FI118342B - Anordning för framställning av tunnfilmer - Google Patents

Anordning för framställning av tunnfilmer Download PDF

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Publication number
FI118342B
FI118342B FI991078A FI991078A FI118342B FI 118342 B FI118342 B FI 118342B FI 991078 A FI991078 A FI 991078A FI 991078 A FI991078 A FI 991078A FI 118342 B FI118342 B FI 118342B
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Finland
Prior art keywords
substrate
reaction chamber
reaction
base part
movable part
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FI991078A
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English (en)
Finnish (fi)
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FI991078A0 (sv
FI991078A (sv
Inventor
Leif Keto
Janne Kesaelae
Niklas Bondestam
Pekka T Soininen
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Asm Int
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8554642&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FI118342(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Asm Int filed Critical Asm Int
Priority to FI991078A priority Critical patent/FI118342B/sv
Publication of FI991078A0 publication Critical patent/FI991078A0/sv
Priority to TW089107029A priority patent/TW527433B/zh
Priority to US09/568,077 priority patent/US6562140B1/en
Priority to KR10-2000-0024933A priority patent/KR100415475B1/ko
Priority to JP2000137175A priority patent/JP3649323B2/ja
Priority to EP00660085A priority patent/EP1052309B1/en
Publication of FI991078A publication Critical patent/FI991078A/sv
Priority to US09/769,562 priority patent/US6579374B2/en
Priority to US10/383,291 priority patent/US7833352B2/en
Publication of FI118342B publication Critical patent/FI118342B/sv
Application granted granted Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Claims (24)

1. Anordning för bildande av tunnfilmer pä ett substrat genom att utsätta substratet för altemerande ytreaktioner med reaktanter i gasfas för att forma en tunnfilm pä ytan av 5 substratet genom ytreaktioner, vilken anordning omfattar - etttryckskal (1), - minst en reaktionskammare (2) inrättad inne i tryckskalet, i vars reaktionsrum substratet kan placeras, - inmatningskanaler (6) som är förenade med reaktionskammaren för inmaming av 10 reaktanter som används för bildning av tunnfilmen, samt - utloppskanaler (4) förenade med reaktionskammaren för avlägsnandet av ett överflöd av gasformiga reaktionsprodukter och reaktanter, kännetecknad av att - reaktionskammaren (2) omfattar en basdel (9,10), som är fast monterad i 15 förhällande tili tryckskalet (1), och en rörlig del (18), som är inrättad att tätt sluta mot basdelen i reaktionskammaren.
2. Anordning enligt krav 1, kännetecknad av att den rörliga delen (18) kan förskjutas väsentligen i substratets pian eller vinkelrätt mot substratets pian. * · · 20 • · · * .***. 3. Anordning enligt krav 2, kännetecknad av att den rörliga delen (18) kan ♦ *♦* ·. · · förskj utas bäde i substratets pian och vinkelrätt mot denna. ··· • · · • · · #
4. Anordning enligt krav 2 eller 3, kännetecknad av att basdelen (9,10) uppvisar en 25 innerkant och den rörliga delen (18) en ytterkant, som är utformad att anligga mot ·» ; * · · innerkanten för tätning av den rörliga delen mot basdelen. • · · • · • · *··
5. Anordning enligt nägot av de föregäende kraven, kännetecknad av att reaktions- • · * kammarens rörliga del (18) bildar en stödyta för substratet, pä vilken substratet kan 30 placeras. • · • « * * * · • « 118342
6. Anordningenligtnägotavkraven 1-4, kännetecknad avattreaktions-kammarens basdel (2) bildar en stödyta för substratet, pä vilken substratet kan placeras.
7. Anordning enligt nägot av de föregäende kraven, kännetecknad avatt 5 reaktionskammaren (2) är placerad inne i vakuumkärlet sä att dess basdel stöder mot väggama i kärlet eller basdelen bildar en del av kärlets vägg.
