EP0871227A2 - Dünnfilm-Transistor, dessen Herstellungsmethode und dessen Verwendung in einer Flüssigkeitskristallanzeige - Google Patents

Dünnfilm-Transistor, dessen Herstellungsmethode und dessen Verwendung in einer Flüssigkeitskristallanzeige Download PDF

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EP0871227A2
EP0871227A2 EP98106371A EP98106371A EP0871227A2 EP 0871227 A2 EP0871227 A2 EP 0871227A2 EP 98106371 A EP98106371 A EP 98106371A EP 98106371 A EP98106371 A EP 98106371A EP 0871227 A2 EP0871227 A2 EP 0871227A2
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thin film
polycrystalline silicon
implanted
region
impurity
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French (fr)
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EP0871227B1 (de
EP0871227A3 (de
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Mamoru Furata
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Definitions

  • the present invention relates to an Lightly-Doped-Drain structure (hereinafter, abbreviated to LDD structure) for the purpose of reducing leakage current in a polycrystalline silicon thin-film transistor (hereinafter, abbreviated to TFT) and a manufacturing method therefor, whose technique is applicable to a liquid crystal display unit or the like.
  • LDD structure Lightly-Doped-Drain structure
  • TFT polycrystalline silicon thin-film transistor
  • the LDD structure is proposed.
  • a structure in which LDD structures are connected in series is also proposed. A description on this technique is found, for example, in International Display Research Conference '93, p. 465.
  • FIGS. 5a to 5d show a method for manufacturing a conventional TFT in which LDD structures are connected in series.
  • an amorphous silicon thin-film is formed on a light-transmittal glass substrate 11 (highly heat-resistant glass substrate) by the plasma chemical vapor deposition (PCVD) method and is subjected to thermal treatment at 600°C to form a polycrystalline silicon thin-film 13 serving as an active layer.
  • PCVD plasma chemical vapor deposition
  • This polycrystalline silicon thin-film is machined into the shape of isles and a silicon oxide thin-film serving as a gate insulating film 14a is formed thereon in a thickness of 85 nm.
  • a silicon oxide thin-film serving as a gate insulating film 14a is formed thereon in a thickness of 85 nm.
  • two gate electrodes 15 are formed on this silicon oxide thin-film.
  • a first impurity is implanted with the gate electrodes 15 employed as masks by the ion plantation method to form an implanted region (n- region) 13b of the lower-concentration impurity.
  • phosphorus (P) ions are implanted under an acceleration voltage of 80 kV in a dose amount of 1 x 10 13 /cm 2 .
  • the polycrystalline silicon thin-film below the gate electrodes 15 serves as the channel region 13a of the TFT.
  • an implantation mask using a photoresist is formed on the LDD region of the TFT with the aid of a photoresist 25 as shown in FIG. 5b and then a second impurity is implanted to form an implanted region (n+ region) 13c of the higher-concentration impurity serving as the source and drain regions of the TFT.
  • an opening is provided also on the polycrystalline silicon region between the gate electrodes and the resist mask is formed in such a shape that the thin polycrystalline silicon films between the electrodes of each gates are connected via both of the implanted region 13b of the lower-concentration impurity and the implanted region 13c of the higher-concentration impurity.
  • phosphorus (P) ions are implanted under an acceleration voltage of 80 kV in a dose amount of 1 x 10 15 /cm 2 .
  • the photoresist mask is removed and the activation treatment of the implanted impurity is given at 900°C for 2 hours.
  • an inter-layer insulating film 16 is formed as shown in FIG. 5c.
  • source and drain electrodes 21 and 22 are formed after boring the respective contact holes, and a TFT is completed.
  • the TFT explained in the conventional example has the implanted region 13c of the higher-concentration impurity equal in concentration to the source and drain regions between the electrodes of each gates. For this reason, an opening needs to be formed in the doping mask at the forming time of the source and drain regions of the TFTs connected in series, i.e., photoresist 25, as shown in FIG. 5b.
  • the length of the implanted region 13b of the lower-concentration impurity between the electrodes of each gates is restricted by the value given by adding the mask focusing accuracy of the exposer to the design size.
