KR970704918A - 단결정 제조장치 및 제조방법 - Google Patents

단결정 제조장치 및 제조방법

Info

Publication number
KR970704918A
KR970704918A KR1019960706751A KR19960706751A KR970704918A KR 970704918 A KR970704918 A KR 970704918A KR 1019960706751 A KR1019960706751 A KR 1019960706751A KR 19960706751 A KR19960706751 A KR 19960706751A KR 970704918 A KR970704918 A KR 970704918A
Authority
KR
South Korea
Prior art keywords
manufacturing
single crystal
manufacturing device
crystal manufacturing
crystal
Prior art date
Application number
KR1019960706751A
Other languages
English (en)
Other versions
KR100415860B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970704918A publication Critical patent/KR970704918A/ko
Application granted granted Critical
Publication of KR100415860B1 publication Critical patent/KR100415860B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019960706751A 1995-12-08 1995-12-08 단결정제조장치및제조방법 KR100415860B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1995/002514 WO1997021853A1 (fr) 1995-12-08 1995-12-08 Appareil de production de monocristaux et processus s'y rapportant

Publications (2)

Publication Number Publication Date
KR970704918A true KR970704918A (ko) 1997-09-06
KR100415860B1 KR100415860B1 (ko) 2004-06-04

Family

ID=14126518

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960706751A KR100415860B1 (ko) 1995-12-08 1995-12-08 단결정제조장치및제조방법

Country Status (8)

Country Link
US (1) US5972106A (ko)
EP (1) EP0867531B1 (ko)
JP (1) JP3634867B2 (ko)
KR (1) KR100415860B1 (ko)
DE (1) DE69533114T2 (ko)
MY (1) MY132365A (ko)
TW (1) TW400398B (ko)
WO (1) WO1997021853A1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100571573B1 (ko) * 2003-12-02 2006-04-14 주식회사 실트론 실리콘 단결정 잉곳의 제조 장치, 그 장치를 이용한 제조방법, 그로부터 제조된 실리콘 단결정 잉곳 및 실리콘웨이퍼
KR100671287B1 (ko) * 2005-02-26 2007-01-19 네오세미테크 주식회사 비소 원료 장입장치

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* Cited by examiner, † Cited by third party
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US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
DE19756613A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
JP4467096B2 (ja) * 1998-09-14 2010-05-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶製造方法および半導体形成用ウェハ
US6197111B1 (en) 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
EP1182281A4 (en) * 2000-01-31 2009-03-04 Shinetsu Handotai Kk SINGLE CRYSTAL DEVICE AND METHOD OF PRODUCING A CRYSTAL WITH THE SAID DEVICE AND CRYSTAL
JP4788029B2 (ja) * 2000-08-31 2011-10-05 信越半導体株式会社 半導体単結晶の製造装置及びそれを用いた半導体単結晶の製造方法
US6482263B1 (en) 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US7797966B2 (en) 2000-12-29 2010-09-21 Single Crystal Technologies, Inc. Hot substrate deposition of fused silica
US6797062B2 (en) 2002-09-20 2004-09-28 Memc Electronic Materials, Inc. Heat shield assembly for a crystal puller
WO2004061166A1 (ja) 2002-12-27 2004-07-22 Shin-Etsu Handotai Co., Ltd. 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法
US7427325B2 (en) * 2005-12-30 2008-09-23 Siltron, Inc. Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
JP5092940B2 (ja) 2008-07-01 2012-12-05 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
JP5040848B2 (ja) * 2008-08-04 2012-10-03 株式会社Ｓｕｍｃｏ シリコン単結晶製造装置
JP5439972B2 (ja) * 2009-06-19 2014-03-12 株式会社Ｓｕｍｃｏ 大口径シリコン単結晶の製造方法
KR101218852B1 (ko) * 2010-01-05 2013-01-18 주식회사 엘지실트론 단결정 성장장치의 단열장치 및 이를 포함하는 단결정 성장장치
CN105189833A (zh) * 2013-03-13 2015-12-23 先进可再生能源有限公司 使用用于石墨热区的部件的锅炉
JP5892232B1 (ja) * 2014-12-24 2016-03-23 株式会社Sumco 単結晶の製造方法およびシリコンウェーハの製造方法
CN111876822A (zh) * 2020-07-01 2020-11-03 中国科学院上海微系统与信息技术研究所 一种用于单晶硅生长炉的热屏及单晶硅生长炉
CN111926379A (zh) * 2020-07-01 2020-11-13 中国科学院上海微系统与信息技术研究所 一种热屏障装置及熔炼炉
CN111893561B (zh) * 2020-07-01 2021-08-17 中国科学院上海微系统与信息技术研究所 一种用于单晶硅生长炉的复合隔热结构及单晶硅生长炉
CN111763985B (zh) * 2020-07-01 2021-10-19 中国科学院上海微系统与信息技术研究所 一种用于单晶生产炉的热屏结构及单晶生产炉
CN111926380B (zh) * 2020-07-01 2021-10-19 中国科学院上海微系统与信息技术研究所 一种用于单晶生产炉的热屏装置、控制方法及单晶生产炉
CN111893558B (zh) * 2020-07-01 2021-08-17 中国科学院上海微系统与信息技术研究所 一种用于单晶硅生长炉的薄膜隔热片及单晶硅生长炉
CN111893557A (zh) * 2020-07-01 2020-11-06 中国科学院上海微系统与信息技术研究所 一种用于隔绝热量的热屏障装置及熔炼炉
CN115216835B (zh) * 2022-07-22 2024-03-15 中环领先(徐州)半导体材料有限公司 获取晶棒热历史的方法和单晶炉

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JPS62138386A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 単結晶の引上装置
JPS63315589A (ja) * 1987-06-16 1988-12-23 Osaka Titanium Seizo Kk 単結晶製造装置
JP2709310B2 (ja) * 1989-11-11 1998-02-04 住友シチックス株式会社 単結晶引上げ装置
JP2620999B2 (ja) * 1991-10-17 1997-06-18 信越半導体株式会社 単結晶引上装置
JP2940892B2 (ja) * 1992-06-03 1999-08-25 三菱マテリアル株式会社 単結晶引上装置
JPH0648884A (ja) * 1992-07-29 1994-02-22 Kawasaki Steel Corp シリコン単結晶の引上装置
JP2720262B2 (ja) * 1992-10-26 1998-03-04 科学技術振興事業団 単結晶引上げ装置
JP2820002B2 (ja) * 1993-09-01 1998-11-05 信越半導体株式会社 単結晶引上装置
JPH0859386A (ja) * 1994-08-22 1996-03-05 Mitsubishi Materials Corp 半導体単結晶育成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100571573B1 (ko) * 2003-12-02 2006-04-14 주식회사 실트론 실리콘 단결정 잉곳의 제조 장치, 그 장치를 이용한 제조방법, 그로부터 제조된 실리콘 단결정 잉곳 및 실리콘웨이퍼
KR100671287B1 (ko) * 2005-02-26 2007-01-19 네오세미테크 주식회사 비소 원료 장입장치

Also Published As

Publication number Publication date
JP3634867B2 (ja) 2005-03-30
EP0867531A1 (en) 1998-09-30
KR100415860B1 (ko) 2004-06-04
TW400398B (en) 2000-08-01
MY132365A (en) 2007-10-31
DE69533114T2 (de) 2005-06-09
DE69533114D1 (de) 2004-07-08
EP0867531B1 (en) 2004-06-02
EP0867531A4 (en) 1999-03-03
US5972106A (en) 1999-10-26
WO1997021853A1 (fr) 1997-06-19

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