8. Anordning enligt krav 7, kännetecknad av att reaktionskammaren (2) stöder mot kärlets vägg pä sädant sätt att stödets mittaxel gär genom mittpunkten för substratet för att 10 förhindra inverkan av värmerörelser pä placeringen av substratet vid stängning av reaktionskammaren.
9. Anordning enligt nägot av de föregäende kraven, kännetecknad av att minst den ena av reaktionskammarens basdel och den rörliga delen (18) är försedd med uppvärm- 15 ningselement (19).
10. Anordning enligt krav 9, kännetecknad av att bäde reaktionskammarens basdel och dess rörliga del är försedd med uppvärmningselement. • • · · I; 1 · 1 20 11. Anordning enligt krav 9 eller 10, kännetecknad av att reaktionskammarens • 1 *,,2 basdel (9,10) och dess rörliga del (18) är termiskt isolerade frän vakuumkärlet medelst • · ♦ · ***, passi va isoleringar, strälningsskydd och/eller akti va värmeisoleringselement. • · ··♦ • · · • 1
12. Anordning enligt nägot av de föregäende kraven, kännetecknad av att den • · · 25 rörliga delen (18) är försedd med en substratlyftanoidning (20), vars lyftrörelse kan •\t användas för att lyfta substratet frän dess uppstödda läge och placeras pä en transportanordning. • · · *·· «1·· .2·. 13. Anordning enligt krav 12, kännetecknad av att transportanordningen är en • · 30 robotarm. • · • «f · • · · • · · 2 • · 118342
14. Anordningenligtkrav 13, kännetecknad avattsubstratlyftanordningenomfattar tapper (20) inrättade i substratets stödyta, vilka tappar är inrättade att röra sig vinkelrätt mot stödytan för lyftning av ett substrat som är placerat pä stödytan,
15. Anordning enligt krav 14, k ä n n e t e c k n a t av att tappama (20) är fjäderbelastade (21) och de är inrättade att röra sig i urtag i stödytan.
16. Anordning enligt krav 14 eller 15, kännetecknad av att tappamas änden (20) är konformigt avsmalnande i riktning mot stödytan och uttagen i stödytan är tili ett djup 10 motsvarande tappamas änden konformigt utformat, sä att tappama trycker under tätande verkan mot urtagen i stödytan.
17. Anordning enligt nägot av de föregäende kraven, kännetecknad av att den rörliga delen är tätad mot basdelen med metall och/eller elastomertätningar. 15
18. Anordning enligt nägot av de föregäende kraven, kännetecknad av att den rörliga delen är tätad mot basdelen medelst ett sugspär i vilket man valbart kan läta en skyddsgas flöda. • · V.: 20 19. Anordning enligt nägot av de föregäende kraven, kännetecknad av att den • · '· * * rörliga delen är tätad mot basdelen medelst planytor. * · · • · • · • ·· * iti’ 20. Anordning enligt nägot av de föregäende kraven, kännetecknad av att • · · • · · *,, reaktorkonstruktionen är kallväggig. * Φ » • · · * 25 ··, 21. Anordning enligt nägot av de föregäende kraven, kännetecknad av att • ·· * .·♦·. reaktantemas inmatningskanaler och utloppskanalema för överflödet av gasformiga • · ··* reaktionsprodukter och reaktanter är föida genom samma vägg i tryckskalet, företrädesvis • **♦ genom dess botten. • · ··· _ 30 • · • * · 1 Anordning enligt nägot av kraven 1-20, kännetecknad av att reaktantemas • · • · 118342 inmatningskanaler är förda genom tryckskalet bäde upptill och nedtill (i förhällande tili reaktionsrununet).
23. Anordning enligt nägot av de föregäende kraven, kännetecknad av en 5 stödkonstruktion som kan ordnas in t reaktionskammaren och pä vilken minst tvä substrat kan placeras för att samtidigt bilda tunnfilmer pä dessa.
