JP4109340B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4109340B2
JP4109340B2 JP35927197A JP35927197A JP4109340B2 JP 4109340 B2 JP4109340 B2 JP 4109340B2 JP 35927197 A JP35927197 A JP 35927197A JP 35927197 A JP35927197 A JP 35927197A JP 4109340 B2 JP4109340 B2 JP 4109340B2
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JP
Japan
Prior art keywords
circuit
substrate
substrate bias
state
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP35927197A
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English (en)
Japanese (ja)
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JPH11191611A (ja
JPH11191611A5 (enExample
Inventor
弘之 水野
孝一郎 石橋
隆則 志村
俊洋 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP35927197A priority Critical patent/JP4109340B2/ja
Priority to TW087120452A priority patent/TW426988B/zh
Priority to MYPI98005761A priority patent/MY118314A/en
Priority to DE69824972T priority patent/DE69824972T2/de
Priority to KR1020007007127A priority patent/KR100625153B1/ko
Priority to PCT/JP1998/005770 priority patent/WO1999034445A1/ja
Priority to US09/582,485 priority patent/US6483374B1/en
Priority to CNB988126702A priority patent/CN1195324C/zh
Priority to EP98961441A priority patent/EP1043774B1/en
Publication of JPH11191611A publication Critical patent/JPH11191611A/ja
Priority to US09/492,506 priority patent/US6337593B1/en
Priority to US10/247,525 priority patent/US6600360B2/en
Priority to US10/443,018 priority patent/US6707334B2/en
Priority to US10/765,923 priority patent/US6987415B2/en
Publication of JPH11191611A5 publication Critical patent/JPH11191611A5/ja
Priority to US11/144,695 priority patent/US7046075B2/en
Priority to US11/396,543 priority patent/US7321252B2/en
Priority to US11/987,073 priority patent/US7598796B2/en
Application granted granted Critical
Publication of JP4109340B2 publication Critical patent/JP4109340B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP35927197A 1997-11-21 1997-12-26 半導体集積回路装置 Expired - Lifetime JP4109340B2 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置
TW087120452A TW426988B (en) 1997-12-26 1998-12-09 Semiconductor integrated circuit apparatus
MYPI98005761A MY118314A (en) 1997-12-26 1998-12-19 Semiconductor integrated circuit
KR1020007007127A KR100625153B1 (ko) 1997-12-26 1998-12-21 반도체 집적 회로 장치
PCT/JP1998/005770 WO1999034445A1 (fr) 1997-12-26 1998-12-21 Circuit integre semi-conducteur
US09/582,485 US6483374B1 (en) 1997-12-26 1998-12-21 Semiconductor integrated circuit
CNB988126702A CN1195324C (zh) 1997-12-26 1998-12-21 半导体集成电路
EP98961441A EP1043774B1 (en) 1997-12-26 1998-12-21 Semiconductor integrated circuit
DE69824972T DE69824972T2 (de) 1997-12-26 1998-12-21 Integrierter halbleiterschaltkreis
US09/492,506 US6337593B1 (en) 1997-12-26 2000-01-27 Semiconductor integrated circuit
US10/247,525 US6600360B2 (en) 1997-12-26 2002-09-20 Semiconductor integrated circuit
US10/443,018 US6707334B2 (en) 1997-12-26 2003-05-22 Semiconductor integrated circuit
US10/765,923 US6987415B2 (en) 1997-12-26 2004-01-29 Semiconductor integrated circuit
US11/144,695 US7046075B2 (en) 1997-12-26 2005-06-06 Semiconductor integrated circuit
US11/396,543 US7321252B2 (en) 1997-11-21 2006-04-04 Semiconductor integrated circuit