  • Wa ( ⁇ m), Ld ( ⁇ m) and La ( ⁇ m) be the minimum exposure width of the exposer in a TFT having a series-connected construction of TFTs having the LDD structure, the design length of the lower-concentration impurity implanted region, and the focusing accuracy of the exposer, respectively, it is difficult to make the minimum size of each TFT not greater than Wa + 2Ld + La .
  • a case of employing such an element as the switching element of a liquid crystal display unit causes a reduction in the opening ratio of the liquid crystal display unit, thus posing problems such as a lowering in luminosity or an increase in consumed power.
  • TFTs having an LDD structure it is an object of the present invention to provide a TFT capable of making the element minute while reducing the leakage current of the TFT, a manufacturing method therefor, and a liquid crystal display unit.
  • the present invention provides a TFT having a polycrystalline silicon thin film employed as an active layer and a plurality of gate electrodes provided in one TFT, wherein low-concentration impurity implanted regions are provided between a channel region and source and drain regions of the TFT, and polycrystalline silicon thin films between each gate electrodes are connected only by low-concentration impurity implanted regions.
  • the present invention provides a TFT having a polycrystalline silicon thin film employed as the active layer, a gate insulating film provided on the polycrystalline silicon thin film, and a plurality of gate electrodes provided on the gate insulating film, wherein in forming an LDD structure with low-concentration impurity implanted regions provided between the channel region and the source and drain regions, the first impurity is implanted with the gate electrode employed as a mask, thereafter an implantation mask is formed on a region serving as the LDD region including the polycrystalline silicon region between gate electrodes, and thus a second impurity is implanted.
  • the present invention provides a TFT having a polycrystalline silicon thin film employed as the active layer, a gate insulating film provided on the polycrystalline silicon thin film, and a plurality of gate electrodes provided on the gate insulating film, wherein in forming an LDD structure with implanted regions of a low-concentration impurity between the channel region and the source and drain regions, a single-time implantation of an impurity is carried out with the gate electrodes employed as mask after stacking a foreign insulating film on the polycrystalline silicon thin film, the upper layer insulating film of the above gate insulating film is removed at least on the source and drain regions, and the insulating film is machined into such a shape as to cover the low-concentration impurity region and the polycrystalline silicon between each gate electrodes.
  • the present invention provides an active matrix array for a liquid crystal display unit with a polycrystalline silicon thin film employed as the active layer and a drive circuit integrated in one same substrate, comprising a plurality of gate electrodes at least for a TFT for driving pixel electrodes, and an LDD structure with implanted regions of a low-concentration impurity between the channel region and the source and drain regions of the above TFT, wherein the polycrystalline silicon thin film between each gate electrodes is connected by the implanted region of a low-concentration impurity.
  • the TFT of the present invention relates to a TFT having a polycrystalline silicon thin-film employed as the active layer, and a plurality of gate electrodes provided in one transistor, characterized in that implanted polycrystalline sylicon regions between a channel region and source and drain regions of the TFT are implanted with an impurity at a lower concentration than the above source and drain regions, and the polycrystalline silicon thin-films between each gate electrodes are formed only of the above implanted polycrystalline silicon thin-films implanted with an impurity at a lower concentration.
  • the size between each gate electrodes can be defined only by the minimum line width of an exposer, and both reduction in element size and decrease in leakage current can be realized.
  • the TFT according to the present invention is featured by the sheet resistance of an implanted polycrystalline silicon thin-film implanted with an impurity at a low concentration being preferably 5 k ⁇ - 150 k ⁇ .
  • the TFT according to the present invention is featured by the total length of all the polycrystalline silicon thin-films implanted with a low-concentration impurity included between the source and drain regions ranging from 6 ⁇ m to 12 ⁇ m in the longitudinal direction of the channel of the TFT.