24. Anordning enligt krav 23, k ä n n e t e c k n a d av att stödkonstruktionen omfattar ett hyllsystem som uppvisar hyllplan eller konsoler för uppbärande av substrat, eller en 10 kassettkonstruktion som bestär av sinsemellan likadana stycken som kan staplas pä varandra, vilka stycken uppvisar konsoler eller bärytor som är formade inne i styckena. • · • · · I · I • · • t • « ·· Mt • · • · ··· • · ··· • · 1 2 3 • · · ··· • · · • · · ·· • · • ·· ·«« • · • · ·«· • Φ • 1 • ·· ··· • · • · ··· • · • · · • ·· • · · 2 • · 3
FI991078A 1999-05-10 1999-05-10 Anordning för framställning av tunnfilmer FI118342B (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FI991078A FI118342B (sv) 1999-05-10 1999-05-10 Anordning för framställning av tunnfilmer
TW089107029A TW527433B (en) 1999-05-10 2000-04-14 Apparatus for fabrication of thin films
EP00660085A EP1052309B1 (en) 1999-05-10 2000-05-10 Apparatus for fabrication of thin films
KR10-2000-0024933A KR100415475B1 (ko) 1999-05-10 2000-05-10 기판 상에 박막을 성장시키는 장치
US09/568,077 US6562140B1 (en) 1999-05-10 2000-05-10 Apparatus for fabrication of thin films
JP2000137175A JP3649323B2 (ja) 1999-05-10 2000-05-10 薄膜製造装置
US09/769,562 US6579374B2 (en) 1999-05-10 2001-01-25 Apparatus for fabrication of thin films
US10/383,291 US7833352B2 (en) 1999-05-10 2003-03-06 Apparatus for fabrication of thin films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI991078 1999-05-10
FI991078A FI118342B (sv) 1999-05-10 1999-05-10 Anordning för framställning av tunnfilmer

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FI991078A0 FI991078A0 (sv) 1999-05-10
FI991078A FI991078A (sv) 2000-11-11
FI118342B true FI118342B (sv) 2007-10-15

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EP (1) EP1052309B1 (sv)
JP (1) JP3649323B2 (sv)
KR (1) KR100415475B1 (sv)
FI (1) FI118342B (sv)
TW (1) TW527433B (sv)

Families Citing this family (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
DE10048881A1 (de) * 2000-09-29 2002-03-07 Infineon Technologies Ag Vorrichtung und Verfahren zum planen Verbinden zweier Wafer für ein Dünnschleifen und ein Trennen eines Produkt-Wafers
AU2002232844A1 (en) 2000-12-06 2002-06-18 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US20020144786A1 (en) 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
KR100422199B1 (ko) * 2001-05-04 2004-03-12 주성엔지니어링(주) 반도체 소자 제조장치
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
JP2002339071A (ja) * 2001-05-18 2002-11-27 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Ａｌｃｖｄシステムにおける処理ガス供給機構
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
WO2003029515A2 (en) * 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
KR100956189B1 (ko) 2001-10-26 2010-05-04 어플라이드 머티어리얼스, 인코포레이티드 원자층 증착용 가스 전달 장치
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003035927A2 (en) * 2001-10-26 2003-05-01 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US7175713B2 (en) 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6869838B2 (en) * 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US20030194825A1 (en) * 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) * 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20030235961A1 (en) * 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6861094B2 (en) * 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7118783B2 (en) * 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
JP2004095770A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置
DE10245553A1 (de) * 2002-09-30 2004-04-08 Infineon Technologies Ag Verfahren und Ofen zur Gasphasenabscheidung von Komponenten auf Halbleitersubstrate mit veränderbarer Hauptstromrichtung des Prozessgases
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7244683B2 (en) 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US6868859B2 (en) 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US6994319B2 (en) 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US7914847B2 (en) 2003-05-09 2011-03-29 Asm America, Inc. Reactor surface passivation through chemical deactivation
WO2004102648A2 (en) * 2003-05-09 2004-11-25 Asm America, Inc. Reactor surface passivation through chemical deactivation
