JP5963948B2 - 原子層堆積カートリッジを用いた粉末粒子コーティング - Google Patents
原子層堆積カートリッジを用いた粉末粒子コーティング Download PDFInfo
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- JP5963948B2 JP5963948B2 JP2015512090A JP2015512090A JP5963948B2 JP 5963948 B2 JP5963948 B2 JP 5963948B2 JP 2015512090 A JP2015512090 A JP 2015512090A JP 2015512090 A JP2015512090 A JP 2015512090A JP 5963948 B2 JP5963948 B2 JP 5963948B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Description
Claims (17)
- クイックカップリング法によって原子層堆積(ALD)カートリッジをALD反応器の受け器に受け入れることであって、前記ALDカートリッジはALD反応室として役立つように構成されることと、
逐次自己飽和表面反応によって前記ALDカートリッジ内の粒状材料の表面を処理することと、
を含む方法であって、更に、上下に重なるように配された複数の区画内で粒状材料を処理することを含み、各区画はフィルター板によって隣接する区画から分離している、方法。 - 前記クイックカップリング法が、ロック部材が前記ALDカートリッジをその正しい位置にロックするまで前記ALDカートリッジはねじられるねじり方法、および前記ALDカートリッジをその正しい位置にロックするフォームロッキング方法から成る群から選択される請求項1に記載の方法。
- 前記粒状材料内での凝集物の形成を妨げるために、振動ガスを前記ALDカートリッジの中に供給することを含む請求項1または2に記載の方法。
- 振動不活性ガスを前記ALDカートリッジの中に供給するために、前駆体供給ラインから分離した流れチャネルを使用することを含む請求項1から3のいずれか一項に記載の方法。
- 反応残渣を少なくとも一つの出口導管を通して排出することを含み、前記少なくとも一つの出口導管は前記ALDカートリッジ本体内に配置される請求項1から4のいずれか一項に記載の方法。
- 前記ALDカートリッジ本体内に配置した装填チャネルを通して前記粒状材料を装填することを含む請求項1から5のいずれか一項に記載の方法。
- ALD反応室として役立つように構成されて、クイックカップリング法によって、ALD反応器のALD反応器本体に取り付けるように構成したクイックカップリング機構を備えた着脱可能な原子層堆積(ALD)カートリッジであって、前記クイックカップリング法によって前記ALD反応器本体に取り付けられるならば、逐次自己飽和表面反応によって該ALDカートリッジ内で粒状材料の表面を処理するように構成されるALDカートリッジであって、更に、複数の粒状材料コーティング区画をその間に形成するように、互いに間隔を空けて上下に重なり合うように配置される複数のフィルター板を備える、ALDカートリッジ。
- 反応残渣を前記ALD反応器本体を通して排出するように構成した前記ALDカートリッジ本体内に出口導管を備える請求項7に記載の着脱可能なALDカートリッジ。
- ガス拡散空間を入口フィルターの下に備える請求項7または8に記載の着脱可能なALDカートリッジ。
- クイックカップリング法によって原子層堆積(ALD)カートリッジをALD反応室の中に受け入れるように構成される受け器と、
逐次自己飽和表面反応によって前記ALDカートリッジ内で粒状材料の表面を処理するために、前駆体蒸気を前記ALDカートリッジの中に供給するように構成される供給ラインと、
を備えるALD反応器であって、ここで前記ALDカートリッジは、請求項7から9のいずれか一項に記載のALDカートリッジである、ALD反応器。 - 前記受け器が、ねじり方法によって前記ALDカートリッジを受け入れるように構成され、そこにおいて、ロック部材が前記ALDカートリッジをその正しい位置にロックするまで、前記ALDカートリッジはねじられる請求項10に記載のALD反応器。
- 前記受け器が、前記ALDカートリッジをその正しい位置にロックするフォームロッキング方法によって前記ALDカートリッジを受け入れるように構成される請求項10に記載のALD反応器。
- 前記ALDが、前記粒状材料内での凝集物の形成を妨げるために、振動ガスを前記ALDカートリッジの中に供給するように構成した流れチャネルに振動源を備える請求項10から12のいずれか一項に記載のALD反応器。
- 前記ALDカートリッジ本体内に配置した出口導管から反応残渣を受け入れるように構成したALD反応器本体内に出口導管を備える請求項10から13のいずれか一項に記載のALD反応器。
- 前記ALDカートリッジ本体内に配置した装填チャネルに粒状材料を送るように構成した前記ALD反応器本体内に装填チャネルを備える請求項10から14のいずれか一項に記載のALD反応器。
- 前記ALDカートリッジの入口フィルターの前にガス拡散空間を形成するように構成される請求項10から15のいずれか一項に記載のALD反応器。
- 請求項10から16のいずれか一項に記載のALD反応器および請求項7から9のいずれか一項に記載のALDカートリッジを備えた装置。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2012/050462 WO2013171360A1 (en) | 2012-05-14 | 2012-05-14 | Powder particle coating using atomic layer deposition cartridge |
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| Publication Number | Publication Date |
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| JP2015520297A JP2015520297A (ja) | 2015-07-16 |