  • a method for manufacturing the TFT according to the present invention is featured by comprising the steps of: after implanting the first impurity, forming an implantation mask on regions serving as the LDD region including the region above the polycrystalline silicon region between the gate electrodes; and by implanting a second impurity, forming an implanted region of a high-concentration impurity serving as the source and drain regions of the TFT.
  • the method for manufacturing the TFT according to the present invention is featured by comprising the steps of: stacking a foreign gate insulating film on the polycrystalline silicon thin-film; removing the upper layer insulating film of the above gate insulating film at least on the source and drain regions; machining said insulating film in such a shape as to cover the low-concentration impurity region and the polycrystalline silicon film between each gate electrodes; thereafter forming the source and drain regions of the TFT and the implanted region of a low-concentration impurity by a single-time implantation of the impurity; and after implanting the impurity, removing an upper layer gate insulating film covering the low
  • a liquid crystal display unit using an active matrix array according to the present invention is featured in that the active matrix array having a polycrystalline silicon thin film employed as the active layer and a drive circuit integrated in one same substrate comprises: a plurality of gate electrodes at least for a TFT for driving the pixel electrodes; an LDD structure with implanted regions of a low-concentration impurity between the channel region and the source and drain regions of the above TFT; and the polycrystalline silicon thin film between the electrodes of each gates which is formed only of an implanted region of a low-concentration impurity.
  • FIGS. 1a to 1d are sectional views of TFTs according to Embodiment 1 of the present invention.
  • FIGS. 2a to 2d are sectional views of TFTs according to Embodiment 2 of the present invention.
  • FIGS. 3a to 3d are sectional views of active matrix arrays for a liquid crystal display unit according to Embodiment 3 of the present invention.
  • FIG. 4 is a sectional view of the liquid crystal display unit using the active matrix array according to Embodiment 3 of the present invention.
  • FIGS. 5a to 5d are sectional views of conventional TFTs.
  • FIGS. 1a to 1d show the manufacturing steps of a TFT with the LDD structure of Embodiment 1 of the present invention.
  • an amorphous silicon thin film is formed on a glass substrate 11 surface-coated with silicon oxide in a thickness of 50 nm by the plasma CVD method.
  • the amorphous silicon thin film After being subjected to heat treatment in nitrogen under 450°C for 90 minutes to reduce the hydrogen concentration in the film, the amorphous silicon thin film is crystallized by the excimer laser irradiation to form a polycrystalline silicon thin film 13 serving as the active layer.
  • This polycrystalline silicon thin film 13 is machined into the shape of a TFT, and a silicon oxide film is formed thereon in a thickness of 85 nm to serve as a gate insulating film 14a.
  • the gate electrode 15 On this silicon oxide film, two gate electrodes 15 connected electrically are formed. Each inter-electrode distance is formed to be a minimum line width of 5 ⁇ m of the exposer.
  • the gate electrode 15 comprises an 80 nm thick titanium (Ti) so formed as to come into contact with the silicon oxide film, and a 100 nm aluminum (Al) alloy containing 7.4 % of zirconium (Zr) on the titanium film in a total thickness of 180 nm.
  • a first impurity implantation is carried out for implanting phosphorus (P) at an acceleration voltage of 80 kV in an implantation dose amount of 1 x 10 13 /cm 2 with the gate electrode 15 employed as a mask by the ion doping method so as to form an implanted region (n- region) 13b of the lower-concentration impurity.
  • a gas mixture of hydrogen gas and PH 3 of 5 % concentration is subjected to plasma decomposition by high-frequency discharge, and the generated ions are implanted into a TFT without a mass separation process.
  • the polycrystalline silicon thin film below the gate electrode 15 serves as the channel region 13a of the TFT.
  • an implantation mask is formed on the LDD region of the TFT by using a photoresist 25 as described in FIG. 1b and thereafter a second impurity is implanted to form an implanted region (n+ region) 13c of the higher-concentration impurity serving as the source and drain regions of the TFT.
