DE60028888D1 - Elektrolumineszente Anzeigevorrichtung und Herstellungsverfahren - Google Patents
Elektrolumineszente Anzeigevorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE60028888D1 DE60028888D1 DE60028888T DE60028888T DE60028888D1 DE 60028888 D1 DE60028888 D1 DE 60028888D1 DE 60028888 T DE60028888 T DE 60028888T DE 60028888 T DE60028888 T DE 60028888T DE 60028888 D1 DE60028888 D1 DE 60028888D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- display device
- electroluminescent display
- electroluminescent
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80523—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25096599 | 1999-09-03 | ||
JP25096599 | 1999-09-03 | ||
JP33624999A JP4472073B2 (ja) | 1999-09-03 | 1999-11-26 | 表示装置及びその作製方法 |
JP33624999 | 1999-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60028888D1 true DE60028888D1 (de) | 2006-08-03 |
DE60028888T2 DE60028888T2 (de) | 2006-12-07 |
Family
ID=26540005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60028888T Expired - Lifetime DE60028888T2 (de) | 1999-09-03 | 2000-09-01 | Elektrolumineszente Anzeigevorrichtung und Herstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (7) | US6433487B1 (de) |
EP (2) | EP1701396B1 (de) |
JP (1) | JP4472073B2 (de) |
KR (5) | KR100818533B1 (de) |
CN (2) | CN1203463C (de) |
DE (1) | DE60028888T2 (de) |
TW (1) | TW466781B (de) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US7141821B1 (en) * | 1998-11-10 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture |
US6277679B1 (en) | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
JP5210473B2 (ja) | 1999-06-21 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
EP1208603A1 (de) * | 1999-08-31 | 2002-05-29 | E Ink Corporation | Transistor für eine elektronische anzeigevorrichtung |
US6646287B1 (en) | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
JP2001210258A (ja) * | 2000-01-24 | 2001-08-03 | Toshiba Corp | 画像表示装置およびその製造方法 |
US6881501B2 (en) * | 2000-03-13 | 2005-04-19 | Seiko Epson Corporation | Organic electro-luminescence element and the manufacturing method thereof |
GB2361356B (en) * | 2000-04-14 | 2005-01-05 | Seiko Epson Corp | Light emitting device |
US6794229B2 (en) | 2000-04-28 | 2004-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
JP3628997B2 (ja) * | 2000-11-27 | 2005-03-16 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
KR100365519B1 (ko) * | 2000-12-14 | 2002-12-18 | 삼성에스디아이 주식회사 | 유기 전계발광 디바이스 및 이의 제조 방법 |
US7009203B2 (en) * | 2000-12-14 | 2006-03-07 | Samsung Soi Co., Ltd. | Organic EL device and method for manufacturing the same |
JP2002202737A (ja) * | 2000-12-28 | 2002-07-19 | Nec Corp | 発光素子の製造方法、発光素子 |
US6717359B2 (en) * | 2001-01-29 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6724150B2 (en) * | 2001-02-01 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP4292245B2 (ja) * | 2001-02-05 | 2009-07-08 | 三星モバイルディスプレイ株式會社 | 発光体、発光素子、及び発光表示装置 |
US6833313B2 (en) * | 2001-04-13 | 2004-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device by implanting rare gas ions |
JP2002329576A (ja) | 2001-04-27 | 2002-11-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
KR100437765B1 (ko) * | 2001-06-15 | 2004-06-26 | 엘지전자 주식회사 | 고온용 기판을 이용한 박막트랜지스터 제조방법과 이를 이용한 표시장치의 제조방법 |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
KR100404200B1 (ko) * | 2001-07-12 | 2003-11-03 | 엘지전자 주식회사 | 유기 el 디스플레이 패널 |