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US20050067103A1 (en) 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US7071118B2 (en) * 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
JP2005310757A (ja) * 2004-03-23 2005-11-04 Sii Nanotechnology Inc 微細３次元構造物作製装置及び方法
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
EP1771598B1 (en) 2004-06-28 2009-09-30 Cambridge Nanotech Inc. Atomic layer deposition (ald) system and method
KR100636037B1 (ko) * 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
KR100636036B1 (ko) * 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
US20060156981A1 (en) * 2005-01-18 2006-07-20 Kyle Fondurulia Wafer support pin assembly
US20060188658A1 (en) * 2005-02-22 2006-08-24 Grant Robert W Pressurized reactor for thin film deposition
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US8486845B2 (en) * 2005-03-21 2013-07-16 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060216548A1 (en) * 2005-03-22 2006-09-28 Ming Mao Nanolaminate thin films and method for forming the same using atomic layer deposition
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
KR100645689B1 (ko) * 2005-08-31 2006-11-14 삼성에스디아이 주식회사 선형 증착원
KR100711886B1 (ko) * 2005-08-31 2007-04-25 삼성에스디아이 주식회사 무기 증착원 및 이의 가열원 제어방법
KR100711885B1 (ko) * 2005-08-31 2007-04-25 삼성에스디아이 주식회사 유기 증착원 및 이의 가열원 제어방법
CN1937175B (zh) * 2005-09-20 2012-10-03 中芯国际集成电路制造(上海)有限公司 用于半导体器件的使用大气压的材料原子层沉积的方法
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
TWI331770B (en) 2005-11-04 2010-10-11 Applied Materials Inc Apparatus for plasma-enhanced atomic layer deposition
FI121750B (sv) * 2005-11-17 2011-03-31 Beneq Oy ALD-reaktor
FI121543B (sv) * 2005-11-17 2010-12-31 Beneq Oy Anordning vid ALD-reaktor
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7976898B2 (en) * 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US20080099436A1 (en) * 2006-10-30 2008-05-01 Michael Grimbergen Endpoint detection for photomask etching
US20080176149A1 (en) * 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
KR101355638B1 (ko) * 2006-11-09 2014-01-29 한국에이에스엠지니텍 주식회사 원자층 증착 장치
US20080206987A1 (en) 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US20080213479A1 (en) * 2007-02-16 2008-09-04 Tokyo Electron Limited SiCN film formation method and apparatus
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US7939932B2 (en) * 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
US7939447B2 (en) * 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
KR101376336B1 (ko) 2007-11-27 2014-03-18 한국에이에스엠지니텍 주식회사 원자층 증착 장치
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
JP5233562B2 (ja) * 2008-10-04 2013-07-10 東京エレクトロン株式会社 成膜方法及び成膜装置
US7972961B2 (en) * 2008-10-09 2011-07-05 Asm Japan K.K. Purge step-controlled sequence of processing semiconductor wafers
DE102008052098B4 (de) * 2008-10-14 2013-04-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung photokatalytisch aktiver Titandioxidschichten
US20100101491A1 (en) * 2008-10-29 2010-04-29 Asm Japan K.K. Wafer lift pins suspended and supported at underside of susceptor
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US8216380B2 (en) * 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
JP5088331B2 (ja) * 2009-01-26 2012-12-05 東京エレクトロン株式会社 熱処理装置用の構成部品及び熱処理装置
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
FI123539B (sv) * 2009-02-09 2013-06-28 Beneq Oy ALD reaktor, förfarande för laddning av ALD reaktor och produktionslinje
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
WO2010141668A2 (en) * 2009-06-03 2010-12-09 Intermolecular, Inc. Methods of forming strontium titanate films
KR101536257B1 (ko) * 2009-07-22 2015-07-13 한국에이에스엠지니텍 주식회사 수평 흐름 증착 장치 및 이를 이용한 증착 방법
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
FI124113B (sv) * 2010-08-30 2014-03-31 Beneq Oy Anordning och förfarande för bearbetning av ett substrats yta
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
US8524322B2 (en) 2010-12-28 2013-09-03 Asm International N.V. Combination CVD/ALD method and source
US8746284B2 (en) * 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