US11/987,073 US7598796B2 (en) 1997-12-26 2007-11-27 Semiconductor integrated circuit including charging pump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35927197A JP4109340B2 (ja) 1997-12-26 1997-12-26 半導体集積回路装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004027489A Division JP4106033B2 (ja) 2004-02-04 2004-02-04 半導体集積回路装置
JP2008036089A Division JP4803756B2 (ja) 2008-02-18 2008-02-18 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JPH11191611A JPH11191611A (ja) 1999-07-13
JPH11191611A5 JPH11191611A5 (enExample) 2005-01-13
JP4109340B2 true JP4109340B2 (ja) 2008-07-02

Family

ID=18463648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35927197A Expired - Lifetime JP4109340B2 (ja) 1997-11-21 1997-12-26 半導体集積回路装置

Country Status (9)

Country Link
US (8) US6483374B1 (enExample)
EP (1) EP1043774B1 (enExample)
JP (1) JP4109340B2 (enExample)
KR (1) KR100625153B1 (enExample)
CN (1) CN1195324C (enExample)
DE (1) DE69824972T2 (enExample)
MY (1) MY118314A (enExample)
TW (1) TW426988B (enExample)
WO (1) WO1999034445A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8621281B2 (en) 2007-06-20 2013-12-31 Fujitsu Limited Information processing apparatus and control method

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4109340B2 (ja) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ 半導体集積回路装置
TW453032B (en) * 1998-09-09 2001-09-01 Hitachi Ltd Semiconductor integrated circuit apparatus
JP2009123235A (ja) * 2000-06-16 2009-06-04 Renesas Technology Corp 半導体集積回路装置
JPWO2002029893A1 (ja) * 2000-10-03 2004-02-19 株式会社ルネサステクノロジ 半導体装置
JP2002313937A (ja) * 2001-04-16 2002-10-25 Sony Corp 集積回路装置
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7180322B1 (en) 2002-04-16 2007-02-20 Transmeta Corporation Closed loop feedback control of integrated circuits
US6734472B2 (en) * 2002-04-25 2004-05-11 Synplicity, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
JP4401621B2 (ja) * 2002-05-07 2010-01-20 株式会社日立製作所 半導体集積回路装置
US6933744B2 (en) * 2002-06-11 2005-08-23 The Regents Of The University Of Michigan Low-leakage integrated circuits and dynamic logic circuits
US6864539B2 (en) * 2002-07-19 2005-03-08 Semiconductor Technology Academic Research Center Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitry
US7739624B2 (en) 2002-07-29 2010-06-15 Synopsys, Inc. Methods and apparatuses to generate a shielding mesh for integrated circuit devices
US7943436B2 (en) 2002-07-29 2011-05-17 Synopsys, Inc. Integrated circuit devices and methods and apparatuses for designing integrated circuit devices
JP2004152975A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
JP4708716B2 (ja) * 2003-02-27 2011-06-22 ルネサスエレクトロニクス株式会社 半導体集積回路装置、半導体集積回路装置の設計方法
JP4342833B2 (ja) 2003-05-16 2009-10-14 Ｎｅｃエレクトロニクス株式会社 容量セルと半導体装置及びその製造方法
US7219324B1 (en) * 2003-06-02 2007-05-15 Virage Logic Corporation Various methods and apparatuses to route multiple power rails to a cell
US7250807B1 (en) * 2003-06-05 2007-07-31 National Semiconductor Corporation Threshold scaling circuit that minimizes leakage current
US7170798B2 (en) * 2003-08-29 2007-01-30 Infineon Technologies Ag Controlled substrate voltage for memory switches
JP2005109179A (ja) * 2003-09-30 2005-04-21 National Institute Of Advanced Industrial & Technology 高速低消費電力論理装置