  • a second impurity is implanted to form an implanted region (n+ region) 13c of the higher-concentration impurity serving as the source and drain regions of the TFT.
  • phosphorus (P) ions are implanted at an acceleration voltage of 80 kV in a dose amount of 1 x 10 15 /cm 2 .
  • the resist mask is so formed as to completely cover the top of the polycrystalline silicon region between each gate electrodes.
  • the polycrystalline silicon thin film between each gate electrodes is formed in such a shape as to be connected only through the implanted region 13b of the lower-concentration impurity.
  • the photoresist mask is removed as shown in FIG. 1c to perform an activation treatment of the implanted impurity.
  • an inter-layer insulating film 16 is formed as shown in FIG. 1d.
  • the source and drain electrodes 21 and 22 are formed, thus completing a TFT.
  • FIGS. 2a to 2d show the manufacturing steps of a TFT having the LDD structure of Embodiment 2 of the present invention.
  • an amorphous silicon thin film is formed on a glass substrate 11 surface-coated with silicon oxide in a thickness of 50 nm by the plasma CVD method. After being subjected to heat treatment in nitrogen under 450°C for 90 minutes to reduce the hydrogen concentration in the film, the amorphous silicon film is crystallized by the excimer laser annealing to form a thin polycrystalline silicon film 13 serving as the active layer.
  • This polycrystalline silicon thin film 13 is machined into the shape of a TFT to form thereon a silicon oxide film serving as the gate insulating film 14a in a thickness of 85 nm.
  • a tantalum oxide film serving as a second gate insulating film 14b is formed in a thickness of 50 nm.
  • two gate electrodes 15 are formed on the tantalum oxide film.
  • the gate electrode 15 comprises an 80 nm thick titanium (Ti) so formed as to come into contact with the tantalum oxide film and a 100 nm aluminum (Al) alloy containing 7.4 % of zirconium (Zr) on the titanium film in a total thickness of 180 nm.
  • the dual gate electrode After the formation of the dual gate electrode, only the region above the LDD regions and between both electrodes of the TFT is coated with tantalum oxide, and the tantalum oxide films above the source and drain regions are selectively removed.
  • phosphorus (P) is implanted at an acceleration voltage of 80 kV in an implantation dose amount of 1 x 10 15 /cm 2 by the ion doping method as shown in FIG. 2b.
  • a gas mixture of hydrogen gas and PH 3 of 5 % concentration is subjected to plasma decomposition by high-frequency discharge and the generated ions are implanted into a TFT without a mass separation process.
  • phosphorus ions are implanted through the monolayer silicon oxide film in the source and drain regions of the TFT, and through the laminate film of tantalum oxide and silicon oxide in the LDD regions and the region between each gate electrodes.
  • the implantation amount decreases as compared with the regions implanted through the monolayer silicon oxide film, i.e., the source and drain regions of the TFT.
  • both of the source and drain regions corresponding to the implanted region 13c of the higher-concentration impurity and the LDD regions corresponding to the implanted region 13b of the lower-concentration impurity are formed simultaneously.
  • each gate electrodes of the TFT are connected by the implanted region 13b of the low-concentration impurity comprising a polycrystalline silicon thin film implanted with the low-concentration impurity of the same concentration as with the LDD regions.
  • the polycrystalline silicon thin films below the gate electrodes 15 serve as the channel region 13a of the TFT.
  • the tantalum oxide thin film is removed on the LDD regions as shown in FIG. 2c.
  • the inter-layer insulating film 16 made of silicon oxide is formed as shown in FIG. 2d. Silicon oxide is formed at 430°C by the normal pressure CVD method, and the impurity implanted simultaneously in this process can be activated. Finally, after boring a contact hole, the source and drain electrodes 21 and 22 are formed, thus completing a TFT.
  • FIGS. 3a to 3d show the manufacturing steps of an active matrix array for a liquid crystal display unit according to Embodiment 3 of the present invention.
  • an amorphous silicon thin film is formed on a glass substrate 11 surface-coated with silicon oxide in a thickness of 50 nm by the plasma CVD method. After being subjected to heat treatment in nitrogen under 450°C for 90 minutes to reduce the hydrogen concentration in the film, the amorphous silicon film is crystallized by the excimer laser annealing to form a polycrystalline silicon thin film 13.
