TW423159B - Thin-film transistor and process of manufacturing thereof and Liquid crystal display using thereof - Google Patents

Thin-film transistor and process of manufacturing thereof and Liquid crystal display using thereof Download PDF

Info

Publication number
TW423159B
TW423159B TW087105178A TW87105178A TW423159B TW 423159 B TW423159 B TW 423159B TW 087105178 A TW087105178 A TW 087105178A TW 87105178 A TW87105178 A TW 87105178A TW 423159 B TW423159 B TW 423159B
Authority
TW
Taiwan
Prior art keywords
thin
film transistor
manufacturing
liquid crystal
crystal display
Prior art date
Application number
TW087105178A
Other languages
English (en)
Inventor
Mamoru Furata
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW423159B publication Critical patent/TW423159B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW087105178A 1997-04-08 1998-04-07 Thin-film transistor and process of manufacturing thereof and Liquid crystal display using thereof TW423159B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08856397A JP3274081B2 (ja) 1997-04-08 1997-04-08 薄膜トランジスタの製造方法および液晶表示装置の製造方法

Publications (1)

Publication Number Publication Date
TW423159B true TW423159B (en) 2001-02-21

Family

ID=13946345

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105178A TW423159B (en) 1997-04-08 1998-04-07 Thin-film transistor and process of manufacturing thereof and Liquid crystal display using thereof

Country Status (7)

Country Link
US (1) US6034748A (zh)
EP (1) EP0871227B1 (zh)
JP (1) JP3274081B2 (zh)
KR (1) KR19980081122A (zh)
CN (1) CN1198596A (zh)
DE (1) DE69803713T2 (zh)
TW (1) TW423159B (zh)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
JP4666723B2 (ja) 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6952020B1 (en) * 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP3983460B2 (ja) * 1999-07-06 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
GB2358082B (en) 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
GB2358083B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
US6521492B2 (en) * 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
KR100698238B1 (ko) * 2000-08-26 2007-03-21 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
JP3522216B2 (ja) * 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP4037117B2 (ja) * 2001-02-06 2008-01-23 株式会社日立製作所 表示装置
CN100463225C (zh) * 2001-02-06 2009-02-18 株式会社日立制作所 显示装置及其制造方法
JP2002313804A (ja) * 2001-04-16 2002-10-25 Sharp Corp 半導体装置およびその製造方法
US6906344B2 (en) * 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
KR100477103B1 (ko) 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
KR100477102B1 (ko) 2001-12-19 2005-03-17 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
KR100532082B1 (ko) * 2001-12-28 2005-11-30 엘지.필립스 엘시디 주식회사 다결정 박막트랜지스터 및 그 제조방법
KR100462862B1 (ko) * 2002-01-18 2004-12-17 삼성에스디아이 주식회사 티에프티용 다결정 실리콘 박막 및 이를 이용한디스플레이 디바이스
KR100485531B1 (ko) * 2002-04-15 2005-04-27 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터와 그 제조방법
JP4076164B2 (ja) * 2002-04-16 2008-04-16 シャープ株式会社 アクティブマトリックス基板の製造方法
KR100454751B1 (ko) * 2002-10-21 2004-11-03 삼성에스디아이 주식회사 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법
US7145209B2 (en) * 2003-05-20 2006-12-05 Tpo Displays Corp. Thin film transistor and fabrication method thereof
JP2005043672A (ja) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法
KR100514181B1 (ko) * 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
CN100392868C (zh) * 2003-10-17 2008-06-04 统宝光电股份有限公司 薄膜晶体管结构
US7453531B2 (en) * 2003-11-22 2008-11-18 Lg Display Co., Ltd. LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
KR100623248B1 (ko) * 2004-02-17 2006-09-18 삼성에스디아이 주식회사 Ｌｄｄ 영역을 포함하는 ｐｍｏｓ 박막트랜지스터 및 이의제조방법
WO2007011061A1 (en) * 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI268617B (en) * 2005-08-26 2006-12-11 Chunghwa Picture Tubes Ltd Thin film transistor
KR101056431B1 (ko) * 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
CN102082181B (zh) * 2010-12-15 2013-01-02 四川虹视显示技术有限公司 一种有机发光器件像素电路的薄膜晶体管结构
JP2014165310A (ja) * 2013-02-25 2014-09-08 Japan Display Inc 表示装置
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
CN104282696B (zh) 2014-10-22 2018-07-13 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN104779167A (zh) * 2015-04-09 2015-07-15 京东方科技集团股份有限公司 多晶硅薄膜晶体管及其制备方法、阵列基板、显示面板
CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN104952934B (zh) * 2015-06-25 2018-05-01 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板
CN109950283B (zh) * 2019-03-25 2021-11-19 昆山国显光电有限公司 一种显示驱动模组、显示面板及显示驱动模组的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072655B2 (ja) * 1991-05-21 2000-07-31 ソニー株式会社 アクティブマトリクス表示装置
JPH05121439A (ja) * 1991-10-25 1993-05-18 Sharp Corp 薄膜トランジスタの製造方法
US5412493A (en) * 1992-09-25 1995-05-02 Sony Corporation Liquid crystal display device having LDD structure type thin film transistors connected in series
JP2935083B2 (ja) * 1992-10-22 1999-08-16 カシオ計算機株式会社 薄膜トランジスタの製造方法
JPH06301056A (ja) * 1993-04-15 1994-10-28 Seiko Epson Corp 薄膜半導体装置の製造方法
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
JP3184771B2 (ja) * 1995-09-14 2001-07-09 キヤノン株式会社 アクティブマトリックス液晶表示装置
JP3409542B2 (ja) * 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH10284734A (ja) 1998-10-23
EP0871227B1 (en) 2002-02-06
US6034748A (en) 2000-03-07
KR19980081122A (ko) 1998-11-25
EP0871227A3 (en) 1999-12-08
DE69803713T2 (de) 2002-05-29
EP0871227A2 (en) 1998-10-14
DE69803713D1 (de) 2002-03-21
JP3274081B2 (ja) 2002-04-15
CN1198596A (zh) 1998-11-11

