FI121750B - ALD-reaktor - Google Patents

ALD-reaktor Download PDF

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Publication number
FI121750B
FI121750B FI20055612A FI20055612A FI121750B FI 121750 B FI121750 B FI 121750B FI 20055612 A FI20055612 A FI 20055612A FI 20055612 A FI20055612 A FI 20055612A FI 121750 B FI121750 B FI 121750B
Authority
FI
Finland
Prior art keywords
reaction chamber
outlet
openings
chamber according
inlet
Prior art date
Application number
FI20055612A
Other languages
English (en)
Finnish (fi)
Other versions
FI20055612A0 (sv
FI20055612A (sv
Inventor
Leif Keto
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20055612A priority Critical patent/FI121750B/sv
Publication of FI20055612A0 publication Critical patent/FI20055612A0/sv
Priority to US12/085,027 priority patent/US20090255470A1/en
Priority to PCT/FI2006/050500 priority patent/WO2007057519A1/en
Priority to EP06808041A priority patent/EP1948843A4/en
Priority to EA200801014A priority patent/EA012961B1/ru
Priority to JP2008540643A priority patent/JP2009516077A/ja
Priority to CN2006800429237A priority patent/CN101310043B/zh
Publication of FI20055612A publication Critical patent/FI20055612A/sv
Application granted granted Critical
Publication of FI121750B publication Critical patent/FI121750B/sv

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)

Claims (16)

1. Reaktionskammare i en ALD-reaktor, som omfattar en botten-vägg, en övre vägg och en eller flera sidoväggar som sträcker sig mellan bot-tenväggen och den övre väggen, vilka väggar definierar reaktionskammarens 5 inre del (28), varvid reaktorn dessutom omfattar en eller flera mataröppningar (30) för inmatning av gas i reaktionskammaren och en eller flera utloppsöpp-ningar (40, 50) för avlägsning av den tili reaktorn inmatade gasen ur reaktionskammaren, kännetecknad avatt mataröppningarna (30) och utlopps-öppningarna (40) är anordnade pa en av sidoväggarna definierad periferi, sä 10 att periferins hela längd är indelad i en inloppsdel och en utloppsdel för inmatning av gas i reaktionskammaren via den av sidoväggarna definierade periferins inloppsdel och för avlägsning via den av sidoväggarna definierade periferins utloppsdel.
2. Reaktionskammare enligt patentkrav 1, kännetecknad av 15 att reaktionskammarens inre del (28) är cylindrisk eller oval till formen, varvid den omfattar en periferisk sidovägg.
3. Reaktionskammare enligt patentkrav 1, kännetecknad av att reaktionskammarens inre del (28) är kubisk tili formen.
4. Reaktionskammare enligt nagot av de föregaende patentkraven, 20 kännetecknad av att reaktionskammarens inre del (28) har formen av ett rektangulärt prisma.
5. Reaktionskammare enligt nägot av de föregaende patentkraven 1-4, kännetecknad av att i reaktionskammaren har ästadkommits ett eller flera inloppsaggregat (14, 12) som star i strömningsförbindelse med ma- 25 taröppningarna (30) och ett eller flera utloppsaggregat (16, 18) som star i o strömningsförbindelse med utloppsöppningarna (40, 50). <M
^ 6. Reaktionskammare enligt patentkrav 5, kännetecknad av ° att utloppsaggregaten (16, 18) och inloppsaggregaten (14, 12) har astadkom- ^ mits i en bottenplatta (4). | 30
7. Reaktionskammare enligt nagot av patentkraven 1-6, känne- cvj tecknad av att reaktionskammaren dessutom omfattar reglerorgan (10, 26) g för regiering av inloppsaggregaten (14, 12) och/eller mataröppningarna (30) o och/eller utloppsaggregaten (16, 18) och/eller utloppsöppningarna (40, 50) för ^ regiering av mängden gas som ska inmatas i reaktionskammarens inre del 35 (28) och/eller avlägsnas därifran.
8. Reaktionskammare enligt patentkrav 7, kännetecknad av att reglerorganen (10, 26) har ästadkommits att reglera mataröppningarnas (30) och/eller utloppsöppningarnas (40, 50) läge och/eller storlek och/eller an-tal.
9. Reaktionskammare enligt patentkrav 8, kännetecknad av att reglerorganen (10, 26) har astadkommits att reglera inloppsaggregatens (14, 12) och/eller utloppsaggregatens (16, 18) antal och/eller läge.
10. Reaktionskammare enligt nägot av de föregäende patentkraven 7-9, kännetecknad av att reglerorganen (10, 26) omfattar en i inlopps- 10 aggregatet (14) astadkommen halplatta (10), via vars hal (12) gas leds in i ma-taröppningarna (30), och vars längd och/eller antal hal (12) kan regleras.
11. Reaktionskammare enligt nägot av de föregäende patentkraven 1-10, kännetecknad av att säväl i bottenplatan (4) som i täckpläten (2) har ästadkommits hällare (22, 20) för ett substrat, varvid tvä substrat kan pro- 15 cesseras i reaktionskammaren samtidigt.
12. Reaktionskammare enligt patentkrav 11, kännetecknad av att den i täckpläten (2) ästadkomna hällaren (20) är anordnad sä att det däri placerade substratet bildar ätminstone en del av reaktionskammarens övre vägg, och den i bottenplattan (4) ästadkomna hällaren (22) är anordnad sä att 20 det däri placerade substratet bildar ätminstone en del av reaktionskammarens bottenvägg.
13. Reaktionskammare enligt nägot av de föregäende patentkraven 1-10, kännetecknad av att matar- och/eller utloppsöppningen (30, 40) omfattar häl (12), via vilka gas kan mätäs tili reaktionskammarens inre del (28).
14. Reaktionskammare enligt nägot av de föregäende patentkraven ^ 1-10, kännetecknad av att matar- och/eller utloppsöppningen (30, 40) o har ästadkommits som en spalt.
15. Reaktionskammare enligt patentkrav 14, kännetecknad o ^ av att spalten sträcker sig över hela reaktionskammarens sidoväggars dimen- 30 sion. X
£ 16. Reaktionskammare enligt nägot av de föregäende patentkraven w 1-15, kännetecknat av att mataröppningarna och utloppsöppningarna ίο bildar reaktionskammarens sidoväggar. LO o o cv
FI20055612A 2005-11-17 2005-11-17 ALD-reaktor FI121750B (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20055612A FI121750B (sv) 2005-11-17 2005-11-17 ALD-reaktor
US12/085,027 US20090255470A1 (en) 2005-11-17 2006-11-16 Ald reactor
PCT/FI2006/050500 WO2007057519A1 (en) 2005-11-17 2006-11-16 Ald reactor
EP06808041A EP1948843A4 (en) 2005-11-17 2006-11-16 REACTOR ALD
EA200801014A EA012961B1 (ru) 2005-11-17 2006-11-16 Реактор для послойного атомного осаждения
JP2008540643A JP2009516077A (ja) 2005-11-17 2006-11-16 Ａｌｄ反応容器
CN2006800429237A CN101310043B (zh) 2005-11-17 2006-11-16 原子层沉积反应器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20055612 2005-11-17
FI20055612A FI121750B (sv) 2005-11-17 2005-11-17 ALD-reaktor