JP4887585B2 (ja) * | 2001-08-24 | 2012-02-29 | パナソニック株式会社 | 表示パネルおよびそれを用いた情報表示装置 |
JP2003068237A (ja) * | 2001-08-24 | 2003-03-07 | Toshiba Corp | 画像表示装置およびその製造方法 |
JP3691475B2 (ja) * | 2001-09-28 | 2005-09-07 | 株式会社半導体エネルギー研究所 | 発光装置 |
SG111968A1 (en) | 2001-09-28 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2003140561A (ja) * | 2001-10-30 | 2003-05-16 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
JP4019690B2 (ja) * | 2001-11-02 | 2007-12-12 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
US20030117067A1 (en) * | 2001-12-21 | 2003-06-26 | Daniel B. Roitman | OLED having improved light extraction efficiency |
KR100472502B1 (ko) * | 2001-12-26 | 2005-03-08 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
KR100782938B1 (ko) * | 2001-12-29 | 2007-12-07 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
WO2003069649A1 (fr) * | 2002-02-18 | 2003-08-21 | Kabushiki Kaisha Watanabe Shoko | Electrode, emetteur d'electrons et dispositif les utilisant |
KR100462861B1 (ko) * | 2002-04-15 | 2004-12-17 | 삼성에스디아이 주식회사 | 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법 |
US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
JP2003317971A (ja) * | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
US7164155B2 (en) | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP4216008B2 (ja) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末 |
AUPS327002A0 (en) * | 2002-06-28 | 2002-07-18 | Kabay & Company Pty Ltd | An electroluminescent light emitting device |
JP3861758B2 (ja) * | 2002-07-05 | 2006-12-20 | 株式会社豊田自動織機 | 照明装置及び表示装置 |
KR100710763B1 (ko) * | 2002-09-12 | 2007-04-24 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 유기 el 디스플레이 |
KR100846581B1 (ko) * | 2002-09-19 | 2008-07-16 | 삼성에스디아이 주식회사 | 듀얼형 유기전자발광소자와 그 제조방법 |
US6831407B2 (en) * | 2002-10-15 | 2004-12-14 | Eastman Kodak Company | Oled device having improved light output |
KR100683658B1 (ko) * | 2002-11-04 | 2007-02-15 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
WO2004053816A1 (ja) * | 2002-12-10 | 2004-06-24 | Semiconductor Energy Laboratory Co., Ltd. | 発光装置およびその作製方法 |
TW571449B (en) * | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
KR100908234B1 (ko) * | 2003-02-13 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 전계 발광 표시 장치 및 이의 제조방법 |
US7235920B2 (en) * | 2003-02-24 | 2007-06-26 | Osram Opto Semiconductors Gmbh | Display device and method of its manufacture |
JP3910926B2 (ja) * | 2003-02-26 | 2007-04-25 | 株式会社東芝 | 表示装置用透明基板の製造方法 |
JP4526776B2 (ja) * | 2003-04-02 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
KR100490322B1 (ko) * | 2003-04-07 | 2005-05-17 | 삼성전자주식회사 | 유기전계발광 표시장치 |
JP4702516B2 (ja) | 2003-05-07 | 2011-06-15 | エルジー エレクトロニクス インコーポレイティド | 有機el素子及びその製造方法 |
TWI260945B (en) * | 2003-05-16 | 2006-08-21 | Toyota Ind Corp | Light-emitting apparatus and method for forming the same |
JP3897173B2 (ja) * | 2003-05-23 | 2007-03-22 | セイコーエプソン株式会社 | 有機el表示装置及びその製造方法 |
US7557779B2 (en) | 2003-06-13 | 2009-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2005004096A1 (ja) * | 2003-07-08 | 2005-01-13 | Semiconductor Energy Laboratory Co., Ltd. | 表示装置およびその駆動方法 |
CN100469206C (zh) * | 2003-08-05 | 2009-03-11 | 松下电器产业株式会社 | 有机发光元件及其制造方法、显示装置及照明装置 |
TWI220240B (en) * | 2003-09-30 | 2004-08-11 | Au Optronics Corp | Full-color organic electroluminescent device (OLED) display and method of fabricating the same |
