용한디스플레이 디바이스
KR100485531B1 (ko) * 2002-04-15 2005-04-27 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터와 그 제조방법
CN100367103C (zh) * 2002-04-16 2008-02-06 夏普株式会社 基片、具有该基片的液晶显示器及其制造方法
KR100454751B1 (ko) * 2002-10-21 2004-11-03 삼성에스디아이 주식회사 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법
US7145209B2 (en) * 2003-05-20 2006-12-05 Tpo Displays Corp. Thin film transistor and fabrication method thereof
JP2005043672A (ja) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法
KR100514181B1 (ko) * 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
CN100392868C (zh) * 2003-10-17 2008-06-04 统宝光电股份有限公司 薄膜晶体管结构
US7453531B2 (en) * 2003-11-22 2008-11-18 Lg Display Co., Ltd. LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
KR100623248B1 (ko) * 2004-02-17 2006-09-18 삼성에스디아이 주식회사 Ｌｄｄ 영역을 포함하는 ｐｍｏｓ 박막트랜지스터 및 이의제조방법
TWI268617B (en) * 2005-08-26 2006-12-11 Chunghwa Picture Tubes Ltd Thin film transistor
KR101056431B1 (ko) 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
CN102082181B (zh) * 2010-12-15 2013-01-02 四川虹视显示技术有限公司 一种有机发光器件像素电路的薄膜晶体管结构
JP2014165310A (ja) * 2013-02-25 2014-09-08 Japan Display Inc 表示装置
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
CN104282696B (zh) * 2014-10-22 2018-07-13 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN104779167A (zh) 2015-04-09 2015-07-15 京东方科技集团股份有限公司 多晶硅薄膜晶体管及其制备方法、阵列基板、显示面板
CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN104952934B (zh) * 2015-06-25 2018-05-01 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板
CN109950283B (zh) * 2019-03-25 2021-11-19 昆山国显光电有限公司 一种显示驱动模组、显示面板及显示驱动模组的制备方法

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JP3072655B2 (ja) * 1991-05-21 2000-07-31 ソニー株式会社 アクティブマトリクス表示装置
JPH05121439A (ja) * 1991-10-25 1993-05-18 Sharp Corp 薄膜トランジスタの製造方法
EP0589478B1 (de) * 1992-09-25 1999-11-17 Sony Corporation Flüssigkristall-Anzeigevorrichtung
JP2935083B2 (ja) * 1992-10-22 1999-08-16 カシオ計算機株式会社 薄膜トランジスタの製造方法
JPH06301056A (ja) * 1993-04-15 1994-10-28 Seiko Epson Corp 薄膜半導体装置の製造方法
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
JP3184771B2 (ja) * 1995-09-14 2001-07-09 キヤノン株式会社 アクティブマトリックス液晶表示装置
JP3409542B2 (ja) * 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP3274081B2 (ja) 2002-04-15
EP0871227A3 (de) 1999-12-08
JPH10284734A (ja) 1998-10-23
CN1198596A (zh) 1998-11-11
TW423159B (en) 2001-02-21
EP0871227B1 (de) 2002-02-06
EP0871227A2 (de) 1998-10-14
DE69803713T2 (de) 2002-05-29
US6034748A (en) 2000-03-07
KR19980081122A (ko) 1998-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD, JP

8339 Ceased/non-payment of the annual fee