NO985623L - Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme - Google Patents

Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme

Info

Publication number
NO985623L
NO985623L NO985623A NO985623A NO985623L NO 985623 L NO985623 L NO 985623L NO 985623 A NO985623 A NO 985623A NO 985623 A NO985623 A NO 985623A NO 985623 L NO985623 L NO 985623L
Authority
NO
Norway
Prior art keywords
thin film
film transistor
making same
making
same
Prior art date
Application number
NO985623A
Other languages
English (en)
Other versions
NO985623D0 (no
Inventor
Hitoshi Oka
Yutaka Ito
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of NO985623D0 publication Critical patent/NO985623D0/no
Publication of NO985623L publication Critical patent/NO985623L/no

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
NO985623A 1997-12-04 1998-12-02 Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme NO985623L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9333883A JPH11168216A (ja) 1997-12-04 1997-12-04 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
NO985623D0 NO985623D0 (no) 1998-12-02
NO985623L true NO985623L (no) 1999-06-07

Family

ID=18271027

Family Applications (1)

Application Number Title Priority Date Filing Date
NO985623A NO985623L (no) 1997-12-04 1998-12-02 Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme

Country Status (4)

Country Link
US (1) US6184541B1 (no)
EP (1) EP0921576A3 (no)
JP (1) JPH11168216A (no)
NO (1) NO985623L (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
KR100483985B1 (ko) * 2001-11-27 2005-04-15 삼성에스디아이 주식회사 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스
KR100501700B1 (ko) 2002-12-16 2005-07-18 삼성에스디아이 주식회사 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터
TW200537573A (en) * 2004-04-23 2005-11-16 Ulvac Inc Thin-film transistor and production method thereof
KR102044667B1 (ko) * 2013-05-28 2019-11-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05308081A (ja) 1992-04-30 1993-11-19 Toshiba Corp 多結晶シリコン薄膜トランジスタおよびその製造方法
JPH098314A (ja) 1995-06-26 1997-01-10 Sharp Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
EP0921576A3 (en) 1999-11-03
NO985623D0 (no) 1998-12-02
US6184541B1 (en) 2001-02-06
EP0921576A2 (en) 1999-06-09
JPH11168216A (ja) 1999-06-22

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application