US20050088084A1 (en) * | 2003-10-27 | 2005-04-28 | Eastman Kodak Company | Organic polarized light emitting diode display with polarizer |
JP4165478B2 (ja) | 2003-11-07 | 2008-10-15 | セイコーエプソン株式会社 | 発光装置及び電子機器 |
US7023126B2 (en) * | 2003-12-03 | 2006-04-04 | Itt Manufacturing Enterprises Inc. | Surface structures for halo reduction in electron bombarded devices |
EP1716605B1 (de) * | 2004-02-09 | 2009-06-03 | Toyota Industries Corp. | Transflektive anzeige mit einer farbigen oled-rückbeleuchtung |
KR100570978B1 (ko) * | 2004-02-20 | 2006-04-13 | 삼성에스디아이 주식회사 | 표면이 개질된 유기막층을 사용하는 유기 전계 발광디스플레이 디바이스 및 이의 제조 방법 |
WO2005107327A1 (ja) * | 2004-04-30 | 2005-11-10 | Sanyo Electric Co., Ltd. | 発光ディスプレイ |
JP4521400B2 (ja) * | 2004-05-20 | 2010-08-11 | 京セラ株式会社 | 画像表示装置 |
JP5313438B2 (ja) * | 2004-05-20 | 2013-10-09 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置 |
KR100671640B1 (ko) * | 2004-06-24 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법 |
JPWO2006019032A1 (ja) * | 2004-08-17 | 2008-05-08 | 松下電器産業株式会社 | プラズマディスプレイパネルとその製造方法 |
EP1655785A1 (de) * | 2004-11-09 | 2006-05-10 | C.R.F. Società Consortile per Azioni | Licht emittierendes ambipolares Halbleiterbauelement |
US7582904B2 (en) | 2004-11-26 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and method for manufacturing thereof, and television device |
US7579775B2 (en) * | 2004-12-11 | 2009-08-25 | Samsung Mobile Display Co., Ltd. | Electroluminescence display device with improved external light coupling efficiency and method of manufacturing the same |
KR100683009B1 (ko) * | 2004-12-29 | 2007-02-15 | 엘지전자 주식회사 | 유기 전계 발광 소자 및 이를 제조하는 방법 |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7888702B2 (en) | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
KR100731745B1 (ko) * | 2005-06-22 | 2007-06-22 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR20070052388A (ko) * | 2005-11-17 | 2007-05-22 | 엘지전자 주식회사 | 난반사면을 갖는 금속전극층을 구비한 유기 전계 발광 소자 |
KR100773934B1 (ko) * | 2005-12-19 | 2007-11-06 | 주식회사 대우일렉트로닉스 | 오엘이디 디스플레이 패널 및 그 제조 방법 |
EP2013926A4 (de) * | 2006-04-26 | 2011-06-29 | Univ California | Organische leuchtdioden mit strukturierten elektroden |
KR100818270B1 (ko) * | 2006-06-23 | 2008-03-31 | 삼성전자주식회사 | 유기전계발광소자 및 그 제조방법 |
US20080012471A1 (en) * | 2006-06-29 | 2008-01-17 | Eastman Kodak Company | Oled device having improved light output |
US20080001538A1 (en) * | 2006-06-29 | 2008-01-03 | Cok Ronald S | Led device having improved light output |
US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
KR101480005B1 (ko) * | 2008-02-25 | 2015-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
TWI495108B (zh) * | 2008-07-31 | 2015-08-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
JP4912437B2 (ja) * | 2008-08-05 | 2012-04-11 | 三星モバイルディスプレイ株式會社 | 有機発光表示装置 |
KR100959107B1 (ko) * | 2008-08-28 | 2010-05-25 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR100959108B1 (ko) * | 2008-08-28 | 2010-05-25 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
TWI401992B (zh) * | 2008-12-01 | 2013-07-11 | Innolux Corp | 影像顯示裝置、影像顯示系統及其製造方法 |
KR100970482B1 (ko) * | 2008-12-04 | 2010-07-16 | 삼성전자주식회사 | 유기 발광소자 및 그 제조방법 |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
JP2011113736A (ja) * | 2009-11-25 | 2011-06-09 | Toshiba Mobile Display Co Ltd | 有機el装置及びその製造方法 |
