KR100625153B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR100625153B1
KR100625153B1 KR1020007007127A KR20007007127A KR100625153B1 KR 100625153 B1 KR100625153 B1 KR 100625153B1 KR 1020007007127 A KR1020007007127 A KR 1020007007127A KR 20007007127 A KR20007007127 A KR 20007007127A KR 100625153 B1 KR100625153 B1 KR 100625153B1
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South Korea
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circuit
substrate
substrate bias
state
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Expired - Fee Related
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KR1020007007127A
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English (en)
Korean (ko)
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KR20010033614A (ko
Inventor
히로유끼 미즈노
고이찌로 이시바시
다까노리 시무라
도시히로 핫또리
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010033614A publication Critical patent/KR20010033614A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020007007127A 1997-12-26 1998-12-21 반도체 집적 회로 장치 Expired - Fee Related KR100625153B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1997-359271 1997-12-26
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR20010033614A KR20010033614A (ko) 2001-04-25
KR100625153B1 true KR100625153B1 (ko) 2006-09-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007007127A Expired - Fee Related KR100625153B1 (ko) 1997-12-26 1998-12-21 반도체 집적 회로 장치

Country Status (9)

Country Link
US (8) US6483374B1 (enExample)
EP (1) EP1043774B1 (enExample)
JP (1) JP4109340B2 (enExample)
KR (1) KR100625153B1 (enExample)
CN (1) CN1195324C (enExample)
DE (1) DE69824972T2 (enExample)
MY (1) MY118314A (enExample)
TW (1) TW426988B (enExample)
WO (1) WO1999034445A1 (enExample)

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US20030016076A1 (en) 2003-01-23
EP1043774A4 (en) 2002-01-02
US20050218965A1 (en) 2005-10-06
US6337593B1 (en) 2002-01-08
DE69824972T2 (de) 2005-07-14
US7321252B2 (en) 2008-01-22
US20060176101A1 (en) 2006-08-10
US6987415B2 (en) 2006-01-17
CN1283308A (zh) 2001-02-07
US6707334B2 (en) 2004-03-16
EP1043774A1 (en) 2000-10-11
KR20010033614A (ko) 2001-04-25
JP4109340B2 (ja) 2008-07-02
US6600360B2 (en) 2003-07-29
US20080136502A1 (en) 2008-06-12
JPH11191611A (ja) 1999-07-13
TW426988B (en) 2001-03-21
CN1195324C (zh) 2005-03-30
MY118314A (en) 2004-09-30
US7046075B2 (en) 2006-05-16
EP1043774B1 (en) 2004-07-07
US20040183585A1 (en) 2004-09-23
US6483374B1 (en) 2002-11-19
US20030206049A1 (en) 2003-11-06
WO1999034445A1 (fr) 1999-07-08
US7598796B2 (en) 2009-10-06
DE69824972D1 (de) 2004-08-12

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