MY118314A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
MY118314A
MY118314A MYPI98005761A MYPI9805761A MY118314A MY 118314 A MY118314 A MY 118314A MY PI98005761 A MYPI98005761 A MY PI98005761A MY PI9805761 A MYPI9805761 A MY PI9805761A MY 118314 A MY118314 A MY 118314A
Authority
MY
Malaysia
Prior art keywords
substrate
semiconductor
controlling
integrated circuit
semiconductor integrated
Prior art date
Application number
MYPI98005761A
Other languages
English (en)
Inventor
Hiroyuki Mizuno
Koichiro Ishibashi
Takanori Shimura
Toshihiro Hattori
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY118314A publication Critical patent/MY118314A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
MYPI98005761A 1997-12-26 1998-12-19 Semiconductor integrated circuit MY118314A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置

Publications (1)

Publication Number Publication Date
MY118314A true MY118314A (en) 2004-09-30

Family

ID=18463648

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI98005761A MY118314A (en) 1997-12-26 1998-12-19 Semiconductor integrated circuit

Country Status (9)

Country Link
US (8) US6483374B1 (enExample)
EP (1) EP1043774B1 (enExample)
JP (1) JP4109340B2 (enExample)
KR (1) KR100625153B1 (enExample)
CN (1) CN1195324C (enExample)
DE (1) DE69824972T2 (enExample)
MY (1) MY118314A (enExample)
TW (1) TW426988B (enExample)
WO (1) WO1999034445A1 (enExample)

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US20030016076A1 (en) 2003-01-23
EP1043774A4 (en) 2002-01-02
US20050218965A1 (en) 2005-10-06
US6337593B1 (en) 2002-01-08
DE69824972T2 (de) 2005-07-14
US7321252B2 (en) 2008-01-22
US20060176101A1 (en) 2006-08-10
US6987415B2 (en) 2006-01-17
CN1283308A (zh) 2001-02-07
US6707334B2 (en) 2004-03-16
EP1043774A1 (en) 2000-10-11
KR20010033614A (ko) 2001-04-25
JP4109340B2 (ja) 2008-07-02
US6600360B2 (en) 2003-07-29
US20080136502A1 (en) 2008-06-12
JPH11191611A (ja) 1999-07-13
TW426988B (en) 2001-03-21
CN1195324C (zh) 2005-03-30
US7046075B2 (en) 2006-05-16
EP1043774B1 (en) 2004-07-07
US20040183585A1 (en) 2004-09-23
US6483374B1 (en) 2002-11-19
KR100625153B1 (ko) 2006-09-20
US20030206049A1 (en) 2003-11-06
WO1999034445A1 (fr) 1999-07-08
US7598796B2 (en) 2009-10-06
DE69824972D1 (de) 2004-08-12

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