KR101701978B1 (ko) * | 2010-06-03 | 2017-02-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조 방법 |
CN101950428A (zh) * | 2010-09-28 | 2011-01-19 | 中国科学院软件研究所 | 一种基于地形高程值的纹理合成方法 |
JP5827885B2 (ja) * | 2010-12-24 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 発光装置及び照明装置 |
US8735874B2 (en) * | 2011-02-14 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and method for manufacturing the same |
JP5827858B2 (ja) | 2011-09-29 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 発光装置 |
US9093665B2 (en) | 2011-10-19 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module and method for manufacturing the same |
TWI443846B (zh) * | 2011-11-01 | 2014-07-01 | Ind Tech Res Inst | 透明導電層結構 |
JP5758314B2 (ja) * | 2012-01-17 | 2015-08-05 | 株式会社東芝 | 有機電界発光素子、及び照明装置 |
KR101339440B1 (ko) * | 2012-01-26 | 2013-12-10 | 한국전자통신연구원 | 유기 발광 소자 및 유기 발광 소자 제조 방법 |
KR101335527B1 (ko) * | 2012-02-23 | 2013-12-02 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조 방법 |
JP5603897B2 (ja) * | 2012-03-23 | 2014-10-08 | 株式会社東芝 | 有機電界発光素子及び照明装置 |
KR101387918B1 (ko) * | 2012-04-30 | 2014-04-23 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조 방법 |
US9991463B2 (en) * | 2012-06-14 | 2018-06-05 | Universal Display Corporation | Electronic devices with improved shelf lives |
US10052168B2 (en) | 2012-06-19 | 2018-08-21 | Subramaniam Chitoor Krishnan | Methods and systems for preventing bleeding from the left atrial appendage |
US9427235B2 (en) | 2012-06-19 | 2016-08-30 | Subramaniam Chitoor Krishnan | Apparatus and method for treating bleeding arising from left atrial appendage |
EP2887905B1 (de) | 2012-08-22 | 2020-03-11 | Krishnan, Subramaniam, Chitoor | Systeme zum zugriff auf einen herzbeutel und verhinderung von schlaganfällen aus dem linken vorhofanhang |
JP6186377B2 (ja) * | 2012-12-18 | 2017-08-23 | パイオニア株式会社 | 発光装置 |
JP2014154213A (ja) * | 2013-02-04 | 2014-08-25 | Toshiba Corp | 有機電界発光素子、照明装置及び照明システム |
US9246133B2 (en) | 2013-04-12 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting panel, and light-emitting device |
TWI612689B (zh) | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
KR102099702B1 (ko) | 2013-05-16 | 2020-04-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조 방법 |
KR102080009B1 (ko) * | 2013-05-29 | 2020-04-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
JP2015034948A (ja) * | 2013-08-09 | 2015-02-19 | ソニー株式会社 | 表示装置および電子機器 |
JP2015072751A (ja) * | 2013-10-01 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
US9893216B1 (en) * | 2014-03-27 | 2018-02-13 | Steven Wade Shelton | Polarized light based solar cell |
JP6585384B2 (ja) | 2014-06-13 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN104627944B (zh) * | 2014-12-08 | 2016-08-17 | 无锡市天元电脑绗缝机有限公司 | 用于充枕机的压紧调节装置 |
KR102421582B1 (ko) * | 2015-02-24 | 2022-07-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN105679795B (zh) * | 2015-12-31 | 2018-11-09 | 上海天马有机发光显示技术有限公司 | 显示面板及显示装置 |
CN106653810B (zh) * | 2016-12-15 | 2020-09-04 | 武汉华星光电技术有限公司 | Oled显示面板以及oled显示装置 |
JP2017188478A (ja) * | 2017-06-19 | 2017-10-12 | 株式会社半導体エネルギー研究所 | 発光装置 |
US10297780B2 (en) * | 2017-10-18 | 2019-05-21 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting display panel, method for fabricating the same, and organic light-emitting display device |
JP6962221B2 (ja) * | 2018-02-01 | 2021-11-05 | 富士通株式会社 | 増幅装置及び電磁波照射装置 |