| JP5963948B2 true JP5963948B2 (ja) | 2016-08-03 |
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| JP2015512090A Expired - Fee Related JP5963948B2 (ja) | 2012-05-14 | 2012-05-14 | 原子層堆積カートリッジを用いた粉末粒子コーティング |
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| Country | Link |
|---|---|
| US (1) | US20150125599A1 (ja) |
| EP (1) | EP2850222A4 (ja) |
| JP (1) | JP5963948B2 (ja) |
| KR (1) | KR20150013296A (ja) |
| CN (1) | CN104284998A (ja) |
| IN (1) | IN2014DN09214A (ja) |
| RU (1) | RU2600042C2 (ja) |
| SG (1) | SG11201406817XA (ja) |
| TW (1) | TW201346057A (ja) |
| WO (1) | WO2013171360A1 (ja) |
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| WO2022239888A1 (ko) * | 2021-05-13 | 2022-11-17 | (주)아이작리서치 | 파우더용 원자층 증착 설비 |
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| JPH0638910B2 (ja) * | 1986-01-10 | 1994-05-25 | フロイント産業株式会社 | 粉粒体処理方法および装置 |
| US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
| DE19836013C2 (de) * | 1998-08-10 | 2002-12-19 | Weitmann & Konrad Fa | Pudervorrichtung |
| WO2003008110A1 (en) * | 2001-07-18 | 2003-01-30 | The Regents Of The University Of Colorado | A method of depositing an inorganic film on an organic polymer |
| EP1752991B1 (en) * | 2004-04-21 | 2012-11-21 | Nuclear Fuel Industries, Ltd. | Apparatus for manufacturing coated fuel particle for high temperature gas-cooled reactor |
| US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
| US8993051B2 (en) * | 2007-12-12 | 2015-03-31 | Technische Universiteit Delft | Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle |
| US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
| US8075692B2 (en) * | 2009-11-18 | 2011-12-13 | Rec Silicon Inc | Fluid bed reactor |
| US9284643B2 (en) * | 2010-03-23 | 2016-03-15 | Pneumaticoat Technologies Llc | Semi-continuous vapor deposition process for the manufacture of coated particles |
| WO2012139006A2 (en) * | 2011-04-07 | 2012-10-11 | Veeco Instruments Inc. | Metal-organic vapor phase epitaxy system and process |
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2012
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- 2012-05-14 KR KR20147035040A patent/KR20150013296A/ko not_active Withdrawn
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| IN2014DN09214A (ja) | 2015-07-10 |
| RU2014147671A (ru) | 2016-07-10 |
| KR20150013296A (ko) | 2015-02-04 |
| JP2015520297A (ja) | 2015-07-16 |
| WO2013171360A1 (en) | 2013-11-21 |
| RU2600042C2 (ru) | 2016-10-20 |
| TW201346057A (zh) | 2013-11-16 |
| US20150125599A1 (en) | 2015-05-07 |
| CN104284998A (zh) | 2015-01-14 |
| SG11201406817XA (en) | 2014-12-30 |
| EP2850222A1 (en) | 2015-03-25 |
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