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7129771B1 (en) * 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7012461B1 (en) 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7026843B1 (en) * 2004-01-16 2006-04-11 Spansion Llc Flexible cascode amplifier circuit with high gain for flash memory cells
US7033883B2 (en) * 2004-06-04 2006-04-25 Faraday Technology Corp. Placement method for decoupling capacitors
JP4894014B2 (ja) * 2004-06-15 2012-03-07 エスティー‐エリクソン、ソシエテ、アノニム 集積回路のための電源の適応制御
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US7319357B2 (en) * 2004-08-24 2008-01-15 Texas Instruments Incorporated System for controlling switch transistor performance
JP2006173492A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体装置
JP2006217540A (ja) * 2005-02-07 2006-08-17 Fujitsu Ltd 半導体集積回路および半導体集積回路の制御方法
JP5096321B2 (ja) * 2005-05-13 2012-12-12 モーセッド・テクノロジーズ・インコーポレイテッド 論理セルのセル隣接により形成された信号バスを有する集積回路
JP2007027314A (ja) * 2005-07-14 2007-02-01 Nec Electronics Corp 半導体集積回路装置
JP2007148952A (ja) * 2005-11-30 2007-06-14 Renesas Technology Corp 半導体集積回路
US20070152745A1 (en) * 2005-12-30 2007-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for reducing leakage current of an integrated circuit
JP2007201236A (ja) * 2006-01-27 2007-08-09 Renesas Technology Corp 半導体集積回路
JP5092263B2 (ja) * 2006-03-31 2012-12-05 富士通セミコンダクター株式会社 デカップリングコンデンサ及び半導体集積回路装置
JP2008103569A (ja) * 2006-10-19 2008-05-01 Nec Electronics Corp 半導体装置
US7989849B2 (en) * 2006-11-15 2011-08-02 Synopsys, Inc. Apparatuses and methods for efficient power rail structures for cell libraries
US7532078B2 (en) * 2007-02-09 2009-05-12 International Business Machines Corporation Scannable virtual rail method and ring oscillator circuit for measuring variations in device characteristics
JP2008205271A (ja) * 2007-02-21 2008-09-04 Matsushita Electric Ind Co Ltd 半導体保護回路およびその製造方法、半導体保護回路の動作方法
JP5307427B2 (ja) * 2007-04-05 2013-10-02 ルネサスエレクトロニクス株式会社 半導体装置
JP5142686B2 (ja) * 2007-11-30 2013-02-13 ルネサスエレクトロニクス株式会社 半導体集積回路
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7880533B2 (en) * 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
US7683697B2 (en) * 2008-05-30 2010-03-23 Freescale Semiconductor, Inc. Circuitry and method for buffering a power mode control signal
US20110204148A1 (en) 2008-07-21 2011-08-25 Stuart Colin Littlechild Device having data storage
JP5486172B2 (ja) * 2008-08-07 2014-05-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7812662B2 (en) * 2008-10-07 2010-10-12 Via Technologies, Inc. System and method for adjusting supply voltage levels to reduce sub-threshold leakage
KR101211683B1 (ko) * 2008-12-31 2012-12-12 에스케이하이닉스 주식회사 반도체 집적회로
JP2010283269A (ja) * 2009-06-08 2010-12-16 Renesas Electronics Corp 半導体装置
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
US8385036B2 (en) * 2009-10-07 2013-02-26 Intersil Americas Inc. System and method for negative voltage protection
KR101046275B1 (ko) * 2010-03-29 2011-07-04 주식회사 하이닉스반도체 파워 메쉬 구조를 갖는 반도체 메모리 장치
JP5540910B2 (ja) * 2010-06-08 2014-07-02 富士通セミコンダクター株式会社 集積回路、集積回路設計装置及び集積回路設計方法
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP5614333B2 (ja) * 2011-03-01 2014-10-29 富士通セミコンダクター株式会社 半導体装置
CN102215007B (zh) * 2011-05-27 2013-11-20 唐险峰 功率控制电路板
JP5782919B2 (ja) * 2011-08-25 2015-09-24 サンケン電気株式会社 半導体装置
US8810283B2 (en) * 2012-05-22 2014-08-19 Analog Devices, Inc. CMOS transistor linearization method
