EA200801014A1 - Реактор для послойного атомного осаждения - Google Patents

Реактор для послойного атомного осаждения

Info

Publication number
EA200801014A1
EA200801014A1 EA200801014A EA200801014A EA200801014A1 EA 200801014 A1 EA200801014 A1 EA 200801014A1 EA 200801014 A EA200801014 A EA 200801014A EA 200801014 A EA200801014 A EA 200801014A EA 200801014 A1 EA200801014 A1 EA 200801014A1
Authority
EA
Eurasian Patent Office
Prior art keywords
reaction chamber
reactor
late
atomic deposition
wall
Prior art date
Application number
EA200801014A
Other languages
English (en)
Other versions
EA012961B1 (ru
Inventor
Пекка Соининен
Лейф Кето
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA200801014A1 publication Critical patent/EA200801014A1/ru
Publication of EA012961B1 publication Critical patent/EA012961B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)

Abstract

Изобретение относится к реакционной камере реактора послойного атомного осаждения, содержащей нижнюю стенку, верхнюю стенку и боковые стенки, проходящие между верхней стенкой и нижней стенкой с образованием внутренней части (28) реакционной камеры. Реактор содержит также одно или несколько впускных отверстий (30) для подачи газа в реакционную камеру и одно или несколько выпускных отверстий (40, 50) для отвода поданного в реактор газа из реакционной камеры. Реакционная камера отличается тем, что каждая боковая стенка реакционной камеры содержит одно или несколько впускных отверстий (30), и в этом случае все боковые стенки реакционной камеры принимают участие в газообмене.
EA200801014A 2005-11-17 2006-11-16 Реактор для послойного атомного осаждения EA012961B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20055612A FI121750B (fi) 2005-11-17 2005-11-17 ALD-reaktori
PCT/FI2006/050500 WO2007057519A1 (en) 2005-11-17 2006-11-16 Ald reactor

Publications (2)

Publication Number Publication Date
EA200801014A1 true EA200801014A1 (ru) 2008-12-30
EA012961B1 EA012961B1 (ru) 2010-02-26

Family

ID=35458852

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200801014A EA012961B1 (ru) 2005-11-17 2006-11-16 Реактор для послойного атомного осаждения

Country Status (7)

Country Link
US (1) US20090255470A1 (ru)
EP (1) EP1948843A4 (ru)
JP (1) JP2009516077A (ru)
CN (1) CN101310043B (ru)
EA (1) EA012961B1 (ru)
FI (1) FI121750B (ru)
WO (1) WO2007057519A1 (ru)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI123322B (fi) * 2007-12-17 2013-02-28 Beneq Oy Menetelmä ja laitteisto plasman muodostamiseksi
FI122941B (fi) * 2008-06-12 2012-09-14 Beneq Oy Sovitelma ALD-reaktorin yhteydessä
FI122940B (fi) * 2009-02-09 2012-09-14 Beneq Oy Reaktiokammio
FR2989691B1 (fr) * 2012-04-24 2014-05-23 Commissariat Energie Atomique Reacteur pour le depot de couche atomique (ald), application a l'encapsulage d'un dispositif oled par depot de couche transparente en al2o3.
RU2015155194A (ru) 2013-06-27 2017-08-01 Пикосан Ой Способ нанесения идентификационной отметки, подтверждающей подлинность изделия
EP2937890B1 (en) 2014-04-22 2020-06-03 Europlasma nv Plasma coating apparatus with a plasma diffuser and method preventing discolouration of a substrate
CN111517928A (zh) * 2020-04-30 2020-08-11 武汉有机实业有限公司 二苄醚氧化工艺

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JP3024449B2 (ja) * 1993-07-24 2000-03-21 ヤマハ株式会社 縦型熱処理炉及び熱処理方法
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US6030902A (en) * 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
JP3231996B2 (ja) * 1996-04-26 2001-11-26 シャープ株式会社 気相成長装置
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KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
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US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
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KR100453014B1 (ko) * 2001-12-26 2004-10-14 주성엔지니어링(주) Ｃｖｄ 장치
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KR20040007963A (ko) * 2002-07-15 2004-01-28 삼성전자주식회사 단원자층 증착 반응장치
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Also Published As

Publication number Publication date
FI20055612A0 (fi) 2005-11-17
JP2009516077A (ja) 2009-04-16
FI20055612A (fi) 2007-05-18
EP1948843A4 (en) 2010-04-14
CN101310043A (zh) 2008-11-19
CN101310043B (zh) 2010-12-22
WO2007057519A1 (en) 2007-05-24
US20090255470A1 (en) 2009-10-15
EP1948843A1 (en) 2008-07-30
EA012961B1 (ru) 2010-02-26
FI121750B (fi) 2011-03-31

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Legal Events

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM