CN1195324C - 半导体集成电路 - Google Patents

半导体集成电路 Download PDF

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Publication number
CN1195324C
CN1195324C CNB988126702A CN98812670A CN1195324C CN 1195324 C CN1195324 C CN 1195324C CN B988126702 A CNB988126702 A CN B988126702A CN 98812670 A CN98812670 A CN 98812670A CN 1195324 C CN1195324 C CN 1195324C
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CN
China
Prior art keywords
power supply
circuit
voltage
semiconductor integrated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB988126702A
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English (en)
Chinese (zh)
Other versions
CN1283308A (zh
Inventor
水野弘之
石桥孝一郎
志村隆则
服部俊洋
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Renesas Electronics Corp
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Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1283308A publication Critical patent/CN1283308A/zh
Application granted granted Critical
Publication of CN1195324C publication Critical patent/CN1195324C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB988126702A 1997-12-26 1998-12-21 半导体集成电路 Expired - Fee Related CN1195324C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP359271/1997 1997-12-26
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
CN1283308A CN1283308A (zh) 2001-02-07
CN1195324C true CN1195324C (zh) 2005-03-30

Family

ID=18463648

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988126702A Expired - Fee Related CN1195324C (zh) 1997-12-26 1998-12-21 半导体集成电路

Country Status (9)

Country Link
US (8) US6483374B1 (enExample)
EP (1) EP1043774B1 (enExample)
JP (1) JP4109340B2 (enExample)
KR (1) KR100625153B1 (enExample)
CN (1) CN1195324C (enExample)
DE (1) DE69824972T2 (enExample)
MY (1) MY118314A (enExample)
TW (1) TW426988B (enExample)
WO (1) WO1999034445A1 (enExample)

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US20030016076A1 (en) 2003-01-23
EP1043774A4 (en) 2002-01-02
US20050218965A1 (en) 2005-10-06
US6337593B1 (en) 2002-01-08
DE69824972T2 (de) 2005-07-14
US7321252B2 (en) 2008-01-22
US20060176101A1 (en) 2006-08-10
US6987415B2 (en) 2006-01-17
CN1283308A (zh) 2001-02-07
US6707334B2 (en) 2004-03-16
EP1043774A1 (en) 2000-10-11
KR20010033614A (ko) 2001-04-25
JP4109340B2 (ja) 2008-07-02
US6600360B2 (en) 2003-07-29
US20080136502A1 (en) 2008-06-12
JPH11191611A (ja) 1999-07-13
TW426988B (en) 2001-03-21
MY118314A (en) 2004-09-30
US7046075B2 (en) 2006-05-16
EP1043774B1 (en) 2004-07-07
US20040183585A1 (en) 2004-09-23
US6483374B1 (en) 2002-11-19
KR100625153B1 (ko) 2006-09-20
US20030206049A1 (en) 2003-11-06
WO1999034445A1 (fr) 1999-07-08
US7598796B2 (en) 2009-10-06
DE69824972D1 (de) 2004-08-12

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