KR102100708B1 (ko) * 2013-08-30 2020-04-16 에스케이하이닉스 주식회사 반도체 메모리 장치
KR102136228B1 (ko) * 2013-12-13 2020-07-21 에스케이하이닉스 주식회사 차동 시그널링을 지원하는 송/수신기 및 이를 포함하는 반도체 송/수신 시스템
US9557755B2 (en) * 2014-06-13 2017-01-31 Gn Resound A/S Interface circuit for a hearing aid and method
JP5866415B2 (ja) * 2014-06-30 2016-02-17 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9842182B2 (en) 2014-10-01 2017-12-12 Samsung Electronics Co., Ltd. Method and system for designing semiconductor device
JP2016092536A (ja) 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
KR20170044411A (ko) * 2015-10-15 2017-04-25 에스케이하이닉스 주식회사 반도체장치
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2018018037A1 (en) 2016-07-22 2018-01-25 Fluidic, Inc. Mist elimination system for electrochemical cells
CN109478643B (zh) 2016-07-22 2022-03-15 南特能源公司 电化学电池中的水分和二氧化碳管理系统
DE102016125404B4 (de) * 2016-12-15 2024-10-17 Taiwan Semiconductor Manufacturing Co. Ltd. Dual-rail-speicher, speichermakro und zugehöriges hybrides stromversorgungsverfahren
US10944396B2 (en) 2017-03-03 2021-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the semiconductor device
WO2018220470A1 (en) 2017-05-31 2018-12-06 Semiconductor Energy Laboratory Co., Ltd. Comparison circuit, semiconductor device, electronic component, and electronic device
WO2018233833A1 (en) 2017-06-22 2018-12-27 Abb Schweiz Ag A method for operating an electric-arc furnace, a power electronic converter, and an electric-arc furnace system
EP3815172A4 (en) 2018-06-29 2022-03-09 Form Energy, Inc. ROLLER DIAPHRAGM SEAL
EP3815173A4 (en) 2018-06-29 2022-03-16 Form Energy, Inc. ELECTROCHEMICAL METAL-AIR CELL ARCHITECTURE
JP7228389B2 (ja) 2019-01-23 2023-02-24 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
WO2020231718A1 (en) 2019-05-10 2020-11-19 Nantenergy, Inc. Nested annular metal-air cell and systems containing same
WO2020264344A1 (en) 2019-06-28 2020-12-30 Form Energy Inc. Device architectures for metal-air batteries
US11139017B2 (en) * 2019-11-12 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Self-activated bias generator
US12381244B2 (en) 2020-05-06 2025-08-05 Form Energy, Inc. Decoupled electrode electrochemical energy storage system
US11567551B2 (en) 2020-07-28 2023-01-31 Rohde & Schwarz Gmbh & Co. Kg Adaptive power supply
US12142211B2 (en) 2021-09-15 2024-11-12 Yunnan Invensight Optoelectronics Technology Co., Ltd. Display substrate, pixel circuit, driving method and display apparatus
CN115497521B (zh) * 2022-11-08 2023-02-17 长鑫存储技术有限公司 一种供电电路、存储器和电子设备
CN116027842B (zh) * 2023-03-24 2023-06-23 长鑫存储技术有限公司 功率控制电路、存储器及电子设备

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020550A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 半導体集積回路装置
US4628215A (en) * 1984-09-17 1986-12-09 Texas Instruments Incorporated Drive circuit for substrate pump
JPH0198254A (ja) * 1987-10-09 1989-04-17 Nec Corp Ｍｏｓ型半導体装置
JP2552534B2 (ja) * 1988-06-17 1996-11-13 三洋電機株式会社 基板バイアス電圧発生回路
JPH02154446A (ja) * 1988-12-06 1990-06-13 Matsushita Electron Corp 半導体装置の自動設計方法
JP2841917B2 (ja) * 1991-05-23 1998-12-24 松下電器産業株式会社 基板電位発生回路
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
JPH04345059A (ja) 1991-05-22 1992-12-01 Toshiba Corp 面実装型半導体部品
JPH05190670A (ja) 1992-01-16 1993-07-30 Toshiba Corp 半導体集積回路装置