US9223203B2 (en) 2011-07-08 2015-12-29 Asm International N.V. Microcontact printed films as an activation layer for selective atomic layer deposition
US9062375B2 (en) 2011-08-17 2015-06-23 Asm Genitech Korea Ltd. Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
JP5772736B2 (ja) * 2012-06-18 2015-09-02 株式会社デンソー 原子層蒸着装置
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US10195704B2 (en) * 2013-03-15 2019-02-05 Infineon Technologies Ag Lift pin for substrate processing
FI126863B (sv) 2016-06-23 2017-06-30 Beneq Oy Apparatur för behandling av partikelmaterial
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
GB1603743A (en) * 1978-02-07 1981-11-25 Modern Precision Engs Ass Ltd Sealing device
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US5769950A (en) 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
JPS6273718A (ja) * 1985-09-27 1987-04-04 Hitachi Ltd 真空処理装置
US4747367A (en) 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
GB8713241D0 (en) * 1987-06-05 1987-07-08 Vg Instr Group Bakeable vacuum systems
US4836138A (en) 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
DE3743938C2 (de) 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
JP2776826B2 (ja) 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
JP2681163B2 (ja) * 1988-07-07 1997-11-26 コニカ株式会社 ハロゲン化銀カラー写真感光材料
NL8900544A (nl) 1989-03-06 1990-10-01 Asm Europ Behandelingsstelsel, behandelingsvat en werkwijze voor het behandelen van een substraat.
JP2743471B2 (ja) * 1989-05-19 1998-04-22 日本電気株式会社 ▲ｉｉｉ▼―ｖ族化合物半導体の気相成長装置
JP3466607B2 (ja) * 1989-09-13 2003-11-17 ソニー株式会社 スパッタリング装置
US5071670A (en) 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JPH0613361A (ja) * 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JP3183575B2 (ja) * 1992-09-03 2001-07-09 東京エレクトロン株式会社 処理装置および処理方法
KR940010154A (ko) * 1992-10-28 1994-05-24 이헌조 컬러브라운관 제조 노광방법
US5271963A (en) 1992-11-16 1993-12-21 Materials Research Corporation Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5803994A (en) * 1993-11-15 1998-09-08 Kaiser Aluminum & Chemical Corporation Aluminum-copper alloy
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
FI100409B (sv) 1994-11-28 1997-11-28 Asm Int Förfarande och anläggning för framställning av tunnfilmer
FI97731C (sv) 1994-11-28 1997-02-10 Mikrokemia Oy Förfarande och anordning för framställning av tunnfilmer
FI97730C (sv) 1994-11-28 1997-02-10 Mikrokemia Oy Anordning för framställning av tunnfilmer
JPH0945597A (ja) 1995-05-25 1997-02-14 Kokusai Electric Co Ltd 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
US5708556A (en) * 1995-07-10 1998-01-13 Watkins Johnson Company Electrostatic chuck assembly
KR970030487A (ko) * 1995-11-29 1997-06-26 김광호 저압화학기상중착 장비를 사용하는 반도체소자의 박막형성 방법
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US5824365A (en) * 1996-06-24 1998-10-20 Micron Technology, Inc. Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
US5891251A (en) * 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
JP3901252B2 (ja) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 化学蒸着装置
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5811762A (en) 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
US6120609A (en) * 1996-10-25 2000-09-19 Applied Materials, Inc. Self-aligning lift mechanism
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6054688A (en) * 1997-06-25 2000-04-25 Brooks Automation, Inc. Hybrid heater with ceramic foil serrated plate and gas assist
US6451686B1 (en) * 1997-09-04 2002-09-17 Applied Materials, Inc. Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
TW452828B (en) * 1998-03-13 2001-09-01 Semitool Inc Micro-environment reactor for processing a microelectronic workpiece
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
WO2000047404A1 (en) 1999-02-12 2000-08-17 Gelest, Inc. Chemical vapor deposition of tungsten nitride
KR100283281B1 (ko) * 1999-02-25 2001-02-15 정수홍 원자층 박막 증착장치
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
KR100319494B1 (ko) 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치

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