  • the polycrystalline silicon thin film 13 is machined into the shape of a TFT to form a silicon oxide film serving as the gate insulating film 14a in a thickness of 85 nm.
  • a tantalum oxide film serving as a second gate insulating film 14b is formed in a thickness of 50 nm.
  • gate electrodes 15 are formed on a p-channel TFT.
  • the gate electrode 15 comprises an 80 nm thick titanium (Ti) film so formed as to come into contact with the tantalum oxide film and a 150 nm aluminum (Al) alloy film containing 7.4 % of zirconium (Zr) on the titanium film in a total thickness of 230 nm.
  • a gate electrode material is coated on the n-channel TFT.
  • boron (B) is implanted into the source and drain regions of the p-channel TFT. Boron implantation proceeds at an acceleration voltage of 60 kV in a dose amount of 5 x 10 15 /cm 2 by using the ion doping method.
  • a gate electrode 15 is formed on the n-channel TFT as shown in FIG. 3b.
  • the gate electrode of a pixel TFT is of a dual gate construction, and the tantalum oxide films above the source and drain regions are selectively removed with the tantalum oxide films above the LDD region and between each gate electrodes of the pixel TFT being left as they are.
  • phosphorus (P) is implanted at an acceleration voltage of 80 kV in an implantation dose amount of 1 x 10 15 /cm 2 by the ion doping method.
  • each gate electrodes of a pixel TFT are connected by the polycrystalline silicon thin film into which a low-concentration impurity identical in concentration to that in the LDD regions is implanted.
  • the thin tantalum oxide films above the LDD regions and between each gate electrodes are removed using the gate electrodes as a mask. This tantalum oxide removal process enables the OFF current of the TFT to be greatly reduced.
  • a first inter-layer insulating film 16 comprising silicon oxide is formed.
  • the silicon oxide is formed at 430°C by using the normal pressure CVD method, and the impurity implanted simultaneously in this process can be activated.
  • a pixel electrode 18 comprising an ITO (Indium-Tin-Oxide) film is formed, and a second inter-layer insulating layer 17 comprising silicon oxide is formed.
  • the source and drain electrodes 21 and 22 are formed as shown in FIG. 3d. Further, after a silicon nitride film serving as the protective film 23 is formed by the plasma CVD and subjected to a 350°C annealing in the atmosphere of hydrogen, the silicon nitride and silicon oxide laminate films above the pixel electrode 18 are selectively removed to complete an active matrix array.
  • FIG. 4 is one example of a sectional constitution view of a liquid crystal display unit fabricated by using an active matrix array shown in FIGS. 3a to 3d, which represents the pixel section in an enlarged view.
  • liquid crystals 47 are retained via oriented films 46, and a pixel electrode 18 is driven by using a TFT as the switching element to charge the liquid crystals and thus the image display is carried out.
  • this liquid crystal display unit is capable of making the element minute and improving the opening ratio of the liquid crystal display unit.
  • numerals 41, 42, 44 and 45 denote a black matrix, a deflecting plate, a color filter and a transparent conductive layer, respectively.
  • the LDD structure may be employed also at least in part of an n-channel TFT in the drive circuit section.
  • the LDD structure allows effective improvement especially in reliability of the TFT.
  • both the decrease in leakage current of the TFT and the reduction in element size can be implemented by connecting the electrodes of each gates only by a low-concentration impurity region preferably having a sheet resistance of 5 k ⁇ - 150 k ⁇ as described above.
  • the size of distance between each gate electrodes in the TFT is determined only by the minimum line width of an exposer and can be made to be 5 ⁇ m, thereby realizing the reduction of the element size to be 50% that of a conventional example, that is 10 ⁇ m.
  • the element size of the TFT driving a pixel electrode can be reduced, as well as the effect of increasing luminosity accompanying the improvement in resolving power and opening ratio and the effect of reducing consumed power can be achieved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
EP98106371A 1997-04-08 1998-04-07 Herstellungsmethode eines Dünnfilm-Transistors Expired - Lifetime EP0871227B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88563/97 1997-04-08
JP08856397A JP3274081B2 (ja) 1997-04-08 1997-04-08 薄膜トランジスタの製造方法および液晶表示装置の製造方法
JP8856397 1997-04-08