JPH05190672A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 半導体装置及びそのレイアウト方式
JP3253389B2 (ja) * 1992-03-31 2002-02-04 株式会社東芝 半導体集積回路装置
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3503961B2 (ja) * 1992-06-02 2004-03-08 株式会社東芝 半導体装置
JPH076581A (ja) * 1992-11-10 1995-01-10 Texas Instr Inc <Ti> 基板バイアス・ポンプ装置
US5811990A (en) * 1993-10-15 1998-09-22 Micron Technology, Inc. Voltage pump and a level translator circuit
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JPH07254685A (ja) 1994-03-16 1995-10-03 Toshiba Corp 半導体記憶装置
JP2822881B2 (ja) * 1994-03-30 1998-11-11 日本電気株式会社 半導体集積回路装置
JP3645593B2 (ja) * 1994-09-09 2005-05-11 株式会社ルネサステクノロジ 半導体集積回路装置
JP3175521B2 (ja) 1995-01-27 2001-06-11 日本電気株式会社 シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路
JPH08249882A (ja) * 1995-03-15 1996-09-27 Nec Corp 半導体集積回路
US6259310B1 (en) * 1995-05-23 2001-07-10 Texas Instruments Incorporated Apparatus and method for a variable negative substrate bias generator
DE69530773D1 (de) * 1995-10-30 2003-06-18 St Microelectronics Srl Interface-Schaltung zum Steuern von elektronischen Schaltern mit Signalen erhöhter Spannung
EP0772282B1 (en) * 1995-10-31 2000-03-15 STMicroelectronics S.r.l. Negative charge pump circuit for electrically erasable semiconductor memory devices
KR970028938A (ko) * 1995-11-28 1997-06-26 김광호 외부 리셋 회로를 구비한 모뎀 장치
JPH09293789A (ja) * 1996-04-24 1997-11-11 Mitsubishi Electric Corp 半導体集積回路
KR100223770B1 (ko) * 1996-06-29 1999-10-15 김영환 반도체 장치의 문턱전압 제어회로
US5786724A (en) * 1996-12-17 1998-07-28 Texas Instruments Incorporated Control of body effect in MOS transistors by switching source-to-body bias
JP3732914B2 (ja) * 1997-02-28 2006-01-11 株式会社ルネサステクノロジ 半導体装置
KR100273208B1 (ko) * 1997-04-02 2000-12-15 김영환 반도체메모리장치의고효율전하펌프회로
JP3814385B2 (ja) * 1997-10-14 2006-08-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP4109340B2 (ja) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ 半導体集積回路装置
US6191615B1 (en) * 1998-03-30 2001-02-20 Nec Corporation Logic circuit having reduced power consumption
JP4390304B2 (ja) * 1998-05-26 2009-12-24 株式会社ルネサステクノロジ 半導体集積回路装置
TW453032B (en) * 1998-09-09 2001-09-01 Hitachi Ltd Semiconductor integrated circuit apparatus
US6198340B1 (en) * 1999-02-08 2001-03-06 Etron Technology, Inc. High efficiency CMOS pump circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8621281B2 (en) 2007-06-20 2013-12-31 Fujitsu Limited Information processing apparatus and control method

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EP1043774A4 (en) 2002-01-02
US20050218965A1 (en) 2005-10-06
US6337593B1 (en) 2002-01-08
DE69824972T2 (de) 2005-07-14
US7321252B2 (en) 2008-01-22
US20060176101A1 (en) 2006-08-10
US6987415B2 (en) 2006-01-17
CN1283308A (zh) 2001-02-07
US6707334B2 (en) 2004-03-16
EP1043774A1 (en) 2000-10-11
KR20010033614A (ko) 2001-04-25
US6600360B2 (en) 2003-07-29
US20080136502A1 (en) 2008-06-12
JPH11191611A (ja) 1999-07-13
TW426988B (en) 2001-03-21
CN1195324C (zh) 2005-03-30
MY118314A (en) 2004-09-30
US7046075B2 (en) 2006-05-16
EP1043774B1 (en) 2004-07-07
US20040183585A1 (en) 2004-09-23
US6483374B1 (en) 2002-11-19
KR100625153B1 (ko) 2006-09-20
US20030206049A1 (en) 2003-11-06
WO1999034445A1 (fr) 1999-07-08
US7598796B2 (en) 2009-10-06
DE69824972D1 (de) 2004-08-12

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