KR102582649B1 (ko) * | 2018-02-12 | 2023-09-25 | 삼성디스플레이 주식회사 | 표시 장치 |
JP2019149385A (ja) * | 2019-05-29 | 2019-09-05 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN110896096A (zh) | 2019-11-07 | 2020-03-20 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法 |
CN117270267A (zh) * | 2022-06-15 | 2023-12-22 | 瀚宇彩晶股份有限公司 | 显示面板及其制造方法 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE538469A (de) | 1954-05-27 | |||
US4103297A (en) | 1976-12-20 | 1978-07-25 | Hughes Aircraft Company | Light-insensitive matrix addressed liquid crystal display system |
JPS5743391A (en) * | 1980-08-26 | 1982-03-11 | Fujitsu Ltd | Method of producing el display element |
SE432306B (sv) | 1981-03-27 | 1984-03-26 | Torstensson Bengt Arne | Anordning for provtagning av grundvatten i jord och berg innefattande en atmintone delvis evakuerad mobil provtagningsbehallare |
EP0084581A1 (de) | 1982-01-25 | 1983-08-03 | AIRCONTROL SYSTEMS, Inc. | Armiertes Bauteil und Verfahren zu dessen Herstellung |
JPS6290260A (ja) | 1985-10-16 | 1987-04-24 | Tdk Corp | サ−マルヘツド用耐摩耗性保護膜 |
US5032883A (en) | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
JPH0442582A (ja) * | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
TW264575B (de) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
JP3792281B2 (ja) * | 1995-01-09 | 2006-07-05 | 株式会社半導体エネルギー研究所 | 太陽電池 |
JP3539821B2 (ja) | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH09148066A (ja) | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
JPH09213479A (ja) * | 1996-01-31 | 1997-08-15 | Sharp Corp | El素子及びその製造方法 |
GB2316228B (en) * | 1996-04-10 | 2000-12-06 | Cambridge Display Tech Ltd | High contrast electroluminescent displays |
JP3729952B2 (ja) | 1996-11-06 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 反射型表示装置の作製方法 |
JP3758768B2 (ja) | 1996-11-20 | 2006-03-22 | 株式会社半導体エネルギー研究所 | 液晶表示パネル |
JP3457819B2 (ja) | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
US6072450A (en) * | 1996-11-28 | 2000-06-06 | Casio Computer Co., Ltd. | Display apparatus |
JPH10172767A (ja) * | 1996-12-11 | 1998-06-26 | Sanyo Electric Co Ltd | エレクトロルミネッセンス素子及び表示装置 |
US5834893A (en) * | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
JP3463971B2 (ja) | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブel発光装置 |
JPH10319872A (ja) | 1997-01-17 | 1998-12-04 | Xerox Corp | アクティブマトリクス有機発光ダイオード表示装置 |
JP2845233B2 (ja) * | 1997-01-29 | 1999-01-13 | 双葉電子工業株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
KR100586715B1 (ko) | 1997-02-17 | 2006-06-08 | 세이코 엡슨 가부시키가이샤 | 유기 el 장치 |
US6462722B1 (en) | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3290375B2 (ja) * | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
JPH113048A (ja) | 1997-06-10 | 1999-01-06 | Canon Inc | エレクトロ・ルミネセンス素子及び装置、並びにその製造法 |
US6175345B1 (en) | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
US6215244B1 (en) * | 1997-06-16 | 2001-04-10 | Canon Kabushiki Kaisha | Stacked organic light emitting device with specific electrode arrangement |
JP3520396B2 (ja) | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
JP3295346B2 (ja) * | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
JP3439636B2 (ja) | 1997-09-01 | 2003-08-25 | 株式会社クボタ | 早期安定型埋立処分方法 |
KR100480552B1 (ko) | 1997-09-02 | 2005-05-16 | 삼성전자주식회사 | 실리콘막의결정화방법 |
JP3410667B2 (ja) * | 1997-11-25 | 2003-05-26 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