Publications (3)

Publication Number Publication Date
FI20055612A0 FI20055612A0 (sv) 2005-11-17
FI20055612A FI20055612A (sv) 2007-05-18
FI121750B true FI121750B (sv) 2011-03-31

Family

ID=35458852

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20055612A FI121750B (sv) 2005-11-17 2005-11-17 ALD-reaktor

Country Status (7)

Country Link
US (1) US20090255470A1 (sv)
EP (1) EP1948843A4 (sv)
JP (1) JP2009516077A (sv)
CN (1) CN101310043B (sv)
EA (1) EA012961B1 (sv)
FI (1) FI121750B (sv)
WO (1) WO2007057519A1 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI123322B (sv) * 2007-12-17 2013-02-28 Beneq Oy Förfarande och anordning för att generera plasma
FI122941B (sv) * 2008-06-12 2012-09-14 Beneq Oy Anordning i en ALD-reaktor
FI122940B (sv) * 2009-02-09 2012-09-14 Beneq Oy Reaktionskammare
FR2989691B1 (fr) * 2012-04-24 2014-05-23 Commissariat Energie Atomique Reacteur pour le depot de couche atomique (ald), application a l'encapsulage d'un dispositif oled par depot de couche transparente en al2o3.
EP3014533A4 (en) 2013-06-27 2016-11-09 Picosun Oy ANTI-COUNTERFEITING SIGNATURE
EP2937890B1 (en) 2014-04-22 2020-06-03 Europlasma nv Plasma coating apparatus with a plasma diffuser and method preventing discolouration of a substrate
CN111517928A (zh) * 2020-04-30 2020-08-11 武汉有机实业有限公司 二苄醚氧化工艺

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Also Published As

Publication number Publication date
EP1948843A1 (en) 2008-07-30
FI20055612A0 (sv) 2005-11-17
FI20055612A (sv) 2007-05-18
CN101310043A (zh) 2008-11-19
WO2007057519A1 (en) 2007-05-24
JP2009516077A (ja) 2009-04-16
EP1948843A4 (en) 2010-04-14
EA200801014A1 (ru) 2008-12-30
CN101310043B (zh) 2010-12-22
EA012961B1 (ru) 2010-02-26
US20090255470A1 (en) 2009-10-15

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