JPS56160060A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56160060A
JPS56160060A JP6306180A JP6306180A JPS56160060A JP S56160060 A JPS56160060 A JP S56160060A JP 6306180 A JP6306180 A JP 6306180A JP 6306180 A JP6306180 A JP 6306180A JP S56160060 A JPS56160060 A JP S56160060A
Authority
JP
Japan
Prior art keywords
mos transistor
type mos
bias
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6306180A
Other languages
Japanese (ja)
Other versions
JPH0142142B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6306180A priority Critical patent/JPS56160060A/en
Priority to US06/260,994 priority patent/US4460835A/en
Priority to DE8181103606T priority patent/DE3162416D1/en
Priority to EP81103606A priority patent/EP0039946B1/en
Priority to CA000377457A priority patent/CA1185665A/en
Publication of JPS56160060A publication Critical patent/JPS56160060A/en
Publication of JPH0142142B2 publication Critical patent/JPH0142142B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE: To constitute the circuit having small power consumption by a method wherein an E-type MOS transistor and an I-type MOS transistor are connected through the intermediary of the load resistor and a self-bias voltage is applied to these transistors.
CONSTITUTION: The E-type MOS transistor T4 and the I-type MOS transistor T5 are connected through the load resistor R1 as shown in the diagram. On the substrates of the transistors T4 and T5, a back bias VB is applied from terminals 3-4 and 3-5. The back bias VB is controlled in such manner that about -2.5V, CE' is maintained when a chip enable signal CE' is HIGH and about -6V when it is LOW. This function can be performed automatically using the self-bias generating device as shown in the diagram. Through these procedures, VB becomes approximately -6V when the CE' is LOW and the I-type MOS transistor T5 begins to perform the function of the E-type. As a result, the current passing this point is interrupted.
COPYRIGHT: (C)1981,JPO&Japio
JP6306180A 1980-05-13 1980-05-13 Semiconductor integrated circuit device Granted JPS56160060A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6306180A JPS56160060A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device
US06/260,994 US4460835A (en) 1980-05-13 1981-05-06 Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
DE8181103606T DE3162416D1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
EP81103606A EP0039946B1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
CA000377457A CA1185665A (en) 1980-05-13 1981-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6306180A JPS56160060A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56160060A true JPS56160060A (en) 1981-12-09
JPH0142142B2 JPH0142142B2 (en) 1989-09-11

Family

ID=13218442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6306180A Granted JPS56160060A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56160060A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768062A (en) * 1980-10-15 1982-04-26 Toshiba Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768062A (en) * 1980-10-15 1982-04-26 Toshiba Corp Semiconductor integrated circuit device
JPH0358182B2 (en) * 1980-10-15 1991-09-04 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPH0142142B2 (en) 1989-09-11

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