US7202497B2 (en) * | 1997-11-27 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TW556013B (en) * | 1998-01-30 | 2003-10-01 | Seiko Epson Corp | Electro-optical apparatus, method of producing the same and electronic apparatus |
JP3203227B2 (ja) * | 1998-02-27 | 2001-08-27 | 三洋電機株式会社 | 表示装置の製造方法 |
JP4458563B2 (ja) * | 1998-03-31 | 2010-04-28 | 三菱電機株式会社 | 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 |
JPH11307782A (ja) * | 1998-04-24 | 1999-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4223094B2 (ja) * | 1998-06-12 | 2009-02-12 | 株式会社半導体エネルギー研究所 | 電気光学表示装置 |
US6075317A (en) * | 1998-07-30 | 2000-06-13 | Alliedsignal Inc. | Electroluminescent device having increased brightness and resolution and method of fabrication |
US6518594B1 (en) * | 1998-11-16 | 2003-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices |
US6277679B1 (en) * | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
JP2000174282A (ja) | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4334045B2 (ja) | 1999-02-09 | 2009-09-16 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
KR100284337B1 (ko) * | 1999-02-11 | 2001-03-02 | 김순택 | 음극선관 |
US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
US6204081B1 (en) * | 1999-05-20 | 2001-03-20 | Lg Lcd, Inc. | Method for manufacturing a substrate of a liquid crystal display device |
US6278236B1 (en) * | 1999-09-02 | 2001-08-21 | Eastman Kodak Company | Organic electroluminescent devices with electron-injecting layer having aluminum and alkali halide |
US7253739B2 (en) * | 2005-03-10 | 2007-08-07 | Delphi Technologies, Inc. | System and method for determining eye closure state |
-
1999
- 1999-11-26 JP JP33624999A patent/JP4472073B2/ja not_active Expired - Fee Related
-
2000
- 2000-08-21 TW TW089116946A patent/TW466781B/zh not_active IP Right Cessation
- 2000-08-23 US US09/644,429 patent/US6433487B1/en not_active Expired - Lifetime
- 2000-09-01 EP EP06011935A patent/EP1701396B1/de not_active Expired - Lifetime
- 2000-09-01 EP EP00119026A patent/EP1081767B1/de not_active Expired - Lifetime
- 2000-09-01 CN CNB001268767A patent/CN1203463C/zh not_active Expired - Fee Related
- 2000-09-01 CN CNB021442665A patent/CN100501824C/zh not_active Expired - Fee Related
- 2000-09-01 DE DE60028888T patent/DE60028888T2/de not_active Expired - Lifetime
- 2000-09-04 KR KR1020000052096A patent/KR100818533B1/ko not_active IP Right Cessation
-
2002
- 2002-07-01 US US10/186,398 patent/US6555969B2/en not_active Expired - Lifetime
-
2003
- 2003-03-10 US US10/384,807 patent/US7012300B2/en not_active Expired - Fee Related
-
2004
- 2004-09-16 US US10/943,089 patent/US7427834B2/en not_active Expired - Fee Related
-
2007
- 2007-02-27 KR KR1020070019382A patent/KR100803935B1/ko not_active IP Right Cessation
- 2007-02-27 KR KR1020070019384A patent/KR100803936B1/ko not_active IP Right Cessation
- 2007-09-20 KR KR1020070095766A patent/KR100864197B1/ko not_active IP Right Cessation
-
2008
- 2008-08-13 KR KR1020080079463A patent/KR100882158B1/ko not_active IP Right Cessation
- 2008-09-11 US US12/208,528 patent/US7710028B2/en not_active Expired - Fee Related
-
2010
- 2010-04-12 US US12/758,566 patent/US8198806B2/en not_active Expired - Fee Related
-
2012
- 2012-06-07 US US13/490,694 patent/US8358063B2/en not_active Expired - Fee Related
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