Similar Documents

Publication Publication Date Title
TW423159B (en) Thin-film transistor and process of manufacturing thereof and Liquid crystal display using thereof
TW329500B (en) Electro-optical device
TW344901B (en) Active matrix display device
TW345654B (en) Active matrix display device
KR960039436A (ko) 박막트랜지스터 및 그것을 사용한 액정표시장치
TW328180B (en) Method of fabricating thin film transistor, active array substrate, and liquid crystal display
TW348228B (en) Liquid crystal display device
MX9505069A (es) Articulo que comprende transistores de pelicula delgada organica.
TW376588B (en) Thin film transistor
SG138468A1 (en) A method of manufacturing a semiconductor device
ATE65331T1 (de) Fluessigkristallanzeigevorrichtung.
WO1999030369A3 (en) Thin film transistors and electronic devices comprising such
TW200500702A (en) Thin film transistor array panel and manufacturing method thereof
CA2167396A1 (en) Silicon pixel electrode
TW200508700A (en) Liquid crystal display and thin film transistor array panel therefor
TW200703735A (en) Organic thin film transistor array panel and method of manufacturing the same
KR960009231A (ko) 박막트랜지스터, 반도체장치 및 액정표시장치
WO2000067327A9 (en) Minimally-patterned semiconductor devices for display applications
EP0766120A3 (en) Active matrix substrate and display device incorporating the same
WO1999031720A3 (en) Thin film transistors and electronic devices comprising such
JPS6482674A (en) Thin film transistor
TW200611416A (en) Pixel of a liquid crystal panel and method of fabricating the same and driving method thereof
TW445394B (en) Semiconductor device and method of making the same
CN112768470A (zh) 一种显示面板及显示装置
TW200703663A (en) Thin film transistor substrate, liquid crystal display including the same, and manufacturing method thereof

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees