DE69824972T2 - Integrierter halbleiterschaltkreis - Google Patents

Integrierter halbleiterschaltkreis Download PDF

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Publication number
DE69824972T2
DE69824972T2 DE69824972T DE69824972T DE69824972T2 DE 69824972 T2 DE69824972 T2 DE 69824972T2 DE 69824972 T DE69824972 T DE 69824972T DE 69824972 T DE69824972 T DE 69824972T DE 69824972 T2 DE69824972 T2 DE 69824972T2
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DE
Germany
Prior art keywords
circuit
voltage
substrate
substrate bias
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69824972T
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German (de)
English (en)
Other versions
DE69824972D1 (de
Inventor
Hiroyuki Mizuno
Koichiro Kokubunji-shi ISHIBASHI
Takanori Kokubunji-shi SHIMURA
Toshihiro Kodaira-shi HATTORI
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
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Publication of DE69824972D1 publication Critical patent/DE69824972D1/de
Publication of DE69824972T2 publication Critical patent/DE69824972T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69824972T 1997-12-26 1998-12-21 Integrierter halbleiterschaltkreis Expired - Lifetime DE69824972T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置
JP35927197 1997-12-26
PCT/JP1998/005770 WO1999034445A1 (fr) 1997-12-26 1998-12-21 Circuit integre semi-conducteur

Publications (2)

Publication Number Publication Date
DE69824972D1 DE69824972D1 (de) 2004-08-12
DE69824972T2 true DE69824972T2 (de) 2005-07-14

Family

ID=18463648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69824972T Expired - Lifetime DE69824972T2 (de) 1997-12-26 1998-12-21 Integrierter halbleiterschaltkreis

Country Status (9)

Country Link
US (8) US6483374B1 (enExample)
EP (1) EP1043774B1 (enExample)
JP (1) JP4109340B2 (enExample)
KR (1) KR100625153B1 (enExample)
CN (1) CN1195324C (enExample)
DE (1) DE69824972T2 (enExample)
MY (1) MY118314A (enExample)
TW (1) TW426988B (enExample)
WO (1) WO1999034445A1 (enExample)

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US20030016076A1 (en) 2003-01-23
EP1043774A4 (en) 2002-01-02
US20050218965A1 (en) 2005-10-06
US6337593B1 (en) 2002-01-08
US7321252B2 (en) 2008-01-22
US20060176101A1 (en) 2006-08-10
US6987415B2 (en) 2006-01-17
CN1283308A (zh) 2001-02-07
US6707334B2 (en) 2004-03-16
EP1043774A1 (en) 2000-10-11
KR20010033614A (ko) 2001-04-25
JP4109340B2 (ja) 2008-07-02
US6600360B2 (en) 2003-07-29
US20080136502A1 (en) 2008-06-12
JPH11191611A (ja) 1999-07-13
TW426988B (en) 2001-03-21
CN1195324C (zh) 2005-03-30
MY118314A (en) 2004-09-30
US7046075B2 (en) 2006-05-16
EP1043774B1 (en) 2004-07-07
US20040183585A1 (en) 2004-09-23
US6483374B1 (en) 2002-11-19
KR100625153B1 (ko) 2006-09-20
US20030206049A1 (en) 2003-11-06
WO1999034445A1 (fr) 1999-07-08
US7598796B2 (en) 2009-10-06
DE69824972D1 (de) 2004-08-12

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