Publications (3)

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EP0871227A2 true EP0871227A2 (de) 1998-10-14
EP0871227A3 EP0871227A3 (de) 1999-12-08
EP0871227B1 EP0871227B1 (de) 2002-02-06

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Country Status (7)

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US (1) US6034748A (de)
EP (1) EP0871227B1 (de)
JP (1) JP3274081B2 (de)
KR (1) KR19980081122A (de)
CN (1) CN1198596A (de)
DE (1) DE69803713T2 (de)
TW (1) TW423159B (de)

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GB2358083A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Thin film transistors
GB2358082A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Split gate thin film semiconductor transistor
EP1331660A2 (de) * 2002-01-18 2003-07-30 Samsung SDI Co., Ltd. Polykristalline dünne Siliziumschicht für Dünnfilmtransistor und diese verwendende Anzeigevorrichtung
EP1414062A2 (de) * 2002-10-21 2004-04-28 Samsung SDI Co., Ltd. Herstellungsverfahren für Dünnfilm-Transistor mit doppelten oder mehrfachen Gates
GB2429580A (en) * 2005-08-26 2007-02-28 Chunghwa Picture Tubes Ltd Asymmetric double gate thin film transistor
US7348599B2 (en) 1999-07-06 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7365393B2 (en) 1999-02-23 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
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JP3983460B2 (ja) * 1999-07-06 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6777254B1 (en) 1999-07-06 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6521492B2 (en) * 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
KR100698238B1 (ko) * 2000-08-26 2007-03-21 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
JP3522216B2 (ja) * 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP4037117B2 (ja) * 2001-02-06 2008-01-23 株式会社日立製作所 表示装置
CN100523966C (zh) * 2001-02-06 2009-08-05 株式会社日立制作所 显示装置及其制造方法
JP2002313804A (ja) * 2001-04-16 2002-10-25 Sharp Corp 半導体装置およびその製造方法
US6906344B2 (en) * 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
KR100477103B1 (ko) 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
KR100477102B1 (ko) 2001-12-19 2005-03-17 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
KR100532082B1 (ko) * 2001-12-28 2005-11-30 엘지.필립스 엘시디 주식회사 다결정 박막트랜지스터 및 그 제조방법
KR100485531B1 (ko) * 2002-04-15 2005-04-27 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터와 그 제조방법
WO2003088193A1 (fr) * 2002-04-16 2003-10-23 Sharp Kabushiki Kaisha Substrat, affichage a cristaux liquides comprenant ce substrat et procede de production du substrat
US7145209B2 (en) * 2003-05-20 2006-12-05 Tpo Displays Corp. Thin film transistor and fabrication method thereof
JP2005043672A (ja) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法
KR100514181B1 (ko) * 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
CN100392868C (zh) * 2003-10-17 2008-06-04 统宝光电股份有限公司 薄膜晶体管结构
US7453531B2 (en) * 2003-11-22 2008-11-18 Lg Display Co., Ltd. LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
KR100623248B1 (ko) * 2004-02-17 2006-09-18 삼성에스디아이 주식회사 Ｌｄｄ 영역을 포함하는 ｐｍｏｓ 박막트랜지스터 및 이의제조방법
US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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CN102082181B (zh) * 2010-12-15 2013-01-02 四川虹视显示技术有限公司 一种有机发光器件像素电路的薄膜晶体管结构
JP2014165310A (ja) * 2013-02-25 2014-09-08 Japan Display Inc 表示装置
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
CN104282696B (zh) * 2014-10-22 2018-07-13 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
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CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN104952934B (zh) * 2015-06-25 2018-05-01 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板
CN109950283B (zh) * 2019-03-25 2021-11-19 昆山国显光电有限公司 一种显示驱动模组、显示面板及显示驱动模组的制备方法

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US9910334B2 (en) 1999-02-23 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US8030659B2 (en) 1999-02-23 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7745829B2 (en) 1999-02-23 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and fabrication method thereof
US7442991B2 (en) 1999-02-23 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Display including casing and display unit
US7365393B2 (en) 1999-02-23 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US9837451B2 (en) 1999-04-27 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US8994711B2 (en) 1999-04-27 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US7348599B2 (en) 1999-07-06 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9236400B2 (en) 1999-07-06 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8664660B2 (en) 1999-07-06 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8227806B2 (en) 1999-07-06 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
GB2358082B (en) * 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
US6580129B2 (en) 2000-01-07 2003-06-17 Seiko Epson Corporation Thin-film transistor and its manufacturing method
GB2358082A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Split gate thin film semiconductor transistor
WO2001050512A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Thin-film transistor and its manufacturing method
US6548356B2 (en) 2000-01-07 2003-04-15 Seiko Epson Corporation Thin film transistor
GB2358083A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Thin film transistors
GB2358083B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
EP1331660A2 (de) * 2002-01-18 2003-07-30 Samsung SDI Co., Ltd. Polykristalline dünne Siliziumschicht für Dünnfilmtransistor und diese verwendende Anzeigevorrichtung
EP1331660A3 (de) * 2002-01-18 2008-04-09 Samsung SDI Co., Ltd. Polykristalline dünne Siliziumschicht für Dünnfilmtransistor und diese verwendende Anzeigevorrichtung
EP1414062A2 (de) * 2002-10-21 2004-04-28 Samsung SDI Co., Ltd. Herstellungsverfahren für Dünnfilm-Transistor mit doppelten oder mehrfachen Gates
US7482179B2 (en) 2002-10-21 2009-01-27 Samsung Sdi Co., Ltd. Method of fabricating a thin film transistor using dual or multiple gates
EP1414062A3 (de) * 2002-10-21 2008-04-23 Samsung SDI Co., Ltd. Herstellungsverfahren für Dünnfilm-Transistor mit doppelten oder mehrfachen Gates
GB2429580A (en) * 2005-08-26 2007-02-28 Chunghwa Picture Tubes Ltd Asymmetric double gate thin film transistor
GB2429580B (en) * 2005-08-26 2008-01-09 Chunghwa Picture Tubes Ltd Thin film transistor

Also Published As

Publication number Publication date
US6034748A (en) 2000-03-07
DE69803713T2 (de) 2002-05-29
JP3274081B2 (ja) 2002-04-15
TW423159B (en) 2001-02-21
DE69803713D1 (de) 2002-03-21
CN1198596A (zh) 1998-11-11
KR19980081122A (ko) 1998-11-25
EP0871227B1 (de) 2002-02-06
JPH10284734A (ja) 1998-10-23
EP0871227A3 (de) 1999-12-08

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